JPS6389414A - Production of chloropolysilane - Google Patents
Production of chloropolysilaneInfo
- Publication number
- JPS6389414A JPS6389414A JP23449186A JP23449186A JPS6389414A JP S6389414 A JPS6389414 A JP S6389414A JP 23449186 A JP23449186 A JP 23449186A JP 23449186 A JP23449186 A JP 23449186A JP S6389414 A JPS6389414 A JP S6389414A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- chloride
- chloropolysilane
- molten salt
- chlorine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 22
- 239000010703 silicon Substances 0.000 claims abstract description 22
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 claims abstract description 22
- 235000002639 sodium chloride Nutrition 0.000 claims abstract description 21
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims abstract description 18
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims abstract description 16
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 12
- 239000000460 chlorine Substances 0.000 claims abstract description 12
- 150000003839 salts Chemical class 0.000 claims abstract description 12
- 239000011592 zinc chloride Substances 0.000 claims abstract description 11
- 235000005074 zinc chloride Nutrition 0.000 claims abstract description 11
- 239000011856 silicon-based particle Substances 0.000 claims abstract description 9
- 239000011780 sodium chloride Substances 0.000 claims abstract description 9
- 239000005046 Chlorosilane Substances 0.000 claims abstract description 8
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 8
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims abstract description 8
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000001103 potassium chloride Substances 0.000 claims abstract description 8
- 235000011164 potassium chloride Nutrition 0.000 claims abstract description 8
- 239000002245 particle Substances 0.000 claims abstract description 6
- 239000003921 oil Substances 0.000 claims abstract description 3
- 239000010702 perfluoropolyether Substances 0.000 claims abstract description 3
- 238000005660 chlorination reaction Methods 0.000 claims description 9
- 239000007788 liquid Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 150000004812 organic fluorine compounds Chemical class 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- 239000006227 byproduct Substances 0.000 abstract description 7
- 239000000428 dust Substances 0.000 abstract description 7
- 239000007787 solid Substances 0.000 abstract description 5
- 229910004151 SinCl2n+2 Inorganic materials 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 2
- TWRXJAOTZQYOKJ-UHFFFAOYSA-L Magnesium chloride Chemical compound [Mg+2].[Cl-].[Cl-] TWRXJAOTZQYOKJ-UHFFFAOYSA-L 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000004817 gas chromatography Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- AWFYPPSBLUWMFQ-UHFFFAOYSA-N 2-[5-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]-1,3,4-oxadiazol-2-yl]-1-(1,4,6,7-tetrahydropyrazolo[4,3-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C1=NN=C(O1)CC(=O)N1CC2=C(CC1)NN=C2 AWFYPPSBLUWMFQ-UHFFFAOYSA-N 0.000 description 1
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 description 1
- 229910000519 Ferrosilicon Inorganic materials 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- MKPXGEVFQSIKGE-UHFFFAOYSA-N [Mg].[Si] Chemical compound [Mg].[Si] MKPXGEVFQSIKGE-UHFFFAOYSA-N 0.000 description 1
- 150000003973 alkyl amines Chemical class 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000001110 calcium chloride Substances 0.000 description 1
- 229910001628 calcium chloride Inorganic materials 0.000 description 1
- OSMSIOKMMFKNIL-UHFFFAOYSA-N calcium;silicon Chemical compound [Ca]=[Si] OSMSIOKMMFKNIL-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910001629 magnesium chloride Inorganic materials 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920000548 poly(silane) polymer Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
Landscapes
- Silicon Compounds (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はシリコンを塩素化してクロロポリシランを製造
する方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a method for producing chloropolysilane by chlorinating silicon.
近年、エレクトロニクス工業の発展に伴い、多結晶シリ
コンあるいはアモルファスシリコン等の半導体用シリコ
ンの需要が急激に増大して居り、クロロポリシランはこ
のような半導体シリコンの製造原料として最近特にその
重要性を増している。In recent years, with the development of the electronics industry, the demand for semiconductor silicon such as polycrystalline silicon or amorphous silicon has increased rapidly, and chloropolysilane has recently become particularly important as a raw material for manufacturing such semiconductor silicon. There is.
クロロポリシランはそのまま熱分解して半導体シリコン
ウェハー上にエピタキシャルシリコンを成長させる事も
勿論出来、また、ゲルマニウムドープ率の高い光通信用
シリカ源としても用いられる。Of course, chloropolysilane can be thermally decomposed as it is to grow epitaxial silicon on a semiconductor silicon wafer, and can also be used as a silica source for optical communications with a high germanium doping rate.
