JPS6384127A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6384127A JPS6384127A JP61228211A JP22821186A JPS6384127A JP S6384127 A JPS6384127 A JP S6384127A JP 61228211 A JP61228211 A JP 61228211A JP 22821186 A JP22821186 A JP 22821186A JP S6384127 A JPS6384127 A JP S6384127A
- Authority
- JP
- Japan
- Prior art keywords
- bump
- alloy
- electrode
- bonded
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 25
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 11
- 239000000956 alloy Substances 0.000 claims abstract description 11
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 10
- 229910052718 tin Inorganic materials 0.000 claims abstract description 9
- 229910052802 copper Inorganic materials 0.000 claims abstract description 8
- 229910052738 indium Inorganic materials 0.000 claims abstract description 6
- 238000006243 chemical reaction Methods 0.000 claims abstract description 5
- 230000005496 eutectics Effects 0.000 claims abstract description 4
- 229910052793 cadmium Inorganic materials 0.000 claims abstract description 3
- 229910052797 bismuth Inorganic materials 0.000 claims abstract 2
- 229910000765 intermetallic Inorganic materials 0.000 claims abstract 2
- 229910018140 Al-Sn Inorganic materials 0.000 claims 1
- 229910018137 Al-Zn Inorganic materials 0.000 claims 1
- 229910018182 Al—Cu Inorganic materials 0.000 claims 1
- 229910018564 Al—Sn Inorganic materials 0.000 claims 1
- 229910018573 Al—Zn Inorganic materials 0.000 claims 1
- 239000008188 pellet Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 abstract description 10
- 229910052751 metal Inorganic materials 0.000 abstract description 10
- 239000002184 metal Substances 0.000 abstract description 10
- 239000010953 base metal Substances 0.000 abstract description 7
- 239000000203 mixture Substances 0.000 abstract description 2
- 239000002344 surface layer Substances 0.000 abstract description 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 4
- 239000013078 crystal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 description 20
- 238000007747 plating Methods 0.000 description 13
- 229910052737 gold Inorganic materials 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- 239000011701 zinc Substances 0.000 description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 241000257465 Echinoidea Species 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229920001296 polysiloxane Polymers 0.000 description 5
- 208000025174 PANDAS Diseases 0.000 description 4
- 208000021155 Paediatric autoimmune neuropsychiatric disorders associated with streptococcal infection Diseases 0.000 description 4
- 240000004718 Panda Species 0.000 description 4
- 235000016496 Panda oleosa Nutrition 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000005553 drilling Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 235000001674 Agaricus brunnescens Nutrition 0.000 description 1
- 229930091051 Arenine Natural products 0.000 description 1
- 235000017166 Bambusa arundinacea Nutrition 0.000 description 1
- 235000017491 Bambusa tulda Nutrition 0.000 description 1
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 1
- 241000238631 Hexapoda Species 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 235000014676 Phragmites communis Nutrition 0.000 description 1
- 244000082204 Phyllostachys viridis Species 0.000 description 1
- 235000015334 Phyllostachys viridis Nutrition 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910007570 Zn-Al Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000011425 bamboo Substances 0.000 description 1
- 210000003323 beak Anatomy 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000012792 core layer Substances 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 229910052938 sodium sulfate Inorganic materials 0.000 description 1
- 235000011152 sodium sulphate Nutrition 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
Landscapes
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の目的１
（産業上の利用分野）
へ
本発明はＴＡＢ（ＴｅｐｅＡｕｔｏｍａｔｅｄ Ｂｏｎ
ｄｉｎｇ）方式の半導体装置のパンダの改良に関する。[Detailed Description of the Invention] [Objective of the Invention 1 (Industrial Application Field) The present invention is directed to a TAB (Tepe Automated Bonn).
ding) type semiconductor device.
（従来の技術）
半導体装置のボンディング技術はワイヤボンディング技
術と、ワイヤレスボンディング技術との２つに大別され
る。前者はワイヤで半導体チップの電極とリードフレー
ムのリード端子と２１妾続す電極の寸法が１００μｍ口
以下となり、かつ高密度となるにつれ、待に信頼性の点
で間頂が多くなる。(Prior Art) Bonding technology for semiconductor devices is roughly divided into two types: wire bonding technology and wireless bonding technology. In the former case, the dimensions of the electrodes connected by wires to the electrodes of the semiconductor chip and the lead terminals of the lead frame are 100 μm or less, and as the density becomes higher, the number of gaps increases in terms of reliability.
これに対して、後者の方法は半導体チップの電極と、リ
ードフレームのリード端子又はガラス、セラミック基板
上の／ｌｆｌとを一括してボンディングするものであり
、Ｅ子の高集積化に対応して信頼性を確保する之めに実
用化がなされている。On the other hand, the latter method involves bonding the electrodes of the semiconductor chip and the lead terminals of the lead frame or /lfl on the glass or ceramic substrate all at once, and is compatible with the high integration of E elements. It has been put into practical use to ensure reliability.
このワイヤレスボンディング４１．１’ＪＴとしては１
例えばテープオートメイティッドボンディング方式（Ｔ
ＡＢ方式）、フリップテップ方式あるいはＣＣＢ方式な
どが知られており、これらの方式では通常半導体チップ
の電極上にパンダを形成する。This wireless bonding 41.1'JT is 1
For example, tape automated bonding method (T
AB method), flip-step method, and CCB method are known, and in these methods, pandas are usually formed on the electrodes of the semiconductor chip.
このパンダとしては、従来から高価な金が検討されてい
る。For this panda, expensive gold has been considered.
従来、半４体チップの！極上に形成される金からなるバ
ンプは％第６閣に示Ｔようなものである。Conventionally, half 4 body chips! The bump made of gold formed on the top is like that shown in the 6th cabinet.
第５図に訃いて、シリコン基板３１上には酸化シリコン
嗅等の絶縁膜３２２介してＡＩ又はＡｊ合金専からなる
電極３３がパターニングされて形成され、全面に窒化シ
リコン’Ｉ１１ ％のパッジベージ藁ン膜３４を被１し
た後、゛電極３３上０パッシベーシッン膜３４を選択的
にエツチングして電極３３を露出させている。−茸出し
之電極３３上にはＣｒ。As shown in FIG. 5, an electrode 33 made of AI or Aj alloy is formed by patterning on a silicon substrate 31 through an insulating film 322 such as silicon oxide, and a padding layer of 11% silicon nitride is formed on the entire surface. After covering the film 34, the passive basis film 34 on the electrode 33 is selectively etched to expose the electrode 33. - Cr on the mushroom removal electrode 33;
Ｎｉ、Ｍｏ＊ＵｕｓＡｕ＋Ａｇ 等からなる下地金属
３５が形成されている。更に、下地金属３５上にに金バ
ンプ３６が形成されている。A base metal 35 made of Ni, Mo*UusAu+Ag, etc. is formed. Furthermore, gold bumps 36 are formed on the base metal 35.
前記′Ｆ地金＠３５ははんだとの接合性を改讐するため
に設けられる％、Ｏである。この自回・Ｏために下地金
＠３５としては１層〜３層の金＠層が設けられ１種々の
組合せが＠村されている。The 'F base metal@35 is %O provided to improve bondability with solder. For this purpose, one to three gold layers are provided as the base metal layer 35, and various combinations are formed.
ところで、金バンプ３６は通常めっき又は蒸着により形
成され、種々の方法が促案されているが、これらの方法
は臥下に述べるようにいずれも欠点がある。Incidentally, the gold bumps 36 are usually formed by plating or vapor deposition, and various methods have been proposed, but all of these methods have drawbacks as described below.
