JPS6380413A - Transparent conductor - Google Patents
Transparent conductorInfo
- Publication number
- JPS6380413A JPS6380413A JP61225351A JP22535186A JPS6380413A JP S6380413 A JPS6380413 A JP S6380413A JP 61225351 A JP61225351 A JP 61225351A JP 22535186 A JP22535186 A JP 22535186A JP S6380413 A JPS6380413 A JP S6380413A
- Authority
- JP
- Japan
- Prior art keywords
- film
- transparent
- tin oxide
- transparent conductive
- transparent conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004020 conductor Substances 0.000 title claims description 12
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 13
- 229910001887 tin oxide Inorganic materials 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 9
- 229910052787 antimony Inorganic materials 0.000 claims description 7
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 239000011701 zinc Substances 0.000 claims description 6
- 229910052725 zinc Inorganic materials 0.000 claims description 6
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- 239000011737 fluorine Substances 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- NPNPZTNLOVBDOC-UHFFFAOYSA-N 1,1-difluoroethane Chemical compound CC(F)F NPNPZTNLOVBDOC-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- VOPWNXZWBYDODV-UHFFFAOYSA-N Chlorodifluoromethane Chemical compound FC(F)Cl VOPWNXZWBYDODV-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910021627 Tin(IV) chloride Inorganic materials 0.000 description 1
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Inorganic materials O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- RJCQBQGAPKAMLL-UHFFFAOYSA-N bromotrifluoromethane Chemical compound FC(F)(F)Br RJCQBQGAPKAMLL-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- AFYPFACVUDMOHA-UHFFFAOYSA-N chlorotrifluoromethane Chemical compound FC(F)(F)Cl AFYPFACVUDMOHA-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 238000005118 spray pyrolysis Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- YEAUATLBSVJFOY-UHFFFAOYSA-N tetraantimony hexaoxide Chemical compound O1[Sb](O2)O[Sb]3O[Sb]1O[Sb]2O3 YEAUATLBSVJFOY-UHFFFAOYSA-N 0.000 description 1
- 150000003606 tin compounds Chemical class 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Non-Insulated Conductors (AREA)
- Manufacturing Of Electric Cables (AREA)
- Photovoltaic Devices (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は透明導電体、特に太陽電池用透明電極として最
適な透明導電体に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a transparent conductor, particularly a transparent conductor suitable as a transparent electrode for solar cells.
近年、ガラス等の透明基体上に透明導電膜を形成し次い
で非晶質シリコン（ａ−Ｓｉ）を主成分とする光電変換
素子を形成し、その後Ａｌ 等の電極を形成した低コス
トの太陽電池が知られている。かかるａ−９ｉ太ＶＡＸ
池は、光電変換効率が他の結晶半導体を用いた太陽電池
に比べ低いことがらそれを大にするため種々の対策が施
されている。In recent years, low-cost solar cells have been developed in which a transparent conductive film is formed on a transparent substrate such as glass, then a photoelectric conversion element mainly composed of amorphous silicon (a-Si) is formed, and then electrodes such as Al are formed. It has been known. It takes a-9i thick VAX
Since the photoelectric conversion efficiency of solar cells is lower than that of solar cells using other crystalline semiconductors, various measures have been taken to increase it.
そのひとつとして、フッ素やアンチモン等をドープした
酸化錫を主成分とする低抵抗の透明導電膜が透明電極と
して用いられる。As one of these, a low-resistance transparent conductive film whose main component is tin oxide doped with fluorine, antimony, etc. is used as a transparent electrode.
しかしながら、通常ａ−３ｉ膜の形虜に用いられるグロ
ー放電法ではａ−８ｉ膜形成時に透明膜Ｎ膜が水素プラ
ズマにさらされるため、透明導電膜である酸化錫膜表面
が還元され、その結果、可視光透過率の減少、面積抵抗
の増加がおこり、酸化錫を主成分とする透明導電膜を透
明電極として用いた太陽電池では変換効率の向上に限度
があった。However, in the glow discharge method normally used to form the a-3i film, the transparent film N film is exposed to hydrogen plasma during the formation of the a-8i film, so the surface of the tin oxide film, which is a transparent conductive film, is reduced, and as a result, , a decrease in visible light transmittance and an increase in sheet resistance occurred, and there was a limit to the improvement in conversion efficiency in solar cells using a transparent conductive film containing tin oxide as a main component as a transparent electrode.
