JPS5434766A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5434766A
JPS5434766A JP10045377A JP10045377A JPS5434766A JP S5434766 A JPS5434766 A JP S5434766A JP 10045377 A JP10045377 A JP 10045377A JP 10045377 A JP10045377 A JP 10045377A JP S5434766 A JPS5434766 A JP S5434766A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
substrate
crack
photo
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10045377A
Other languages
Japanese (ja)
Inventor
Mitsuo Ito
Mitsugi Shimizu
Kenji Yoshinaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10045377A priority Critical patent/JPS5434766A/en
Publication of JPS5434766A publication Critical patent/JPS5434766A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To improve dielectric strength by filling a thin glass layer in a shallow groove formed centering on the edge of the PN junction exposed on a semiconductor substrate surface, and also to prevent the crack by improving the adhesion between the substrate and metal mask at the time of photo-mask formation by eliminating the generation of the curvature of the substrate.
COPYRIGHT: (C)1979,JPO&Japio
JP10045377A 1977-08-24 1977-08-24 Manufacture of semiconductor device Pending JPS5434766A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10045377A JPS5434766A (en) 1977-08-24 1977-08-24 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10045377A JPS5434766A (en) 1977-08-24 1977-08-24 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5434766A true JPS5434766A (en) 1979-03-14

Family

ID=14274323

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10045377A Pending JPS5434766A (en) 1977-08-24 1977-08-24 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5434766A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5973774A (en) * 1982-10-19 1984-04-26 Matsushita Electric Ind Co Ltd Apparatus for detecting residual voltage of battery

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5164377A (en) * 1974-11-06 1976-06-03 Hitachi Ltd HANDOTA ISOCHI

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5164377A (en) * 1974-11-06 1976-06-03 Hitachi Ltd HANDOTA ISOCHI

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5973774A (en) * 1982-10-19 1984-04-26 Matsushita Electric Ind Co Ltd Apparatus for detecting residual voltage of battery

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