JPS6430258A - Semiconductor storage device - Google Patents
Semiconductor storage deviceInfo
- Publication number
- JPS6430258A JPS6430258A JP62186840A JP18684087A JPS6430258A JP S6430258 A JPS6430258 A JP S6430258A JP 62186840 A JP62186840 A JP 62186840A JP 18684087 A JP18684087 A JP 18684087A JP S6430258 A JPS6430258 A JP S6430258A
- Authority
- JP
- Japan
- Prior art keywords
- bit
- capacitor
- wire
- mosfets
- wires
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Memories (AREA)
- Dram (AREA)
Abstract
PURPOSE:To simplify a memory cell structure and an enviromental circuit as well by a method wherein two bit wires, a bit wire and an inverting bit wire, are provided, a capacitor is provided between the bit wires through intermediary of two MOSFETs as transfer gates, and two MOSFETs are made to consist of a three-layered structure. CONSTITUTION:A bit wire BL is connected with a source of a MOSFET (TR1a) and an inverting bit wire -BL is connected with a source of a TR1b. When a word wire WL is selected to be at a high level, the MOSFETs, (TR1a) and (TR1b) are made to be conductive, and write-in and read-out of the information from an information charge storing capacitor C1 are executed. Here, when alpharays hit the capacitor C1, the potential decreases as electrons are injected into an n+ diffusion layer 4, but a first polycrystalline Si layer 6 is made to decrease in potential owing to the capacitor coupling, which effect is read out between the bit wires BL and -BL, and thus the sensed information is not inverted.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62186840A JPS6430258A (en) | 1987-07-27 | 1987-07-27 | Semiconductor storage device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62186840A JPS6430258A (en) | 1987-07-27 | 1987-07-27 | Semiconductor storage device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6430258A true JPS6430258A (en) | 1989-02-01 |
Family
ID=16195551
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62186840A Pending JPS6430258A (en) | 1987-07-27 | 1987-07-27 | Semiconductor storage device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6430258A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100328743B1 (en) * | 1995-11-28 | 2002-10-31 | 삼성전자 주식회사 | Ferroelectric dynamic random access memory |
-
1987
- 1987-07-27 JP JP62186840A patent/JPS6430258A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100328743B1 (en) * | 1995-11-28 | 2002-10-31 | 삼성전자 주식회사 | Ferroelectric dynamic random access memory |
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