JPS6428935A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6428935A JPS6428935A JP18517987A JP18517987A JPS6428935A JP S6428935 A JPS6428935 A JP S6428935A JP 18517987 A JP18517987 A JP 18517987A JP 18517987 A JP18517987 A JP 18517987A JP S6428935 A JPS6428935 A JP S6428935A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- side wall
- si3n4
- device region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
Abstract
PURPOSE:To restrain oxygen which is apt to take place during an oxidation process from penetrating into a device region, by a method wherein a region excluding the device region of an oxide film is removed and an exposed part of the oxide film is covered with a semiconductor layer formed by a selective oxidation operation of a semiconductor film. CONSTITUTION:A region excluding a device region of a pad SiO2 film 2 and an Si3N4 film 3 formed on a substrate 1 is removed; the substrate 1 is exposed; a poly-Si film 5 is formed on the Si3N4 film 3 and the substrate 1. The poly-Si film 5 is oxidized selectively; a side wall 7 is formed on a side wall part of the Si3N4 film 3 and the pad SiO2 film 2; after that, a device isolation oxide film 8 is formed by selective oxidation of the substrate 1 and the side wall 7 by making use of the Si3N4 film 3 as a mask. By this setup, because an exposed part 9 of the pad SiO2 can be protected easily by the side wall 7 composed of the poly-Si film, a stress at this part is reduced; it is possible to restrain oxygen from penetrating into a device region, which is apt to take place especially during an oxidation process; it is possible to make a bird's beak small.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18517987A JPS6428935A (en) | 1987-07-24 | 1987-07-24 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18517987A JPS6428935A (en) | 1987-07-24 | 1987-07-24 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6428935A true JPS6428935A (en) | 1989-01-31 |
Family
ID=16166222
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18517987A Pending JPS6428935A (en) | 1987-07-24 | 1987-07-24 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6428935A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4983537A (en) * | 1986-12-29 | 1991-01-08 | General Electric Company | Method of making a buried oxide field isolation structure |
| JP2006149538A (en) * | 2004-11-26 | 2006-06-15 | Matsushita Electric Ind Co Ltd | Air cleaner of air conditioner |
| CN112122108A (en) * | 2020-08-28 | 2020-12-25 | 丰泽区创智工业设计服务部 | High-efficient screening plant |
-
1987
- 1987-07-24 JP JP18517987A patent/JPS6428935A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4983537A (en) * | 1986-12-29 | 1991-01-08 | General Electric Company | Method of making a buried oxide field isolation structure |
| JP2006149538A (en) * | 2004-11-26 | 2006-06-15 | Matsushita Electric Ind Co Ltd | Air cleaner of air conditioner |
| CN112122108A (en) * | 2020-08-28 | 2020-12-25 | 丰泽区创智工业设计服务部 | High-efficient screening plant |
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