JPS6447863A - Method for joining sputtering target - Google Patents
Method for joining sputtering targetInfo
- Publication number
- JPS6447863A JPS6447863A JP20157187A JP20157187A JPS6447863A JP S6447863 A JPS6447863 A JP S6447863A JP 20157187 A JP20157187 A JP 20157187A JP 20157187 A JP20157187 A JP 20157187A JP S6447863 A JPS6447863 A JP S6447863A
- Authority
- JP
- Japan
- Prior art keywords
- alloy powder
- sheet
- target
- temp
- binder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Abstract
PURPOSE:To surely, closely, and easily join a target in uniform thickness by interposing a sheet consisting of alloy powder and a binder between a target and a backing plate, and heating the material at a temp. higher than the softening temp. of the alloy. CONSTITUTION:The sheet 1 consisting of joining alloy powder and an org. binder is interposed between the sputtering target 2' and the backing plate 2, and fixed by the fixing adhesive materials 3 and 3 such as a pressure sensitive adhesive. The thickness of the sheet 1 is preferably controlled to about 1-300mum. The alloy powder, for example, contg., by weight, 5-15% P, 0-25% Cr, 0-5% B, 0-7% Si, 0-7% Fe, and the balance Ni is appropriately used. The alloy powder sheet is preferably composed of 100pts.wt. alloy powder and 0.1-10pts.wt. binder. The assembly is heated in a nonoxidizing atmosphere at a temp. higher than the softening temp. of the alloy powder, and sintered. By this method, the target 2' and the backing plate 2 are firmly joined.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20157187A JPS6447863A (en) | 1987-08-11 | 1987-08-11 | Method for joining sputtering target |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20157187A JPS6447863A (en) | 1987-08-11 | 1987-08-11 | Method for joining sputtering target |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6447863A true JPS6447863A (en) | 1989-02-22 |
Family
ID=16443267
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20157187A Pending JPS6447863A (en) | 1987-08-11 | 1987-08-11 | Method for joining sputtering target |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6447863A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6158174A (en) * | 1984-08-20 | 1986-03-25 | Mitsubishi Electric Corp | Fuel cell |
US6451185B2 (en) | 1998-08-12 | 2002-09-17 | Honeywell International Inc. | Diffusion bonded sputtering target assembly with precipitation hardened backing plate and method of making same |
US6555250B2 (en) * | 1997-03-19 | 2003-04-29 | Honeywell International Inc. | Ni-plated target diffusion bonded to a backing plate and method of making same |
CN110129755A (en) * | 2019-06-05 | 2019-08-16 | 深圳市华星光电技术有限公司 | Magnetic control spattering target and magnetic control sputtering device |
-
1987
- 1987-08-11 JP JP20157187A patent/JPS6447863A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6158174A (en) * | 1984-08-20 | 1986-03-25 | Mitsubishi Electric Corp | Fuel cell |
US6555250B2 (en) * | 1997-03-19 | 2003-04-29 | Honeywell International Inc. | Ni-plated target diffusion bonded to a backing plate and method of making same |
US6451185B2 (en) | 1998-08-12 | 2002-09-17 | Honeywell International Inc. | Diffusion bonded sputtering target assembly with precipitation hardened backing plate and method of making same |
CN110129755A (en) * | 2019-06-05 | 2019-08-16 | 深圳市华星光电技术有限公司 | Magnetic control spattering target and magnetic control sputtering device |
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