めっきによる方法では１例えば電礪孔あけ工程が終了し
た後、ｖ１極上の自然収化模を反応性イオンエツチング
により除去し、全面に１〜３．１０下地金ｒＡ？蒸曙し
、電砥部が開孔しためっきレジストを被覆し、電極上の
下地金属上ｖＣ１７）＋はんだめっき２豆ない、めりき
レジスト及び下地金属の不要部分？エツチングするとい
り工程がとられる。In the plating method, for example, after the electric drilling step is completed, the natural grains on the V1 layer are removed by reactive ion etching, and a base metal rA? After steaming, the abrasive part covers the plating resist with holes, and there is no need for vC17) + solder plating on the base metal on the electrode, unnecessary parts of the plated resist and base metal? Etching involves a drilling process.
この丸め工程が複雑になるという欠点がある。The drawback is that this rounding process is complicated.
また蒸着による方法では時間がかがり不都合である。Further, the method using vapor deposition is disadvantageous in that it is time consuming.
いずれにしても従来の方法では、下地金＠２用い、しか
も′電極部以外り部分に今がめつきあるいはｆＡ′ｙｉ
ｔされないようにマスク？形成しなければならない等、
工程の煩雑化につながる基本的な問題点がある。In any case, in the conventional method, the base metal @2 is used, and the part other than the electrode part is not coated or fA'yi.
Mask so you don't get hit? must be formed, etc.
There are fundamental problems that lead to complicated processes.
これを鱗決丁ぺ（Ｚｎ会被被覆たバンプつきテープが考
案（′！＃開昭５５−１０３７３４ ）があるが。A tape with bumps coated with Zn was devised ('!#103734, 1972).
Ｚｎ被覆層が硬く塑性変形しにくいなめ妾合が元分行れ
ない。The Zn coating layer is hard and difficult to plastically deform, so licking cannot be performed.
（発明が解決しよりとする問題点）
本発明は上記問題点？解消するためになされ九もつであ
ジ、’ＫＩＩＬ上に下地金属なしで直接パンブタ形成す
る％Ｄである。(Problems to be solved by the invention) Does the invention solve the above problems? In order to solve this problem, there are nine methods that can be used to form a mold directly on the KIIL without an underlying metal.
【発明の構成コ
（問題ｔｆ４決するための手段と作用）本発明はバンプ
全ｔＪＩ−あるいは表面層がＺｎ、Ｃｕ。Structure of the Invention (Means and Actions for Solving Problem TF4) The present invention is characterized in that the entire bump or surface layer is made of Zn or Cu.
Ｓｎの中から選ばれた少なくとも２櫨の金１を主Ｉｉ！
、分とする金属体で構成されるかあ６いはＺｎ。Lord Ii with at least 2 gold 1 selected from Sn!
, or Zn.
Ｓｎ、Ｃｕの第１成分群から選ばれた少なくとも一種と
Ｉｎ、ＢＬ、Ｃｄの第２取分鮮から選ばれｔ少くとも一
種から構成された金属体であることを特徴とＴ６もので
ある。The T6 material is characterized by being a metal body composed of at least one member selected from the first component group of Sn and Cu and at least one member selected from the second group of In, BL, and Cd.
本発明を原理的に説明すると吠態因に示される、謙に、
Ｚｎ、Ｓｎ 、Ｃｕｔ）様にＡｌと共晶あるいは金属間
化合′ＪｊｌＪ？つくる成分元素がＡＩ中に拡孜し反応
層２形成下る成分と、金属体の硬度ｅ下げ容易に型性変
形する事３助えるＩｎ、ＢＩ、Ｃｄの喀２成分から金＠
体が構成される事により、ＺｎだけあるいはＣｕ、Ｓｎ
だけでできたバンプに比べ、Ａｌ￥！を極との反も層が
できやすくなる。次にバンプ接合部の断面を第１図２も
ちいて説明する。To explain the present invention in principle, it is humbly explained by the barking cause.
Zn, Sn, Cut), eutectic or intermetallic combination with Al 'JjlJ? The constituent elements to be formed expand into AI to form a reaction layer 2, and the 2 constituents of In, BI, and Cd help to lower the hardness of the metal body and easily deform the mold.
