JPS6447865A - Film forming method by bias sputtering - Google Patents
Film forming method by bias sputteringInfo
- Publication number
- JPS6447865A JPS6447865A JP20371487A JP20371487A JPS6447865A JP S6447865 A JPS6447865 A JP S6447865A JP 20371487 A JP20371487 A JP 20371487A JP 20371487 A JP20371487 A JP 20371487A JP S6447865 A JPS6447865 A JP S6447865A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- bias
- conductive film
- film
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
PURPOSE:To uniformly impress a bias voltage on a substrate and to form a highly adhesive film by forming an electrically conductive film on the surface of the insulating substrate on the bias electrode side,and using the substrate to carry out bias sputtering. CONSTITUTION:The insulating substrate 1 of glazed alumna, etc., is supported on the bias electrode 3 in a reaction chamber 20, a target 5 opposed to the substrate 1 is connected to a high-frequency power source 6, high-frequency sputtering is carried out in gaseous Ar, and a film is formed on the substrate 1. In this bias sputtering, an electrically conductive film 2' is previously formed on one surface of the substrate 1 on the bias electrode 3 side and a conductive film 2 of the same constitution is simultaneously formed on the other surface. The heating resistor element of boron-added silicon formed by the chemical transport method is appropriately used as the conductive films 2 and 2'. A bias voltage is efficiently and uniformly impressed on the substrate 1 through the conductive film 2' in contact 8 with the bias electrode 3. As a result, the temp. of the substrate 1 can be elevated, and a highly adhesive film can be formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62203714A JPH0660389B2 (en) | 1987-08-17 | 1987-08-17 | Deposition method by bias sputtering method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62203714A JPH0660389B2 (en) | 1987-08-17 | 1987-08-17 | Deposition method by bias sputtering method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6447865A true JPS6447865A (en) | 1989-02-22 |
JPH0660389B2 JPH0660389B2 (en) | 1994-08-10 |
Family
ID=16478629
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62203714A Expired - Fee Related JPH0660389B2 (en) | 1987-08-17 | 1987-08-17 | Deposition method by bias sputtering method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0660389B2 (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61278029A (en) * | 1985-05-31 | 1986-12-08 | Mitsubishi Electric Corp | Production of magnetic recording element |
-
1987
- 1987-08-17 JP JP62203714A patent/JPH0660389B2/en not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61278029A (en) * | 1985-05-31 | 1986-12-08 | Mitsubishi Electric Corp | Production of magnetic recording element |
Also Published As
Publication number | Publication date |
---|---|
JPH0660389B2 (en) | 1994-08-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |