JPS6378551A - Wiring connection - Google Patents
Wiring connectionInfo
- Publication number
- JPS6378551A JPS6378551A JP22183786A JP22183786A JPS6378551A JP S6378551 A JPS6378551 A JP S6378551A JP 22183786 A JP22183786 A JP 22183786A JP 22183786 A JP22183786 A JP 22183786A JP S6378551 A JPS6378551 A JP S6378551A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- laser
- stage
- stepped
- section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 26
- 238000001182 laser chemical vapour deposition Methods 0.000 claims abstract description 9
- 230000003247 decreasing effect Effects 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 9
- 238000012545 processing Methods 0.000 abstract description 8
- 238000013459 approach Methods 0.000 abstract description 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract 2
- 238000010586 diagram Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、 ＩＣやＬＳＩなどの半導体装置の配線をレ
ーザＣＶＤにより接続する方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for connecting wiring of semiconductor devices such as ICs and LSIs by laser CVD.
半導体装置の修正２局部的検査、設計変更などを半なう
には、半導体装置内の任意の配線同志を接続する必要が
ある。近年、レーザＣＶＤ （ＣｈｅｍｉｃａｌＶａｐ
ｏｒ Ｄｇｐｏｚｉｔｉ ｏｎ ）が上記配線接続に応
用されだした。半導体装置上は１例えば第２図に示すと
と（Ｓｉなどの基板上にＳ ｉ ０１などの絶縁膜５．
ＡＥなどの配線４ ＋ Ｓ＊０１などの保護膜５が順次
形成されている。上記レーザＣＶＤで配線４α、ｄｊ間
を接続する場合には、エツチング加工などにより、保護
膜５に穴６α、６ｂを形成して配線４α、４ｂの一部を
露出させる。しかる後に、 ＡＡ （ＣＨｓ ）ｊ 、
ｃｄ （（：１ｌｊ）ｔ 。Modification of Semiconductor Devices In order to perform local inspections, design changes, etc., it is necessary to connect arbitrary wires within the semiconductor device. In recent years, laser CVD (Chemical Vap
or Dgposition) has begun to be applied to the above-mentioned wiring connections. For example, as shown in FIG. 2, an insulating film 5.
A wiring 4 such as AE + a protective film 5 such as S*01 are sequentially formed. When connecting the wirings 4α, dj by the laser CVD, holes 6α, 6b are formed in the protective film 5 by etching or the like to expose a part of the wirings 4α, 4b. After that, AA (CHs)j,
cd ((:1lj)t.
Ｎｏ （Ｃｏ ） ６ 、およびｖ （ｃｏ ）ａなど
の材料ガス雰囲気中に半導体装置１を置き、穴６αから
６ｂ （配線４αからａｈ ）までレーザ光７を照射す
る。これにより上記材料ガスは分解し、 ＡＥ 、 Ｃ
ｄ 、 ＮｏおよびＷなどの金属膜８を析出する（第２
図（ｂ））。穴６ｈまで達したらレーザ光７の照射を停
止する。以上の工程により、配線４α、４６間は接続さ
れる（第２・図（Ｃ））。The semiconductor device 1 is placed in an atmosphere of material gases such as No (Co) 6 and v (co)a, and the laser beam 7 is irradiated from the holes 6α to 6b (from the wirings 4α to ah). As a result, the above material gas is decomposed and becomes AE, C
d, deposit a metal film 8 such as No and W (second
Figure (b)). When reaching the hole 6h, the irradiation of the laser beam 7 is stopped. Through the above steps, the wirings 4α and 46 are connected (FIG. 2 (C)).
なお、この種の方法に関連するものとしては。In addition, as related to this type of method:
エクステンデッド アプストラクツ オン ザ１７ス
コンファレンス オン ンリッド ステート デバイシ
ーズ アンド マティアリアルズ。Extended Abstracts on the 17th
Conference on Lid State Devices and Materials.
東京、 １９８５年、第１９６頁から第１９６頁（Ｅｓ
：ｔｅｎｄａｄＡｂｚｔｒｕｃｔｚ ｏｆ ｔｈｅ
１７ｔｈ Ｃｏｎｆａｒｍｎｃｇ ｏｎ ５ｏｌｉ
ｄＳｔａｔｅ Ｄａｖｉｃｇｚ ａｎｄ ＡＩａｔ
ｇｒｉａＬｚ 、Ｔｏｋｙｏ 、＋９８５ 。Tokyo, 1985, pp. 196-196 (Es.
