JPS6415928A - Dry etching method - Google Patents

Dry etching method

Info

Publication number
JPS6415928A
JPS6415928A JP17096387A JP17096387A JPS6415928A JP S6415928 A JPS6415928 A JP S6415928A JP 17096387 A JP17096387 A JP 17096387A JP 17096387 A JP17096387 A JP 17096387A JP S6415928 A JPS6415928 A JP S6415928A
Authority
JP
Japan
Prior art keywords
silicon
gas
etchant
reaction product
foundation material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17096387A
Other languages
Japanese (ja)
Inventor
Ryoji Fukuyama
Norio Nakazato
Makoto Nawata
Yutaka Kakehi
Takeshi Harada
Katsuyoshi Kudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP17096387A priority Critical patent/JPS6415928A/en
Publication of JPS6415928A publication Critical patent/JPS6415928A/en
Pending legal-status Critical Current

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  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To conduct etching at high speed by first gas species, to increase the concentration of a reaction product component on the surface of a foundation material by second gas species, to decrease an etching rate and to obtain a high selection ratio by using the mixed gas of the first gas species containing the etchant of a film and the second gas species including a gas having the same component as the reaction product of the foundation material and the etchant. CONSTITUTION:An silicon nitride film or the laminated film of silicon oxide and silicon niride is used as a material to be etched, single crystal silicon, polycrystalline silicon or amorphous silicon is employed as a foundation material, carbon fluoride, solfur hexafluoride, nitrogen trifluoride, chlorinated carbon fluoride or hydrogenated carbon fluoride is used as the etchant of a film, and silicon tetrafluoride is employed as a gas having the same component as the reaction product of the etchant and the foundation material. A gas having the same component as the reaction product of silicon as the foundation material and the etchant is mixed with the etching gas of the silicon oxide film and used, thus mainly inhibiting only the reaction of silicon, then allowing etching at high speed at a high selection ratio.
JP17096387A 1987-07-10 1987-07-10 Dry etching method Pending JPS6415928A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17096387A JPS6415928A (en) 1987-07-10 1987-07-10 Dry etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17096387A JPS6415928A (en) 1987-07-10 1987-07-10 Dry etching method

Publications (1)

Publication Number Publication Date
JPS6415928A true JPS6415928A (en) 1989-01-19

Family

ID=15914618

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17096387A Pending JPS6415928A (en) 1987-07-10 1987-07-10 Dry etching method

Country Status (1)

Country Link
JP (1) JPS6415928A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02119134A (en) * 1988-07-29 1990-05-07 Mitsubishi Electric Corp Treatment method for silicon surface
US6171974B1 (en) 1991-06-27 2001-01-09 Applied Materials, Inc. High selectivity oxide etch process for integrated circuit structures
US6194325B1 (en) 1992-09-08 2001-02-27 Applied Materials Inc. Oxide etch process with high selectivity to nitride suitable for use on surfaces of uneven topography
US6251792B1 (en) 1990-07-31 2001-06-26 Applied Materials, Inc. Plasma etch processes
US6401652B1 (en) 2000-05-04 2002-06-11 Applied Materials, Inc. Plasma reactor inductive coil antenna with flat surface facing the plasma
US6440866B1 (en) 1991-06-27 2002-08-27 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
US6444085B1 (en) 1991-06-27 2002-09-03 Applied Materials Inc. Inductively coupled RF plasma reactor having an antenna adjacent a window electrode
US6488807B1 (en) 1991-06-27 2002-12-03 Applied Materials, Inc. Magnetic confinement in a plasma reactor having an RF bias electrode
US6518195B1 (en) 1991-06-27 2003-02-11 Applied Materials, Inc. Plasma reactor using inductive RF coupling, and processes

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02119134A (en) * 1988-07-29 1990-05-07 Mitsubishi Electric Corp Treatment method for silicon surface
US6251792B1 (en) 1990-07-31 2001-06-26 Applied Materials, Inc. Plasma etch processes
US6171974B1 (en) 1991-06-27 2001-01-09 Applied Materials, Inc. High selectivity oxide etch process for integrated circuit structures
US6399514B1 (en) 1991-06-27 2002-06-04 Applied Materials, Inc. High temperature silicon surface providing high selectivity in an oxide etch process
US6440866B1 (en) 1991-06-27 2002-08-27 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
US6444085B1 (en) 1991-06-27 2002-09-03 Applied Materials Inc. Inductively coupled RF plasma reactor having an antenna adjacent a window electrode
US6488807B1 (en) 1991-06-27 2002-12-03 Applied Materials, Inc. Magnetic confinement in a plasma reactor having an RF bias electrode
US6518195B1 (en) 1991-06-27 2003-02-11 Applied Materials, Inc. Plasma reactor using inductive RF coupling, and processes
US6194325B1 (en) 1992-09-08 2001-02-27 Applied Materials Inc. Oxide etch process with high selectivity to nitride suitable for use on surfaces of uneven topography
US6401652B1 (en) 2000-05-04 2002-06-11 Applied Materials, Inc. Plasma reactor inductive coil antenna with flat surface facing the plasma

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