JPS6433924A - Semiconductor wafer - Google Patents
Semiconductor waferInfo
- Publication number
- JPS6433924A JPS6433924A JP19112887A JP19112887A JPS6433924A JP S6433924 A JPS6433924 A JP S6433924A JP 19112887 A JP19112887 A JP 19112887A JP 19112887 A JP19112887 A JP 19112887A JP S6433924 A JPS6433924 A JP S6433924A
- Authority
- JP
- Japan
- Prior art keywords
- face
- semiconductor wafer
- ion implantation
- axis
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To prevent channeling phenomena in ion implantation, to eliminate nonuniformity in the amount of ion implantation, shadow effects in selective ion implantation and the like and to make it possible to manufacture an element having a minute structure, a super high performance IC and the like, by using a semiconductor wafer having the crystal surface, which is inclined by a specified angle in the specified direction from a 100 face. CONSTITUTION:A semiconductor wafer having a crystal surface 12, which is inclined by 5-15 deg. in the specified direction from a 100 face (a), is used. It is practical that the inclined direction of the crystal axis from the 100 face is the direction of the crystal axis of + or -15-35 deg. from a 110 axis (b) on the 100 face. For example, when a GaAs field effect transistor is formed, the semiconductor wafer 11 having the wafer surface 12, which is inclined by theta=5-15 deg. in the direction of the crystal axis (c) forming + or -15-35 deg. with the 110 axis from the 100 face on said face, is cut out of an ingot 13. In this way, the channel effect in ion implantation can be suppressed, and the profile of the implanted impurities can be controlled highly accurately. Since an ion beam is vertically inputted with respect to the wafer surface, the uniformity in the amount of the implantation in the surface is improved.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19112887A JPS6433924A (en) | 1987-07-29 | 1987-07-29 | Semiconductor wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19112887A JPS6433924A (en) | 1987-07-29 | 1987-07-29 | Semiconductor wafer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6433924A true JPS6433924A (en) | 1989-02-03 |
Family
ID=16269337
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19112887A Pending JPS6433924A (en) | 1987-07-29 | 1987-07-29 | Semiconductor wafer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6433924A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04343479A (en) * | 1991-05-21 | 1992-11-30 | Nec Yamagata Ltd | Variable capacitance diode |
JPH07172990A (en) * | 1993-12-20 | 1995-07-11 | Nec Corp | Semiconductor base and semiconductor device |
US5728611A (en) * | 1995-09-12 | 1998-03-17 | Mitsubishi Denki Kabushiki Kaisha | Method of fabricating semiconductor device |
US7541211B2 (en) | 2004-12-28 | 2009-06-02 | Canon Kabushiki Kaisha | Photoelectric conversion device, its manufacturing method, and image pickup device |
CN110691671A (en) * | 2017-04-20 | 2020-01-14 | 西尔特克特拉有限责任公司 | Method for wafer production with defined oriented modification lines |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54118167A (en) * | 1978-03-07 | 1979-09-13 | Fujitsu Ltd | Semiconductor device |
JPS60733A (en) * | 1983-06-17 | 1985-01-05 | Nec Corp | Semiconductor device and manufactur thereof |
JPS60161617A (en) * | 1984-02-02 | 1985-08-23 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPS61144017A (en) * | 1984-12-18 | 1986-07-01 | Fujitsu Ltd | Semiconductor wafer |
JPS61220424A (en) * | 1985-03-27 | 1986-09-30 | Toshiba Corp | Manufacture of semiconductor device |
-
1987
- 1987-07-29 JP JP19112887A patent/JPS6433924A/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54118167A (en) * | 1978-03-07 | 1979-09-13 | Fujitsu Ltd | Semiconductor device |
JPS60733A (en) * | 1983-06-17 | 1985-01-05 | Nec Corp | Semiconductor device and manufactur thereof |
JPS60161617A (en) * | 1984-02-02 | 1985-08-23 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPS61144017A (en) * | 1984-12-18 | 1986-07-01 | Fujitsu Ltd | Semiconductor wafer |
JPS61220424A (en) * | 1985-03-27 | 1986-09-30 | Toshiba Corp | Manufacture of semiconductor device |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04343479A (en) * | 1991-05-21 | 1992-11-30 | Nec Yamagata Ltd | Variable capacitance diode |
JPH07172990A (en) * | 1993-12-20 | 1995-07-11 | Nec Corp | Semiconductor base and semiconductor device |
US5728611A (en) * | 1995-09-12 | 1998-03-17 | Mitsubishi Denki Kabushiki Kaisha | Method of fabricating semiconductor device |
US7541211B2 (en) | 2004-12-28 | 2009-06-02 | Canon Kabushiki Kaisha | Photoelectric conversion device, its manufacturing method, and image pickup device |
US7977760B2 (en) | 2004-12-28 | 2011-07-12 | Canon Kabushiki Kaisha | Photoelectric conversion device, its manufacturing method, and image pickup device |
CN110691671A (en) * | 2017-04-20 | 2020-01-14 | 西尔特克特拉有限责任公司 | Method for wafer production with defined oriented modification lines |
JP2020520087A (en) * | 2017-04-20 | 2020-07-02 | ジルテクトラ ゲゼルシャフト ミット ベシュレンクテル ハフツング | Method for manufacturing a wafer having a modified line oriented as specified |
CN110691671B (en) * | 2017-04-20 | 2023-10-10 | 西尔特克特拉有限责任公司 | Method for producing wafers with defined oriented modification lines |
US11869810B2 (en) | 2017-04-20 | 2024-01-09 | Siltectra Gmbh | Method for reducing the thickness of solid-state layers provided with components |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS57126131A (en) | Manufacture of semiconductor device | |
GB1239044A (en) | ||
EP0195867B1 (en) | Method of manufacturing a semiconductor device including an implantation step | |
JPS5425171A (en) | Manufacture of field effect semiconductor device | |
JPS6433924A (en) | Semiconductor wafer | |
EP0137209A3 (en) | Silicon wafer and its application in producing integrated circuit devices | |
JPS5333074A (en) | Production of complementary type insulated gate field effect semiconductor device | |
JPS5727066A (en) | Manufacture of mis field-effect semiconductor device | |
JPS5449063A (en) | Semiconductor device and its manufacture | |
FR2430091A1 (en) | PROCESS FOR DEVELOPING AN INSULATING LAYER ABOVE A DOPED REGION SURROUNDING A SEMICONDUCTOR COMPONENT AND SEMICONDUCTOR DEVICE OBTAINED BY THIS PROCESS | |
KR950002183B1 (en) | Manufacturing method for semiconductor device | |
JPS60733A (en) | Semiconductor device and manufactur thereof | |
JPS57143823A (en) | Fabrication of semiconductor device | |
KR100268862B1 (en) | Fabricating method for semiconductor device | |
JPS57160171A (en) | Manufacture of semiconductor device | |
JPS6482561A (en) | Manufacture of bipolar type semiconductor device | |
JPS5662335A (en) | Production of semiconductor | |
JPS6481364A (en) | Manufacture of semiconductor device | |
JPS55145373A (en) | Fabricating method of semiconductor device | |
JPS57115821A (en) | Manufacture of semiconductor device | |
JPS6449222A (en) | Manufacture of iii-v compound semiconductor device | |
JPS59165467A (en) | Semiconductor device and manufacture thereof | |
GB2010009A (en) | A method of making a field effect logic semiconductor device and a field effect logic semiconductor device made thereby | |
GB1525936A (en) | Transistor and integrated circuit manufacture | |
JPS5879719A (en) | Method for doping impurity into semiconductor crystal |