JPS63914B2 - - Google Patents
Info
- Publication number
- JPS63914B2 JPS63914B2 JP59033250A JP3325084A JPS63914B2 JP S63914 B2 JPS63914 B2 JP S63914B2 JP 59033250 A JP59033250 A JP 59033250A JP 3325084 A JP3325084 A JP 3325084A JP S63914 B2 JPS63914 B2 JP S63914B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- thin film
- light
- transparent conductor
- transparent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 claims description 22
- 239000004020 conductor Substances 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 9
- 239000002131 composite material Substances 0.000 claims description 4
- 238000005566 electron beam evaporation Methods 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 238000005401 electroluminescence Methods 0.000 description 25
- 239000000463 material Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- 229910004813 CaTe Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 2
- 239000011149 active material Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 239000008188 pellet Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
Landscapes
- Surface Treatment Of Glass (AREA)
Description
【発明の詳細な説明】
本発明はEL（Electro Luminescence）発光を
呈する薄膜EL素子とその製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a thin film EL element that emits EL (Electro Luminescence) light and a method for manufacturing the same.
従来、この薄膜EL素子としては、第１図ａ，
ｂ及びｃに示ような構造のものが知られていた。 Conventionally, this thin film EL element is shown in Fig. 1a,
Structures shown in b and c were known.
先ず、第１図ａは、ガラス基板１上に、In2
O3、Sn O2等の透明電極２と、Y2 O3、Ti O2等
からなる第１の絶縁層３を順次、スパツタリング
法又は電子ビーム蒸着法により重畳形成し、この
第１の絶縁層３上にはZnS：Mn焼結ペレツトを
電子ビーム蒸着するとにより発光層４を積層す
る。この時ZnS蒸着材料に添加するMnの濃度は
目的により異なるが、通常0.1〜2.0wt％に設定さ
れる。この発光層４上には第１の絶縁層３と同様
の材質からなる第２の絶縁層５を積層し、この上
にはAl等からなる背面電極６を蒸着形成する。
そして、透明電極２と背面電極６に交流又は直流
電源を接続して、この薄膜EL素子を駆動して、
横橙色の発光を呈する。 First, in FIG. 1a, In 2 is placed on a glass substrate 1.
A transparent electrode 2 made of O 3 , Sn O 2 , etc. and a first insulating layer 3 made of Y 2 O 3 , Ti O 2 , etc. are sequentially formed in an overlapping manner by sputtering or electron beam evaporation, and this first insulating layer A light emitting layer 4 is laminated on the layer 3 by electron beam evaporation of ZnS:Mn sintered pellets. At this time, the concentration of Mn added to the ZnS vapor deposition material varies depending on the purpose, but is usually set to 0.1 to 2.0 wt%. A second insulating layer 5 made of the same material as the first insulating layer 3 is laminated on the light emitting layer 4, and a back electrode 6 made of Al or the like is formed by vapor deposition thereon.
Then, an AC or DC power source is connected to the transparent electrode 2 and the back electrode 6 to drive this thin film EL element.
It emits horizontal orange light.
このような構造の薄膜EL素子は、その発光特
性、寿命の面では実用化に迫る特性を備えている
にもかゝわらず、第２の絶縁層５と背面電極６と
の間の光反射係数が大きく、外部から入射した光
の50％以上をも反射することから、明るい場所で
表示させる場合には、コンテストが低下する欠点
があつた。このような欠点を除去するために、第
１図ｂ及びｃに示すような構造の薄膜EL素子が
提案されている。 Although the thin film EL element with such a structure has characteristics approaching practical use in terms of its light emitting characteristics and lifespan, it suffers from light reflection between the second insulating layer 5 and the back electrode 6. Since the coefficient is large and more than 50% of the light incident from the outside is reflected, it has the disadvantage that the display quality deteriorates when displayed in a bright place. In order to eliminate these drawbacks, a thin film EL device having a structure as shown in FIGS. 1b and 1c has been proposed.
先ず、第１図ｂは同図ａに示した発光層４と第
２の絶縁層５との間にCaTe等の高抵抗光吸収体
層７を挿入することにより、EL素子のコントラ
ストを高くしている。しかし、このEL素子は、
発光特性において同図ａに示したEL素子と対比
して大きく変わつてしまい、輝度が低下する欠点
があり、高電界を加えたときには絶縁破壊しやす
い欠点もあつた。 First, FIG. 1b shows that the contrast of the EL element is increased by inserting a high-resistance light absorber layer 7 such as CaTe between the light-emitting layer 4 and the second insulating layer 5 shown in FIG. 1a. ing. However, this EL element
The light emitting characteristics were significantly different from those of the EL element shown in Figure A, and the device had the disadvantage of reduced brightness, as well as the disadvantage of being prone to dielectric breakdown when a high electric field was applied.
