JPS6444047A - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuitInfo
- Publication number
- JPS6444047A JPS6444047A JP20129087A JP20129087A JPS6444047A JP S6444047 A JPS6444047 A JP S6444047A JP 20129087 A JP20129087 A JP 20129087A JP 20129087 A JP20129087 A JP 20129087A JP S6444047 A JPS6444047 A JP S6444047A
- Authority
- JP
- Japan
- Prior art keywords
- film
- contact
- layer
- wiring
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To improve a signal delay of a wiring section having a contact part and an attenuation of a signal level, and to improve the operating speed of an inner circuit by decreasing the contact resistances of laminated wirings with a base conductive layer or a base wiring layer. CONSTITUTION:High melting point metal or polycrystalline silicon of Ti, TiSi, TiN, Mo, MoSi, W, WSi, etc., having high strength against a migration is employed as the material of a first layer wiring film 15. High melting point metal, Al-Si or Al-Si-Cu having sufficiently lower contact resistance of a contact part than that if the film 15 is contact with a base conductive layer 3 is employed as the material of a second layer wiring film 16. Then, a third layer wiring film 17 (Ti, TiSi, TiN, Mo, MoSi, W, or WSi, etc., having high strength against a migration is deposited approx. 8000Angstrom thick on the whole film 16 by a sputtering method. Thus, a signal delay of a wiring section having a contact structure and an attenuation of a signal level are improved, and the operating speed of an integrated circuit inner circuit is improved.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20129087A JPS6444047A (en) | 1987-08-12 | 1987-08-12 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20129087A JPS6444047A (en) | 1987-08-12 | 1987-08-12 | Semiconductor integrated circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6444047A true JPS6444047A (en) | 1989-02-16 |
JPH0552067B2 JPH0552067B2 (en) | 1993-08-04 |
Family
ID=16438527
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20129087A Granted JPS6444047A (en) | 1987-08-12 | 1987-08-12 | Semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6444047A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5313100A (en) * | 1991-04-26 | 1994-05-17 | Mitsubishi Denki Kabushiki Kaisha | Multilayer interconnection structure for a semiconductor device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51121176A (en) * | 1975-04-17 | 1976-10-22 | Mitsumi Electric Co Ltd | Super thin variable capacitor |
-
1987
- 1987-08-12 JP JP20129087A patent/JPS6444047A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51121176A (en) * | 1975-04-17 | 1976-10-22 | Mitsumi Electric Co Ltd | Super thin variable capacitor |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5313100A (en) * | 1991-04-26 | 1994-05-17 | Mitsubishi Denki Kabushiki Kaisha | Multilayer interconnection structure for a semiconductor device |
US5475267A (en) * | 1991-04-26 | 1995-12-12 | Mitsubishi Denki Kabushiki Kaisha | Multilayer interconnection structure for a semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPH0552067B2 (en) | 1993-08-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0276087A3 (en) | Improved multilayer interconnection for integrated circuit structure having two or more conductive metal layers and method of making same | |
EP0269211A2 (en) | Semiconductor device having a metallic layer | |
KR900002455A (en) | Semiconductor integrated device manufacturing method | |
KR890007386A (en) | Semiconductor device and manufacturing method thereof | |
EP0304728A3 (en) | Process for manufacturing a low resistivity aluminium or aluminium alloy planar metalization | |
EP0128385A3 (en) | Method of producing a semiconductor device having electrodes and wirings | |
KR960026410A (en) | Integrated circuits and manufacturing methods thereof | |
KR920017184A (en) | Manufacturing Method of Semiconductor Device | |
JPH06105764B2 (en) | Built-in fuse semiconductor device | |
KR930003256A (en) | How to Form a Metallized Wiring Layer in a Semiconductor Integrated Circuit | |
JPS57208161A (en) | Semiconductor device | |
JPS5441087A (en) | Semiconductor integrated circuit device | |
EP0255911A3 (en) | Metal-dielectric-metal layer structure with low resistance via connections | |
JPS6444047A (en) | Semiconductor integrated circuit | |
KR890005845A (en) | Aluminum Alloy Semiconductor Device Having Barrier Layer and Manufacturing Method Thereof | |
JPS5721858A (en) | Semiconductor device | |
EP0124960A3 (en) | Semiconductor devices comprising silicides | |
JPS6459937A (en) | Semiconductor device | |
JPS6420640A (en) | Semiconductor device and manufacture thereof | |
JPS6445163A (en) | Semiconductor device | |
KR910019176A (en) | Metallization Systems With Reduced Corrosion Potential and Methods for Manufacturing Semiconductor Integrated Circuits | |
JPS6457664A (en) | Contact connection structure | |
JPS6471176A (en) | Semiconductor device | |
JPS6425553A (en) | Semiconductor device | |
JPS54103680A (en) | Multilayer wiring type semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |