JPS642359A - Hetero-junction bipolar transistor - Google Patents

Hetero-junction bipolar transistor

Info

Publication number
JPS642359A
JPS642359A JP15810187A JP15810187A JPS642359A JP S642359 A JPS642359 A JP S642359A JP 15810187 A JP15810187 A JP 15810187A JP 15810187 A JP15810187 A JP 15810187A JP S642359 A JPS642359 A JP S642359A
Authority
JP
Japan
Prior art keywords
layer
layers
collector
impurity
depletion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15810187A
Other languages
Japanese (ja)
Other versions
JPH012359A (en
JPH0620070B2 (en
Inventor
Kazuhiko Honjo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP15810187A priority Critical patent/JPH0620070B2/en
Priority to DE8787119044T priority patent/DE3780284T2/en
Priority to EP87119044A priority patent/EP0273363B1/en
Priority to US07/136,589 priority patent/US4929997A/en
Publication of JPH012359A publication Critical patent/JPH012359A/en
Publication of JPS642359A publication Critical patent/JPS642359A/en
Publication of JPH0620070B2 publication Critical patent/JPH0620070B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To transit electrons, which are injected from an emitter layer and passed through a base layer, in a depletion layer section in a collector, and to prevent the decrease of the speed of travel by forming one layer of another collector layer consisting of an impurity having the same conductivity type as a collector layer onto the interface between the collector layer and the base layer and reducing electron affinity in order of the collector, the impurity and the base layer.
CONSTITUTION: The surface of a semi-insulating substrate 1 is partitioned by an insulating region 1a shaped by ion-implanting proton, and a high concentration layer 2 having impurity concentration at a specified value is formed, using Si as a dopant. Collector layers 3, 4 having specified impurity concentration, employing Si and Be dopants, a base layer 5, emitter layers 6a, 6b and a high concentration layer 7 are formed onto the layer 2. Electrons 9 being injected from the layers 6a, 6b and passing through the layer 5 ballistic-fly in a depletion layer, employing δB'c as initial energy in the discontinuity of energy on the basis of the difference of electron affinity between the layers 5, 4, lose kinetic energy when they travel in a mean free path, and pass in depletion layers in the layers 4, 3.
COPYRIGHT: (C)1989,JPO&Japio
JP15810187A 1986-12-22 1987-06-24 Heterojunction bipolar transistor Expired - Fee Related JPH0620070B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP15810187A JPH0620070B2 (en) 1987-06-24 1987-06-24 Heterojunction bipolar transistor
DE8787119044T DE3780284T2 (en) 1986-12-22 1987-12-22 BIPOLAR HETEROUISITION TRANSISTOR WITH BALLISTIC OPERATION.
EP87119044A EP0273363B1 (en) 1986-12-22 1987-12-22 Heterojunction bipolar transistor with ballistic operation
US07/136,589 US4929997A (en) 1986-12-22 1987-12-22 Heterojunction bipolar transistor with ballistic operation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15810187A JPH0620070B2 (en) 1987-06-24 1987-06-24 Heterojunction bipolar transistor

Publications (3)

Publication Number Publication Date
JPH012359A JPH012359A (en) 1989-01-06
JPS642359A true JPS642359A (en) 1989-01-06
JPH0620070B2 JPH0620070B2 (en) 1994-03-16

Family

ID=15664324

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15810187A Expired - Fee Related JPH0620070B2 (en) 1986-12-22 1987-06-24 Heterojunction bipolar transistor

Country Status (1)

Country Link
JP (1) JPH0620070B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5785560A (en) * 1995-10-13 1998-07-28 Yazaki Corporation Ignition cable connection terminal

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5785560A (en) * 1995-10-13 1998-07-28 Yazaki Corporation Ignition cable connection terminal

Also Published As

Publication number Publication date
JPH0620070B2 (en) 1994-03-16

Similar Documents

Publication Publication Date Title
GB1485540A (en) Integrated circuits
JPS6472562A (en) Transistor
JPS5713772A (en) Semiconductor device and manufacture thereof
JPS642359A (en) Hetero-junction bipolar transistor
JPS5524482A (en) Mono-cyrstalline silicon
JPS642360A (en) Hetero-junction bipolar transistor
JPS5473585A (en) Gate turn-off thyristor
JPS6444064A (en) Hetero-junction bipolar transistor
JPS56150862A (en) Semiconductor device
JPS54141596A (en) Semiconductor device
JPS6459957A (en) Heterojunction bipolar transistor
JPS55113371A (en) Power transistor
JPS5593256A (en) Semiconductor device
JPS54148486A (en) Semiconductor device
JPS642358A (en) Hetero-junction bipolar transistor
JPS5637665A (en) Semiconductor device
JPS5760872A (en) Vertical-type semiconductor device
JPS5382276A (en) Production of semiconductor device
JPS54129987A (en) Thyristor
JPS6421964A (en) Hetero-bipolar transistor
JPS5696860A (en) Semiconductor device
JPS56150848A (en) Semiconductor integrated circuit and lateral transistor
JPS574157A (en) Semiconductor device
JPS5776873A (en) Manufacture of semiconductor device
JPS56148862A (en) Semiconductor device

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees