JPS6415928A - Dry etching method - Google Patents
Dry etching methodInfo
- Publication number
- JPS6415928A JPS6415928A JP17096387A JP17096387A JPS6415928A JP S6415928 A JPS6415928 A JP S6415928A JP 17096387 A JP17096387 A JP 17096387A JP 17096387 A JP17096387 A JP 17096387A JP S6415928 A JPS6415928 A JP S6415928A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- gas
- etchant
- reaction product
- foundation material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To conduct etching at high speed by first gas species, to increase the concentration of a reaction product component on the surface of a foundation material by second gas species, to decrease an etching rate and to obtain a high selection ratio by using the mixed gas of the first gas species containing the etchant of a film and the second gas species including a gas having the same component as the reaction product of the foundation material and the etchant. CONSTITUTION:An silicon nitride film or the laminated film of silicon oxide and silicon niride is used as a material to be etched, single crystal silicon, polycrystalline silicon or amorphous silicon is employed as a foundation material, carbon fluoride, solfur hexafluoride, nitrogen trifluoride, chlorinated carbon fluoride or hydrogenated carbon fluoride is used as the etchant of a film, and silicon tetrafluoride is employed as a gas having the same component as the reaction product of the etchant and the foundation material. A gas having the same component as the reaction product of silicon as the foundation material and the etchant is mixed with the etching gas of the silicon oxide film and used, thus mainly inhibiting only the reaction of silicon, then allowing etching at high speed at a high selection ratio.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17096387A JPS6415928A (en) | 1987-07-10 | 1987-07-10 | Dry etching method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17096387A JPS6415928A (en) | 1987-07-10 | 1987-07-10 | Dry etching method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6415928A true JPS6415928A (en) | 1989-01-19 |
Family
ID=15914618
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17096387A Pending JPS6415928A (en) | 1987-07-10 | 1987-07-10 | Dry etching method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6415928A (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02119134A (en) * | 1988-07-29 | 1990-05-07 | Mitsubishi Electric Corp | Treatment method for silicon surface |
US6171974B1 (en) | 1991-06-27 | 2001-01-09 | Applied Materials, Inc. | High selectivity oxide etch process for integrated circuit structures |
US6194325B1 (en) | 1992-09-08 | 2001-02-27 | Applied Materials Inc. | Oxide etch process with high selectivity to nitride suitable for use on surfaces of uneven topography |
US6251792B1 (en) | 1990-07-31 | 2001-06-26 | Applied Materials, Inc. | Plasma etch processes |
US6401652B1 (en) | 2000-05-04 | 2002-06-11 | Applied Materials, Inc. | Plasma reactor inductive coil antenna with flat surface facing the plasma |
US6440866B1 (en) | 1991-06-27 | 2002-08-27 | Applied Materials, Inc. | Plasma reactor with heated source of a polymer-hardening precursor material |
US6444085B1 (en) | 1991-06-27 | 2002-09-03 | Applied Materials Inc. | Inductively coupled RF plasma reactor having an antenna adjacent a window electrode |
US6488807B1 (en) | 1991-06-27 | 2002-12-03 | Applied Materials, Inc. | Magnetic confinement in a plasma reactor having an RF bias electrode |
US6518195B1 (en) | 1991-06-27 | 2003-02-11 | Applied Materials, Inc. | Plasma reactor using inductive RF coupling, and processes |
-
1987
- 1987-07-10 JP JP17096387A patent/JPS6415928A/en active Pending
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02119134A (en) * | 1988-07-29 | 1990-05-07 | Mitsubishi Electric Corp | Treatment method for silicon surface |
US6251792B1 (en) | 1990-07-31 | 2001-06-26 | Applied Materials, Inc. | Plasma etch processes |
US6171974B1 (en) | 1991-06-27 | 2001-01-09 | Applied Materials, Inc. | High selectivity oxide etch process for integrated circuit structures |
US6399514B1 (en) | 1991-06-27 | 2002-06-04 | Applied Materials, Inc. | High temperature silicon surface providing high selectivity in an oxide etch process |
US6440866B1 (en) | 1991-06-27 | 2002-08-27 | Applied Materials, Inc. | Plasma reactor with heated source of a polymer-hardening precursor material |
US6444085B1 (en) | 1991-06-27 | 2002-09-03 | Applied Materials Inc. | Inductively coupled RF plasma reactor having an antenna adjacent a window electrode |
US6488807B1 (en) | 1991-06-27 | 2002-12-03 | Applied Materials, Inc. | Magnetic confinement in a plasma reactor having an RF bias electrode |
US6518195B1 (en) | 1991-06-27 | 2003-02-11 | Applied Materials, Inc. | Plasma reactor using inductive RF coupling, and processes |
US6194325B1 (en) | 1992-09-08 | 2001-02-27 | Applied Materials Inc. | Oxide etch process with high selectivity to nitride suitable for use on surfaces of uneven topography |
US6401652B1 (en) | 2000-05-04 | 2002-06-11 | Applied Materials, Inc. | Plasma reactor inductive coil antenna with flat surface facing the plasma |
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