またクロロポリシランはさらに還元して次式(I)で表
わされるポリシランとし、
5lnHzn+z (n≧2) (I
)これを熱分解等して半導体用シリコンエピタキシャル
の原料やアモルファスシリコンの原料として使われてい
る。In addition, chloropolysilane is further reduced to polysilane represented by the following formula (I), and 5lnHzn+z (n≧2) (I
) This is thermally decomposed and used as a raw material for silicon epitaxial semiconductors and amorphous silicon.
例えばジシランSi、H,は、熱分解、グロー放電分解
によりアモルファスシリコン膜を形成する場合、モノシ
ランSiH,に比較して、基板上へ形成される膜の堆積
速度がはるかに大きく、且つ、該膜は電気特性に優れて
いる等の利点があり、太陽電池用半導体の原料として今
後大幅な需要増加が期待されている。For example, when disilane Si, H, is used to form an amorphous silicon film by thermal decomposition or glow discharge decomposition, the deposition rate of the film formed on the substrate is much higher than that of monosilane SiH. It has advantages such as excellent electrical properties, and demand is expected to increase significantly in the future as a raw material for semiconductors for solar cells.
従来クロロポリシランは、カルシウムシリコン、マグネ
シウムシリコン、あるいはフェロシリコン等、金属とシ
リコンとの合金またはシリコンの粒子を加熱して塩素ガ
スを送り込み塩素化反応によって得られている。Conventionally, chloropolysilane has been obtained by heating an alloy of metal and silicon, such as calcium silicon, magnesium silicon, or ferrosilicon, or by a chlorination reaction by feeding chlorine gas into the silicon particles.
従来方法でクロロポリシランを製造する場合、塩化カル
シウム、塩化マグネシウム等の固体の副生物や未反応の
シリコンまたはケイ化物微粒子が粉塵となって生成物(
クロロポリシラン)凝縮液中に混入し、または途中配管
の閉塞の原因となる等、商用製造方法として粉塵の発生
しないかつシリコンと塩素の反応効率の高いクロロポリ
シランの製造方法が望まれている。When producing chloropolysilane using the conventional method, solid by-products such as calcium chloride and magnesium chloride and unreacted silicon or silicide fine particles turn into dust and produce a product (
Chloropolysilane (chloropolysilane) can be mixed into condensate or cause blockage of pipes, etc. As a commercial production method, there is a need for a method for producing chloropolysilane that does not generate dust and has a high reaction efficiency between silicon and chlorine.
〔問題点の解決に係わる着眼点、知見〕本発明者はシリ
コンと塩素または塩化水素との反応による固体の副生物
や粉塵の発生しないクロロポリシランの製造方法を提供
す可く検討した結果、塩素化を塩素、シリコン、クロロ
シランに対して不活性な液体中で行わせる方法を見出し
本発明に到達した。[Points of focus and knowledge related to solving the problem] The present inventor has investigated the possibility of providing a method for producing chloropolysilane that does not generate solid by-products or dust due to the reaction between silicon and chlorine or hydrogen chloride. The present invention was achieved by discovering a method for carrying out the chemical reaction in a liquid that is inert to chlorine, silicon, and chlorosilane.
即ち本発明によれば、シリコン粒子を塩素または塩化水
素、シリコン、クロロシランに対して不活性な液体中で
塩素化を行う事からなるクロロポリシラン(SinCQ
znヤまただしn≧2)の製造方法が提供される。That is, according to the present invention, chloropolysilane (SinCQ) is produced by chlorinating silicon particles in a liquid inert to chlorine or hydrogen chloride, silicon, and chlorosilane.
Provided is a method for manufacturing zn(n≧2).
この方法によれば実質的に固体の副生物が生成されず、
また未反応のシリコンは塩素、塩化水素、クロロシラン
に対して不活性な液体中にとらえられたまま塩素化に供
される為、粉塵の発生が認められない。This method produces virtually no solid by-products;
Further, since unreacted silicon is subjected to chlorination while being captured in a liquid that is inert to chlorine, hydrogen chloride, and chlorosilane, no dust is generated.
