JPS6431470A - Field effect transistor - Google Patents

Field effect transistor

Info

Publication number
JPS6431470A
JPS6431470A JP18819287A JP18819287A JPS6431470A JP S6431470 A JPS6431470 A JP S6431470A JP 18819287 A JP18819287 A JP 18819287A JP 18819287 A JP18819287 A JP 18819287A JP S6431470 A JPS6431470 A JP S6431470A
Authority
JP
Japan
Prior art keywords
layer
active layer
type
electron affinity
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18819287A
Other languages
English (en)
Inventor
Kazuyoshi Ueno
Tomohiro Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP18819287A priority Critical patent/JPS6431470A/ja
Publication of JPS6431470A publication Critical patent/JPS6431470A/ja
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP18819287A 1987-07-27 1987-07-27 Field effect transistor Pending JPS6431470A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18819287A JPS6431470A (en) 1987-07-27 1987-07-27 Field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18819287A JPS6431470A (en) 1987-07-27 1987-07-27 Field effect transistor

Publications (1)

Publication Number Publication Date
JPS6431470A true JPS6431470A (en) 1989-02-01

Family

ID=16219381

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18819287A Pending JPS6431470A (en) 1987-07-27 1987-07-27 Field effect transistor

Country Status (1)

Country Link
JP (1) JPS6431470A (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0539949A2 (en) * 1991-10-29 1993-05-05 Rohm Co., Ltd. High electron mobility transistor having improved electron controllability
US5254863A (en) * 1990-10-19 1993-10-19 U.S. Philips Corp. Semiconductor device such as a high electron mobility transistor
US5376812A (en) * 1989-04-12 1994-12-27 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
US6350999B1 (en) * 1999-02-05 2002-02-26 Matsushita Electric Industrial Co., Ltd. Electron-emitting device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5376812A (en) * 1989-04-12 1994-12-27 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
US5254863A (en) * 1990-10-19 1993-10-19 U.S. Philips Corp. Semiconductor device such as a high electron mobility transistor
EP0539949A2 (en) * 1991-10-29 1993-05-05 Rohm Co., Ltd. High electron mobility transistor having improved electron controllability
EP0539949A3 (ja) * 1991-10-29 1994-02-02 Rohm Co Ltd
US5412230A (en) * 1991-10-29 1995-05-02 Rohm Co., Ltd. High electron mobility transistor having improved electron controllability
US6350999B1 (en) * 1999-02-05 2002-02-26 Matsushita Electric Industrial Co., Ltd. Electron-emitting device

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