〔間１点を解決するための手段〕
本発明は前記間順点を解決するためになされたものであ
って太陽電池の変換効率を高めるのに好運な透明導電体
を提供するものである。[Means for Solving the Problem] The present invention has been made to solve the above-mentioned problem, and provides a transparent conductor suitable for increasing the conversion efficiency of solar cells.
すなわち、本発明は透明基体と、該６四基体表面上に形
成された酸化錫を主成分とする透明導電１３と、該透明
導電膜上に形成されたチタン、亜鉛、及びアンチモンの
いずれがの酸化物、またはそれらの混合酸化物からなる
透明膜とからなる透明導電体である。That is, the present invention provides a transparent substrate, a transparent conductive material 13 formed on the surface of the substrate and containing tin oxide as a main component, and which of titanium, zinc, and antimony formed on the transparent conductive film. It is a transparent conductor consisting of a transparent film made of an oxide or a mixed oxide thereof.
本発明において、酸化錫を主成分とする透明導電膜はフ
ッ素がドープされた酸化錫膜であることが好ましく、ま
たチタン、亜鉛、及びアンチモンノ夫々ノ酸化物カＴｉ
Ｏ２、ＺｎＯ、及ヒ５ｂ２０３テアルことが好ましい。In the present invention, the transparent conductive film containing tin oxide as a main component is preferably a tin oxide film doped with fluorine, and is preferably a tin oxide film doped with fluorine.
O2, ZnO, and 5b203teal are preferred.
また本発明において、チタン、亜鉛、及ヒアンチモンの
酸化物、またはそれらの混合酸化物からなる透明膜の厚
みは水素プラズマに耐えることと被膜の断面方向の抵抗
値を小さくするため、ｓｏＸ乃至２００ｋにすることが
好ましい。In addition, in the present invention, the thickness of the transparent film made of oxides of titanium, zinc, and antimony, or mixed oxides thereof is set to soX or 200k in order to withstand hydrogen plasma and to reduce the resistance value in the cross-sectional direction of the film. It is preferable to do so.
本発明のフッ素をドープした酸化錫膜はスパッタリング
法、イオンブレーティング法、スプレー熱分解法、及び
ＣＶＤ法のいずれでも形成でき、低抵抗で、且つ高透明
性を得るには常圧ＣＶＤ法で形成するのが好ましい。The fluorine-doped tin oxide film of the present invention can be formed by any of the sputtering method, ion blating method, spray pyrolysis method, and CVD method, and the atmospheric pressure CVD method is used to obtain low resistance and high transparency. It is preferable to form.
常圧ＣＶＤ法によりフッ素をドープした酸化錫膜の形成
に用いることのできる銅原料としては３ｎＣ１４＋Ｏ４
Ｈｇ５ｎＣ１！３１ （ＯＨ：３）２ＳｎＣ１２１（Ｃ
ｎＨｚｎ＋１）４Ｓｎ（ｎ−／Ｑ−’Ｉ ） ｒ （Ｏ
Ｈ３）２ＳｎＨ２ｒ （Ｃ４Ｈ９） ３ｓｎＨおヨヒ（
Ｃ４Ｈ９＞２Ｓｎ（Ｃ００ＣＨ３）２等の錫化合物を用
いることができ、ドーパントとしては、ＣＨ３０ＨＦ２
＋ＣＨ３ＣＣ／Ｆ２．ＣＨＣｌＦ２．ＣＨＦ３ 、ＣＦ
２Ｃｊｉ’２．ＣＦ３Ｃｌ、ＣＦ３Ｂｒ等を用いること
ができる。The copper raw material that can be used to form a fluorine-doped tin oxide film by atmospheric pressure CVD is 3nC14+O4.