次に、第１図ｃは同図ａに示した第２の絶縁層
５と背面電極６との間にCaTe等の高抵抗光吸収
体層８を挿入することにより、同図ｂに示したも
のと同様、EL素子のコントラストを高くしてい
るが、発光開始電圧が高くなつてしまうという致
命的欠点があり、また同図ｃのものと同様、高電
界を加えたときには絶縁破壊しやすい欠点もあつ
た。 Next, as shown in FIG. 1c, a high-resistance light absorber layer 8 such as CaTe is inserted between the second insulating layer 5 and the back electrode 6 shown in FIG. Like the EL element, the contrast of the EL element is increased, but it has the fatal drawback of increasing the emission starting voltage.Also, like the EL element shown in Figure c, it is prone to dielectric breakdown when a high electric field is applied. It was hot too.
本発明は、上記のような従来の欠点を除去する
ためになされたものであり、薄膜EL素子の背面
電極が透明導電体層と金属層とを積層した複合層
から成り、かつ前記透明導電体層と前記金属層と
の界面が粗面であることを主構成とすることによ
り、発光輝度特性を変えることなく、発光時のコ
ントラストを高くした薄膜EL素子を提供するこ
とを目的としている。 The present invention has been made to eliminate the above-mentioned conventional drawbacks, and the back electrode of a thin film EL element is made of a composite layer in which a transparent conductor layer and a metal layer are laminated, and the transparent conductor The object of the present invention is to provide a thin film EL element that has a main structure in which the interface between the metal layer and the metal layer has a rough surface, thereby increasing the contrast during light emission without changing the luminance characteristics.
以下、本発明の実施例図面を参照しながら、本
発明を詳細に説明する。 DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail below with reference to drawings showing examples of the present invention.
第２図ａは本発明の一実施例を示し、先ず石英
ガラス基板１上に酸化インジウムスズ（以下、
「ITO」という。）の透明電極２（膜厚：2000Å）
を直流マグネトロン・スパツタリング法（基板温
度Ts＝200℃、スパツタ電流密度Ｉ＝1.5mA／
cm2、O2ガス分圧Ｐ O2＝２×10-4Torr、Arガス
分圧PAr＝８×10-4Torr）により成膜する。その
際、透明電極２の表面を平滑面状に形成するため
に、スパツタリング法が適している。真空蒸着法
によれば、その表面に突起部が発生しがちであ
り、その突起部に電界が集中して、絶縁破壊を起
こしやすくなる。次に、Y2 O3の第１の絶縁層３
（膜厚：3000Å）を反応性蒸着法（Ts＝300℃、
Ｐ O2＝１×10-4Torr）により蒸着し、次にMn
を0.5wt％添加したZns：Mn焼結ペレツトを素材
にして真空蒸着法（Ts＝200℃）により発光層４
（膜厚：5000Å）を蒸着し、次に、第１の絶縁層
３と同様に第２の絶縁層５（膜厚：3000Å）を蒸
着する。そして、この第２の絶縁層５上にSn O2
の透明導電体層９を反応性電子ビーム蒸着法
（Ts＝300℃、Ｐ O2＝１×10-4Torr）により、
その表面を粗面にして蒸着し、更に、この透明導
電体層９上にCrから成る金属層１０を真空蒸着
法により蒸着して、透明導電体層９と金属層１０
とから成る複合層を本発明の背面電極（９＋10）
として使用し、本発明の薄膜EL素子を製作した。
本例の薄膜EL素子は、透明電極２と背面電極
（９＋10）との間に交流電源を接続して駆動し、
横橙色を発光する。 FIG. 2a shows an embodiment of the present invention. First, indium tin oxide (hereinafter referred to as
It's called "ITO". ) transparent electrode 2 (thickness: 2000Å)
DC magnetron sputtering method (substrate temperature Ts = 200℃, sputtering current density I = 1.5mA/
cm 2 , O 2 gas partial pressure P O 2 =2×10 −4 Torr, Ar gas partial pressure P Ar =8×10 −4 Torr). At this time, sputtering is suitable for forming the surface of the transparent electrode 2 into a smooth surface. According to the vacuum evaporation method, protrusions tend to occur on the surface, and the electric field is concentrated on the protrusions, making it easy to cause dielectric breakdown. Next, a first insulating layer 3 of Y 2 O 3
(film thickness: 3000Å) using reactive vapor deposition method (Ts=300℃,
P O 2 =1×10 -4 Torr), then Mn
The light-emitting layer 4 was formed using a vacuum evaporation method (Ts = 200℃) using Zns:Mn sintered pellets containing 0.5wt% of
(thickness: 5000 Å), and then, similarly to the first insulating layer 3, a second insulating layer 5 (thickness: 3000 Å) is deposited. Then, SnO 2 is deposited on this second insulating layer 5.
