JPS6376872A - Method for relieving internal stress of film - Google Patents
Method for relieving internal stress of filmInfo
- Publication number
- JPS6376872A JPS6376872A JP21791486A JP21791486A JPS6376872A JP S6376872 A JPS6376872 A JP S6376872A JP 21791486 A JP21791486 A JP 21791486A JP 21791486 A JP21791486 A JP 21791486A JP S6376872 A JPS6376872 A JP S6376872A
- Authority
- JP
- Japan
- Prior art keywords
- film
- stress
- internal stress
- deposited
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 31
- 150000002500 ions Chemical class 0.000 claims abstract description 29
- 238000004544 sputter deposition Methods 0.000 claims abstract description 27
- 229910052721 tungsten Inorganic materials 0.000 claims description 9
- 239000010937 tungsten Substances 0.000 claims description 9
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- -1 tungsten nitride Chemical class 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 3
- 229910052582 BN Inorganic materials 0.000 claims description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims 2
- 229910045601 alloy Inorganic materials 0.000 claims 2
- 230000008018 melting Effects 0.000 claims 2
- 150000002736 metal compounds Chemical class 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 6
- 238000010884 ion-beam technique Methods 0.000 abstract description 5
- 230000035882 stress Effects 0.000 description 68
- 238000000151 deposition Methods 0.000 description 28
- 230000008021 deposition Effects 0.000 description 23
- 239000007789 gas Substances 0.000 description 15
- 238000005468 ion implantation Methods 0.000 description 12
- 239000000203 mixture Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 239000012528 membrane Substances 0.000 description 7
- 230000001133 acceleration Effects 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 5
- 238000001552 radio frequency sputter deposition Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 238000011946 reduction process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 241000894007 species Species 0.000 description 2
- 241000257465 Echinoidea Species 0.000 description 1
- 238000001015 X-ray lithography Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- SYHGEUNFJIGTRX-UHFFFAOYSA-N methylenedioxypyrovalerone Chemical compound C=1C=C2OCOC2=CC=1C(=O)C(CCC)N1CCCC1 SYHGEUNFJIGTRX-UHFFFAOYSA-N 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、膜を堆積さＶた後に、加速させたイオンを注
入することによって膜の内部応力を低減する方法に関す
るものである。膜の内部応力を低減すること、並びに低
減さゼる過程で内部応力を所定の値に精密に制御するこ
とは、特に半導体集積回路、Ｘ線リソグラフィー用マス
ク等の製造に必須の技術であり、本発明はこのような利
用目的に適した応力低減の方法を実現、するものである
。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method of reducing internal stress in a film by implanting accelerated ions after the film has been deposited. Reducing the internal stress of a film and precisely controlling the internal stress to a predetermined value during the reduction process are essential technologies, especially in the production of semiconductor integrated circuits, masks for X-ray lithography, etc. The present invention realizes a stress reduction method suitable for such purposes of use.
「従来の技術」
基板表面に堆積させた膜は、一般に大きな内部応力を有
している。膜を堆積させる方法として、ＣＶＤ法および
スパッタ法が用いられることが多い。これらの方法で堆
積させた膜は、一般に大きな内部応力を残留させている
。ＣＶＤ法のなかでも、減圧および常圧ＣＶＤ法は熱反
応によって堆積を起こさせるため、これらの方法で堆積
さけた膜は、膜固有の内部応力のほかに熱応力も残留さ
けている。したがって、膜の堆積手段としては、低湿で
堆積が可能なプラズマＣＶＤ法およびスパッタ法が好ま
れている。低温で膜を堆積させることは、デバイス特性
維持のためにも必要である。"Prior Art" A film deposited on a substrate surface generally has a large internal stress. CVD and sputtering methods are often used to deposit films. Films deposited by these methods generally retain large residual internal stresses. Among the CVD methods, the low pressure and normal pressure CVD methods cause deposition by a thermal reaction, so that films deposited by these methods avoid residual thermal stress in addition to the internal stress inherent in the film. Therefore, the plasma CVD method and the sputtering method, which allow deposition at low humidity, are preferred as film deposition methods. Depositing films at low temperatures is also necessary to maintain device properties.
