JPS5441087A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS5441087A
JPS5441087A JP10824177A JP10824177A JPS5441087A JP S5441087 A JPS5441087 A JP S5441087A JP 10824177 A JP10824177 A JP 10824177A JP 10824177 A JP10824177 A JP 10824177A JP S5441087 A JPS5441087 A JP S5441087A
Authority
JP
Japan
Prior art keywords
integrated circuit
circuit device
semiconductor integrated
metal
mosfets
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10824177A
Other languages
Japanese (ja)
Other versions
JPS6056293B2 (en
Inventor
Toru Tsujiide
Hideki Kitagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10824177A priority Critical patent/JPS6056293B2/en
Publication of JPS5441087A publication Critical patent/JPS5441087A/en
Publication of JPS6056293B2 publication Critical patent/JPS6056293B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To perform wiring free from disconnection at low resistance by inserting gate electrodes and wirings of multilayer construction between polycrystalline silicon layers, with either one or both of the metal or alloy of metal and silicon which withstands high temperature as an intermediate layer, in the integrated circuit device of MOSFETs.
JP10824177A 1977-09-07 1977-09-07 Method for manufacturing semiconductor integrated circuit device Expired JPS6056293B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10824177A JPS6056293B2 (en) 1977-09-07 1977-09-07 Method for manufacturing semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10824177A JPS6056293B2 (en) 1977-09-07 1977-09-07 Method for manufacturing semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS5441087A true JPS5441087A (en) 1979-03-31
JPS6056293B2 JPS6056293B2 (en) 1985-12-09

Family

ID=14479644

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10824177A Expired JPS6056293B2 (en) 1977-09-07 1977-09-07 Method for manufacturing semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS6056293B2 (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5271637A (en) * 1976-06-04 1977-06-15 Hitachi Maxell Method of producing button alkaline battery
JPS52150523A (en) * 1976-06-09 1977-12-14 Hitachi Maxell Method of producing button alkaline battery
JPS5326931A (en) * 1976-08-25 1978-03-13 Hitachi Maxell Method of producing button alkaline battery
JPS5459116U (en) * 1977-10-04 1979-04-24
JPS5457126A (en) * 1977-10-15 1979-05-08 Toshiba Ray O Vac Preparation of alkaline battery
JPS5830162A (en) * 1981-07-30 1983-02-22 インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン Method of forming electrode
JPS59195870A (en) * 1983-04-21 1984-11-07 Toshiba Corp Semiconductor device
JPS62277771A (en) * 1986-05-26 1987-12-02 Sony Corp Manufacture of semiconductor device
JPS6439064A (en) * 1987-08-04 1989-02-09 Mitsubishi Electric Corp Semiconductor device
JPH01120867A (en) * 1987-11-04 1989-05-12 Seiko Epson Corp Mis semiconductor device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6267288U (en) * 1985-10-16 1987-04-27
JPS6427685U (en) * 1987-08-08 1989-02-17
JPH0545997Y2 (en) * 1989-05-31 1993-11-30

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5271637A (en) * 1976-06-04 1977-06-15 Hitachi Maxell Method of producing button alkaline battery
JPS5718831B2 (en) * 1976-06-04 1982-04-19
JPS52150523A (en) * 1976-06-09 1977-12-14 Hitachi Maxell Method of producing button alkaline battery
JPS5326931A (en) * 1976-08-25 1978-03-13 Hitachi Maxell Method of producing button alkaline battery
JPS5459116U (en) * 1977-10-04 1979-04-24
JPS5457126A (en) * 1977-10-15 1979-05-08 Toshiba Ray O Vac Preparation of alkaline battery
JPS5830162A (en) * 1981-07-30 1983-02-22 インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン Method of forming electrode
JPH0234455B2 (en) * 1981-07-30 1990-08-03 Intaanashonaru Bijinesu Mashiinzu Corp
JPS59195870A (en) * 1983-04-21 1984-11-07 Toshiba Corp Semiconductor device
JPS62277771A (en) * 1986-05-26 1987-12-02 Sony Corp Manufacture of semiconductor device
JPS6439064A (en) * 1987-08-04 1989-02-09 Mitsubishi Electric Corp Semiconductor device
JPH01120867A (en) * 1987-11-04 1989-05-12 Seiko Epson Corp Mis semiconductor device

Also Published As

Publication number Publication date
JPS6056293B2 (en) 1985-12-09

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