JPS6421957A - Image sensor - Google Patents
Image sensorInfo
- Publication number
- JPS6421957A JPS6421957A JP62177778A JP17777887A JPS6421957A JP S6421957 A JPS6421957 A JP S6421957A JP 62177778 A JP62177778 A JP 62177778A JP 17777887 A JP17777887 A JP 17777887A JP S6421957 A JPS6421957 A JP S6421957A
- Authority
- JP
- Japan
- Prior art keywords
- light
- electrode
- film
- transmitting
- laminated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Transforming Light Signals Into Electric Signals (AREA)
- Facsimile Heads (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
PURPOSE:To reduce the space of a light-transmitting upper-electrode without deteriorating the characteristics for reducing the increase in the resistance by a method wherein an interlayer film comprising a light-transmitting insulating material is provided on the light- transmitting upper-electrode while a glare protective film comprising a conductive material is formed on the interlayer film to electrically connect the light-transmitting upper-electrode to the light-shielding film. CONSTITUTION:A substrate 1, the first electrode 2 laminated on the substrate 1, a photoelectric conversion layer 3 laminated on the first electrode 2, the second light-transmitting electrode 4 laminated on the photoelectric conversion layer 3, a light-transmitting interlayer film 5 formed on the second electrode 4 and a light-shielding film 7 regulating a space of receiving light entering into the second electrode 4 through the intermediary of the interlayer film 5 are provided. Then, the light-shielding film 7 comprising a conductive material is electrically connected to the second light-transmitting electrode 4. For example the individual Cr electrode 2 is formed on the insulating substrate 1; the a-Si:H film 3 and the ITO film 4 are laminated on the electrode 2; the interlayer film comprising a light-transmitting polyimide film 5 is formed covering the photoelectric conversion layer 3; the conductive light-shielding film 7 comprising Al is formed on the interlayer film; and the ITO film 4 and the light-shielding film 7 of Al are electrically connected by an opening 6.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62177778A JPS6421957A (en) | 1987-07-16 | 1987-07-16 | Image sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62177778A JPS6421957A (en) | 1987-07-16 | 1987-07-16 | Image sensor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6421957A true JPS6421957A (en) | 1989-01-25 |
Family
ID=16036949
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62177778A Pending JPS6421957A (en) | 1987-07-16 | 1987-07-16 | Image sensor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6421957A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6452348U (en) * | 1987-09-25 | 1989-03-31 | ||
US6140097A (en) * | 1997-03-04 | 2000-10-31 | Meiji Seika Kaisha Ltd. | Mesophilic xylanases |
JP2007103967A (en) * | 1999-08-04 | 2007-04-19 | Sharp Corp | Two-dimensional image detector |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6037161A (en) * | 1983-08-09 | 1985-02-26 | Toshiba Corp | Photoelectric conversion element |
-
1987
- 1987-07-16 JP JP62177778A patent/JPS6421957A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6037161A (en) * | 1983-08-09 | 1985-02-26 | Toshiba Corp | Photoelectric conversion element |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6452348U (en) * | 1987-09-25 | 1989-03-31 | ||
US6140097A (en) * | 1997-03-04 | 2000-10-31 | Meiji Seika Kaisha Ltd. | Mesophilic xylanases |
JP2007103967A (en) * | 1999-08-04 | 2007-04-19 | Sharp Corp | Two-dimensional image detector |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0221767A3 (en) | Fault tolerant thin-film photovoltaic cell | |
EP0372929A3 (en) | Light transmitting electrically conductive stacked film | |
JPS5496997A (en) | Electrochromic light volume control component | |
JPS55107276A (en) | Photoelectromotive force device | |
JPS5692634A (en) | Input device for transparent piezoelectric coordinate | |
JPS6421957A (en) | Image sensor | |
JPS5627562A (en) | Tight image sensor | |
JPS5724171A (en) | Solid state image sensor | |
JPS57114292A (en) | Thin film image pickup element | |
JPS57184255A (en) | Solar cell | |
JPS57115880A (en) | Thin film image pickup device in two dimensions | |
JPS57106084A (en) | Amorphous silicon diode | |
JPS5710983A (en) | Photo sensor | |
JPH0521892Y2 (en) | ||
JPS5669875A (en) | Amorphous semiconductor solar cell | |
JPS57157578A (en) | Active crystalline silicon thin film photovoltaic element | |
JPS5669873A (en) | Manufacture of solar cell | |
JPS57183076A (en) | Field control type optical semiconductor device | |
JPS6473763A (en) | Image sensor | |
JPS6421956A (en) | Contact type image sensor | |
JPS55123177A (en) | Solar cell | |
JPS57208168A (en) | Image sensor | |
JPS5732183A (en) | Solid state image pickup device | |
JPS57126174A (en) | Thin film solar cell | |
JPS6431457A (en) | Manufacture of thin film transistor |