JPS5538946A - Sputtering apparatus - Google Patents

Sputtering apparatus

Info

Publication number
JPS5538946A
JPS5538946A JP11125878A JP11125878A JPS5538946A JP S5538946 A JPS5538946 A JP S5538946A JP 11125878 A JP11125878 A JP 11125878A JP 11125878 A JP11125878 A JP 11125878A JP S5538946 A JPS5538946 A JP S5538946A
Authority
JP
Japan
Prior art keywords
workpiece
electrode
bias
cathode
self
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11125878A
Other languages
Japanese (ja)
Inventor
Koichi Kobayashi
Tetsuya Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11125878A priority Critical patent/JPS5538946A/en
Publication of JPS5538946A publication Critical patent/JPS5538946A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To provide a sputtering apparatus which shows a large accumulating rate without causing defect on the workpiece, by arranging an intermediate electrode insulated electrically between the cathode and the anode. CONSTITUTION:An intermediate disc-shaped electrode 9 made of Al is arranged between the cathode 2 and the anode 3 contained in a belljar l, and a workpiece 5 is attached to the under surface of the electrode 9. The electrode 9 arranged at such a position apart from the cathode 2 that a required self-bias is given to the electorde 9, and is supported by a supporting means in the belljar 1 so that it is insulated electrically. When the self-bias is set at a value, use of this apparatus allows to apply high frequency electric power by a power supply 7 larger than that applied by conventional apparatuses, consequently, the accumulating rate of the material particles of target 4 on the workpiece 5 is increased. When the accumulating rate is set at the same value, the self-bias is decreased compared with that of conventional apparatuses, reducing the formation of defect on the workpiece.
JP11125878A 1978-09-12 1978-09-12 Sputtering apparatus Pending JPS5538946A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11125878A JPS5538946A (en) 1978-09-12 1978-09-12 Sputtering apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11125878A JPS5538946A (en) 1978-09-12 1978-09-12 Sputtering apparatus

Publications (1)

Publication Number Publication Date
JPS5538946A true JPS5538946A (en) 1980-03-18

Family

ID=14556625

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11125878A Pending JPS5538946A (en) 1978-09-12 1978-09-12 Sputtering apparatus

Country Status (1)

Country Link
JP (1) JPS5538946A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6411971A (en) * 1987-07-03 1989-01-17 Seiko Epson Corp High frequency bias sputtering device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6411971A (en) * 1987-07-03 1989-01-17 Seiko Epson Corp High frequency bias sputtering device

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