Hg5nC1!31 (OH:3)2SnC121(C
nHzn+1)4Sn(n-/Q-'I) r (O
H3) 2SnH2r (C4H9) 3snH Oyohi (
A tin compound such as C4H9>2Sn(C00CH3)2 can be used, and as a dopant, CH30HF2
+CH3CC/F2. CHClF2. CHF3, CF
2Cji'2. CF3Cl, CF3Br, etc. can be used.
本発明中のＴｉＯ２、ＺｎＯまたはＳｂ２Ｏ３膜（これ
らをＭｅＯＸ膜と総称する）の形成法としては、蒸着法
、スパッタリング法、スプレー法、ＣｖＤ法等イずれの
方法でもよい。また、ＭｅＯＸ膜に微量の不純物を混入
させ、比抵抗を小さくしたもの、例えばＺｎＯ膜にＡｌ
ｌ Ｉｎ等の３価の不純物を混入したものを用いるこ
とができる。The TiO2, ZnO, or Sb2O3 film (collectively referred to as MeOX film) in the present invention may be formed by any method such as vapor deposition, sputtering, spraying, or CvD. In addition, a small amount of impurity is mixed into the MeOX film to reduce the specific resistance, for example, a ZnO film with Al
A material mixed with a trivalent impurity such as lIn can be used.
本発明は酸化錫を主成分とする透明導電膜上にチタン、
亜鉛、及びアンチモンのいずれかの酸化物、またはそれ
らの混合酸化物からなる透明膜を形成したものであるの
で、該透明膜上にａ−Ｓｉ膜を形成する際の水素プラズ
マによる該透明導電膜の劣化を該透明膜により防ぐこと
ができる。The present invention uses titanium on a transparent conductive film whose main component is tin oxide.
Since a transparent film is formed from an oxide of either zinc or antimony, or a mixed oxide thereof, the transparent conductive film is formed by hydrogen plasma when forming an a-Si film on the transparent film. can be prevented from deteriorating by the transparent film.
大きさがｊＯ（馴）×！ＱＣ馴）、厚味へ／（朋）の酸
化珪素被膜付ソーダライムガラスを十分に洗浄、乾燥し
、ガラス基板とした。The size is jO (familiar) ×! Soda lime glass with a silicon oxide coating was thoroughly washed and dried to prepare a glass substrate.
このガラス基板上に以下のようにして、透明導電膜を形
成した。A transparent conductive film was formed on this glass substrate in the following manner.
四塩化錫（無水）の蒸気、水蒸気、酸素ガス、へ／−ジ
フルオロエタンガスおよび窒素ガスの調整された混合気
体を用い、ＣＶＤ法により５５０℃に加へされたガラス
基板上にフッ素をドープした５ｎ０２ ｍ （以下５ｎ
０２： ｌｉ’膜）を形成した。得られた５ｎ０２ ：
Ｆ膜の厚みは２０００Ｘであった。Fluorine-doped 5n02 was prepared on a glass substrate heated to 550°C by CVD using a controlled gas mixture of tin tetrachloride (anhydrous) vapor, water vapor, oxygen gas, difluoroethane gas, and nitrogen gas. m (hereinafter 5n
02: li' film) was formed. Obtained 5n02:
The thickness of the F film was 2000X.
この５ｎ０２：Ｆ膜を堆積させたガラスを室温まで徐冷
した後５ｎ０２：Ｆ膜上に電子ビーム＆ａ法を用いてＭ
ｅＱＸ膜を形成した。蒸着時の真空度は１Ｏ−６Ｔｏｒ
ｒ以下であり、得られたＭｅＯｘ膜の厚みは約ｊ□Ａで
あった。これら３種の試料を以下ＴｉＯ２／５ｎｏ２：
Ｆ ＋ ＺｎＯ／５ｎ０２ ：Ｆ ＋ ５ｂ２０３／５
ｎ０２ ：ｌｉ’ 二層膜と呼ぶ。After slowly cooling the glass on which the 5n02:F film was deposited to room temperature, M
An eQX film was formed. The degree of vacuum during vapor deposition is 1O-6 Torr.
r or less, and the thickness of the obtained MeOx film was approximately j□A. These three types of samples are as follows: TiO2/5no2:
F + ZnO/5n02 :F + 5b203/5
n02 :li' It is called a two-layer film.