Depending on the composition of the body, only Zn or Cu, Sn
Compared to the bump made only by Al￥! The pole and the opposite also make it easier to form a layer. Next, a cross section of the bump joint will be explained using FIG. 1 and FIG.
このバンプの構成は箒１図（ａ） Ｋ示す様にバンプつ
きテープ３のバンプ部１１０表面に本発明の合金被覆部
２がもうけられ半導本テップ５の上０Ａｌシ！８Ｍ４ｖ
ｃ反芯層１に；り接合されてｈるものである。The configuration of this bump is as shown in Figure 1 (a) K, the alloy coating part 2 of the present invention is formed on the surface of the bump part 110 of the tape 3 with bumps, and the 0Al film is formed on the top of the semiconductor tape 5. 8M4v
It is bonded to the anti-core layer 1.
さらに第１図（ｂ）では絶縁テープ６ｖＣ付着されたり
−ド２０ｖＣエツチングした穴３１出しバンプ１１を形
成して本発明の今萬本２を被覆したものである。また号
１図ｔｃ）はバンプ７表面に合金体２３％。Further, in FIG. 1(b), a bump 11 with holes 31 formed by adhering 6vC of insulating tape and etching 20vC of insulating tape is used to cover the present invention 2. In addition, Figure 1 tc) has 23% alloy on the bump 7 surface.
うけ九もので、第１図（ｄ）はバンプ８全体が本発明の
合金ｔ＄になっている事を示している。As a matter of fact, FIG. 1(d) shows that the entire bump 8 is made of the alloy of the present invention.
核金属本？もつける方法はめっき、蒸着、スパッタ、ｍ
虫金嘴へのディップ専のいずれかの方法をとってもよい
。ま九Ａｌ電翫側にバンプ２形成する場合は、溶融金属
中あるいは電極側基板に超貨波をかけてバンプ３ｔてて
もよい。さらにはんだで通常を本成分となってｈるｐｂ
を含んでもよい。Nuclear metal book? Methods of attaching include plating, vapor deposition, sputtering, m
You can also use one of the methods that exclusively involves dipping into the beak of insects. When the bumps 2 are formed on the Al electrode side, the bumps 3t may be formed by applying a superfrequency wave to the molten metal or to the electrode side substrate. Furthermore, with soldering, the normal component becomes HPB.
May include.
リードとの接続は通常リード表面がＡｇ、Ｓｎ。For connections with leads, the lead surface is usually Ag or Sn.
Ａｕ、Ｎｉはんだのいずれかのめっきがしであるか゛。Is it plated with either Au or Ni solder?
これとバンプの接続は通常の熱圧着で行れ、＠１図（ａ
）〜（ｄ）に示される様な構成をもつ半導体装置となる
。The connection between this and the bump can be done by normal thermocompression bonding.
A semiconductor device having the configuration shown in ) to (d) is obtained.
（実施例） 以下１本発明の実施例を図面を参照して説明する。(Example) An embodiment of the present invention will be described below with reference to the drawings.
実施例１
第２図は本発明の実施例で、Ｃｕのインナーリード３Ｖ
ｃバンプ１１ε形成させその表面にＺｎ−Ｉｎ合金めっ
′ａ２をほどこしてから、このめっきをＡノミ極４に直
接接続し、Ｚｎ−Ａｌ共晶反応層１ｖｃよって接合され
た半導体装置である。この半導体装置の製造法は以下の
様になる。Example 1 FIG. 2 shows an example of the present invention, in which the inner lead of Cu is 3V.
This is a semiconductor device in which a C bump 11ε is formed, a Zn-In alloy plating 'a2 is applied to the surface thereof, and this plating is directly connected to the A chisel pole 4, which is bonded by a Zn-Al eutectic reaction layer 1vc. The method for manufacturing this semiconductor device is as follows.
まず１通常のウニ八プロセスにより配線・電極の形成２
行なった後、全面にパッシベーション膜を堆積し、更に
コンタクトバット用の開孔Ｖ１５を形り
成したシリコンウェハ珂？用意し友。前記配線パ電極は
スパッタリング製置により形成された嘆厚約１μｍ０Ａ
ｌ−２ＳＳ ｉ −２１Ｃｕからなり。First, 1. Formation of wiring and electrodes using the normal Unihachi process. 2.