しかしながら、これらの低温堆積方法においでも、膜固
有の大きな内部応力が膜中に残留することは避けられな
い。However, even in these low-temperature deposition methods, it is inevitable that large internal stress inherent to the film remains in the film.
従来、膜の内部応力の低減化は、堆積時の堆積条件を変
化させることによって行われてきた。例えば、高周波ス
パッタ（以下ｒｆスパッターという）においてはスパッ
タガス圧力および高周波パワー等（以下ｒｆパワー等と
いう）の装置パラメーターを変化させることによって膜
応力を低減させてきた。プラズマＣＶＤ法においては、
ｒｆパワー、反応ガス組成、反応ガス圧力、堆積時の基
板温度等の装置パラメーターを変化させることによって
、膜応力を低減させてきた。Conventionally, the internal stress of a film has been reduced by changing the deposition conditions during deposition. For example, in high frequency sputtering (hereinafter referred to as RF sputtering), film stress has been reduced by changing equipment parameters such as sputtering gas pressure and high frequency power (hereinafter referred to as RF power, etc.). In the plasma CVD method,
Film stress has been reduced by varying equipment parameters such as rf power, reactant gas composition, reactant gas pressure, and substrate temperature during deposition.
しかし、堆積条件を変化させることによって膜の内部応
力を低減させる従来の方法には、次に述べる欠点があっ
た。その第一は、所定の内部応力を有する膜を、制御性
良くかつ再現性良く得ることが困難なことである。この
ことは、堆積条件を決定するパラメーターが複数個ある
ために、それぞれのパラメーターを最適化し、かつ堆積
条件を恒常的に一定に保つことが困難であることに起因
する。たとえば、熱ＣＶＤ法では、反応ガス組成および
堆積温度によって膜の内部応力が決定されるが、これら
の反応条件を一定に保つことが困難であるため所定の応
力を持つ脇を得ることは非常に難しい。プラズマＣＶＤ
法Ｊ３よびスパッタ法においては、プラズマ状態を恒常
的に一定に保持することが要求されるが、この要求を満
たすためには、ガス組成、ガス圧力、ｒｆパワーおよび
堆積温度等の堆積条件を常に一定に保たねばならない。However, the conventional method of reducing the internal stress of a film by changing the deposition conditions has the following drawbacks. The first problem is that it is difficult to obtain a film having a predetermined internal stress with good controllability and good reproducibility. This is because there are multiple parameters that determine the deposition conditions, and it is difficult to optimize each parameter and keep the deposition conditions constant. For example, in the thermal CVD method, the internal stress of the film is determined by the reaction gas composition and deposition temperature, but it is difficult to keep these reaction conditions constant, so it is very difficult to obtain a film with a predetermined stress. difficult. plasma CVD
In method J3 and sputtering, it is required to maintain a constant plasma state, but in order to meet this requirement, deposition conditions such as gas composition, gas pressure, RF power, and deposition temperature must be constantly adjusted. must be kept constant.
しかしながら、これらの堆積条件を一定に保つことは非
常に困難であり、したがってプラズマ状態を一定に保つ
ことは極めて難しい。プラズマ状態の変動は膜の内部応
力について良好な再現性が得られない原因となる。However, it is very difficult to keep these deposition conditions constant, and therefore it is extremely difficult to keep the plasma state constant. Fluctuations in the plasma state cause poor reproducibility of the internal stress in the film.