：tendadAbztructz of the
17th Confarmncg on 5oli
dState Davidcgz and AIat
griaLz, Tokyo, +985.
ｐｐ １９５−１９６ ）において論じられている。pp. 195-196).
しかし、上記従来技術では表面が平担な基板上に一定走
査速度でレーザ光を照射し、金属膜を形成することが論
じられているのみである。すなわち１通常の半導体装置
は、第２図で示したように配線、絶縁膜および保護膜が
形成されており１表面は数μｍの凹凸がある。このため
、配線を接続すべき２点間でレーザ光を一定速度で走査
させたのでは、第３図（α）に示すスパッタ蒸着による
膜上では段差部の膜厚Ｔ、が平担部の膜厚Ｔ、に比べ小
さく抵抗値が犬きくなり、第３図（ｂ）に示すＣＶＤ膜
上では段差部での勾配が急峻のため段差部で断線を起こ
しやすいという問題がある。However, the above-mentioned prior art only discusses forming a metal film by irradiating a substrate with a flat surface with a laser beam at a constant scanning speed. That is, as shown in FIG. 2, a typical semiconductor device has wiring, an insulating film, and a protective film formed thereon, and its surface has irregularities of several μm. For this reason, if the laser beam is scanned at a constant speed between two points where the wiring is to be connected, the film thickness T at the step part will be different from that at the flat part on the sputter-deposited film shown in Fig. 3 (α). The resistance value is small compared to the film thickness T, and the CVD film shown in FIG. 3(b) has a steep slope at the stepped portion, so there is a problem that wire breakage is likely to occur at the stepped portion.
本発明の目的は、接続すべき配線膜を上記断線や高抵抗
とならないように形成し、配線接続の信頼性を高めるこ
とにある。An object of the present invention is to form a wiring film to be connected so as to prevent the above-mentioned disconnection or high resistance, and to improve the reliability of wiring connection.
上記目的は、レーザ光の走査方向における半導体装置表
面の凹凸をレーザ光走査に先立ち、接触式段差測定法に
より測定し、レーザ光が上記凹凸の段差部分に接近ある
いは到達したところで、レーザ照射制御手段を用いてレ
ーザ光の照射パワーを上げるかあるいは走査速度を下げ
ることにより達成される。The above purpose is to measure the unevenness on the surface of a semiconductor device in the scanning direction of the laser beam by a contact step measurement method prior to laser beam scanning, and when the laser beam approaches or reaches the step part of the unevenness, the laser irradiation control means This can be achieved by increasing the irradiation power of the laser beam or decreasing the scanning speed.
本発明において、凹凸測定手段は電気マイクロメータや
接触式段差測定器であり、測定結果分し゛−ザ照射の制
御手段に送る。レーザ照射制御手段は１段差部に照射す
るレーザ光のエネルギを平担部よりも太きくする。すな
わち、照射パワーを上げるか、走査速度を小さくする。In the present invention, the unevenness measuring means is an electric micrometer or a contact type height difference measuring device, and the measurement results are sent to the laser irradiation control means. The laser irradiation control means makes the energy of the laser beam irradiated on the one step portion larger than that on the flat portion. That is, the irradiation power is increased or the scanning speed is decreased.
これにより、配線金属膜の膜厚は、第４図に示すごとく
厚くなる（第４図は、 ＡｒレーザＳｉ基板上に照射し
、ＭｏＣＣ０）ｓからＮｏ膜を析出させた結果を示す）
ため、段差部で膜の抵抗が大きくなったり。As a result, the thickness of the wiring metal film increases as shown in Fig. 4 (Fig. 4 shows the result of irradiating an Ar laser onto a Si substrate and depositing a No film from MoCC0)s.
Therefore, the resistance of the membrane increases at the step part.
断線するのを防止することができる。This can prevent wire breakage.
以下、本発明の実施例を図に基すいて説明する。 Embodiments of the present invention will be described below with reference to the drawings.
第１図は１本発明に用いる装置の一態様であり。FIG. 1 shows one embodiment of the apparatus used in the present invention.
