JPS6418236A - Removal of static electricity - Google Patents

Removal of static electricity

Info

Publication number
JPS6418236A
JPS6418236A JP62174270A JP17427087A JPS6418236A JP S6418236 A JPS6418236 A JP S6418236A JP 62174270 A JP62174270 A JP 62174270A JP 17427087 A JP17427087 A JP 17427087A JP S6418236 A JPS6418236 A JP S6418236A
Authority
JP
Japan
Prior art keywords
static electricity
alternating
impressed
current high
chuck electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62174270A
Other languages
Japanese (ja)
Inventor
Yoshiaki Yanagi
Taketomo Morita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP62174270A priority Critical patent/JPS6418236A/en
Publication of JPS6418236A publication Critical patent/JPS6418236A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To simply remove static electricity from an insulating material or the like arranged inside a high-vacuum chamber of a manufacturing device for a semiconductor by a method wherein an alternating field is impressed on the insulating material which has been electrified by the static electricity. CONSTITUTION:Coating layers 13a, 13b formed on the surface of chuck electrodes 11a, 11b composed of a conductive metal are exposed to a strong electric field and are electrified by static electricity. Therefore, a switching part 15 is actuated by an off signal input by a control device 14; the chuck electrodes 11a, 11b are connected to an alternating-current high-voltage power supply 17; an alternating-current high voltage is impressed on the chuck electrodes 11a, 11b from the alternating-current high-voltage power supply 17; an alternating field is impressed on the coating layers 13a, 13b which are insulating materials. By this setup, it is simple to remove the static electricity from the insulating materials or the like which are arranged inside a high-vacuum chamber of a manufacturing device for a semiconductor.
JP62174270A 1987-07-13 1987-07-13 Removal of static electricity Pending JPS6418236A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62174270A JPS6418236A (en) 1987-07-13 1987-07-13 Removal of static electricity

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62174270A JPS6418236A (en) 1987-07-13 1987-07-13 Removal of static electricity

Publications (1)

Publication Number Publication Date
JPS6418236A true JPS6418236A (en) 1989-01-23

Family

ID=15975717

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62174270A Pending JPS6418236A (en) 1987-07-13 1987-07-13 Removal of static electricity

Country Status (1)

Country Link
JP (1) JPS6418236A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5491603A (en) * 1994-04-28 1996-02-13 Applied Materials, Inc. Method of determining a dechucking voltage which nullifies a residual electrostatic force between an electrostatic chuck and a wafer
US5583737A (en) * 1992-12-02 1996-12-10 Applied Materials, Inc. Electrostatic chuck usable in high density plasma
US5684669A (en) * 1995-06-07 1997-11-04 Applied Materials, Inc. Method for dechucking a workpiece from an electrostatic chuck
US5825607A (en) * 1996-05-08 1998-10-20 Applied Materials, Inc. Insulated wafer spacing mask for a substrate support chuck and method of fabricating same
JPH11106916A (en) * 1997-10-01 1999-04-20 Anelva Corp Plasma treating device
JP2006337026A (en) * 2005-05-31 2006-12-14 Hitachi High-Technologies Corp Liquid feed substrate and analysis system

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6244332A (en) * 1985-08-23 1987-02-26 Canon Inc Electro-static absorber

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6244332A (en) * 1985-08-23 1987-02-26 Canon Inc Electro-static absorber

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5583737A (en) * 1992-12-02 1996-12-10 Applied Materials, Inc. Electrostatic chuck usable in high density plasma
US5874361A (en) * 1992-12-02 1999-02-23 Applied Materials, Inc. Method of processing a wafer within a reaction chamber
US5491603A (en) * 1994-04-28 1996-02-13 Applied Materials, Inc. Method of determining a dechucking voltage which nullifies a residual electrostatic force between an electrostatic chuck and a wafer
US5684669A (en) * 1995-06-07 1997-11-04 Applied Materials, Inc. Method for dechucking a workpiece from an electrostatic chuck
US5825607A (en) * 1996-05-08 1998-10-20 Applied Materials, Inc. Insulated wafer spacing mask for a substrate support chuck and method of fabricating same
JPH11106916A (en) * 1997-10-01 1999-04-20 Anelva Corp Plasma treating device
JP2006337026A (en) * 2005-05-31 2006-12-14 Hitachi High-Technologies Corp Liquid feed substrate and analysis system

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