第二の欠点は、所定の応力を有する膜を得ようとすると
、所定の膜質を持つ膜が堆積条件の範囲で得られない場
合があることである。すなわら、所定の応力を持つ膜を
得るためには、膜の組成を変化させたり、あるいは膜構
造自体を変化させねばならない場合がある。膜組成を変
化させる例としては、プラズマＣＶＤ法において、窒化
けい素（ＳｉｘＮ、Ｈ□）を堆積させる場合、引っ張り
応力の小さな膜を得ようとするとＳｉを多く含んだ組成
としなければならないが、この場合には化学（Ｂ論に近
い組成（Ｓｉ３Ｎ４）を持ち、かつ小さな引っ張り応力
の膜を得ることはできない。また、膜構造自体を変化さ
せる例として、スパッタ法により堆積させた金属膜があ
げられる。スパッタ法は金属膜の堆積に広く用いられて
いる。しかしながら、スパッタ法で堆積させた金属膜は
一般に圧縮応力をもち、特に高融点金属膜およびその化
合物膜は、大きな圧縮応力を残留させている場合が多い
。応力を低減させるために堆積条件を変化させると、膜
構造が変化してしまうことが珍しくない。例えばスパッ
タ条件を適切に選択することによって、アモルファス状
態の窒化タングステン膜を堆積さけることができるが、
アモルファス状態の膜は１ｘ１０１０ｄｙｎ／Ｃ１２の
大きな圧縮応力を持つ。しかしながら、応力を低減させ
るためにスパッタ条件を変化さＶると結晶化してしまい
、アモルファス状態の膜を得ることはできない。The second drawback is that when attempting to obtain a film with a predetermined stress, a film with a predetermined film quality may not be obtained within the range of deposition conditions. That is, in order to obtain a film with a predetermined stress, it may be necessary to change the composition of the film or change the film structure itself. As an example of changing the film composition, when depositing silicon nitride (SixN, H□) in the plasma CVD method, in order to obtain a film with low tensile stress, the composition must contain a large amount of Si. In this case, it is impossible to obtain a film that has a composition (Si3N4) close to theory B and has a small tensile stress.Also, as an example of changing the film structure itself, a metal film deposited by sputtering is given. Sputtering is widely used for depositing metal films. However, metal films deposited by sputtering generally have compressive stress, and high-melting metal films and their compound films in particular have large residual compressive stress. It is not uncommon for the film structure to change when the deposition conditions are changed to reduce stress.For example, by appropriately selecting the sputtering conditions, it is possible to deposit a tungsten nitride film in an amorphous state. You can avoid it, but
The film in an amorphous state has a large compressive stress of 1×10 10 dyn/C 12 . However, if sputtering conditions are changed to reduce stress, crystallization occurs, making it impossible to obtain an amorphous film.
膜を堆積さＶた後に、アニーリングを行うことによって
も膜応力を低減させることができる。１ノかし、この方
法は制御性に乏しいうえに、アニーリングによって新た
にＩＦｊ質が変化したり、熱歪が生じるために実用性に
欠ける。Film stress can also be reduced by performing annealing after the film is deposited. However, this method is impractical because it has poor controllability, and additionally the IFj quality changes due to annealing and thermal distortion occurs.
［発明が解決（〕ようとする問題点］
上記のように、従来の方法は膜の堆積条件によって膜の
内部応力を制御するものであるため、制御性良く膜応力
を低減させることができない。また従来方法では、所定
の膜質を持ち、かつ所定の膜応力を持つ膜が得られると
は限らない。本発明の目的はこれら従来法の欠点を解消
し、低温で制御性および再現性良く膜の応力を所望の値
に低減させることができる方法を提供することにある。[Problems to be Solved by the Invention] As described above, the conventional method controls the internal stress of the film depending on the film deposition conditions, and therefore cannot reduce the film stress with good controllability. Furthermore, with conventional methods, it is not always possible to obtain a film with a predetermined film quality and a predetermined film stress.The purpose of the present invention is to eliminate the drawbacks of these conventional methods, and to form a film with good controllability and reproducibility at low temperatures. The object of the present invention is to provide a method that can reduce the stress of
［問題点を解決するための手段１
本発明は上記の目的を達成するためになされたものであ
って、１％板表面に堆積させた機に対し、加速したイオ
ンを注入するにより、膜の内部応力を低減さぼることを
特徴とする。[Means for Solving the Problems 1] The present invention has been made to achieve the above-mentioned object, and the present invention is made by implanting accelerated ions into a film deposited on the surface of a 1% plate. It is characterized by reducing internal stress.
本発明の方法は、堆積膜のすべてに適用可能であって、
そうした堆積膜の具体例としては、スパッタ法によって
ｉｆｔ積させたタングステン膜、タンタル膜、窒化タン
グステン膜および窒化タンタル膜のほか、プラズマＣＶ
Ｄ法によって堆積させた窒化珪素膜および窒化ホウ素膜
等を挙げることができる。The method of the present invention is applicable to all deposited films,
Specific examples of such deposited films include tungsten films, tantalum films, tungsten nitride films, and tantalum nitride films deposited by sputtering, as well as plasma CVD films.
Examples include a silicon nitride film and a boron nitride film deposited by the D method.
