JPS6431470A - Field effect transistor - Google Patents
Field effect transistorInfo
- Publication number
- JPS6431470A JPS6431470A JP18819287A JP18819287A JPS6431470A JP S6431470 A JPS6431470 A JP S6431470A JP 18819287 A JP18819287 A JP 18819287A JP 18819287 A JP18819287 A JP 18819287A JP S6431470 A JPS6431470 A JP S6431470A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- active layer
- type
- electron affinity
- impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To provide a FET having a high Schottky barrier, a wide dynamic range and high performance by sequentially reducing the electron affinity of an N-type impurity layer of an active layer from below to above, and sequentially increasing the sum of the electron affinity and the forbidden band width of a P-type impurity layer of an active layer from below to above. CONSTITUTION:A buffer layer 2a made of a nondoped GaAs layer, an N-type high concentration active layer 3a and an impurity layer 4a made of a graded AlxGa1-xAs layer (X: 0 0.3) are sequentially formed on a semi-insulating substrate 1a made of GaAs in a Schottky barrier type field effect transistor using compound semiconductor. A gate 7a made of refractory metal of a predetermined pattern is formed on the layer 4a, low resistance layers 5a, 6a formed from the layer 4a to the layer 3a are formed, and source and drain electrodes 8a, 9a are respectively formed on the layers 5a and 6a. A low impurity concentration impurity layer which is gradually increased in the electron affinity and the forbidden band width from above to below of the P-type active layer is formed on the active layer, and a P-channel MESFET is performed similarly to an n-channel MESFET.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18819287A JPS6431470A (en) | 1987-07-27 | 1987-07-27 | Field effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18819287A JPS6431470A (en) | 1987-07-27 | 1987-07-27 | Field effect transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6431470A true JPS6431470A (en) | 1989-02-01 |
Family
ID=16219381
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18819287A Pending JPS6431470A (en) | 1987-07-27 | 1987-07-27 | Field effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6431470A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0539949A2 (en) * | 1991-10-29 | 1993-05-05 | Rohm Co., Ltd. | High electron mobility transistor having improved electron controllability |
| US5254863A (en) * | 1990-10-19 | 1993-10-19 | U.S. Philips Corp. | Semiconductor device such as a high electron mobility transistor |
| US5376812A (en) * | 1989-04-12 | 1994-12-27 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
| US6350999B1 (en) * | 1999-02-05 | 2002-02-26 | Matsushita Electric Industrial Co., Ltd. | Electron-emitting device |
-
1987
- 1987-07-27 JP JP18819287A patent/JPS6431470A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5376812A (en) * | 1989-04-12 | 1994-12-27 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
| US5254863A (en) * | 1990-10-19 | 1993-10-19 | U.S. Philips Corp. | Semiconductor device such as a high electron mobility transistor |
| EP0539949A2 (en) * | 1991-10-29 | 1993-05-05 | Rohm Co., Ltd. | High electron mobility transistor having improved electron controllability |
| EP0539949A3 (en) * | 1991-10-29 | 1994-02-02 | Rohm Co Ltd | |
| US5412230A (en) * | 1991-10-29 | 1995-05-02 | Rohm Co., Ltd. | High electron mobility transistor having improved electron controllability |
| US6350999B1 (en) * | 1999-02-05 | 2002-02-26 | Matsushita Electric Industrial Co., Ltd. | Electron-emitting device |
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