半導体装置表面の凹凸を位置とともに計測しながらメモ
リする段差測定部、レーザ光および観察光を半導体装置
に照射するための光学系、レーザ光の照射条件を制御す
るためのレーザ照射制御部。A step measurement unit that measures and stores the unevenness on the surface of a semiconductor device along with its position, an optical system that irradiates the semiconductor device with laser light and observation light, and a laser irradiation control unit that controls the irradiation conditions of the laser light.
およびレーザＣＶＤを行なうためのチャンバ部より構成
される。チャンバ部は、内部に半導体装置１を載置した
Ｘ−Ｙステージ１０を有し、レーザ光７および観察光１
２を導入の窓１３を有したチャンバ１１とＣＶＤガス供
給装置、真空排気装置（図示せず）とで構成される。１
４は半導体装置１の段差を測定する測定器であり、接触
針１５により数ｊオーダでの段差測定を行なう。１６は
Ｘ−Ｙステージ１０上に固定の反射鏡であり、干渉計１
７．レーザ測長器１８によりＸ−Ｙステージ１０の移動
量を測長する。１９は前記段差測定器１４およびレーザ
測長器１８からのデータを処理・記憶するデータ処理装
置である。and a chamber section for performing laser CVD. The chamber section has an X-Y stage 10 on which a semiconductor device 1 is mounted, and a laser beam 7 and an observation beam 1.
2 is composed of a chamber 11 having an introduction window 13, a CVD gas supply device, and a vacuum evacuation device (not shown). 1
Reference numeral 4 denotes a measuring device for measuring the level difference of the semiconductor device 1, and the contact needle 15 measures the level difference on the order of several j. 16 is a reflecting mirror fixed on the X-Y stage 10, and the interferometer 1
7. The distance of movement of the X-Y stage 10 is measured by the laser length measuring device 18 . A data processing device 19 processes and stores data from the step measuring device 14 and the laser length measuring device 18.
２０は前記データ処理装置１９のデータにより、レーザ
源２１からのレーザ光７をＯＮ −ＯＦＦするシャッタ
２２．光量を調整する透過率可変フィルタ２３．および
Ｘ−Ｙステージ１０の駆動モータ２４を制御する制御装
置である。A shutter 22.20 turns on and off the laser beam 7 from the laser source 21 according to data from the data processing device 19. Variable transmittance filter 23 that adjusts the amount of light. and a control device that controls the drive motor 24 of the XY stage 10.
２５はレーザ光位置と一致し、半導体装置１の位置決め
、観察を行なうのに用いる観察光学系のランプハウス、
２６は観察装置である。25 is a lamp house of an observation optical system that coincides with the laser beam position and is used for positioning and observing the semiconductor device 1;
26 is an observation device.
以上の構成において、まず半導体装置１表面の凹凸測定
について説明する。Ｘ−Ｙステージ１０上に載置の半導
体装置１を段差測定器１４の下に移動し、第５図に示す
様に表面上で接触針１５を駆動し原点位置パターン９を
検出することにより、レーザ測長器１Ｂの測長距離をＯ
にクリアする。ところで、半導体装置の修正、設計変更
等に伴なう配線形成を行なう場合には、第２図に示す修
正箇所（６α１６ｈ１８）の座標は既に明らかになって
おり、従って、前記原点位置検出後は、この座標位置に
従ってＸ−Ｙステージ１０を移動する。この時、第５図
（α）に示す様に接触針１５は半導体装置１０表面保護
膜５上を移動し、レーザ測長器１８の座標位置に対する
段差測定器１４の出力値（第５図（６））をデータ処理
装置１９に送る。データ処理装置内では微小距離ΔＸに
対して対応する段差の差が所定の値、εを越える場合、
すなわち。In the above configuration, measurement of irregularities on the surface of the semiconductor device 1 will be described first. By moving the semiconductor device 1 placed on the X-Y stage 10 under the step measuring device 14 and driving the contact needle 15 on the surface as shown in FIG. 5 to detect the origin position pattern 9, Set the measuring distance of laser length measuring device 1B to O.