After this, a passivation film was deposited on the entire surface of the silicon wafer, and an opening V15 for a contact butt was formed. Prepared friend. The wiring pad electrode is formed by sputtering and has a thickness of about 1 μm0A.
Consisting of l-2SS i-21Cu.
またパッジベージリン膜としては窒化シリコン膜が用い
られている。そして、このシリコンウニ八杷に形成され
た各チップには８０μｍ口の電極（コンパクトパッド）
がそれぞれ６４個形成されている０次に、このシリコン
ウニ１１Ａについてはプ゛レードダイシングを行なっ之
のち１個々の半導体チップにわけている。Furthermore, a silicon nitride film is used as the padding film. Each chip formed on this silicon sea urchin Yawata has an 80 μm electrode (compact pad).
The silicon urchins 11A each having 64 pieces formed thereon are subjected to blade dicing and then divided into individual semiconductor chips.
次ｖｃ第２図にも示される様にパングー１０ついたイン
ナーリード２もつテープを用意し、そＶ表面にＺｎ−Ｉ
ｎめっきを行った。このめりき条件は以下の様な酒１石
散塩−アンモ；≦ｐ浴からの１１で行っている。尚めつ
き膜厚は５μｍである。Next, as shown in Figure 2, prepare a tape with 2 inner leads and 10 Pangu tapes, and coat the V surface with Zn-I.
n plating was performed. This grinding condition is carried out under the following conditions: 11 from the Sake 1 stone powdered salt-ammonium; ≦p bath. The plating film thickness was 5 μm.
亜鉛・−３０１１／ｌ インジウム−５１１７１１硫
酸ナトリウム−５５９／ｌ 塩化ナトリウム−６５１
１／ｌ ［ｌＪ！アンモニ１フムー４ （１１／に酒
石酸ナトリウム−２０１１／ｌ アンモニア−２５０
ｍＪ／ｊ Ｉ）Ｈ−１１アソード電流−１，ＩＡ／ｄ
ｍ意 浴温−２７℃
このインナーリード！ｐ２００℃に加熱したインナーリ
ードボンダーのステージ・Ｄ上におきボンダーのツール
へ度を３９０℃とし２ｇの圧力で２秒間図芯２おこさせ
８２７４７７２行った。その麦Ｓｌデッグ部分樹脂封止
し、インナーリード■他端をデバイスのアウターリード
にはんだづけをし半導体装置としで完成させた。Zinc - 3011/l Indium - 511711 Sodium sulfate - 559/l Sodium chloride - 651
1/l [lJ! Ammonia 1 humu 4 (11/sodium tartrate-2011/l ammonia-250
mJ/j I) H-11 anode current -1, IA/d
My intention Bath temperature -27℃ This inner reed! It was placed on the stage D of an inner lead bonder heated to 200°C, and the bonder tool was heated to 390°C and the drawing core 2 was raised for 2 seconds with a pressure of 2g. The SL deck was partially sealed with resin, and the other end of the inner lead was soldered to the outer lead of the device to complete the semiconductor device.
実ＩＡガ２
まず、実施例１と同様なシリコンウニへ蛇３用意し九〇
この鴨合、配線・電極としてはＡｌ−１俤ＳＭが用いら
れ、シリコンウニへ祠に形成された各チップには６０μ
ｍ口の電極（コンタクトバット）がそれぞれ１２８個形
成されている。なお、このシリコンウェハーは素子形成
袋、かなりの期間２経てお９．４極表面が固い酸化膜で
、′Ｊ！われでいることが予けされｔので、オゾン洗浄
２行なった。Actual IA Ga2 First, prepare the same silicone wire as in Example 1, use Al-1 SM as the wiring and electrodes, and attach each chip formed in the silicone wire to the silicone wire. is 60μ
128 m-hole electrodes (contact butts) are each formed. In addition, this silicon wafer is an element forming bag, and after a considerable period of time, the surface of the 9.4 pole is a hard oxide film, and 'J! I didn't want to be alone, so I did two rounds of ozone cleaning.