本発明における塩素、塩化水素、シリコン、クロロシラ
ンに対して不活性な液体とは、特に限定されないが1例
えば塩化亜鉛と塩化カリウムの溶融塩、塩化亜鉛と塩化
ナトリウムの溶融塩、塩化亜鉛と塩化ナトリウムと塩化
カリウムの溶融塩、ペルフルオロポリエーテル油、ペル
フルオロトリ低級アルキルアミン、等の有機フッ素化合
物が挙げられる。In the present invention, the liquid inert to chlorine, hydrogen chloride, silicon, and chlorosilane is not particularly limited, but includes, for example, a molten salt of zinc chloride and potassium chloride, a molten salt of zinc chloride and sodium chloride, and a molten salt of zinc chloride and sodium chloride. and organic fluorine compounds such as molten salt of potassium chloride, perfluoropolyether oil, perfluorotri-lower alkylamine, and the like.
本発明方法にお、いて使用されるシリコン粒子は可及的
に高純度である方が固体副生物の生成量が少なく、純度
はこのことを考慮して決定される問題であるが97%以
上が望ましい。本発明においてシリコン粒子は平均粒径
2rrn以下が望ましく、塩素化は、140°C以上3
00℃以下で行う事が望ましい。The higher the purity of the silicon particles used in the method of the present invention, the lower the amount of solid by-products produced, and the purity is determined by taking this into account, but is 97% or higher. is desirable. In the present invention, the silicon particles preferably have an average particle diameter of 2rrn or less, and the chlorination is carried out at a temperature of 140°C or higher and 3rrn.
It is desirable to carry out the test at a temperature below 00°C.
シリコン粒子の平均粒径が2mmより大きいと塩素との
接触効率が悪く、実用上不適である。また塩素化の温度
が140℃より低いと反応速度が遅すぎて不適当であり
、300℃を超えるとクロロポリシランの生成率が低下
し、やはり不適当である。尚、クロロポリシランの生成
に伴って5iCQ4が副生するが、蒸溜によって5i2
Cf1. 、 Si、CQ、等を容易に単離する事が出
来る。If the average particle size of the silicon particles is larger than 2 mm, the contact efficiency with chlorine is poor and it is not suitable for practical use. Further, if the chlorination temperature is lower than 140°C, the reaction rate is too slow, which is unsuitable, and if it exceeds 300°C, the production rate of chloropolysilane decreases, which is also unsuitable. In addition, 5iCQ4 is produced as a by-product with the production of chloropolysilane, but 5i2 is produced by distillation.
Cf1. , Si, CQ, etc. can be easily isolated.
次に本発明を実施例によって具体的に説明するが、以下
の実施例は本発明の範囲を限定するものではない。EXAMPLES Next, the present invention will be specifically explained with reference to Examples, but the following Examples do not limit the scope of the present invention.
実施例1
純度97.5%の平均粒径1μmのシリコンLogを、
塩化亜鉛60モル%、塩化ナトリウム20モル%、塩化
カリウム20モル%の組成である混合粉末100gと併
わせでガラス製反応容器に充填した。窒素ガスを流しな
がら203℃に加熱して溶融し、溶融塩中にシリコンを
良く分散させた後、塩素ガスを50mR/分の速度で導
入し4時間反応させた。生成物であるクロロポリシラン
及び副生物である5iCI24を凝縮液として捕集した
ところ5i(jl、、 Si、CF!、。Example 1 Silicon Log with a purity of 97.5% and an average particle size of 1 μm,
A glass reaction vessel was filled with 100 g of mixed powder having a composition of 60 mol% zinc chloride, 20 mol% sodium chloride, and 20 mol% potassium chloride. After heating and melting at 203° C. while flowing nitrogen gas to disperse silicon well in the molten salt, chlorine gas was introduced at a rate of 50 mR/min and reacted for 4 hours. When the product chloropolysilane and the by-product 5iCI24 were collected as a condensate, 5i(jl,, Si, CF!,) was obtained.
Si、 CQ、の量はそれぞれ12gt 17gt l
1gであった。The amounts of Si and CQ are 12gt and 17gt, respectively.
It was 1g.
この反応中粉塵の発生は認められなかった。No dust generation was observed during this reaction.
実施例2〜5
塩素に対して不活性な液体の種類と塩素化の反応温度を
変えた他は実施例1と同様の試験を行った。結果は表1
の通りである。Examples 2 to 5 The same tests as in Example 1 were conducted except that the type of liquid inert to chlorine and the chlorination reaction temperature were changed. The results are in Table 1
It is as follows.