Clear to. By the way, when wiring is to be formed due to modification or design change of a semiconductor device, the coordinates of the modification location (6α16h18) shown in FIG. 2 are already known. , the XY stage 10 is moved according to this coordinate position. At this time, the contact needle 15 moves on the surface protection film 5 of the semiconductor device 10 as shown in FIG. 6)) is sent to the data processing device 19. In the data processing device, if the difference in level corresponding to the minute distance ΔX exceeds a predetermined value, ε,
Namely.
１ｈ（ｘ＋Δｘ＞−ｈ＜ｘ＞＋＞ｔ
を満す位置データを段差値を記憶する。この結果から１
表面保護膜５の傾斜部Ｘ、−Ｘ、、Ｘ、−Ｘ４．および
Ｘ、 −Ｘ、等を抽出し、これらのデータを制御装置２
０へ送る。1h(x+Δx>-h<x>+>t The step value is stored. From this result, 1
Inclined portions X, -X, , X, -X4 of the surface protection film 5. and X, -X, etc., and send these data to the control device 2.
Send to 0.
次に、上記データをもとに、配線８の形成について説明
する。表面保護膜５の凹凸を測定後の半導体装置１をＸ
−Ｙステージ１０をモータ２４で駆動することによりレ
ーザＣＶＤ処理部に移動する。ランプハウス２５からの
観察光１２を用いて観察装置２６により、接触針１５の
原点位置パター、ン９を同様に用いることで原点位置決
めを行なりた後、修正箇所（６ａ、６ｂ、８ ）にｘ−
ｙスｙ−ジ１０を移動させる。Next, the formation of the wiring 8 will be explained based on the above data. The semiconductor device 1 after measuring the unevenness of the surface protection film 5 is
- The Y stage 10 is driven by the motor 24 to move to the laser CVD processing section. The origin position pattern of the contact needle 15 is determined by the observation device 26 using the observation light 12 from the lamp house 25, and the origin position is determined by using the pattern 9 in the same manner. x-
y-move the y-ji 10.
しかる後にＣＶＤ４７分供給する。レーザ光７の照射は
制御装置２０からのシャッタ２２開閉指令により行なう
が、前述のデータ処理装置１９からの半導体装置１表Ｍ
凹凸データにともない、傾斜部Ｘ、 −Ｘｔｘ、 −ｘ
４． ｘ、−Ｘａ等では照射パワーを変える（傾斜部で
は照射パワーをＰｔからＰｌに大きくする。第５図（ｃ
））、あるいは、走査速度を変える（傾斜部では走査速
度を５１からＳ、に小さくする。第５図（１１り ）
Ｋより傾斜部でのレーザの照射パワーを大きくすること
ができる。なお、実際には、レーザ照射の余裕を考慮し
て傾斜部の前後に所定距離δを付加している。After that, CVD was supplied for 47 minutes. Irradiation of the laser beam 7 is performed by commands to open and close the shutter 22 from the control device 20, but the semiconductor device 1 table M from the data processing device 19 described above is
According to the unevenness data, the slope part X, -Xtx, -x
4. For x, -Xa, etc., the irradiation power is changed (at the inclined part, the irradiation power is increased from Pt to Pl.
)) or change the scanning speed (at the slope, reduce the scanning speed from 51 to S). Figure 5 (11)
The laser irradiation power at the inclined portion can be made larger than K. Note that, in practice, a predetermined distance δ is added before and after the inclined portion in consideration of margin for laser irradiation.
この結果、傾斜部でも充分厚い膜、すなわち。This results in a film that is sufficiently thick even on the slopes, ie.
ステップカバレジの改善がなされ、抵抗値の増大および
断線などの問題がなくなる。Step coverage is improved, and problems such as increased resistance and disconnection are eliminated.
なお、ここでは、１軸方向について説明したが直交する
軸方向についても同様の結果が得られることは言うまで
もない。It should be noted that, although the description has been made in one axial direction, it goes without saying that similar results can be obtained in the orthogonal axial directions.
〔発明の効果〕
本発明によれば、レーザＣＶＤで配線を追加形成して半
導体装置内の配線を接続する際、半導体装置表面の段差
を直接測定し１段差部でのレーザ光照射条件（照射パワ
ー、走査速度）を変えて、追加配線の析出膜厚を大きく
する様にしたので１段差部での断線や高抵抗化を防止で
き、接続の信頼性が大幅に向上する・[Effects of the Invention] According to the present invention, when additional wiring is formed by laser CVD to connect the wiring in the semiconductor device, the step on the surface of the semiconductor device is directly measured and the laser beam irradiation conditions (irradiation) at one step are determined. By changing the power and scanning speed) and increasing the deposited film thickness of the additional wiring, it is possible to prevent wire breakage and high resistance at one step difference, and greatly improve the reliability of the connection.