イオン注入はイオンビームを堆積膜に照射することで行
われ、イオンビーム発生機としては、たとえば、コツク
クロフトワルトン型加速鼎等が一般に使用される。ビー
ムのイオン種は任意に選択できるが、膜への不純物混入
を避ける意味で、膜の構成元素と同じイオン種を選ぶこ
とが好ましい。Ion implantation is performed by irradiating the deposited film with an ion beam, and as an ion beam generator, for example, a Kotscroft-Walton type accelerator or the like is generally used. Although the ion species of the beam can be selected arbitrarily, it is preferable to select the same ion species as the constituent elements of the film in order to avoid contamination of the film with impurities.
［作 用］
本発明は、大ぎな内部応力を有する膜にイオン注入を行
うと、膜の内部応力が低減づるという事実に基づく。[Function] The present invention is based on the fact that when ions are implanted into a film having a large internal stress, the internal stress of the film is reduced.
第１図は、本発明方法の概念図で、駐板１１に形成され
た堆積膜２にイオンビーム３が照射されている状況を示
す。膜中に注入されたイオンは、膜を構成する原子と衝
突し、エネルギーを失う過程におい“Ｃ，、膜の内部応
力を減少させる方向に膜の微視的状態を変化させる。こ
の作用によって膜内部の残留応力が低減する。本作用は
物理的であるため、大きな内部応力を残留させている膜
に広範囲に適用できる。特に有効であるのは、膜の厚さ
方向に対しでイオンの放出エネルＡニー分布が−・様に
なるよう、イオンのエネルギーを選択する場合である。FIG. 1 is a conceptual diagram of the method of the present invention, showing a situation where a deposited film 2 formed on a parking plate 11 is irradiated with an ion beam 3. The ions implanted into the film collide with the atoms that make up the film, and in the process of losing energy, they change the microscopic state of the film in a direction that reduces the internal stress of the film. Internal residual stress is reduced.Since this effect is physical, it can be applied to a wide range of films with large residual internal stress.It is particularly effective in the direction of the film thickness when releasing ions. This is a case where the energy of the ions is selected so that the energy A knee distribution becomes -.
このようにイオンのエネル１ニーを選択することによっ
て、膜の厚さ方向の応力分布を一様にすることができる
。By selecting the ion energy 1 in this manner, the stress distribution in the thickness direction of the film can be made uniform.
本発明の方法による応力減少の過程は、イオン注入量に
依存し、イオン電流に依存しない。したがって、膜応力
を低減させるために必要なパラメーターは一つであり、
またイオン注入量は精密に制御できる量であるために、
精密に応力の低減を行うことができる。また、低温で応
力を低減さぜるために熱歪も生じない。The process of stress reduction by the method of the present invention depends on the ion implantation dose and does not depend on the ion current. Therefore, only one parameter is necessary to reduce membrane stress,
In addition, since the amount of ion implantation can be precisely controlled,
Stress can be reduced precisely. Furthermore, since stress is reduced at low temperatures, thermal strain does not occur.
本方法を行うことによって、膜質をほとんど変化させる
ことなしに所定の応力にまで膜応力を低減させることが
できる。このため、膜形成に際しては、最適な膜質を得
るうえで必要な堆積条件を選択することができる。所定
の膜質を１９だ土で、イオン注入によって応力を減少さ
仕れば良い。すなわち、従来方法では１ｑることの困難
であった所定の膜質および所定の応力を共に満たした膜
を得ることができる。また、堆積条件の再現性の悪いこ
とに起因する膜応力のばらつきを、イオン注入によって
平均化さゼることもできる。さらに、膜応力を測定しつ
つ膜応力を低減させることも可能である。By carrying out this method, the film stress can be reduced to a predetermined stress without substantially changing the film quality. Therefore, when forming a film, it is possible to select the deposition conditions necessary to obtain the optimum film quality. The stress can be reduced by ion implantation with a predetermined film quality of 19%. That is, it is possible to obtain a film that satisfies both a predetermined film quality and a predetermined stress, which was difficult to achieve by conventional methods. Furthermore, variations in film stress caused by poor reproducibility of deposition conditions can be averaged out by ion implantation. Furthermore, it is also possible to reduce the membrane stress while measuring it.