また、比較のために、ＭｅＯＸ膜を形成しない厚み２０
００Ａの５ｎ０２ ： Ｆ膜（以下５ｎ０２：Ｆ＊層膜
と呼ぶ）を上記と同様の方法で形成した。Also, for comparison, a thickness of 20
A 5n02:F film of 00A (hereinafter referred to as 5n02:F* layer film) was formed in the same manner as above.
これら４種類の試料を平行平板型プラズマＣＶＤ装置に
より圧力ｊ ＴＯｒｒ 、放ｗｉｔ力密度０．６０”ｌ
ｉ／ｃｄ。These four types of samples were heated using a parallel plate plasma CVD apparatus at a pressure of j TOrr and a force density of 0.60"l.
i/cd.
基板温度Ｊ ００”Ｃの条件下で、水素プラズマにさら
した。放電時間を変え、試料の可視光透過率を測定した
。また、３０秒の放電前後における面積抵抗を測定した
。The sample was exposed to hydrogen plasma at a substrate temperature of J 00''C. The visible light transmittance of the sample was measured while varying the discharge time. Also, the sheet resistance before and after 30 seconds of discharge was measured.
夫々の測定結果を、第１図及び第１表に示す。The respective measurement results are shown in FIG. 1 and Table 1.
第１表
以上の結果により、本発明による透明導電体は従来のも
のに比べ水素プラズマによる可視光透過率の減少、およ
び面積抵抗増加の度合いが小さい。According to the results shown in Table 1 and above, the transparent conductor according to the present invention has a smaller decrease in visible light transmittance due to hydrogen plasma and a smaller increase in sheet resistance than conventional ones.
本発明によれば実施例からも明らかなとおり、耐プラズ
マ性に優れた透明導電膜を得ることができる。According to the present invention, as is clear from the Examples, a transparent conductive film having excellent plasma resistance can be obtained.
また本発明は、太陽電池用透明導電極として好適なもの
であることが明らかである。Moreover, it is clear that the present invention is suitable as a transparent conductive electrode for solar cells.
第１図は本発明の透明導電体と比較例との水素プラズマ
に遍したときの可視光透過率の変化を示す図である。FIG. 1 is a diagram showing changes in visible light transmittance of the transparent conductor of the present invention and a comparative example when exposed to hydrogen plasma.
Claims (4)
錫を主成分とする透明導電膜と、該透明導電膜上に形成
されたチタン、亜鉛、及びアンチモンのいずれかの酸化
物、またはそれらの混合酸化物からなる透明膜とからな
る透明導電体。(1) a transparent substrate, a transparent conductive film mainly composed of tin oxide formed on the surface of the transparent substrate, and an oxide of titanium, zinc, or antimony formed on the transparent conductive film; or a transparent conductor made of a transparent film made of a mixed oxide thereof.
プした酸化錫膜である特許請求の範囲第１項に記載の透
明導電体。(2) The transparent conductor according to claim 1, wherein the transparent conductive film is mainly composed of tin oxide and is a tin oxide film doped with fluorine.
物がＴｉＯ＿２、ＺｎＯ、及びＳｂ＿２Ｏ＿３である特
許請求の範囲第１項または第２項に記載の透明導電体。(3) The transparent conductor according to claim 1 or 2, wherein the respective oxides of titanium, zinc, and antimony are TiO_2, ZnO, and Sb_2O_3.
たはそれらの混合酸化物からなる透明膜の厚みが５０Å
乃至２００Åである特許請求の範囲第１項乃至第３項の
いずれかの透明導電体。(4) The thickness of the transparent film made of oxides of titanium, zinc, and antimony, or mixed oxides thereof is 50 Å.
