JPS644021A - Reflection-type x-ray mask - Google Patents
Reflection-type x-ray maskInfo
- Publication number
- JPS644021A JPS644021A JP15906087A JP15906087A JPS644021A JP S644021 A JPS644021 A JP S644021A JP 15906087 A JP15906087 A JP 15906087A JP 15906087 A JP15906087 A JP 15906087A JP S644021 A JPS644021 A JP S644021A
- Authority
- JP
- Japan
- Prior art keywords
- substance
- composed mainly
- soft
- multilayered film
- rays
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
PURPOSE:To enhance the ease of handling and the accuracy of a pattern by a method wherein a multilayered film where a thin film composed mainly of a heavy element and another thin film composed mainly of a light element are formed alternately is used as a plane of reflection and a layer where one part of the multilayered film has been attached to a different substance or it has been treated is used as an absorption layer. CONSTITUTION:A multilayered film where a substance composed mainly of a heavy element and another substance composed mainly of a light element are laminated mutually is formed on a substrate; a patterned intermediate layer 9' which is composed of a substance absorbing soft X-rays is formed on the film. A gap d at a laminate of the multilayered film 8 between the substance composed mainly of the heavy element and the substance mainly composed of the light element is set in such a way that it can satisfy Bragg's condition for reflection in accordance with a wavelength lambdaand an incidence angle theta of incident soft X-rays. A thickness of the intermediate layer 9' is set in such a way that a contrast between the soft X-rays reflected by the multilayered film 8 and the soft X-rays transmitting the intermediate layer 9' can cause an attenuation amount which produces a sufficient contrast to form a pattern by means of reduction projection.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15906087A JP2614861B2 (en) | 1987-06-26 | 1987-06-26 | Reflective X-ray mask |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15906087A JP2614861B2 (en) | 1987-06-26 | 1987-06-26 | Reflective X-ray mask |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS644021A true JPS644021A (en) | 1989-01-09 |
JP2614861B2 JP2614861B2 (en) | 1997-05-28 |
Family
ID=15685343
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15906087A Expired - Lifetime JP2614861B2 (en) | 1987-06-26 | 1987-06-26 | Reflective X-ray mask |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2614861B2 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01175734A (en) * | 1987-12-29 | 1989-07-12 | Canon Inc | Reflective mask and its manufacture |
JPH0749419A (en) * | 1993-01-28 | 1995-02-21 | Gold Star Co Ltd | Preparation of hologram optical device |
JP2004510343A (en) * | 2000-09-26 | 2004-04-02 | ザ リージェンツ オブ ザ ユニヴァーシティ オブ カリフォルニア | Reduction of multilayer defects on reticle |
JP2015090421A (en) * | 2013-11-06 | 2015-05-11 | Hoya株式会社 | Thin film-provided substrate and method of producing mask for transfer |
JP2015529855A (en) * | 2012-08-30 | 2015-10-08 | ケーエルエー−テンカー コーポレイション | Measurement of wavefront aberration of optical system of EUV mask inspection system |
JP2016173392A (en) * | 2015-03-16 | 2016-09-29 | 株式会社東芝 | Light reflection type lithography mask, method of manufacturing the same, method of producing mask data, and mask blank |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61168917A (en) * | 1985-01-23 | 1986-07-30 | Hitachi Ltd | Exposing method and exposing apparatus |
JPS63201656A (en) * | 1987-02-18 | 1988-08-19 | Canon Inc | Multilayered film reflection type mask for soft x-ray and vacuum ultraviolet-ray exposure |
-
1987
- 1987-06-26 JP JP15906087A patent/JP2614861B2/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61168917A (en) * | 1985-01-23 | 1986-07-30 | Hitachi Ltd | Exposing method and exposing apparatus |
JPS63201656A (en) * | 1987-02-18 | 1988-08-19 | Canon Inc | Multilayered film reflection type mask for soft x-ray and vacuum ultraviolet-ray exposure |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01175734A (en) * | 1987-12-29 | 1989-07-12 | Canon Inc | Reflective mask and its manufacture |
JPH0749419A (en) * | 1993-01-28 | 1995-02-21 | Gold Star Co Ltd | Preparation of hologram optical device |
JP2004510343A (en) * | 2000-09-26 | 2004-04-02 | ザ リージェンツ オブ ザ ユニヴァーシティ オブ カリフォルニア | Reduction of multilayer defects on reticle |
JP4774188B2 (en) * | 2000-09-26 | 2011-09-14 | イーユーヴィー リミテッド ライアビリティー コーポレイション | Mitigating multilayer defects on reticles |
JP2015529855A (en) * | 2012-08-30 | 2015-10-08 | ケーエルエー−テンカー コーポレイション | Measurement of wavefront aberration of optical system of EUV mask inspection system |
JP2018028670A (en) * | 2012-08-30 | 2018-02-22 | ケーエルエー−テンカー コーポレイション | Wave front aberration metrology of optics of euv mask inspection system |
JP2015090421A (en) * | 2013-11-06 | 2015-05-11 | Hoya株式会社 | Thin film-provided substrate and method of producing mask for transfer |
JP2016173392A (en) * | 2015-03-16 | 2016-09-29 | 株式会社東芝 | Light reflection type lithography mask, method of manufacturing the same, method of producing mask data, and mask blank |
Also Published As
Publication number | Publication date |
---|---|
JP2614861B2 (en) | 1997-05-28 |
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