JPS6431470A - Field effect transistor - Google Patents
Field effect transistorInfo
- Publication number
- JPS6431470A JPS6431470A JP18819287A JP18819287A JPS6431470A JP S6431470 A JPS6431470 A JP S6431470A JP 18819287 A JP18819287 A JP 18819287A JP 18819287 A JP18819287 A JP 18819287A JP S6431470 A JPS6431470 A JP S6431470A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- active layer
- type
- electron affinity
- impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18819287A JPS6431470A (en) | 1987-07-27 | 1987-07-27 | Field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18819287A JPS6431470A (en) | 1987-07-27 | 1987-07-27 | Field effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6431470A true JPS6431470A (en) | 1989-02-01 |
Family
ID=16219381
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18819287A Pending JPS6431470A (en) | 1987-07-27 | 1987-07-27 | Field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6431470A (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0539949A2 (en) * | 1991-10-29 | 1993-05-05 | Rohm Co., Ltd. | High electron mobility transistor having improved electron controllability |
US5254863A (en) * | 1990-10-19 | 1993-10-19 | U.S. Philips Corp. | Semiconductor device such as a high electron mobility transistor |
US5376812A (en) * | 1989-04-12 | 1994-12-27 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
US6350999B1 (en) * | 1999-02-05 | 2002-02-26 | Matsushita Electric Industrial Co., Ltd. | Electron-emitting device |
-
1987
- 1987-07-27 JP JP18819287A patent/JPS6431470A/ja active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5376812A (en) * | 1989-04-12 | 1994-12-27 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
US5254863A (en) * | 1990-10-19 | 1993-10-19 | U.S. Philips Corp. | Semiconductor device such as a high electron mobility transistor |
EP0539949A2 (en) * | 1991-10-29 | 1993-05-05 | Rohm Co., Ltd. | High electron mobility transistor having improved electron controllability |
EP0539949A3 (ja) * | 1991-10-29 | 1994-02-02 | Rohm Co Ltd | |
US5412230A (en) * | 1991-10-29 | 1995-05-02 | Rohm Co., Ltd. | High electron mobility transistor having improved electron controllability |
US6350999B1 (en) * | 1999-02-05 | 2002-02-26 | Matsushita Electric Industrial Co., Ltd. | Electron-emitting device |
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