［実施例］
＋１）Ｓｔ基板上にアモルファス窒化タングステン膜を
ｒｆスパッタによって形成した。スパッタガスは、アル
ゴン３９．０ｓｅｃｍ （標準状態ＣＣ／分）および窒
素７．６３ＣＣ１を混合して用いた。スパッタ条件は、
ｒｆパワー３００−スパッタガス圧力５ｍＴｏｒｒであ
る。堆積温度は室温である。膜厚は０．７０μｍであっ
た。次に膜表面の清浄化を行った後、室温で加速エネル
ギー４００ ｋｅＶイオン電流１０μへのＮ＋イオンを
注入した。第２図に示１ノたように、イオン注入前に１
．０７ｘｌＯ１０ｄｙｎ／Ｃｍ２の圧縮応力を持つ膜に
イオン注入を行った結果、注入量とともに応力が急激に
減少し７．５Ｘ１０１６ｉｏｎｓ／ａｍ２以上の注入量
において膜応力を零にすることができた。イオン注入に
よって°膜は結晶化することはない。上記の効果はＮｅ
１を注入した場合にも同様に得ることができた。[Example] +1) An amorphous tungsten nitride film was formed on a St substrate by RF sputtering. The sputtering gas used was a mixture of 39.0 sec of argon (CC/min under standard conditions) and 7.63 CC1 of nitrogen. The sputtering conditions are
The rf power was 300 and the sputtering gas pressure was 5 mTorr. The deposition temperature is room temperature. The film thickness was 0.70 μm. Next, after cleaning the membrane surface, N+ ions were implanted at room temperature with an acceleration energy of 400 keV and an ion current of 10μ. As shown in Figure 2, 1.
．． As a result of ion implantation into a film having a compressive stress of 07xlO10dyn/Cm2, the stress rapidly decreased with the implantation dose, and the film stress could be reduced to zero at an implantation dose of 7.5X1016ions/am2 or more. Ion implantation does not crystallize the film. The above effect is Ne
A similar result could be obtained when 1 was injected.
（２）ＳｉＬＪ板上にタングステン膜をｒｆスパッタに
よって形成した。スパッタガスはアルゴンを用いた。流
ｍは４５．０ｓｃｃ＋ｇである。スパッタ条件はｒｆパ
ワー５００賢、スパッタガス圧力５１ＴＯｒｒである。(2) A tungsten film was formed on the SiLJ plate by RF sputtering. Argon was used as the sputtering gas. The flow m is 45.0scc+g. The sputtering conditions were an RF power of 500 mm and a sputtering gas pressure of 51 TOrr.
堆積温度は室温である。膜厚は０．５５μｍであった。The deposition temperature is room temperature. The film thickness was 0.55 μm.
次に膜表面の清浄化を行った後、室温で加速エネルギー
４００ ｋｃＶイオン電流１０μＡのＮ＋イ、オンを注
入した。第３図に示したよウニイオン注入前ニ２．１１
ｘ１０１０ｄｙｎ／ｃｍ ２（７）圧縮応力を持つ膜に
イオンを注入を行い、応力を減少させることができた。Next, after cleaning the membrane surface, N + ion was implanted at room temperature with an acceleration energy of 400 kcV and an ion current of 10 μA. 2.11 Before implanting sea urchin ions as shown in Figure 3
x1010 dyn/cm 2 (7) By implanting ions into a film with compressive stress, the stress could be reduced.
、上記の結果はＮｅ”を注入した場合にも同様に得るこ
とができた。, the above results could be similarly obtained when Ne'' was implanted.
＋３１ＳｉＷ板上に窒化タンタル膜をｒｆスパッタによ
って形成した。スパッタガスは、アルゴン４４、０８Ｃ
Ｃ１１と窒素２．４ｓｅｃｍを混合して用いた。スパッ
タ条件は、ｒｆパワー５００Ｍ、スパッタガス圧力５ｍ
Ｔｏｒｒである。堆積温度は室温である。膜厚は０．６
２μ論であった。次に膜表面の清浄化を行った後、室温
で加速エネルギー４００ ｋｃＶ、イオン電流１０μへ
のＮ＋イオンを注入した。第４図に示したようにイオン
注入前に１．７２ｘ１０１０ｄｙｎ／ｃｍ２の圧縮応力
を持つ膜にイオン注入を行い、応力を急激に減少させる
ことができた。上記の結果はＮｅ＋を注入した場合にも
同様に得ることができた。A tantalum nitride film was formed on a +31SiW plate by RF sputtering. The sputtering gas is argon 44,08C.
