JPS6433924A - Semiconductor wafer - Google Patents

Semiconductor wafer

Info

Publication number
JPS6433924A
JPS6433924A JP19112887A JP19112887A JPS6433924A JP S6433924 A JPS6433924 A JP S6433924A JP 19112887 A JP19112887 A JP 19112887A JP 19112887 A JP19112887 A JP 19112887A JP S6433924 A JPS6433924 A JP S6433924A
Authority
JP
Japan
Prior art keywords
face
semiconductor wafer
ion implantation
axis
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19112887A
Other languages
Japanese (ja)
Inventor
Jiro Kasahara
Toshiharu Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP19112887A priority Critical patent/JPS6433924A/en
Publication of JPS6433924A publication Critical patent/JPS6433924A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To prevent channeling phenomena in ion implantation, to eliminate nonuniformity in the amount of ion implantation, shadow effects in selective ion implantation and the like and to make it possible to manufacture an element having a minute structure, a super high performance IC and the like, by using a semiconductor wafer having the crystal surface, which is inclined by a specified angle in the specified direction from a 100 face. CONSTITUTION:A semiconductor wafer having a crystal surface 12, which is inclined by 5-15 deg. in the specified direction from a 100 face (a), is used. It is practical that the inclined direction of the crystal axis from the 100 face is the direction of the crystal axis of + or -15-35 deg. from a 110 axis (b) on the 100 face. For example, when a GaAs field effect transistor is formed, the semiconductor wafer 11 having the wafer surface 12, which is inclined by theta=5-15 deg. in the direction of the crystal axis (c) forming + or -15-35 deg. with the 110 axis from the 100 face on said face, is cut out of an ingot 13. In this way, the channel effect in ion implantation can be suppressed, and the profile of the implanted impurities can be controlled highly accurately. Since an ion beam is vertically inputted with respect to the wafer surface, the uniformity in the amount of the implantation in the surface is improved.
JP19112887A 1987-07-29 1987-07-29 Semiconductor wafer Pending JPS6433924A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19112887A JPS6433924A (en) 1987-07-29 1987-07-29 Semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19112887A JPS6433924A (en) 1987-07-29 1987-07-29 Semiconductor wafer

Publications (1)

Publication Number Publication Date
JPS6433924A true JPS6433924A (en) 1989-02-03

Family

ID=16269337

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19112887A Pending JPS6433924A (en) 1987-07-29 1987-07-29 Semiconductor wafer

Country Status (1)

Country Link
JP (1) JPS6433924A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04343479A (en) * 1991-05-21 1992-11-30 Nec Yamagata Ltd Variable capacitance diode
JPH07172990A (en) * 1993-12-20 1995-07-11 Nec Corp Semiconductor base and semiconductor device
US5728611A (en) * 1995-09-12 1998-03-17 Mitsubishi Denki Kabushiki Kaisha Method of fabricating semiconductor device
US7541211B2 (en) 2004-12-28 2009-06-02 Canon Kabushiki Kaisha Photoelectric conversion device, its manufacturing method, and image pickup device
CN110691671A (en) * 2017-04-20 2020-01-14 西尔特克特拉有限责任公司 Method for wafer production with defined oriented modification lines

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54118167A (en) * 1978-03-07 1979-09-13 Fujitsu Ltd Semiconductor device
JPS60733A (en) * 1983-06-17 1985-01-05 Nec Corp Semiconductor device and manufactur thereof
JPS60161617A (en) * 1984-02-02 1985-08-23 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS61144017A (en) * 1984-12-18 1986-07-01 Fujitsu Ltd Semiconductor wafer
JPS61220424A (en) * 1985-03-27 1986-09-30 Toshiba Corp Manufacture of semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54118167A (en) * 1978-03-07 1979-09-13 Fujitsu Ltd Semiconductor device
JPS60733A (en) * 1983-06-17 1985-01-05 Nec Corp Semiconductor device and manufactur thereof
JPS60161617A (en) * 1984-02-02 1985-08-23 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS61144017A (en) * 1984-12-18 1986-07-01 Fujitsu Ltd Semiconductor wafer
JPS61220424A (en) * 1985-03-27 1986-09-30 Toshiba Corp Manufacture of semiconductor device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04343479A (en) * 1991-05-21 1992-11-30 Nec Yamagata Ltd Variable capacitance diode
JPH07172990A (en) * 1993-12-20 1995-07-11 Nec Corp Semiconductor base and semiconductor device
US5728611A (en) * 1995-09-12 1998-03-17 Mitsubishi Denki Kabushiki Kaisha Method of fabricating semiconductor device
US7541211B2 (en) 2004-12-28 2009-06-02 Canon Kabushiki Kaisha Photoelectric conversion device, its manufacturing method, and image pickup device
US7977760B2 (en) 2004-12-28 2011-07-12 Canon Kabushiki Kaisha Photoelectric conversion device, its manufacturing method, and image pickup device
CN110691671A (en) * 2017-04-20 2020-01-14 西尔特克特拉有限责任公司 Method for wafer production with defined oriented modification lines
JP2020520087A (en) * 2017-04-20 2020-07-02 ジルテクトラ ゲゼルシャフト ミット ベシュレンクテル ハフツング Method for manufacturing a wafer having a modified line oriented as specified
CN110691671B (en) * 2017-04-20 2023-10-10 西尔特克特拉有限责任公司 Method for producing wafers with defined oriented modification lines
US11869810B2 (en) 2017-04-20 2024-01-09 Siltectra Gmbh Method for reducing the thickness of solid-state layers provided with components

Similar Documents

Publication Publication Date Title
JPS57126131A (en) Manufacture of semiconductor device
GB1239044A (en)
EP0195867B1 (en) Method of manufacturing a semiconductor device including an implantation step
JPS5425171A (en) Manufacture of field effect semiconductor device
JPS6433924A (en) Semiconductor wafer
EP0137209A3 (en) Silicon wafer and its application in producing integrated circuit devices
JPS5333074A (en) Production of complementary type insulated gate field effect semiconductor device
JPS5727066A (en) Manufacture of mis field-effect semiconductor device
JPS5449063A (en) Semiconductor device and its manufacture
FR2430091A1 (en) PROCESS FOR DEVELOPING AN INSULATING LAYER ABOVE A DOPED REGION SURROUNDING A SEMICONDUCTOR COMPONENT AND SEMICONDUCTOR DEVICE OBTAINED BY THIS PROCESS
KR950002183B1 (en) Manufacturing method for semiconductor device
JPS60733A (en) Semiconductor device and manufactur thereof
JPS57143823A (en) Fabrication of semiconductor device
KR100268862B1 (en) Fabricating method for semiconductor device
JPS57160171A (en) Manufacture of semiconductor device
JPS6482561A (en) Manufacture of bipolar type semiconductor device
JPS5662335A (en) Production of semiconductor
JPS6481364A (en) Manufacture of semiconductor device
JPS55145373A (en) Fabricating method of semiconductor device
JPS57115821A (en) Manufacture of semiconductor device
JPS6449222A (en) Manufacture of iii-v compound semiconductor device
JPS59165467A (en) Semiconductor device and manufacture thereof
GB2010009A (en) A method of making a field effect logic semiconductor device and a field effect logic semiconductor device made thereby
GB1525936A (en) Transistor and integrated circuit manufacture
JPS5879719A (en) Method for doping impurity into semiconductor crystal