JPS642375A - Infrared detector - Google Patents
Infrared detectorInfo
- Publication number
- JPS642375A JPS642375A JP62156583A JP15658387A JPS642375A JP S642375 A JPS642375 A JP S642375A JP 62156583 A JP62156583 A JP 62156583A JP 15658387 A JP15658387 A JP 15658387A JP S642375 A JPS642375 A JP S642375A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- onto
- substrate
- shaped
- ccd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE: To form a single crystal layer capable of forming an infrared detecting element having high quality onto an Si substrate, to which a signal processing circuit element is shaped, by forming a buffer layer onto the element forming Si substrate to which the signal processing circuit element is shaped.
CONSTITUTION: In an element forming Si substrate 10, an input diode 16 and a buried type CCD 18 are formed into an element isolation region on the main surface of a P-type Si substrate 12. A transfer gate electrode 22 is shaped onto a clearance section between the diode 16 and the CCD 18, and a CCD transfer electrode 26 is formed onto the CCD 18. A crystal layer 28 consisting of CaF2 and BaP2 is grown and shaped to such a substrate 10 so that the composition ratio of BaF2 is increased gradually. A single crystal film 30 as a CdZnTe layer 30 is formed onto the layer 28. An infrared detecting element composed of a P-type HgCdTe layer 32 and an N-type HgZnTe layer 34 is shaped onto the layer 30. Accordingly, the infrared detecting element can be formed onto a signal processing circuit element made up of Si.
COPYRIGHT: (C)1989,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62-156583A JPH012375A (en) | 1987-06-25 | infrared detection device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62-156583A JPH012375A (en) | 1987-06-25 | infrared detection device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS642375A true JPS642375A (en) | 1989-01-06 |
JPH012375A JPH012375A (en) | 1989-01-06 |
Family
ID=
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7892879B2 (en) | 2004-08-02 | 2011-02-22 | Qinetiq Limited | Manufacture of cadmium mercury telluride on patterned silicon |
US8021914B2 (en) | 2004-04-06 | 2011-09-20 | Qinetiq Limited | Manufacture of cadmium mercury telluride |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8021914B2 (en) | 2004-04-06 | 2011-09-20 | Qinetiq Limited | Manufacture of cadmium mercury telluride |
US7892879B2 (en) | 2004-08-02 | 2011-02-22 | Qinetiq Limited | Manufacture of cadmium mercury telluride on patterned silicon |
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