JPS5771587A - Semiconductor storing device - Google Patents

Semiconductor storing device

Info

Publication number
JPS5771587A
JPS5771587A JP14792180A JP14792180A JPS5771587A JP S5771587 A JPS5771587 A JP S5771587A JP 14792180 A JP14792180 A JP 14792180A JP 14792180 A JP14792180 A JP 14792180A JP S5771587 A JPS5771587 A JP S5771587A
Authority
JP
Japan
Prior art keywords
signal
cell
line wire
case
selective line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14792180A
Other languages
Japanese (ja)
Other versions
JPH0143400B2 (en
Inventor
Hiroshi Iwahashi
Masamichi Asano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14792180A priority Critical patent/JPS5771587A/en
Publication of JPS5771587A publication Critical patent/JPS5771587A/en
Publication of JPH0143400B2 publication Critical patent/JPH0143400B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store

Landscapes

  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)

Abstract

PURPOSE:To reduce an occupied area of a memory cell, by constituting it so as to connect plural double type MOSFETs in series. CONSTITUTION:A memory cell 16 consists of double gate type MOSFETs, and plural series circuits 17 are formed by connecting in series the same number of MOSFETs respectively. In case when a data is read out from this storing device, R/W and a signal A are set to ''1'' and ''0'', respectively, and while a clock signal phi is set to ''1'', a ''0'' signal and a ''1'' signal are supplied to a selective line wire and a non-selective line wire, respectively, from a line decoder 14, and a signal of a connecting point S in that case is detected. Subsequently, in case when a data is written to the cell 16, the signal R/W is set to ''0'', and while the signal phi is set to ''1'', high potential voltage V1 and voltage of lower potential the V1 are supplied to the selective line wire and the non-selective line wire, respectively, and the signal A is set to ''1'' in accordance with a write data. According to such a constitution, it is unnecessary to apply ground potential to the source of each cell 16, and also a contact hole for for connecting each drain and a row wire 13 is not required, therefore, an occupied area of the cell is reduced.
JP14792180A 1980-10-22 1980-10-22 Semiconductor storing device Granted JPS5771587A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14792180A JPS5771587A (en) 1980-10-22 1980-10-22 Semiconductor storing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14792180A JPS5771587A (en) 1980-10-22 1980-10-22 Semiconductor storing device

Publications (2)

Publication Number Publication Date
JPS5771587A true JPS5771587A (en) 1982-05-04
JPH0143400B2 JPH0143400B2 (en) 1989-09-20

Family

ID=15441098

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14792180A Granted JPS5771587A (en) 1980-10-22 1980-10-22 Semiconductor storing device

Country Status (1)

Country Link
JP (1) JPS5771587A (en)