A mixture of C11 and 2.4 sec of nitrogen was used. Sputtering conditions are RF power 500M, sputtering gas pressure 5m.
Torr. The deposition temperature is room temperature. Film thickness is 0.6
It was the 2μ theory. Next, after cleaning the membrane surface, N+ ions were implanted at room temperature with an acceleration energy of 400 kcV and an ion current of 10 μ. As shown in FIG. 4, ions were implanted into a film having a compressive stress of 1.72×10 10 dyn/cm 2 before ion implantation, and the stress could be rapidly reduced. The above results could be similarly obtained when Ne+ was injected.
＋４１ＳｉｉＪ板上にタンタル膜をｒｆスパッタによっ
て形成した。スパッタガスはアルゴンを用いた。流量は
４５．０ｓｅｃａである。スパッタ条件は、ｒｆパワー
３００Ｗ、スパッタガス圧力５ｍＴｏｒｒである。堆積
温度は室温である。膜厚は０６６５μｍであった。次に
膜表面の清浄化を行った後、室温で加速エネルギー４０
０ ｋｅＶ 、イオン電流１０μ＾のＮ＋イオンを注入
しｌζ。第５図に示したようにイオン注入前に１．３８
Ｘ１０１０ｄｙｎ／ｃｍ２の圧縮応力を持つ膜にイオン
注入を行い、応力を減少させることがＣさた。上記の結
果はＮｅ＋を注入した場合にも同様に得ることがでさた
。A tantalum film was formed on the +41SiiJ board by RF sputtering. Argon was used as the sputtering gas. The flow rate is 45.0 seca. The sputtering conditions were an RF power of 300 W and a sputtering gas pressure of 5 mTorr. The deposition temperature is room temperature. The film thickness was 0,665 μm. Next, after cleaning the membrane surface, the acceleration energy was 40°C at room temperature.
N+ ions were implanted at 0 keV and an ion current of 10 μ^. 1.38 before ion implantation as shown in Figure 5.
It was found that ions were implanted into a film having a compressive stress of X1010 dyn/cm2 to reduce the stress. The above results could be similarly obtained when Ne+ was injected.
ｆ５）Ｓｉ、ｌ板上にプラズマＣＶＤ法によってアモル
ファス５ｉＮＰＩＡを堆積させた。堆積条件は、Ｓ ｉ
ｌ−１４６，０ｓｅｃｎ、 Ｎ２９０．Ｏｓｃｃｍ、
ｒ ｆパワー１００Ｗ１堆積温度２００℃、反応ガス
圧力 １．０ｍ丁ｏｒｒである。膜厚は１．４μｍであ
った。次に膜表面の清浄化を行った後に室温で加速エネ
ルギー４００ ｋｅＶ 、イオン電流６μへのＮＯ＋イ
オンを注入した。第６図に示したようにイオン注入前に
３．３８ｘ１０９ｄｙｎ／ｃｍ２の引っ張り応力を持つ
膜にイオン注入を行った結果、注入けを増加させるとと
もに応力が急激に減少し、２．５Ｘ１０１６ｉｏｎｓ／
ｃｍ ２以上の注入量において、膜応力を１．０Ｏｘ１
０９ｄｙｎ／ｃｍ２以下ニマ”’Ｃ減少ｃ Ｌルコトが
できた。上記の結果はＮ４を注入した場合にも同様に得
ることができた。また、Ｓｔ＋−＋４ガスのかわりに［
３２１−１６ガスを用いることよって得られたアモルフ
ァスｌ−３Ｎについても、同様の結果を得ることができ
た。f5) Amorphous 5iNPIA was deposited on a Si, l plate by plasma CVD. The deposition conditions were S i
l-146,0secn, N290. Osccm,
The rf power was 100W, the deposition temperature was 200°C, and the reaction gas pressure was 1.0m orr. The film thickness was 1.4 μm. Next, after cleaning the membrane surface, NO + ions were implanted at room temperature with an acceleration energy of 400 keV and an ion current of 6 μ. As shown in Figure 6, as a result of ion implantation into a film that had a tensile stress of 3.38x109dyn/cm2 before ion implantation, the stress decreased rapidly as the implantation dose increased, and the stress decreased to 2.5x1016ions/cm2.