あらかじめ半導体チップのＡｊ電極の配列に対応し九バ
ンプ１２２別の基板に設けておいた。このバンプはめっ
きでつくっておりｃｕ−Ｉｎｐ主成分とする。めっきの
成分としては以下の通りである。Nine bumps 122 were previously provided on separate substrates corresponding to the arrangement of the Aj electrodes of the semiconductor chip. This bump is made by plating and has cu-Inp as its main component. The components of the plating are as follows.
シアン化ｔｌｉｉ−３５１１／ｌ −Ｊ／アン化イン
ジウム−５１１／ｌ シアン化ナトリウム−１０１１
／ｌ カソード電流密２− Ｉ Ａ ／ ｄｍ”温度
−２５℃
さらにインナーリードとこの別居仮にもうけられたバン
プを当接させ熱処理してＣｕ−ＩｎのバンプとＳｎめっ
きしたリードにＩｎ−Ｓｎの共晶１４を利用し転写した
のちバンプＯついたリードを半導体チップの電極に対応
させてインナーリードボンディングをした。この際Ｃｕ
の酸化２ふせぐｔめにＮｚ＋）Ｉｔ混合ガスどふきつけ
３００℃で５秒間、５５１の荷重で接続し九。その仮エ
ポキシ樹脂１３で、インナーリードＤ接涜された半導体
チップをモールドし外部にでたり−ド１５をベンディン
グして半導体装置として完成させた。Cyanide tlii-3511/l -J/Indium annide-511/l Sodium cyanide-1011
/l Cathode current density 2- I A / dm"Temperature -25℃Furthermore, the inner lead is brought into contact with the bump that was temporarily created in this separate house, and heat treated to form an In-Sn joint between the Cu-In bump and the Sn-plated lead. After transferring using Cu 14, inner lead bonding was performed by matching the leads with bumps O to the electrodes of the semiconductor chip.
After the second oxidation test, apply Nz+)It mixed gas at 300°C for 5 seconds and connect with a load of 551. The semiconductor chip with the inner leads D attached was molded using the temporary epoxy resin 13, and the leads 15 were bent to the outside to complete the semiconductor device.
実施例３
まず、 実ｔ＠例１と同様なシリコンウニへに）を用意
した。この喘合、配線・電極としてはＡｌ−１＝１８４
が用いられ、シリコンウェハ綱に形成されｔ各チップに
は２００μｍ口の１１侃（コンタクトパッド）がそれぞ
れ１２個形成されでいる。Example 3 First, a silicone sea urchin similar to that in Example 1 was prepared. For this mesh, wiring and electrodes, Al-1 = 184
The contact pads are formed on a silicon wafer and each chip has 11 contacts (contact pads) each having a diameter of 200 μm.
このウニへ−の′ｖｔ極に相当する部分にあらかじめ電
極と同一径の穴をあけ之メタルマスク（Ｔｔで作製）を
この穴と電極があうように位置あわせをしｔ６その？麦
１５０μｍ径のＡＩボールの表面にあらかじめ、４０Ｃ
ｕ−４０Ｓｎ−２０Ｂｉ Ｏ被ＩＩ ｒＵ ’Ｅ−３μ
ｍはどこしておき、このボール２メタルマスクの穴にお
いｔ、その後ウニへ−基板１Ｃ２０ＫＨｚの超鐙彼憑勧
を加えながら２３０℃で５秒間区持し。A hole with the same diameter as the electrode is pre-drilled in the part corresponding to the 'vt pole of this sea urchin, and a metal mask (made in Tt) is positioned so that this hole matches the electrode. 40C was applied in advance to the surface of an AI ball with a diameter of 150 μm.
u-40Sn-20Bi O II rU 'E-3μ
Place m somewhere, put the ball into the hole of the metal mask, and then heat the sea urchin at 230°C for 5 seconds while applying a 20KHz super stirrup signal to the board.
