JPS642375A - Infrared detector - Google Patents

Infrared detector

Info

Publication number
JPS642375A
JPS642375A JP62156583A JP15658387A JPS642375A JP S642375 A JPS642375 A JP S642375A JP 62156583 A JP62156583 A JP 62156583A JP 15658387 A JP15658387 A JP 15658387A JP S642375 A JPS642375 A JP S642375A
Authority
JP
Japan
Prior art keywords
layer
onto
substrate
shaped
ccd
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62156583A
Other languages
Japanese (ja)
Other versions
JPH012375A (en
Inventor
Kenji Udagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to JP62-156583A priority Critical patent/JPH012375A/en
Priority claimed from JP62-156583A external-priority patent/JPH012375A/en
Publication of JPS642375A publication Critical patent/JPS642375A/en
Publication of JPH012375A publication Critical patent/JPH012375A/en
Pending legal-status Critical Current

Links

Landscapes

  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE: To form a single crystal layer capable of forming an infrared detecting element having high quality onto an Si substrate, to which a signal processing circuit element is shaped, by forming a buffer layer onto the element forming Si substrate to which the signal processing circuit element is shaped.
CONSTITUTION: In an element forming Si substrate 10, an input diode 16 and a buried type CCD 18 are formed into an element isolation region on the main surface of a P-type Si substrate 12. A transfer gate electrode 22 is shaped onto a clearance section between the diode 16 and the CCD 18, and a CCD transfer electrode 26 is formed onto the CCD 18. A crystal layer 28 consisting of CaF2 and BaP2 is grown and shaped to such a substrate 10 so that the composition ratio of BaF2 is increased gradually. A single crystal film 30 as a CdZnTe layer 30 is formed onto the layer 28. An infrared detecting element composed of a P-type HgCdTe layer 32 and an N-type HgZnTe layer 34 is shaped onto the layer 30. Accordingly, the infrared detecting element can be formed onto a signal processing circuit element made up of Si.
COPYRIGHT: (C)1989,JPO&Japio
JP62-156583A 1987-06-25 infrared detection device Pending JPH012375A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62-156583A JPH012375A (en) 1987-06-25 infrared detection device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62-156583A JPH012375A (en) 1987-06-25 infrared detection device

Publications (2)

Publication Number Publication Date
JPS642375A true JPS642375A (en) 1989-01-06
JPH012375A JPH012375A (en) 1989-01-06

Family

ID=

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7892879B2 (en) 2004-08-02 2011-02-22 Qinetiq Limited Manufacture of cadmium mercury telluride on patterned silicon
US8021914B2 (en) 2004-04-06 2011-09-20 Qinetiq Limited Manufacture of cadmium mercury telluride

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8021914B2 (en) 2004-04-06 2011-09-20 Qinetiq Limited Manufacture of cadmium mercury telluride
US7892879B2 (en) 2004-08-02 2011-02-22 Qinetiq Limited Manufacture of cadmium mercury telluride on patterned silicon

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