The transparent conductor according to any one of claims 1 to 3, which has a thickness of 200 Å to 200 Å.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61225351A JPH0734329B2 (en) | 1986-09-24 | 1986-09-24 | Transparent conductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61225351A JPH0734329B2 (en) | 1986-09-24 | 1986-09-24 | Transparent conductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6380413A true JPS6380413A (en) | 1988-04-11 |
| JPH0734329B2 JPH0734329B2 (en) | 1995-04-12 |
Family
ID=16827977
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61225351A Expired - Lifetime JPH0734329B2 (en) | 1986-09-24 | 1986-09-24 | Transparent conductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0734329B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005027229A1 (en) * | 2003-08-29 | 2005-03-24 | Asahi Glass Company, Limited | Base with transparent conductive film and method for producing same |
| JP2005244073A (en) * | 2004-02-27 | 2005-09-08 | National Institute Of Advanced Industrial & Technology | Solar cell and method for manufacturing the same |
| JP4516657B2 (en) * | 1999-06-18 | 2010-08-04 | 日本板硝子株式会社 | SUBSTRATE FOR PHOTOELECTRIC CONVERSION DEVICE, ITS MANUFACTURING METHOD, AND PHOTOELECTRIC CONVERSION DEVICE USING THE SAME |
| JP2021012948A (en) * | 2019-07-05 | 2021-02-04 | Ａｇｃ株式会社 | Transparent electrode substrate and solar battery |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6733889B2 (en) † | 2002-05-14 | 2004-05-11 | Pilkington North America, Inc. | Reflective, solar control coated glass article |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59149607A (en) * | 1983-02-15 | 1984-08-27 | 松下電器産業株式会社 | Transparent electrode |
-
1986
- 1986-09-24 JP JP61225351A patent/JPH0734329B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59149607A (en) * | 1983-02-15 | 1984-08-27 | 松下電器産業株式会社 | Transparent electrode |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4516657B2 (en) * | 1999-06-18 | 2010-08-04 | 日本板硝子株式会社 | SUBSTRATE FOR PHOTOELECTRIC CONVERSION DEVICE, ITS MANUFACTURING METHOD, AND PHOTOELECTRIC CONVERSION DEVICE USING THE SAME |
| WO2005027229A1 (en) * | 2003-08-29 | 2005-03-24 | Asahi Glass Company, Limited | Base with transparent conductive film and method for producing same |
| JP2005244073A (en) * | 2004-02-27 | 2005-09-08 | National Institute Of Advanced Industrial & Technology | Solar cell and method for manufacturing the same |
| JP2021012948A (en) * | 2019-07-05 | 2021-02-04 | Ａｇｃ株式会社 | Transparent electrode substrate and solar battery |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0734329B2 (en) | 1995-04-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Manifacier et al. | Deposition of In2O3 SnO2 layers on glass substrates using a spraying method | |
| US5045235A (en) | Transparent conductive film | |
| JPS6215496B2 (en) | ||
| JPS63184210A (en) | Manufacture of transparent conductor | |
| JPH02503615A (en) | Substrate for solar cells | |
| WO1990011247A1 (en) | Zinc oxyfluoride transparent conductor | |
| JPS61227946A (en) | Electroconductive glass | |
| JPH07105166B2 (en) | Fluorine-doped tin oxide film and method for reducing resistance thereof | |
| JPS6380413A (en) | Transparent conductor | |
| JP3834339B2 (en) | Transparent conductive film and method for producing the same | |
| JPH07131044A (en) | Transparent conductive substrate | |
| JPS6389657A (en) | Electrically conductive transparent film | |
| JPH01227307A (en) | Transparent electric conductor | |
| JP2849388B2 (en) | Multilayer conductive film | |
| JP2568079B2 (en) | Method for forming tin oxide transparent conductive film | |
| JPH0733301Y2 (en) | Photoelectric conversion device | |
| JPS62213281A (en) | Transparent conductive film | |
| EP0148608B1 (en) | Film-forming composition comprising indium and tin compounds | |
| JPH0878714A (en) | Photoelectromotive device and manufacture of photoelectromotive device | |
| JP2853125B2 (en) | Method for producing transparent conductive film | |
| JPS6230148B2 (en) | ||
| JPH04341707A (en) | Transparent conductive film | |
| JPS6269405A (en) | Transparent conductive substrate for photoelectric element | |
| JPS62211966A (en) | Transparent conductive film | |
| JPH07112076B2 (en) | Transparent conductive film body having a two-layer structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |