JPS6414953A - Mis type semiconductor memory device - Google Patents

Mis type semiconductor memory device

Info

Publication number
JPS6414953A
JPS6414953A JP62171497A JP17149787A JPS6414953A JP S6414953 A JPS6414953 A JP S6414953A JP 62171497 A JP62171497 A JP 62171497A JP 17149787 A JP17149787 A JP 17149787A JP S6414953 A JPS6414953 A JP S6414953A
Authority
JP
Japan
Prior art keywords
groove
transistor
substrate
memory cell
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62171497A
Other languages
Japanese (ja)
Inventor
Fumihiro Okabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62171497A priority Critical patent/JPS6414953A/en
Publication of JPS6414953A publication Critical patent/JPS6414953A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/39—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench
    • H10B12/395—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench the transistor being vertical

Landscapes

  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To reduce the substrate occupying area of memory cell by forming a transfer gate transistor of memory cell with the gate electrode formed cylindrically at the side wall surface within the vertical groove of substrate and the capacitance part integrally with the transistor in the same groove with the transfer gate transistor or other groove cascade connected thereto. CONSTITUTION:A MIS type semiconductor memory device comprises a P-type silicon substrate 1, a belt type active element region 3 and a vertical type one transistor memory cell consisting of transfer gate transistor having the groove capacitance part formed by stacking dielectric material film 12 and n-type impurity diffused layer 14 to the side wall surface of lower stage groove of groove having wide opening bored within a silicon substrate just under the active element region 3, drain regions 6a, 6b, 6c... and common source region 5, gate insulation film 8 and gate electrodes 7'a, 7'b, 7'c.... The gate electrodes 7'a, 7'b, 7'c, ... are connected with word lines 7a, 7b, 7c,... on the substrate and the inside of groove having wide opening is filled with polysilicon film 10 to become the capacitance part electrode.
JP62171497A 1987-07-08 1987-07-08 Mis type semiconductor memory device Pending JPS6414953A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62171497A JPS6414953A (en) 1987-07-08 1987-07-08 Mis type semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62171497A JPS6414953A (en) 1987-07-08 1987-07-08 Mis type semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS6414953A true JPS6414953A (en) 1989-01-19

Family

ID=15924196

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62171497A Pending JPS6414953A (en) 1987-07-08 1987-07-08 Mis type semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS6414953A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009047230A (en) * 2007-08-20 2009-03-05 Aisin Aw Co Ltd Transmission case

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009047230A (en) * 2007-08-20 2009-03-05 Aisin Aw Co Ltd Transmission case

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