JPS6446937A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6446937A JPS6446937A JP20333887A JP20333887A JPS6446937A JP S6446937 A JPS6446937 A JP S6446937A JP 20333887 A JP20333887 A JP 20333887A JP 20333887 A JP20333887 A JP 20333887A JP S6446937 A JPS6446937 A JP S6446937A
- Authority
- JP
- Japan
- Prior art keywords
- film
- onto
- polysilicon film
- oxidation
- nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To prevent the generation of particles from a polysilicon film and the reduction of the thickness of the polysilicon film, and to ensure an EG effect sufficiently by forming a nitride film onto the polysilicon film shaped onto the rear of an silicon wafer prior to oxidation. CONSTITUTION:A first nitride film 13 is shaped onto a polysilicon film 12 for extrinsic gettering (EG) disposed onto the rear of an silicon wafer 11, and a film is formed onto the surface of the silicon wafer 11 through oxidation. A second nitride film 19 for selective oxidation is shaped, and first and second nitride films 13, 14 are removed. The polysilicon film 12 coated with the nitride film 13 is not oxidized even when the wafer 11 is exposed at a high temperature in a film formation process by oxidation, thus preventing the reduction of film thickness. Accordingly, the generation of particles from the polysilicon film 12 is also obviated, and an effective EG effect is acquired.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20333887A JPS6446937A (en) | 1987-08-15 | 1987-08-15 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20333887A JPS6446937A (en) | 1987-08-15 | 1987-08-15 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6446937A true JPS6446937A (en) | 1989-02-21 |
Family
ID=16472365
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20333887A Pending JPS6446937A (en) | 1987-08-15 | 1987-08-15 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6446937A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03235333A (en) * | 1990-02-13 | 1991-10-21 | Mitsubishi Electric Corp | Semiconductor substrate having improved getter effect, semiconductor device using the substrate and manufacture thereof |
| JPH06104268A (en) * | 1992-09-21 | 1994-04-15 | Mitsubishi Electric Corp | Semiconductor substrate having gettering effect and its manufacturing method |
| US5389551A (en) * | 1991-02-21 | 1995-02-14 | Kabushiki Kaisha Toshiba | Method of manufacturing a semiconductor substrate |
| US6229196B1 (en) | 1997-07-30 | 2001-05-08 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and fabrication method thereof |
| KR100324570B1 (en) * | 1999-08-13 | 2002-02-16 | 곽정소 | method for manufacturing semiconductor device |
| JP2009245968A (en) * | 2008-03-28 | 2009-10-22 | Oki Semiconductor Co Ltd | Manufacturing method of semiconductor device |
| JP2012129312A (en) * | 2010-12-14 | 2012-07-05 | Canon Inc | Semiconductor device manufacturing method |
-
1987
- 1987-08-15 JP JP20333887A patent/JPS6446937A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03235333A (en) * | 1990-02-13 | 1991-10-21 | Mitsubishi Electric Corp | Semiconductor substrate having improved getter effect, semiconductor device using the substrate and manufacture thereof |
| US5389551A (en) * | 1991-02-21 | 1995-02-14 | Kabushiki Kaisha Toshiba | Method of manufacturing a semiconductor substrate |
| JPH06104268A (en) * | 1992-09-21 | 1994-04-15 | Mitsubishi Electric Corp | Semiconductor substrate having gettering effect and its manufacturing method |
| US6229196B1 (en) | 1997-07-30 | 2001-05-08 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and fabrication method thereof |
| KR100324570B1 (en) * | 1999-08-13 | 2002-02-16 | 곽정소 | method for manufacturing semiconductor device |
| JP2009245968A (en) * | 2008-03-28 | 2009-10-22 | Oki Semiconductor Co Ltd | Manufacturing method of semiconductor device |
| JP2012129312A (en) * | 2010-12-14 | 2012-07-05 | Canon Inc | Semiconductor device manufacturing method |
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