JPS642359A - Hetero-junction bipolar transistor - Google Patents
Hetero-junction bipolar transistorInfo
- Publication number
- JPS642359A JPS642359A JP15810187A JP15810187A JPS642359A JP S642359 A JPS642359 A JP S642359A JP 15810187 A JP15810187 A JP 15810187A JP 15810187 A JP15810187 A JP 15810187A JP S642359 A JPS642359 A JP S642359A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- layers
- collector
- impurity
- depletion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To transit electrons, which are injected from an emitter layer and passed through a base layer, in a depletion layer section in a collector, and to prevent the decrease of the speed of travel by forming one layer of another collector layer consisting of an impurity having the same conductivity type as a collector layer onto the interface between the collector layer and the base layer and reducing electron affinity in order of the collector, the impurity and the base layer.
CONSTITUTION: The surface of a semi-insulating substrate 1 is partitioned by an insulating region 1a shaped by ion-implanting proton, and a high concentration layer 2 having impurity concentration at a specified value is formed, using Si as a dopant. Collector layers 3, 4 having specified impurity concentration, employing Si and Be dopants, a base layer 5, emitter layers 6a, 6b and a high concentration layer 7 are formed onto the layer 2. Electrons 9 being injected from the layers 6a, 6b and passing through the layer 5 ballistic-fly in a depletion layer, employing δB'c as initial energy in the discontinuity of energy on the basis of the difference of electron affinity between the layers 5, 4, lose kinetic energy when they travel in a mean free path, and pass in depletion layers in the layers 4, 3.
COPYRIGHT: (C)1989,JPO&Japio
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15810187A JPH0620070B2 (en) | 1987-06-24 | 1987-06-24 | Heterojunction bipolar transistor |
DE8787119044T DE3780284T2 (en) | 1986-12-22 | 1987-12-22 | BIPOLAR HETEROUISITION TRANSISTOR WITH BALLISTIC OPERATION. |
EP87119044A EP0273363B1 (en) | 1986-12-22 | 1987-12-22 | Heterojunction bipolar transistor with ballistic operation |
US07/136,589 US4929997A (en) | 1986-12-22 | 1987-12-22 | Heterojunction bipolar transistor with ballistic operation |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15810187A JPH0620070B2 (en) | 1987-06-24 | 1987-06-24 | Heterojunction bipolar transistor |
Publications (3)
Publication Number | Publication Date |
---|---|
JPH012359A JPH012359A (en) | 1989-01-06 |
JPS642359A true JPS642359A (en) | 1989-01-06 |
JPH0620070B2 JPH0620070B2 (en) | 1994-03-16 |
Family
ID=15664324
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15810187A Expired - Fee Related JPH0620070B2 (en) | 1986-12-22 | 1987-06-24 | Heterojunction bipolar transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0620070B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5785560A (en) * | 1995-10-13 | 1998-07-28 | Yazaki Corporation | Ignition cable connection terminal |
-
1987
- 1987-06-24 JP JP15810187A patent/JPH0620070B2/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5785560A (en) * | 1995-10-13 | 1998-07-28 | Yazaki Corporation | Ignition cable connection terminal |
Also Published As
Publication number | Publication date |
---|---|
JPH0620070B2 (en) | 1994-03-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |