JPS6418249A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6418249A JPS6418249A JP62175131A JP17513187A JPS6418249A JP S6418249 A JPS6418249 A JP S6418249A JP 62175131 A JP62175131 A JP 62175131A JP 17513187 A JP17513187 A JP 17513187A JP S6418249 A JPS6418249 A JP S6418249A
- Authority
- JP
- Japan
- Prior art keywords
- capacitance
- electrode
- groove
- substrate
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 6
- 239000004020 conductor Substances 0.000 abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
PURPOSE:To reduce an area on a wafer required to obtain a capacitance value identical to the conventional capacitance by a method wherein a groove is made in a silicon substrate, the substrate is used as a first electrode for the capacitance, an insulating film is formed on side walls and a bottom face of the groove made in the substrate, the groove is filled with a conductor and the conductor is used as a second electrode for the capacitance. CONSTITUTION:A groove is made in a silicon substrate 1; the substrate 1 is used as a first electrode 6 for the capacitance; an insulating film 7 is formed on side walls and a bottom face of the groove made in the substrate 1; the groove is filled with a conductor; this conductor is used as a second electrode 8 for the capacitance. Although an area for the formed capacitance by piling up the first electrode 6 and the second electrode 8 is large, a plane area on the wafer 1 is small. By this setup, it is possible to obtain a high-capacitance value even with a small area on the wafer required to form the capacitance in the boosting circuit of a semiconductor nonvolatile memory.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62175131A JPS6418249A (en) | 1987-07-14 | 1987-07-14 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62175131A JPS6418249A (en) | 1987-07-14 | 1987-07-14 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6418249A true JPS6418249A (en) | 1989-01-23 |
Family
ID=15990828
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62175131A Pending JPS6418249A (en) | 1987-07-14 | 1987-07-14 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6418249A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003309182A (en) * | 2002-04-17 | 2003-10-31 | Hitachi Ltd | Method of manufacturing semiconductor device and semiconductor device |
JP2009071325A (en) * | 2008-11-25 | 2009-04-02 | Renesas Technology Corp | Semiconductor device and method for manufacturing the same |
-
1987
- 1987-07-14 JP JP62175131A patent/JPS6418249A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003309182A (en) * | 2002-04-17 | 2003-10-31 | Hitachi Ltd | Method of manufacturing semiconductor device and semiconductor device |
JP2009071325A (en) * | 2008-11-25 | 2009-04-02 | Renesas Technology Corp | Semiconductor device and method for manufacturing the same |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR930017082A (en) | Semiconductor device with bonding layer and manufacturing method thereof | |
JPS5681968A (en) | Manufacture of semiconductor device | |
EP0236123A3 (en) | A semiconductor device and method for preparing the same | |
JPS5591862A (en) | Semiconductor device | |
JPS5563840A (en) | Semiconductor integrated device | |
JPS56125868A (en) | Thin-film semiconductor device | |
JPS6418249A (en) | Semiconductor device | |
JPS6418253A (en) | Semiconductor memory cell and its manufacture | |
JPS6480066A (en) | Semiconductor integrated circuit device | |
JPS5367388A (en) | Memory semiconductor device | |
JPS5764965A (en) | Semiconductor device | |
JPS6449251A (en) | Manufacture of groove-shaped capacitor | |
JPS52141591A (en) | Process of semiconductor device | |
JPS6411362A (en) | Semiconductor integrated circuit device | |
JPS5694767A (en) | Semiconductor device | |
JPS57103349A (en) | Semiconductor memory device | |
JPS54143076A (en) | Semiconductor device and its manufacture | |
KR960014727B1 (en) | Method of making a memory capacitor in semiconductor device | |
JPS5775452A (en) | Mos capacitor in semiconductor integrated circuit and manufacture thereof | |
JPS5326585A (en) | Production of mis semiconductor device | |
KR880008449A (en) | Manufacturing method of DRAM capacitor | |
JPS56138946A (en) | Semiconductor device | |
JPS5285489A (en) | Semiconductor reactance element | |
JPS57160156A (en) | Semiconductor device | |
JPS5392679A (en) | Semiconductor device |