The transparent conductor layer 9 of
A metal layer 10 made of Cr is further deposited on the transparent conductor layer 9 by a vacuum evaporation method, so that the transparent conductor layer 9 and the metal layer 10 are
The composite layer consisting of the back electrode (9+10) of the present invention
The thin film EL device of the present invention was manufactured using the same method.
The thin film EL element of this example is driven by connecting an AC power source between the transparent electrode 2 and the back electrode (9+10),
Emit horizontal orange light.
本例の薄膜EL素子の印加電圧に対する発光輝
度特性は第３図の曲線ｄで現わされる。なお同図
の曲線ａ，ｂ及びｃはそれぞれ第１図ａ，ｂ及び
ｃに示した薄膜EL素子の特性を現わす。第３図
によれば、本例の薄膜EL素子の発光輝度は、コ
ントラスト対策を講じていない第１図ａのものと
対比して、それを講じた第１図ｂ及びｃのものが
約１／２に低下していると同様に、低下すること
は免れないが、２つの対向した透明電極２と透明
導電体層９を介して電界が印加されていることか
ら、発光特性、発光開始電圧、絶縁破壊及び寿命
等について、第１図ａのものとほとんど変わらな
い諸特性が得られる。 The luminance characteristic of the thin film EL element of this example with respect to applied voltage is expressed by curve d in FIG. Note that curves a, b, and c in the figure represent the characteristics of the thin film EL element shown in FIG. 1 a, b, and c, respectively. According to FIG. 3, the luminance of the thin film EL device of this example is approximately 1 /2, it is inevitable that the reduction will occur, but since an electric field is applied through the two opposing transparent electrodes 2 and the transparent conductor layer 9, the luminescence characteristics and luminescence starting voltage will decrease. , dielectric breakdown, lifespan, etc., are obtained that are almost the same as those shown in FIG. 1a.
また、上記積層法のうち、透明導電体層９の反
応性電子ビーム蒸着法において、その表面を粗面
化する手段としては、Ts、Ｐ O2及び蒸着速度
Vvの蒸着条件のうち少なくとも一つを制御して
行なわれ、本例ではTs＝300℃、Ｐ O2＝１×
10-4TorrのもとでVv＝０〜７Å／secとした。な
お、電子ビームの電流密度及びその電流について
はそれぞれ15〜25mA／cm2及び30〜50mAに選定
した。 Among the above lamination methods, in the reactive electron beam evaporation method of the transparent conductor layer 9, the means for roughening the surface include Ts, P O 2 and the evaporation rate.
This is carried out by controlling at least one of the Vv vapor deposition conditions, and in this example, Ts = 300°C, P O 2 = 1 ×
Vv was set at 0 to 7 Å/sec under 10 -4 Torr. Note that the current density of the electron beam and its current were selected to be 15 to 25 mA/cm 2 and 30 to 50 mA, respectively.
このような透明導電体層９の粗面化した表面の
厚さ方向の層、すなわち透明導電体層９と金属層
１０が交互に入り込んだ不均質層１１に注目すれ
ば、この不均質層１１の屈折率が透明導電体層９
と金属層１０における各屈折率の中間的な値とな
り、この不均質層１１が透明基板１側から背面電
極（９＋10）への入射光に対する反射防止層とし
て作用することから、第２の絶縁層５と背面電極
（９＋10）との間における光反射係数が小さくな
つて、EL素子のコントラストを高くすることが
できる。このようなコントラストの効果は、分光
反射率特性で証明され、本例の薄膜EL素子は第
４図の曲線ｆで示すように、可視光域におい反射
率を約10％にまで低くすることができる。なお、
同図の曲線ｅは第１図ａのものによる分光反射率
特性であり、その反射率は可視光域において約50
〜60％もあつた。 If we pay attention to the layers in the thickness direction of the roughened surface of the transparent conductor layer 9, that is, the heterogeneous layer 11 in which the transparent conductor layer 9 and the metal layer 10 are alternately inserted, this heterogeneous layer 11 The transparent conductor layer 9 has a refractive index of
and the respective refractive indexes of the metal layer 10 are intermediate values, and since this heterogeneous layer 11 acts as an antireflection layer for light incident on the back electrode (9+10) from the transparent substrate 1 side, the second insulating layer The light reflection coefficient between 5 and the back electrode (9+10) is reduced, making it possible to increase the contrast of the EL element. This contrast effect is proven by the spectral reflectance characteristics, and the thin film EL device of this example can reduce the reflectance to about 10% in the visible light range, as shown by curve f in Figure 4. can. In addition,
Curve e in the same figure is the spectral reflectance characteristic based on that in Figure 1 a, and its reflectance is approximately 50 in the visible light range.