ボール？バンブとしｖＬ甑上に形成した。この際損動に
よりメタルマスクの穴からＡｊボールがとびだ丁事もあ
っ九のでポリイミドＤテープとすでに穴にボール導入っ
たメタルマスクの上に全面にはっ九。さらに一部接者が
不充分々ボールもあっ九ツ
ので３００℃に加熱し之ボンディング歩＃−ルに２ｇの
荷重分かけボール分おし、つけ、固着？充分なものとし
た。ball? It was made into a bamboo and formed on a vL koshiki. At this time, due to the damage, the AJ ball jumped out of the hole in the metal mask, so it completely covered the polyimide D tape and the metal mask that had already introduced the ball into the hole. Furthermore, some of the balls were not in good contact, so I heated them to 300℃, applied a load of 2g to the bonding step, and pushed the balls in place to make them stick. It was considered sufficient.
この様にしてできたバンプつきウニ八−をダイジングし
たのち１個々のチップにし、ＡＩめっきとしたＣｕリー
ドのインナーリード部６バングに直接接続し、第１図（
Ｃ）の様なバンプ淡合部の構成？もつ半導体装置２製造
させた。After dicing the bumped sea urchin eight produced in this way, it was made into one individual chip, which was directly connected to the inner lead part 6 bang of the AI-plated Cu lead, as shown in Figure 1.
Is the configuration of the bump blending part like C)? Manufactured two semiconductor devices.
実施例４
まず、泉施し１」１と同様なりリコンウェハセ叶２用意
し九〇この１隨合、配線・電極としてはＡｌ−１１ｓｔ
が用いられ、シリコンウェハ掴に形成され比容チップに
（１５００μｍ口の′成極（コンタクトパッド）がそれ
ぞれ２１１Ｎ形成されでいる。Example 4 First, prepare a silicone wafer sheet 2 as in 1, and use Al-11st for wiring and electrodes.
was used, and 211N contact pads (1500 μm in diameter) were formed on the silicon wafer grip and on the specific capacitance chip.
次にＡｕめっきし２Ｃｕインナーリード２具備したキャ
リアチーブ３用意し、インナーリードの先端１６に財４
図で示す様にめっき１８の上に酸化を防ぐ之めｖＣＮ
２ガスをふきつけながら行りた。その後、ダイシングさ
れた半導体θテップ上に電極と立喧合わせ？してバンプ
２層合させた。Next, prepare a carrier chip 3 equipped with 2 Au-plated 2Cu inner leads, and attach a material 4 to the tip 16 of the inner lead.
As shown in the figure, vCN is applied on top of plating 18 to prevent oxidation.
I went there while blowing gas. After that, the electrodes are placed on the diced semiconductor θ tip? Then, the two bump layers were combined.
この時の温度は２３０℃で、リードと電極間の距離を２
０μｍ＃／ｃ深ちながら行った。この際圧力（まかけて
いないが、４ＱＫＨｚの超ｉ彼？インナーリードと通し
、浴融したバンプに付加し、電極上のＡＩの原化膜２と
りＯぞいで接合さｔている。そつ１及ポツテイング麟ｅ
テツプ浸ｊに滴Ｆし固化させて基板上に装着しｔｏ
実施例５
実施例１と同様な半導体チップを用意し、さらに実施列
１と同様な形犬２しｔインナーリード分もつキャリアテ
ープビ容易した。このインナーリードのパンダ部に８０
Ｃｄ−２０Ｚｎ７）めっきを膜厚３μｍで成長させ九〇
その後実施例１と同様な半導体装置？作製した。The temperature at this time was 230℃, and the distance between the lead and the electrode was 2
The depth was 0 μm #/c. At this time, pressure (although not applied) was passed through the inner lead of 4QKHz, applied to the bump melted in the bath, and bonded to the AI original film 2 on the electrode. and potting ring
Example 5 A semiconductor chip similar to that in Example 1 was prepared, and a carrier tape with a shape similar to that in Example 1 and a carrier tape with an inner lead portion was added. It was easy. 80 in the panda part of this inner lead
Cd-20Zn7) plating was grown to a film thickness of 3 μm, and then a semiconductor device similar to that of Example 1 was produced. Created.