Cited By (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61120474A (en) * 1984-11-07 1986-06-07 エツセジーエツセ　ミクロエレツトロニカ　ソチエタ　ペル　アノニマ Eprom memory matrix and writng thereinto
JPS61186019A (en) * 1985-02-13 1986-08-19 Toshiba Corp Logic circuit
JPS63184367A (en) * 1987-01-26 1988-07-29 Nec Corp Mos nonvolatile semiconductor storage device
JPS63266884A (en) * 1987-04-24 1988-11-02 Toshiba Corp Nonvolatile semiconductor memory
JPS63268192A (en) * 1987-04-24 1988-11-04 Toshiba Corp Nonvolatile semiconductor memory
JPS63268193A (en) * 1987-04-24 1988-11-04 Toshiba Corp Nonvolatile semiconductor memory
JPS645072A (en) * 1987-06-29 1989-01-10 Toshiba Corp Nonvolatile semiconductor memory device
JPH01133290A (en) * 1987-11-18 1989-05-25 Toshiba Corp Non-volatile semiconductor memory device
JPH027295A (en) * 1988-06-27 1990-01-11 Toshiba Corp Non-volatile semiconductor memory
JPH0294198A (en) * 1988-09-30 1990-04-04 Toshiba Corp Nonvolatile semiconductor memory device
US4939690A (en) * 1987-12-28 1990-07-03 Kabushiki Kaisha Toshiba Electrically erasable programmable read-only memory with NAND cell structure that suppresses memory cell threshold voltage variation
US4962481A (en) * 1988-12-27 1990-10-09 Samsung Electronics Co., Ltd. EEPROM device with plurality of memory strings made of floating gate transistors connected in series
JPH02260455A (en) * 1988-12-15 1990-10-23 Samsung Electron Co Ltd Electrically exasable and programmable semiconductor memory device and its eraoing method and its erasing programming method
US5008856A (en) * 1987-06-29 1991-04-16 Kabushiki Kaisha Toshiba Electrically programmable nonvolatile semiconductor memory device with NAND cell structure
US5050125A (en) * 1987-11-18 1991-09-17 Kabushiki Kaisha Toshiba Electrically erasable programmable read-only memory with NAND cellstructure
US5245566A (en) * 1987-04-24 1993-09-14 Fujio Masuoka Programmable semiconductor
US5270969A (en) * 1987-06-29 1993-12-14 Kabushiki Kaisha Toshiba Electrically programmable nonvolatile semiconductor memory device with nand cell structure
US5295096A (en) * 1988-07-11 1994-03-15 Mitsubishi Denki Kabushiki Kaisha NAND type EEPROM and operating method therefor
US5313420A (en) * 1987-04-24 1994-05-17 Kabushiki Kaisha Toshiba Programmable semiconductor memory
JPH06196717A (en) * 1993-10-12 1994-07-15 Toshiba Corp Nonvolatile semiconductor memory device
JPH06196718A (en) * 1993-10-12 1994-07-15 Toshiba Corp Nonvolatile semiconductor memory device
US5440509A (en) * 1987-11-18 1995-08-08 Kabushiki Kaisha Toshiba Electrically erasable programmable read-only memory with NAND cell structure and intermediate level voltages initially applied to bit lines
US5448517A (en) * 1987-06-29 1995-09-05 Kabushiki Kaisha Toshiba Electrically programmable nonvolatile semiconductor memory device with NAND cell structure
JPH07302855A (en) * 1995-06-05 1995-11-14 Toshiba Corp Non-volatile semiconductor storage device
US5589699A (en) * 1993-12-27 1996-12-31 Kabushiki Kaisha Toshiba Electrically erasable programmable non-volatile semiconductor memory device having select gates and small number of contact holes
JPH09120689A (en) * 1996-10-21 1997-05-06 Toshiba Corp Nonvolatile semiconductor memory
US5719805A (en) * 1987-04-24 1998-02-17 Kabushiki Kaisha Toshiba Electrically programmable non-volatile semiconductor memory including series connected memory cells and decoder circuitry for applying a ground voltage to non-selected circuit units
US5877981A (en) * 1987-06-29 1999-03-02 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device having a matrix of memory cells
US6034899A (en) * 1987-06-29 2000-03-07 Kabushiki Kaisha Toshiba Memory cell of nonvolatile semiconductor memory device
US6545913B2 (en) 1987-06-29 2003-04-08 Kabushiki Kaisha Toshiba Memory cell of nonvolatile semiconductor memory device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6091639A (en) 1993-08-27 2000-07-18 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and data programming method

