JPS6425573A - Thin film transistor - Google Patents

Thin film transistor

Info

Publication number
JPS6425573A
JPS6425573A JP18105587A JP18105587A JPS6425573A JP S6425573 A JPS6425573 A JP S6425573A JP 18105587 A JP18105587 A JP 18105587A JP 18105587 A JP18105587 A JP 18105587A JP S6425573 A JPS6425573 A JP S6425573A
Authority
JP
Japan
Prior art keywords
cvd method
pressure cvd
patterning
region
tft
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18105587A
Other languages
Japanese (ja)
Inventor
Genshirou Kawachi
Masao Yoshimura
Kikuo Ono
Nobutake Konishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP18105587A priority Critical patent/JPS6425573A/en
Publication of JPS6425573A publication Critical patent/JPS6425573A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)

Abstract

PURPOSE:To provide a TFT capable of being reduced in off-current upon light irradiation by producing specific density defects only in a specific area within a TFT channel region other than space charge regions formed in the vicinity of drain and source junctions. CONSTITUTION:An islet-like element region 8 is formed by depositing a polycrystalline silicon film of, for example, 1500 Kt on an insulating substrate 1 by a reduced pressure CVD method and subjecting the same to patterning. Then, a resist 11 is formed and employed as a mask to yield a high density defect layer 10 by doping the islet-like element region 8 with Ar<+> ions under conditions of acceleration voltage of 110 KeV and the dosage of 1X10<16>cm<-2>. In succession, a SiO2 film is deposited by an ordinary pressure CVD method, followed by deposition thereon of a polycrystalline silicon film by a reduced pressure CVD method and patterning of the same to form a gate insulating film 2 and a gate electrode 3. In addition, a drain region 5 and a source region 6 are formed by ion-doping of p<+> for example. Furthermore, an interlayer insulating film is formed by the ordinary pressure CVD method, through which contact holes are made in turn. Finally, Al is vapordeposited and subjected to patterning to form a contact electrode 7 and hence a TFT.
JP18105587A 1987-07-22 1987-07-22 Thin film transistor Pending JPS6425573A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18105587A JPS6425573A (en) 1987-07-22 1987-07-22 Thin film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18105587A JPS6425573A (en) 1987-07-22 1987-07-22 Thin film transistor

Publications (1)

Publication Number Publication Date
JPS6425573A true JPS6425573A (en) 1989-01-27

Family

ID=16093987

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18105587A Pending JPS6425573A (en) 1987-07-22 1987-07-22 Thin film transistor

Country Status (1)

Country Link
JP (1) JPS6425573A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02280380A (en) * 1989-04-20 1990-11-16 Mitsubishi Electric Corp Semiconductor device
EP0735592A2 (en) * 1995-03-31 1996-10-02 Nippon Telegraph And Telephone Corporation MOS thin film transistor and method of fabricating the same
EP0801427A2 (en) * 1996-04-11 1997-10-15 Matsushita Electric Industrial Co., Ltd. Field effect transistor, semiconductor storage device, method of manufacturing the same and method of driving semiconductor storage device
KR100233803B1 (en) * 1995-10-09 1999-12-01 마찌다 가쯔히꼬 Thin film transistor and the manufacturing method thereof
WO2001050515A1 (en) * 2000-01-07 2001-07-12 Seiko Epson Corporation Thin-film transistor
WO2001050516A1 (en) * 2000-01-07 2001-07-12 Seiko Epson Corporation Method of manufacturing a thin-film transistor
US6765265B2 (en) * 2000-01-07 2004-07-20 Seiko Epson Corporation System and method for manufacturing a thin film transistor

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02280380A (en) * 1989-04-20 1990-11-16 Mitsubishi Electric Corp Semiconductor device
EP0735592A2 (en) * 1995-03-31 1996-10-02 Nippon Telegraph And Telephone Corporation MOS thin film transistor and method of fabricating the same
EP0735592A3 (en) * 1995-03-31 1997-11-05 Nippon Telegraph And Telephone Corporation MOS thin film transistor and method of fabricating the same
KR100233803B1 (en) * 1995-10-09 1999-12-01 마찌다 가쯔히꼬 Thin film transistor and the manufacturing method thereof
EP0801427A2 (en) * 1996-04-11 1997-10-15 Matsushita Electric Industrial Co., Ltd. Field effect transistor, semiconductor storage device, method of manufacturing the same and method of driving semiconductor storage device
EP0801427A3 (en) * 1996-04-11 1999-05-06 Matsushita Electric Industrial Co., Ltd. Field effect transistor, semiconductor storage device, method of manufacturing the same and method of driving semiconductor storage device
WO2001050515A1 (en) * 2000-01-07 2001-07-12 Seiko Epson Corporation Thin-film transistor
WO2001050516A1 (en) * 2000-01-07 2001-07-12 Seiko Epson Corporation Method of manufacturing a thin-film transistor
US6621101B2 (en) 2000-01-07 2003-09-16 Seiko Epson Corporation Thin-film transistor
GB2358079B (en) * 2000-01-07 2004-02-18 Seiko Epson Corp Thin-film transistor
US6727123B2 (en) 2000-01-07 2004-04-27 Seiko Epson Corporation Method for manufacturing a thin-film transistor comprising a recombination center
GB2358080B (en) * 2000-01-07 2004-06-02 Seiko Epson Corp Method of manufacturing a thin-film transistor
US6765265B2 (en) * 2000-01-07 2004-07-20 Seiko Epson Corporation System and method for manufacturing a thin film transistor

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