第１図は１本発明の一実施例の構成図、第２図は、配線
接続方法の説明図、第５図は従来技術における配線接続
方法の問題点の説明図、第４図はレーザＣＶＤにおける
レーザ照射条件と配線膜厚の関係を示すグラフ、第５図
は１本発明の配線形成手順を示す説明図である。
１・・・・・・・・・・・・半導体装置、 ４・・・
・・・・・・・・・配線７５・・・・・・・・・・・・
保護膜、 ７・・・・・・・・−・・レーザ光。
８・・・・・・・・−・・金属膜。
１０・・・・・−・・Ｘ−Ｙステージ。
１２・・・・・−・・観察光７ １４・・・・・・・
・・段差測定器。
＋８・・・・・・・・・レーザ測長器
１９・・・・・・・・・データ処理装置。
２０・・・・・・・・・制御装置、２１・・・・・−・
・レーザ光源代理人 弁理士 小 川 ＃ Ｊ ′
第１図
１２、観察光 １８ レーザプリ長話 ２１シ−
ザ兆球第４図
照喪ゴノでワ−（相文寸イａ）Fig. 1 is a block diagram of an embodiment of the present invention, Fig. 2 is an explanatory diagram of a wiring connection method, Fig. 5 is an explanatory diagram of problems in the wiring connection method in the prior art, and Fig. 4 is a laser CVD FIG. 5 is a graph showing the relationship between laser irradiation conditions and wiring film thickness, and FIG. 5 is an explanatory diagram showing the wiring forming procedure of the present invention. 1... Semiconductor device, 4...
・・・・・・・・・Wiring 75・・・・・・・・・・・・
Protective film, 7...... Laser light. 8・・・・・・・・・－・・・Metal film. 10...---X-Y stage. 12・・・・・・・・Observation light 7 14・・・・・・・
...Step measuring device. +8... Laser length measuring device 19... Data processing device. 20... Control device, 21...
・Laser light source agent Patent attorney Ogawa ＃J′
Figure 1 12, Observation light 18 Laser pre-long story 21 Sea
The 4th picture of the trillion ball
Claims (1)
の配線を接続する方法において、半導体装置表面の凹凸
を段差測定器により、半導体装置表面の凹凸位置と対応
する様に測定し、該凹凸の段差部ではレーザ光の照射パ
ワーを上げるかあるいは走査速度を下げて、前記段差部
に形成される接続のための配線膜厚を大きくする様にし
たことを特徴とする配線接続方法。1. In a method of connecting wiring within a semiconductor device by adding wiring using the laser CVD method, the unevenness on the surface of the semiconductor device is measured using a step measuring device so as to correspond to the position of the unevenness on the surface of the semiconductor device, and the unevenness is A wiring connection method characterized in that the irradiation power of the laser beam is increased or the scanning speed is decreased at the step portion to increase the thickness of the wiring film for connection formed at the step portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22183786A JPS6378551A (en) | 1986-09-22 | 1986-09-22 | Wiring connection |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22183786A JPS6378551A (en) | 1986-09-22 | 1986-09-22 | Wiring connection |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6378551A true JPS6378551A (en) | 1988-04-08 |
Family
ID=16772970
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22183786A Pending JPS6378551A (en) | 1986-09-22 | 1986-09-22 | Wiring connection |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6378551A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04348525A (en) * | 1991-05-27 | 1992-12-03 | Nec Corp | Interconnection forming apparatus |
| JP2009200373A (en) * | 2008-02-25 | 2009-09-03 | Sharp Corp | Manufacturing method of semiconductor device |
-
1986
- 1986-09-22 JP JP22183786A patent/JPS6378551A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04348525A (en) * | 1991-05-27 | 1992-12-03 | Nec Corp | Interconnection forming apparatus |
| JP2009200373A (en) * | 2008-02-25 | 2009-09-03 | Sharp Corp | Manufacturing method of semiconductor device |
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