JPS6428296A - Synthesis of diamond in vapor phase - Google Patents

Abstract

PURPOSE:To effect the deposition of uniform diamond on a stably and efficiently heated substrate in high rate of deposition using a vapor process, by using a substrate table composed of a molded article of hexagonal BN having built-in heater and heating the substrate on the table. CONSTITUTION:A molded article of hexagonal BN is processed in the form of e.g. a plate of 3-30mm thick. A slit 2 is formed at the middle of the thickness and a heater 3 such as nichrome wire, alumel wire, chromel wire or tungsten wire having a prescribed form is inserted into the slit. A lead wire is extended through the plate at a part opposite to the slit 2 and a thermocouple 4 for determining the substrate temperature is attached to the plate to obtain a substrate table 1. A substrate 5 such as a silicon wafer is placed on the table and heated at 500-1,000 deg.C with the heater 3. A diamond-forming gas produced by the thermal decomposition of an organic compound such as CH4, C2H6 or methanol is optionally mixed with H2 gas and the gas is excited with microwave, etc., to deposit a diamond on the substrate 5.