JPS6442367A - Aluminum nitride sintered body - Google Patents

Aluminum nitride sintered body

Info

Publication number
JPS6442367A
JPS6442367A JP62196353A JP19635387A JPS6442367A JP S6442367 A JPS6442367 A JP S6442367A JP 62196353 A JP62196353 A JP 62196353A JP 19635387 A JP19635387 A JP 19635387A JP S6442367 A JPS6442367 A JP S6442367A
Authority
JP
Japan
Prior art keywords
materials
aluminum nitride
sintered body
incorporated
oxides
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62196353A
Other languages
Japanese (ja)
Inventor
Kazunari Watanabe
Keiichi Kawakami
Mitsuo Takahata
Masuo Sugizaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AGC Inc
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Priority to JP62196353A priority Critical patent/JPS6442367A/en
Publication of JPS6442367A publication Critical patent/JPS6442367A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To produce an AlN sintered body applicable to an insulating substrate having compact structure, high thermal conduction and superior heat dissipation at low cost by incorporating AlN powders with the oxides of Y and V, and mixing the incorporated materials, and molding the mixture, then calcining the molded body under non-oxidizing atmosphere. CONSTITUTION:The aluminum nitride powders are incorporated with the oxides of yttrium and vanadium as addition agents. The suitable amounts of these addition agents are both in the range of 0.01-12wt.%. The incorporated materials are then mixed, molded, and calcined in non-oxidizing atmosphere (e.g., nitrogen gas, in vacuum). The obtained aluminum nitride sintered body is of high thermal conduction having about >=200W/m<2>.k thermal conductivity, and is also superior in electrical and mechanical characteristics, and is capable of application to high temp. materials such as a crucible, vapor-deposition vessel, etc., besides the application to thermal dissipating materials in the fields of semiconductor industry.
JP62196353A 1987-08-07 1987-08-07 Aluminum nitride sintered body Pending JPS6442367A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62196353A JPS6442367A (en) 1987-08-07 1987-08-07 Aluminum nitride sintered body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62196353A JPS6442367A (en) 1987-08-07 1987-08-07 Aluminum nitride sintered body

Publications (1)

Publication Number Publication Date
JPS6442367A true JPS6442367A (en) 1989-02-14

Family

ID=16356429

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62196353A Pending JPS6442367A (en) 1987-08-07 1987-08-07 Aluminum nitride sintered body

Country Status (1)

Country Link
JP (1) JPS6442367A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5032554A (en) * 1988-12-16 1991-07-16 Ngk Spark Plug Co. Sintered silicon nitride products
JP2000327425A (en) * 1999-03-17 2000-11-28 Asahi Techno Glass Corp Aluminum nitride sintered compact and its production
JP2007019544A (en) * 2003-11-21 2007-01-25 Toshiba Corp Heat sink for semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62153173A (en) * 1985-06-28 1987-07-08 株式会社東芝 Aluminum nitride sintered body and manufacture
JPS63288966A (en) * 1987-05-21 1988-11-25 Denki Kagaku Kogyo Kk Member having resistance to erosion by molten copper

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62153173A (en) * 1985-06-28 1987-07-08 株式会社東芝 Aluminum nitride sintered body and manufacture
JPS63288966A (en) * 1987-05-21 1988-11-25 Denki Kagaku Kogyo Kk Member having resistance to erosion by molten copper

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5032554A (en) * 1988-12-16 1991-07-16 Ngk Spark Plug Co. Sintered silicon nitride products
JP2000327425A (en) * 1999-03-17 2000-11-28 Asahi Techno Glass Corp Aluminum nitride sintered compact and its production
JP2007019544A (en) * 2003-11-21 2007-01-25 Toshiba Corp Heat sink for semiconductor device
JP2007063122A (en) * 2003-11-21 2007-03-15 Toshiba Corp Substrate for semiconductor device
JP5060048B2 (en) * 2003-11-21 2012-10-31 株式会社東芝 High thermal conductivity aluminum nitride sintered body

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