It was ~60% hot.
第２図ｂは本発明の他の実施例であり、本例で
は同図ａの前実施例と対比して、第１の絶縁層３
を除去して、透明電極２と発光層４とを互に隣接
している。本例では、前述した第３図の発光輝度
特性において、曲線ｄのうち、発光開始電圧を一
層低くした特性を得、第４図の分光反射率特性に
おいて、曲線ｆとほとんど同様な特性を得た。 FIG. 2b shows another embodiment of the present invention, in which the first insulating layer 3 is different from the previous embodiment shown in FIG. 2a.
is removed to make the transparent electrode 2 and the light emitting layer 4 adjacent to each other. In this example, in the luminance characteristics shown in FIG. 3 mentioned above, a characteristic with a lower emission starting voltage is obtained from the curve d, and in the spectral reflectance characteristics shown in FIG. 4, a characteristic almost the same as that of the curve f is obtained. Ta.
本発明の以上の実施例の他に、先ず、透明基板
については石英ガラスに代えて、ソーダライムガ
ラス、アルミノボロシリケートガラス等の多成分
系のガラス基板でもよく、透明電極については
ITOに代えて、ln2 O3若しくはこれにＷを添加し
たもの又はSn O2にSb、Ｆ等を添加したものであ
つてもよい。次に、絶縁層については、Y2 O3に
代えてTa2、O5、TiO2、Al2、O3、Si3、N4又は
SiO2等を使用してもよい。次に、発光層につい
ては、母材としてZnSの代わりに、ZnSe又はこ
れら混合物等を使用してもよく、これらの母材に
対して活性材としてMn、Cu、Al、希土類、ハロ
ゲン等が添加される。例えば、ZnS：Cu、Alで
は黄緑色、Zn（Ｓ・Se）：Cu、Brでは緑色、母材
ZnSに対して活性材としてSmは赤色、Tbは緑
色、Tmは青色を発光する。また、この発光層は
中間層として透明導電体層（Y2 O3、Ta2 O5、
TiO2、Al2 O3、Si3 N4又は、Si O2等）を介在
して第１及び第２の発光層に分けてもよく、その
場合に第１及び第２の発光層は同一材質に選定で
きることは勿論のこと、異種材質、例えば第１の
発光層としてTbF3を添加したZnS薄膜を使用し
た場合、第１の発光層からは緑色を発光し、第２
の発光層としてSmF3を添加したZnS薄膜を使用
した場合、第２の発光層からは赤色を発光して、
全体として緑色と赤色との中間色を発光する薄膜
EL素子が得られる。次に背面電極のうち透明導
電体層についてはITOに代えて前述した透明電極
の材質を使用してもよく、金属層についてはCr
に代えて、反射率がCr使用のときよりも高くな
ることが許容できれば、Ta、Mo、Fe、Ni、
NiCr等の金属を使用してもよい。 In addition to the above-described embodiments of the present invention, first, the transparent substrate may be replaced with quartz glass, and a multi-component glass substrate such as soda lime glass or aluminoborosilicate glass may be used, and the transparent electrode may be
Instead of ITO, ln 2 O 3 or ln 2 O 3 to which W is added, or Sn O 2 to which Sb, F, etc. are added may be used. Next, for the insulating layer, Ta 2 , O 5 , TiO 2 , Al 2 , O 3 , Si 3 , N 4 or
SiO 2 etc. may also be used. Next, for the light-emitting layer, ZnSe or a mixture thereof may be used instead of ZnS as a base material, and Mn, Cu, Al, rare earth, halogen, etc. may be added as an active material to these base materials. be done. For example, yellow-green for ZnS:Cu, Al, green for Zn(S/Se):Cu, Br, base material
As active materials for ZnS, Sm emits red light, Tb emits green light, and Tm emits blue light. This light-emitting layer also has a transparent conductor layer (Y 2 O 3 , Ta 2 O 5 ,
TiO 2 , Al 2 O 3 , Si 3 N 4 or Si O 2 etc.) may be used to separate the first and second light emitting layers, in which case the first and second light emitting layers are the same. Of course, if a different material is used, for example, a ZnS thin film doped with TbF 3 as the first light emitting layer, the first light emitting layer will emit green light and the second light emitting layer will emit green light.