Cited By (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61120474A (en) * 1984-11-07 1986-06-07 エツセジーエツセ　ミクロエレツトロニカ　ソチエタ　ペル　アノニマ Eprom memory matrix and writng thereinto
JPH0519798B2 (en) * 1985-02-13 1993-03-17 Tokyo Shibaura Electric Co
JPS61186019A (en) * 1985-02-13 1986-08-19 Toshiba Corp Logic circuit
JPS63184367A (en) * 1987-01-26 1988-07-29 Nec Corp Mos nonvolatile semiconductor storage device
JPS63266884A (en) * 1987-04-24 1988-11-02 Toshiba Corp Nonvolatile semiconductor memory
JPS63268192A (en) * 1987-04-24 1988-11-04 Toshiba Corp Nonvolatile semiconductor memory
JPS63268193A (en) * 1987-04-24 1988-11-04 Toshiba Corp Nonvolatile semiconductor memory
US5812453A (en) * 1987-04-24 1998-09-22 Kabushiki Kaisha Toshiba Programmable semiconductor memory
US5719805A (en) * 1987-04-24 1998-02-17 Kabushiki Kaisha Toshiba Electrically programmable non-volatile semiconductor memory including series connected memory cells and decoder circuitry for applying a ground voltage to non-selected circuit units
US6434043B2 (en) 1987-04-24 2002-08-13 Kabushiki Kaisha Toshiba Programmable semiconductor memory array having series-connected memory
US5313420A (en) * 1987-04-24 1994-05-17 Kabushiki Kaisha Toshiba Programmable semiconductor memory
US5245566A (en) * 1987-04-24 1993-09-14 Fujio Masuoka Programmable semiconductor
US6269021B1 (en) 1987-06-29 2001-07-31 Kabushiki Kaisha Toshiba Memory cell of nonvolatile semiconductor memory device
US6178116B1 (en) 1987-06-29 2001-01-23 Kabushiki Kaisha Toshiba Memory cell of non-volatile semiconductor memory device
US6011747A (en) * 1987-06-29 2000-01-04 Kabushiki Kaisha Toshiba Memory cell of non-volatile semiconductor memory device
US5148394A (en) * 1987-06-29 1992-09-15 Kabushiki Kaisha Toshiba Electrically programmable nonvolatile semiconductor memory device with nand cell structure
US6061271A (en) * 1987-06-29 2000-05-09 Kabushiki Kaisha Toshiba Memory cell of nonvolatile semiconductor memory device
US5877982A (en) * 1987-06-29 1999-03-02 Kabushiki Kaisha Toshiba Semiconductor memory device including circuitry for selecting a block in both read and write modes
US5270969A (en) * 1987-06-29 1993-12-14 Kabushiki Kaisha Toshiba Electrically programmable nonvolatile semiconductor memory device with nand cell structure
US6058051A (en) * 1987-06-29 2000-05-02 Kabushiki Kaisha Toshiba Memory cell of non-volatile semiconductor memory device
US6034899A (en) * 1987-06-29 2000-03-07 Kabushiki Kaisha Toshiba Memory cell of nonvolatile semiconductor memory device
US6549462B1 (en) 1987-06-29 2003-04-15 Kabushiki Kaisha Toshiba Memory cell of nonvolatile semiconductor memory device
US6545913B2 (en) 1987-06-29 2003-04-08 Kabushiki Kaisha Toshiba Memory cell of nonvolatile semiconductor memory device
US5877981A (en) * 1987-06-29 1999-03-02 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device having a matrix of memory cells
US5448517A (en) * 1987-06-29 1995-09-05 Kabushiki Kaisha Toshiba Electrically programmable nonvolatile semiconductor memory device with NAND cell structure
US5008856A (en) * 1987-06-29 1991-04-16 Kabushiki Kaisha Toshiba Electrically programmable nonvolatile semiconductor memory device with NAND cell structure
US5517449A (en) * 1987-06-29 1996-05-14 Kabushiki Kaisha Toshiba Memory cell of nonvolatile semiconductor memory device
US6072748A (en) * 1987-06-29 2000-06-06 Kabushiki Kaisha Toshiba Memory cell of nonvolatile semiconductor memory device
US6021073A (en) * 1987-06-29 2000-02-01 Kabushiki Kaisha Toshiba Memory cell of non-volatile semiconductor memory device
JPS645072A (en) * 1987-06-29 1989-01-10 Toshiba Corp Nonvolatile semiconductor memory device
US5745413A (en) * 1987-06-29 1998-04-28 Kabushiki Kaisha Toshiba Electrically programmable nonvolatile semiconductor memory device with NAND cell structure
JPH01133290A (en) * 1987-11-18 1989-05-25 Toshiba Corp Non-volatile semiconductor memory device
US5440509A (en) * 1987-11-18 1995-08-08 Kabushiki Kaisha Toshiba Electrically erasable programmable read-only memory with NAND cell structure and intermediate level voltages initially applied to bit lines
US5050125A (en) * 1987-11-18 1991-09-17 Kabushiki Kaisha Toshiba Electrically erasable programmable read-only memory with NAND cellstructure
US4939690A (en) * 1987-12-28 1990-07-03 Kabushiki Kaisha Toshiba Electrically erasable programmable read-only memory with NAND cell structure that suppresses memory cell threshold voltage variation
JPH027295A (en) * 1988-06-27 1990-01-11 Toshiba Corp Non-volatile semiconductor memory
US5295096A (en) * 1988-07-11 1994-03-15 Mitsubishi Denki Kabushiki Kaisha NAND type EEPROM and operating method therefor
JPH0294198A (en) * 1988-09-30 1990-04-04 Toshiba Corp Nonvolatile semiconductor memory device
JPH02260455A (en) * 1988-12-15 1990-10-23 Samsung Electron Co Ltd Electrically exasable and programmable semiconductor memory device and its eraoing method and its erasing programming method
US4962481A (en) * 1988-12-27 1990-10-09 Samsung Electronics Co., Ltd. EEPROM device with plurality of memory strings made of floating gate transistors connected in series
JPH06196718A (en) * 1993-10-12 1994-07-15 Toshiba Corp Nonvolatile semiconductor memory device
JPH06196717A (en) * 1993-10-12 1994-07-15 Toshiba Corp Nonvolatile semiconductor memory device
US5589699A (en) * 1993-12-27 1996-12-31 Kabushiki Kaisha Toshiba Electrically erasable programmable non-volatile semiconductor memory device having select gates and small number of contact holes
JPH07302855A (en) * 1995-06-05 1995-11-14 Toshiba Corp Non-volatile semiconductor storage device
JPH09120689A (en) * 1996-10-21 1997-05-06 Toshiba Corp Nonvolatile semiconductor memory

Also Published As

Publication number Publication date
JPH0143400B2 (en) 1989-09-20

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