JPS6428872A - Semiconductor element for detecting radiation - Google Patents
Semiconductor element for detecting radiationInfo
- Publication number
- JPS6428872A JPS6428872A JP62183344A JP18334487A JPS6428872A JP S6428872 A JPS6428872 A JP S6428872A JP 62183344 A JP62183344 A JP 62183344A JP 18334487 A JP18334487 A JP 18334487A JP S6428872 A JPS6428872 A JP S6428872A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- guard ring
- aluminum electrode
- whole surface
- protective film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Light Receiving Elements (AREA)
- Measurement Of Radiation (AREA)
Abstract
PURPOSE:To prevent the leak current on the surface of a detecting element, by installing a guard ring of adequate structure on the surface of a P-N junction type semiconductor detection element of radiation. CONSTITUTION:By thermal diffusion treatment, a P<+> layer 2, a P<+> layer 3, and a P<+> layer 4 of guard ring are formed on a P-type silicon substrate 1. A silicon protective film 6 is arranged on the whole surface of an N<+> layer 2 side. By photo etching, a part of the silicon protective film 6 is eliminated, and an aluminum electrode 7 electrically connected to the N<+> layer 2 is vapor- deposited. By thermal diffusion method, a P<+> layer 3 is formed on the whole surface opposite to the N<+> layer 2, and thereon an aluminum electrode 8 being an opposite electrode is grounded, by applying a positive bias to the whole surface of the aluminum electrode 7. When the bias is applied, a large depletion layer 5 extends in the P-N junction part of the N<+> layer 2. The growing depletion layer 5 reaches the guard ring 4. The leak current can be prevented, by making the length of the guard ring adequate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62183344A JPS6428872A (en) | 1987-07-24 | 1987-07-24 | Semiconductor element for detecting radiation |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62183344A JPS6428872A (en) | 1987-07-24 | 1987-07-24 | Semiconductor element for detecting radiation |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6428872A true JPS6428872A (en) | 1989-01-31 |
Family
ID=16134085
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62183344A Pending JPS6428872A (en) | 1987-07-24 | 1987-07-24 | Semiconductor element for detecting radiation |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6428872A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5304824A (en) * | 1990-08-31 | 1994-04-19 | Sumitomo Electric Industries, Ltd. | Photo-sensing device |
JP2007209242A (en) * | 2006-02-09 | 2007-08-23 | Yoshihiro Mikami | Fish-attracting body |
-
1987
- 1987-07-24 JP JP62183344A patent/JPS6428872A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5304824A (en) * | 1990-08-31 | 1994-04-19 | Sumitomo Electric Industries, Ltd. | Photo-sensing device |
JP2007209242A (en) * | 2006-02-09 | 2007-08-23 | Yoshihiro Mikami | Fish-attracting body |
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