表1
実施例2 ZnC454%、 K(446%
228 41.53K(:ff29%、 ZnC
Q、 71% 262 40.64 NaC140,
5%、 ZnCf1.59.5%262 44.1実
施例6〜8、比較例1
シリコンの粒径を変えた他は実施例1と同様の試験を行
った。結果は表2の通りである。Table 1 Example 2 ZnC454%, K (446%
228 41.53K (:ff29%, ZnC
Q, 71% 262 40.64 NaC140,
5%, ZnCf1.59.5%262 44.1 Examples 6 to 8, Comparative Example 1 The same test as in Example 1 was conducted except that the silicon particle size was changed. The results are shown in Table 2.
表2
実施例6 10 39.57
100 43.1
8 2000 37.2
比較例1 2500 8.0実施
例9〜1工、比較例2〜3
塩素化反応の温度を変えた以外は実施例1と同様にして
塩素化反応を行った。結果は表3の通りである。Table 2 Example 6 10 39.57
100 43.1 8 2000 37.2 Comparative Example 1 2500 8.0 Examples 9 to 1, Comparative Examples 2 to 3 The chlorination reaction was carried out in the same manner as in Example 1 except that the temperature of the chlorination reaction was changed. Ta. The results are shown in Table 3.
表3
実施例9 、 140 39.210
220 46.3
11 300 44.7
比較例2 100 反応せず3
350 0.5実施例12
実施例1と同様の塩素化反応を実施し生成したガスを蒸
溜してSi、Cl2G、 Si、(jl、を単離した。Table 3 Example 9, 140 39.210
220 46.3 11 300 44.7 Comparative example 2 100 No reaction 3
350 0.5 Example 12 A chlorination reaction similar to that in Example 1 was carried out, and the resulting gas was distilled to isolate Si, Cl2G, Si, (jl).
収量はそれぞれ16g、 9gであった6またガスクロ
マトグラフによるこれらの純度はいずれも99.999
%以上であった。The yields were 16g and 9g, respectively6 and their purity by gas chromatography was 99.999.
% or more.
実施例13
平均粒径0.3μmのシリコン20gを塩化カリウム2
7.6 g、塩化ナトリウム21.4 g 、塩化亜鉛
151gと共に混合し、フラスコ中で窒素ガスでガス置
換した後240℃に加熱して溶融し、該溶融塩中に塩化
水素ガスを流量50mQ/分で5時間吹き込んだ。生成
気体は冷却して液化させガスクロマトグラフィーにより
その組成分析を行った。結果は表4の通りである。尚、
ガス吹き込みの際、実質上粉塵の発生は認めら汎なかっ
た。Example 13 20 g of silicon with an average particle size of 0.3 μm was mixed with 20 g of potassium chloride.
7.6 g of sodium chloride, 21.4 g of sodium chloride, and 151 g of zinc chloride, and after replacing the gas with nitrogen gas in a flask, heated to 240°C and melted, hydrogen chloride gas was introduced into the molten salt at a flow rate of 50 mQ/ It blew for 5 hours in minutes. The produced gas was cooled and liquefied, and its composition was analyzed by gas chromatography. The results are shown in Table 4. still,
During gas blowing, virtually no dust was generated.
表4 SiCQ4Si2CQGSi、CD、。Table 4 SiCQ4Si2CQGSi, CD,.
