JPS6413770A - Mos type transistor - Google Patents
Mos type transistorInfo
- Publication number
- JPS6413770A JPS6413770A JP17036787A JP17036787A JPS6413770A JP S6413770 A JPS6413770 A JP S6413770A JP 17036787 A JP17036787 A JP 17036787A JP 17036787 A JP17036787 A JP 17036787A JP S6413770 A JPS6413770 A JP S6413770A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- semiconductor
- type transistor
- oxide film
- mos type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To obtain a MOS type transistor having excellent switching characteris tics by giving high mobility by forming a second semiconductor layer having a band gap equal to or wider than that of a first semiconductor layer on the interface between the first semiconductor layer and a thermal oxide film. CONSTITUTION:A second semiconductor layer 12 different from a semiconductor substrate is shaped between the semiconductor substrate and a gate oxide film in a MOS type transistor, and a gate oxide film 13 and a gate electrode 14 are formed onto the semiconductor layer 12 in succession. A material having a band gap equal to or larger than that of a first semiconductor layer 11 is used by reason of the increase of the lifetime of inversion layer carrier as the semiconductor layer 12. SiC (a P type), SiN (an N type, where it means a semiconductor such as SiN:H, not an insulator such as Si3N4), etc., can be employed as a concrete material. It is preferable that the film thickness of the semiconductor layer 12 is kept within the range of 100-5000Angstrom in order to ensure an effective electric field for shaping an inversion layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17036787A JPS6413770A (en) | 1987-07-07 | 1987-07-07 | Mos type transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17036787A JPS6413770A (en) | 1987-07-07 | 1987-07-07 | Mos type transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6413770A true JPS6413770A (en) | 1989-01-18 |
Family
ID=15903621
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17036787A Pending JPS6413770A (en) | 1987-07-07 | 1987-07-07 | Mos type transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6413770A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5597153A (en) * | 1993-02-22 | 1997-01-28 | Canon Kabushiki Kaisha | Automatic original feed apparatus |
US9581518B2 (en) | 2014-03-26 | 2017-02-28 | Nagano Keiki Co., Ltd. | Physical quantity measuring device |
-
1987
- 1987-07-07 JP JP17036787A patent/JPS6413770A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5597153A (en) * | 1993-02-22 | 1997-01-28 | Canon Kabushiki Kaisha | Automatic original feed apparatus |
US9581518B2 (en) | 2014-03-26 | 2017-02-28 | Nagano Keiki Co., Ltd. | Physical quantity measuring device |
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