JPS6428296A - Synthesis of diamond in vapor phase - Google Patents

Synthesis of diamond in vapor phase

Info

Publication number
JPS6428296A
JPS6428296A JP18122487A JP18122487A JPS6428296A JP S6428296 A JPS6428296 A JP S6428296A JP 18122487 A JP18122487 A JP 18122487A JP 18122487 A JP18122487 A JP 18122487A JP S6428296 A JPS6428296 A JP S6428296A
Authority
JP
Japan
Prior art keywords
substrate
diamond
wire
slit
heater
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18122487A
Other languages
English (en)
Inventor
Kunio Komaki
Isamu Yamamoto
Takashi Fujimaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Holdings Corp
Original Assignee
Showa Denko KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko KK filed Critical Showa Denko KK
Priority to JP18122487A priority Critical patent/JPS6428296A/ja
Publication of JPS6428296A publication Critical patent/JPS6428296A/ja
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP18122487A 1987-07-22 1987-07-22 Synthesis of diamond in vapor phase Pending JPS6428296A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18122487A JPS6428296A (en) 1987-07-22 1987-07-22 Synthesis of diamond in vapor phase

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18122487A JPS6428296A (en) 1987-07-22 1987-07-22 Synthesis of diamond in vapor phase

Publications (1)

Publication Number Publication Date
JPS6428296A true JPS6428296A (en) 1989-01-30

Family

ID=16096982

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18122487A Pending JPS6428296A (en) 1987-07-22 1987-07-22 Synthesis of diamond in vapor phase

Country Status (1)

Country Link
JP (1) JPS6428296A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU614605B2 (en) * 1988-04-28 1991-09-05 De Beers Industrial Diamond Division (Proprietary) Limited Diamond growth

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU614605B2 (en) * 1988-04-28 1991-09-05 De Beers Industrial Diamond Division (Proprietary) Limited Diamond growth

Similar Documents

Publication Publication Date Title
US5861609A (en) Method and apparatus for rapid thermal processing
BR9005227A (pt) Processo para preparacao de reagentes vaporizados
US5209182A (en) Chemical vapor deposition apparatus for forming thin film
DE69808803T2 (de) Züchtung von sehr gleichmässigen epitaktischen schichten aus silizium karbid
GB940236A (en) Improvements in or relating to layers of semiconductor material
GB1236913A (en) Manufacture of silicon carbide
US5225245A (en) Chemical vapor deposition method for forming thin film
JPS6428296A (en) Synthesis of diamond in vapor phase
CN105648425B (zh) 一种化学气相沉积装置及其温控方法
GB1105870A (en) Manufacture of silicon carbide ribbons
US3304908A (en) Epitaxial reactor including mask-work support
GB1291357A (en) Improvements in or relating to radiation heated reactors
US5479874A (en) CVD diamond production using preheating
GB934673A (en) Improvements in or relating to the production of semi-conductor materials
GB1124328A (en) Improvements in or relating to the epitaxial deposition of crystalline layers
JPH069187B2 (ja) 試料加熱装置並びに常圧cvd装置および減圧cvd装置
GB1378302A (en) Production of semiconductor rods
JPS5629337A (en) Formation of silicon nitride film
JPS6447850A (en) Manufacture of thermoelement
Gesheva et al. Deposition and study of CVD-tantalum carbide thin films
FR2114105A5 (en) Epitaxial radiation heated reactor - including a quartz reaction chamber
Muhsin Chemical vapor deposition of aluminum oxide (Al2O3) and beta iron disilicide (β-FeSi2) thin films
Ohashi et al. GaCl molecular beam cell for surface dynamics studies
KR980011761A (ko) 반도체 소자 제조장치
CA2087771A1 (en) Preheater for cvd diamond reactor