JPS6435926A - Reliability testing system for semiconductor element - Google Patents

Reliability testing system for semiconductor element

Info

Publication number
JPS6435926A
JPS6435926A JP19080887A JP19080887A JPS6435926A JP S6435926 A JPS6435926 A JP S6435926A JP 19080887 A JP19080887 A JP 19080887A JP 19080887 A JP19080887 A JP 19080887A JP S6435926 A JPS6435926 A JP S6435926A
Authority
JP
Japan
Prior art keywords
semiconductor elements
probes
semiconductor element
reliability test
testing system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19080887A
Other languages
Japanese (ja)
Other versions
JP2526252B2 (en
Inventor
Jun Murata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP62190808A priority Critical patent/JP2526252B2/en
Publication of JPS6435926A publication Critical patent/JPS6435926A/en
Application granted granted Critical
Publication of JP2526252B2 publication Critical patent/JP2526252B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To enable the reliability test of multiple semiconductor elements to be performed simultaneously by a method wherein the multiple semiconductor elements are impressed with specified stress signals through the intermediary of multiple probes. CONSTITUTION:A probe card 4 provided with multiple probes 4a corresponding to electrode pads of multiple semiconductor elements formed on a semiconductor wafer 3 is arranged on a mounting base 1a while the probes 4a are implanted corresponding to the electrode pads of multiple semiconductor elements formed on the semiconductor wafer 3. Then, the reliability test of these semiconductor elements is performed by impressing respective semiconductor elements with specified stress signals from a tester 2 through the intermediary of these probes 4a. Through these procedures, the reliability test of multiple semiconductor elements can be performed simultaneously.
JP62190808A 1987-07-30 1987-07-30 Reliability test method for semiconductor devices Expired - Lifetime JP2526252B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62190808A JP2526252B2 (en) 1987-07-30 1987-07-30 Reliability test method for semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62190808A JP2526252B2 (en) 1987-07-30 1987-07-30 Reliability test method for semiconductor devices

Publications (2)

Publication Number Publication Date
JPS6435926A true JPS6435926A (en) 1989-02-07
JP2526252B2 JP2526252B2 (en) 1996-08-21

Family

ID=16264090

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62190808A Expired - Lifetime JP2526252B2 (en) 1987-07-30 1987-07-30 Reliability test method for semiconductor devices

Country Status (1)

Country Link
JP (1) JP2526252B2 (en)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50120779A (en) * 1974-03-08 1975-09-22
JPS59134845A (en) * 1983-01-21 1984-08-02 Hitachi Ltd Probe card
JPS6059745A (en) * 1983-09-13 1985-04-06 Nec Corp Probe substrate for measuring semiconductor integrated circuit
JPS6113932A (en) * 1984-06-29 1986-01-22 松下電器産業株式会社 Power controller of cleaner
JPS6170734A (en) * 1984-09-13 1986-04-11 Fujitsu Ltd Probe card
JPS62149150A (en) * 1985-09-24 1987-07-03 Nec Corp Accelerated-life testing method of semiconductor device
JPS62293629A (en) * 1986-06-12 1987-12-21 Nec Corp Accelerated life test of semiconductor device

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50120779A (en) * 1974-03-08 1975-09-22
JPS59134845A (en) * 1983-01-21 1984-08-02 Hitachi Ltd Probe card
JPS6059745A (en) * 1983-09-13 1985-04-06 Nec Corp Probe substrate for measuring semiconductor integrated circuit
JPS6113932A (en) * 1984-06-29 1986-01-22 松下電器産業株式会社 Power controller of cleaner
JPS6170734A (en) * 1984-09-13 1986-04-11 Fujitsu Ltd Probe card
JPS62149150A (en) * 1985-09-24 1987-07-03 Nec Corp Accelerated-life testing method of semiconductor device
JPS62293629A (en) * 1986-06-12 1987-12-21 Nec Corp Accelerated life test of semiconductor device

Also Published As

Publication number Publication date
JP2526252B2 (en) 1996-08-21

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