When a ZnS thin film doped with SmF 3 is used as the light-emitting layer, the second light-emitting layer emits red light,
A thin film that emits a color intermediate between green and red as a whole
An EL element is obtained. Next, for the transparent conductor layer of the back electrode, the material of the transparent electrode described above may be used instead of ITO, and for the metal layer, Cr
If it is acceptable that the reflectance is higher than when using Cr, Ta, Mo, Fe, Ni,
Metals such as NiCr may also be used.
以上のとおり、本発明の薄膜EL素子によれば
発光特性については従来最も良いとされる従来品
（第１図ａ）とほとんど変わらない特性と、高い
コントラスト特性とを両立させることができる。 As described above, the thin film EL device of the present invention can achieve both light emission characteristics that are almost the same as those of the conventional product (FIG. 1a), which is considered to be the best, and high contrast characteristics.
第１図ａ，ｂ及びｃはそれぞれ従来の薄膜EL
素子を示す断面図、第２図ａ及びｂはそれぞれ本
発明による実施例を示す断面図、第３図は印加電
圧に対する発光輝度特性図、並びに第４図は分光
反射率特性図である。
１……透明基板、２……透明電極、３……第１
の絶縁層、４……発光層、５……第２の絶縁層、
９……透明導電体層、１０……金属層、１１……
不均質層。
Figure 1 a, b and c are respectively conventional thin film EL
FIGS. 2A and 2B are sectional views showing an example of the present invention, FIG. 3 is a luminance characteristic diagram with respect to applied voltage, and FIG. 4 is a spectral reflectance characteristic diagram. 1... Transparent substrate, 2... Transparent electrode, 3... First
an insulating layer, 4...a light emitting layer, 5...a second insulating layer,
9...Transparent conductor layer, 10...Metal layer, 11...
Heterogeneous layer.
Claims (1)
た薄膜EL素子において、前記背面電極が透明導
電体層と金属層とを積層した複合層から成り、か
つ前記透明導電体層と前記金属層との界面が粗面
であることを特徴とする薄膜EL素子。 ２ 透明電極と背面電極との間に発光層を介在し
た薄膜EL素子の製造方法において、前記背面電
極が透明導電体層と金属層とを積層した複合層か
ら成り、かつ前記透明導電体層が電子ビーム蒸着
法により温度、酸素分圧及び蒸着速度の蒸着条件
のうち少なくとも一つを制御して、その表面を粗
面に形成していることを特徴とする薄膜EL素子
の製造方法。[Scope of Claims] 1. A thin film EL device in which a light-emitting layer is interposed between a transparent electrode and a back electrode, wherein the back electrode is made of a composite layer of a transparent conductor layer and a metal layer, and the transparent conductor A thin film EL device characterized in that an interface between the body layer and the metal layer is a rough surface. 2. A method for manufacturing a thin film EL device in which a light-emitting layer is interposed between a transparent electrode and a back electrode, wherein the back electrode is composed of a composite layer of a transparent conductor layer and a metal layer, and the transparent conductor layer is 1. A method for manufacturing a thin film EL device, characterized in that the surface thereof is formed into a rough surface by controlling at least one of the deposition conditions of temperature, oxygen partial pressure, and deposition rate using an electron beam evaporation method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59033250A JPS60177600A (en) | 1984-02-23 | 1984-02-23 | Thin film el element and method of producing same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59033250A JPS60177600A (en) | 1984-02-23 | 1984-02-23 | Thin film el element and method of producing same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60177600A JPS60177600A (en) | 1985-09-11 |
| JPS63914B2 true JPS63914B2 (en) | 1988-01-09 |
Family
ID=12381243
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59033250A Granted JPS60177600A (en) | 1984-02-23 | 1984-02-23 | Thin film el element and method of producing same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60177600A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04100944U (en) * | 1991-02-08 | 1992-09-01 | 関東自動車工業株式会社 | Assembly structure of automobile front window and cowl louver |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2881212B2 (en) * | 1989-10-27 | 1999-04-12 | 株式会社リコー | EL device |
| JPH0645291U (en) * | 1992-11-27 | 1994-06-14 | 日本精機株式会社 | EL element |
| US5620348A (en) * | 1995-05-12 | 1997-04-15 | Timex Corporation | Method of manufacturing electroluminescent lamps having surface designs and lamps produced thereby |
-
1984
- 1984-02-23 JP JP59033250A patent/JPS60177600A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04100944U (en) * | 1991-02-08 | 1992-09-01 | 関東自動車工業株式会社 | Assembly structure of automobile front window and cowl louver |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60177600A (en) | 1985-09-11 |
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