本＠明によれば従来バンプ硬度が高く接合不可能であっ
た。Ｚｎ、Ｓｎ、Ｕｕ等のパンダも軟化させ改良する蔓
ができる。また金バンプに比べ隠めでがん便々工程でバ
ンプを形ＦＲｆる”ｉＺができワイヤレスボンディング
技術の導入２琴易にし、素子の微細化に対［Ｆ］してボ
ンディングの信頼性の高い半導体装置２製造できる等産
梁上極めて顕著な効果？うむものである。According to Akira Hon@Mei, the hardness of conventional bumps was so high that it was impossible to bond them. Pandas such as Zn, Sn, and Uu also have vines that soften and improve them. In addition, compared to gold bumps, it is possible to form bumps in a hidden process in a more convenient process.Introduction of wireless bonding technology2. This has a very significant effect on the production efficiency of the device 2.
Claims (2)
と、この電極に直接形成されたバンプと、このバンプに
接続されたリードを備えた半導体装置において、少なく
ともバンプの電極との接合表面が、Ｚｎ、Ｓｎ及びＣｕ
の少なくとも２種を主成分とする合金もしくはＺｎ、Ｓ
ｎ及びＣｕの少なくとも一種とＩｎ、Ｂｉ及びＣｄの少
なくとも１種とを主成分とする合金で形成されており、
バンプと電極との接合がＡｌ−Ｚｎ及びＡｌ−Ｓｎの共
晶又はＡｌ−Ｃｕの金属間化合物の少なくとも一種の反
応により直接接合されていることを特徴とする半導体装
置。(1) In a semiconductor device including a semiconductor pellet having an electrode mainly composed of Al, a bump formed directly on the electrode, and a lead connected to the bump, at least the bonding surface of the bump with the electrode is Zn, Sn and Cu
An alloy containing at least two of the following as main components or Zn, S
It is formed of an alloy whose main components are at least one of n and Cu and at least one of In, Bi and Cd,
1. A semiconductor device characterized in that a bump and an electrode are directly bonded by a reaction of at least one type of eutectic of Al-Zn and Al-Sn or an intermetallic compound of Al-Cu.
ンディング用テープを有することを特徴とする特許請求
の範囲第１項記載の半導体装置。(2) The semiconductor device according to claim 1, further comprising a lead or tape carrier bonding tape having the bumps.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61228211A JPH0732170B2 (en) | 1986-09-29 | 1986-09-29 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61228211A JPH0732170B2 (en) | 1986-09-29 | 1986-09-29 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6384127A true JPS6384127A (en) | 1988-04-14 |
| JPH0732170B2 JPH0732170B2 (en) | 1995-04-10 |
Family
ID=16872929
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61228211A Expired - Lifetime JPH0732170B2 (en) | 1986-09-29 | 1986-09-29 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0732170B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6002287A (en) * | 1997-05-08 | 1999-12-14 | Canon Kabushiki Kaisha | Signal outputting apparatus |
| US7709947B2 (en) | 2006-06-15 | 2010-05-04 | Kabushiki Kaisha Toyota Jidoshokki | Semiconductor device having semiconductor element with back electrode on insulating substrate |
-
1986
- 1986-09-29 JP JP61228211A patent/JPH0732170B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6002287A (en) * | 1997-05-08 | 1999-12-14 | Canon Kabushiki Kaisha | Signal outputting apparatus |
| US7709947B2 (en) | 2006-06-15 | 2010-05-04 | Kabushiki Kaisha Toyota Jidoshokki | Semiconductor device having semiconductor element with back electrode on insulating substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0732170B2 (en) | 1995-04-10 |
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