Claims (1)
と塩素または塩化水素とクロロシランに対して不活性な
液体中で、140℃ないし300℃の温度でシリコンの
塩素化反応を遂行することからなるクロロポリシラン(
Si_nCl_2_n_+_2ただしn≧2)の製造方
法。 2、特許請求の範囲第1項に記載の方法であって、シリ
コンと塩素とクロロシランに対して不活性な液体が、塩
化亜鉛と塩化カリウムの溶融塩、塩化亜鉛と塩化ナトリ
ウムの溶融塩、または塩化亜鉛と塩化ナトリウムと塩化
カリウムの溶融塩のいずれかである方法。 3、特許請求の範囲第1項に記載の方法であってシリコ
ンと塩素または塩化水素とクロロシランに対して不活性
な液体が有機フッ素化合物である方法。 4、特許請求の範囲第3項に記載の方法であって、有機
フッ素化合物がペルフルオロポリエーテル油である方法
。[Claims] 1. Chlorination reaction of silicon at a temperature of 140°C to 300°C in a liquid inert to silicon and chlorine or hydrogen chloride and chlorosilane using silicon particles with an average particle size of 2 m or less Chloropolysilane (
A method for producing Si_nCl_2_n_+_2 (where n≧2). 2. The method according to claim 1, wherein the liquid inert to silicon, chlorine, and chlorosilane is a molten salt of zinc chloride and potassium chloride, a molten salt of zinc chloride and sodium chloride, or The method is one of molten salts of zinc chloride, sodium chloride and potassium chloride. 3. The method according to claim 1, wherein the liquid inert to silicon and chlorine or hydrogen chloride and chlorosilane is an organic fluorine compound. 4. The method according to claim 3, wherein the organic fluorine compound is perfluoropolyether oil.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23449186A JPS6389414A (en) | 1986-10-03 | 1986-10-03 | Production of chloropolysilane |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23449186A JPS6389414A (en) | 1986-10-03 | 1986-10-03 | Production of chloropolysilane |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6389414A true JPS6389414A (en) | 1988-04-20 |
Family
ID=16971859
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23449186A Pending JPS6389414A (en) | 1986-10-03 | 1986-10-03 | Production of chloropolysilane |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6389414A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6315099B1 (en) | 1997-01-29 | 2001-11-13 | Toyota Jidosha Kabushiki Kaisha | Driving force transmission system |
JP2011520762A (en) * | 2008-05-27 | 2011-07-21 | シュパウント プライベート ソシエテ ア レスポンサビリテ リミテ | Halogenated polysilane and plasma chemical treatment for producing the same |
JP2011523926A (en) * | 2008-05-27 | 2011-08-25 | シュパウント プライベート ソシエテ ア レスポンサビリテ リミテ | Halogenated polysilane and heat treatment for its production |
JP2013529591A (en) * | 2010-07-02 | 2013-07-22 | シュパウント プライベート ソシエテ ア レスポンサビリテ リミテ | Medium chain length polysilane and method for producing the same |
JP2013533198A (en) * | 2010-06-30 | 2013-08-22 | シュパウント プライベート ソシエテ ア レスポンサビリテ リミテ | Storage material and method for obtaining H-silane therefrom |
US10319977B2 (en) | 2014-03-12 | 2019-06-11 | Kabushiki Kaisha Toyota Jidoshokki | Fastening system with jig restriction flange |
-
1986
- 1986-10-03 JP JP23449186A patent/JPS6389414A/en active Pending
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6315099B1 (en) | 1997-01-29 | 2001-11-13 | Toyota Jidosha Kabushiki Kaisha | Driving force transmission system |
US6510932B2 (en) | 1997-01-29 | 2003-01-28 | Toyota Jidosha Kabushiki Kaisha | Driving force transmission system |
JP2011520762A (en) * | 2008-05-27 | 2011-07-21 | シュパウント プライベート ソシエテ ア レスポンサビリテ リミテ | Halogenated polysilane and plasma chemical treatment for producing the same |
JP2011523926A (en) * | 2008-05-27 | 2011-08-25 | シュパウント プライベート ソシエテ ア レスポンサビリテ リミテ | Halogenated polysilane and heat treatment for its production |
US9617391B2 (en) | 2008-05-27 | 2017-04-11 | Nagarjuna Fertilizers And Chemicals Limited | Halogenated polysilane and thermal process for producing the same |
US9701795B2 (en) | 2008-05-27 | 2017-07-11 | Nagarjuna Fertilizers And Chemicals Limited. | Halogenated polysilane and plasma-chemical process for producing the same |
JP2013533198A (en) * | 2010-06-30 | 2013-08-22 | シュパウント プライベート ソシエテ ア レスポンサビリテ リミテ | Storage material and method for obtaining H-silane therefrom |
US9034291B2 (en) | 2010-06-30 | 2015-05-19 | Spawnt Private S.A.R.L. | Storage material and method for obtaining H-silanes therefrom |
JP2013529591A (en) * | 2010-07-02 | 2013-07-22 | シュパウント プライベート ソシエテ ア レスポンサビリテ リミテ | Medium chain length polysilane and method for producing the same |
US10319977B2 (en) | 2014-03-12 | 2019-06-11 | Kabushiki Kaisha Toyota Jidoshokki | Fastening system with jig restriction flange |
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