JPS6444047A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS6444047A
JPS6444047A JP20129087A JP20129087A JPS6444047A JP S6444047 A JPS6444047 A JP S6444047A JP 20129087 A JP20129087 A JP 20129087A JP 20129087 A JP20129087 A JP 20129087A JP S6444047 A JPS6444047 A JP S6444047A
Authority
JP
Japan
Prior art keywords
film
contact
layer
wiring
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20129087A
Other languages
Japanese (ja)
Other versions
JPH0552067B2 (en
Inventor
Takeo Nakayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP20129087A priority Critical patent/JPS6444047A/en
Publication of JPS6444047A publication Critical patent/JPS6444047A/en
Publication of JPH0552067B2 publication Critical patent/JPH0552067B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To improve a signal delay of a wiring section having a contact part and an attenuation of a signal level, and to improve the operating speed of an inner circuit by decreasing the contact resistances of laminated wirings with a base conductive layer or a base wiring layer. CONSTITUTION:High melting point metal or polycrystalline silicon of Ti, TiSi, TiN, Mo, MoSi, W, WSi, etc., having high strength against a migration is employed as the material of a first layer wiring film 15. High melting point metal, Al-Si or Al-Si-Cu having sufficiently lower contact resistance of a contact part than that if the film 15 is contact with a base conductive layer 3 is employed as the material of a second layer wiring film 16. Then, a third layer wiring film 17 (Ti, TiSi, TiN, Mo, MoSi, W, or WSi, etc., having high strength against a migration is deposited approx. 8000Angstrom thick on the whole film 16 by a sputtering method. Thus, a signal delay of a wiring section having a contact structure and an attenuation of a signal level are improved, and the operating speed of an integrated circuit inner circuit is improved.
JP20129087A 1987-08-12 1987-08-12 Semiconductor integrated circuit Granted JPS6444047A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20129087A JPS6444047A (en) 1987-08-12 1987-08-12 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20129087A JPS6444047A (en) 1987-08-12 1987-08-12 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS6444047A true JPS6444047A (en) 1989-02-16
JPH0552067B2 JPH0552067B2 (en) 1993-08-04

Family

ID=16438527

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20129087A Granted JPS6444047A (en) 1987-08-12 1987-08-12 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS6444047A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5313100A (en) * 1991-04-26 1994-05-17 Mitsubishi Denki Kabushiki Kaisha Multilayer interconnection structure for a semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51121176A (en) * 1975-04-17 1976-10-22 Mitsumi Electric Co Ltd Super thin variable capacitor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51121176A (en) * 1975-04-17 1976-10-22 Mitsumi Electric Co Ltd Super thin variable capacitor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5313100A (en) * 1991-04-26 1994-05-17 Mitsubishi Denki Kabushiki Kaisha Multilayer interconnection structure for a semiconductor device
US5475267A (en) * 1991-04-26 1995-12-12 Mitsubishi Denki Kabushiki Kaisha Multilayer interconnection structure for a semiconductor device

Also Published As

Publication number Publication date
JPH0552067B2 (en) 1993-08-04

Similar Documents

Publication Publication Date Title
EP0276087A3 (en) Improved multilayer interconnection for integrated circuit structure having two or more conductive metal layers and method of making same
EP0269211A2 (en) Semiconductor device having a metallic layer
KR900002455A (en) Semiconductor integrated device manufacturing method
KR890007386A (en) Semiconductor device and manufacturing method thereof
EP0304728A3 (en) Process for manufacturing a low resistivity aluminium or aluminium alloy planar metalization
EP0128385A3 (en) Method of producing a semiconductor device having electrodes and wirings
KR960026410A (en) Integrated circuits and manufacturing methods thereof
KR920017184A (en) Manufacturing Method of Semiconductor Device
JPH06105764B2 (en) Built-in fuse semiconductor device
KR930003256A (en) How to Form a Metallized Wiring Layer in a Semiconductor Integrated Circuit
JPS57208161A (en) Semiconductor device
JPS5441087A (en) Semiconductor integrated circuit device
EP0255911A3 (en) Metal-dielectric-metal layer structure with low resistance via connections
JPS6444047A (en) Semiconductor integrated circuit
KR890005845A (en) Aluminum Alloy Semiconductor Device Having Barrier Layer and Manufacturing Method Thereof
JPS5721858A (en) Semiconductor device
EP0124960A3 (en) Semiconductor devices comprising silicides
JPS6459937A (en) Semiconductor device
JPS6420640A (en) Semiconductor device and manufacture thereof
JPS6445163A (en) Semiconductor device
KR910019176A (en) Metallization Systems With Reduced Corrosion Potential and Methods for Manufacturing Semiconductor Integrated Circuits
JPS6457664A (en) Contact connection structure
JPS6471176A (en) Semiconductor device
JPS6425553A (en) Semiconductor device
JPS54103680A (en) Multilayer wiring type semiconductor device

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees