JPS6422071A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6422071A JPS6422071A JP17821787A JP17821787A JPS6422071A JP S6422071 A JPS6422071 A JP S6422071A JP 17821787 A JP17821787 A JP 17821787A JP 17821787 A JP17821787 A JP 17821787A JP S6422071 A JPS6422071 A JP S6422071A
- Authority
- JP
- Japan
- Prior art keywords
- type
- layer
- source
- diffusion layer
- ion implantation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To enable the device structure wherein the side-gate effect does not occur, by forming a second conductivity type diffusion layer which does not come into contact with the channel part of a first conductivity type field effect transistor, but comes into contact with the source diffusion layer. CONSTITUTION:The title field effect transistor FET is constituted of the following; a semi-insulating substrate 1, a drain N-type diffusion layer 2, a gate electrode 3, a channel 4, a source N-type diffusion layer 5, a P-type absorption layer 6 to absorb hole being a second conductivity type carrier, a drain electrode 7 and a source electrode 8. The N-type layers 2, 4, 5 are formed by ion implantation of silicon, and turn to high concentration layers. The P-type layer 6 is formed by ion implantation of Zn, Mg, Be, etc. Source drain ion implantation can serve as annealing. As the result, a P-N junction being in contact with the P-type layer 6 and the N-type layer 2 or the N-type layer 5 turns to a high concentration region, and the leak current becomes large, so that floating hole is sufficiently absorbed without connection applying metal electrodes. When the P-type layer is provided with an ohmic electrode of metal, low concentration is available to the P-type layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17821787A JPS6422071A (en) | 1987-07-17 | 1987-07-17 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17821787A JPS6422071A (en) | 1987-07-17 | 1987-07-17 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6422071A true JPS6422071A (en) | 1989-01-25 |
Family
ID=16044632
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17821787A Pending JPS6422071A (en) | 1987-07-17 | 1987-07-17 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6422071A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5383792A (en) * | 1989-02-21 | 1995-01-24 | The Whitaker Corporation | Insertable latch means for use in an electrical connector |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58148466A (en) * | 1982-02-26 | 1983-09-03 | Mitsubishi Electric Corp | Semiconductor device |
JPS61267369A (en) * | 1985-05-22 | 1986-11-26 | Hitachi Ltd | Field effect transistor |
-
1987
- 1987-07-17 JP JP17821787A patent/JPS6422071A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58148466A (en) * | 1982-02-26 | 1983-09-03 | Mitsubishi Electric Corp | Semiconductor device |
JPS61267369A (en) * | 1985-05-22 | 1986-11-26 | Hitachi Ltd | Field effect transistor |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5383792A (en) * | 1989-02-21 | 1995-01-24 | The Whitaker Corporation | Insertable latch means for use in an electrical connector |
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