At an implantation dose of cm2 or more, the film stress is reduced to 1.0Ox1.
09 dyn/cm2 or less was obtained.The above results could be similarly obtained when N4 was injected.Also, instead of St+-+4 gas, [
Similar results were also obtained for amorphous 1-3N obtained by using 321-16 gas.
［発明の効果］
以上詳述したように、本発明の方法に従えば、膜質をほ
とんど変化させずに低温で膜応力を低減させ、かつ低減
化の過程において膜応力を制御することがぐきる。本発
明の方法は、精密に設定できるイオン注入Ｌ■によって
膜応力を制御できるため、再現性に優れ、原理的に制御
性が高い。[Effects of the Invention] As detailed above, according to the method of the present invention, it is possible to reduce the film stress at low temperatures with almost no change in film quality, and to control the film stress during the reduction process. . The method of the present invention has excellent reproducibility and high controllability in principle because the film stress can be controlled by ion implantation L which can be precisely set.
以上の理由により、本発明の方法は低温下で精密に膜応
力を低減することが要求される半導体集積回路およびＸ
線リソグラフィー用マスク等に適用すれば、著しい効果
が得られる。For the above reasons, the method of the present invention is applicable to semiconductor integrated circuits and
If applied to a mask for line lithography, etc., remarkable effects can be obtained.
第１図は本発明方法の概念図、第２図は実施例１におけ
る窒化タングステンの応力低減を表す図、第３図は実施
例２におけるタングステンの応力低減を表す図、第４図
は実施例３における窒化タンタルの応力低減を表す図、
第５図は実施例４におけるタンタルの応力低減を表す図
、第６図は実施例５における窒化珪素の応力低減を表す
図である。
１・・・基板、２・・・堆積膜、３・・・イオンビーム
。Figure 1 is a conceptual diagram of the method of the present invention, Figure 2 is a diagram showing stress reduction in tungsten nitride in Example 1, Figure 3 is a diagram showing stress reduction in tungsten in Example 2, and Figure 4 is an example A diagram representing the stress reduction of tantalum nitride in 3,
FIG. 5 is a diagram showing the stress reduction of tantalum in Example 4, and FIG. 6 is a diagram showing the stress reduction of silicon nitride in Example 5. 1...Substrate, 2...Deposited film, 3...Ion beam.
Claims (1)
によって膜の内部応力を低減させることを特徴とする膜
の内部応力低減方法。 ２ 特許請求の範囲第１項記載の方法であって、スパッ
タ法によって堆積させた膜であることを特徴とする膜の
内部応力低減方法。 ３ 特許請求の範囲第２項記載の方法であって、スパッ
タ法によって堆積させた金属膜であることを特徴とする
膜の内部応力低減方法。 ４ 特許請求の範囲第３項記載の方法であって、スパッ
タ法によって堆積させた膜が高融点金属膜（合金も含む
）または高融点金属の化合物膜であることを特徴とする
膜の内部応力低減方法。 ５ 特許請求の範囲第４項記載の方法であつて、上記膜
がタングステン、窒化タングステン、タンタル、窒化タ
ンタルおよびそれらの合金であることを特徴とする膜の
内部応力低減方法。 ６ 特許請求の範囲第１項記載の方法であつて、プラズ
マＣＶＤ法によつて堆積させた膜の内部応力低減方法。 ７ 特許請求の範囲第６項記載の方法であつて、上記膜
が窒化珪素膜および窒化ホウ素膜であることを特徴とす
る膜の内部応力低減方法。[Claims] 1. A method for reducing the internal stress of a film, which comprises reducing the internal stress of the film by implanting accelerated ions into the deposited film. 2. A method for reducing internal stress in a film, which is the method according to claim 1, characterized in that the film is deposited by sputtering. 3. A method for reducing internal stress in a film, which is a metal film deposited by sputtering, as claimed in claim 2. 4. The method according to claim 3, characterized in that the film deposited by sputtering is a high melting point metal film (including an alloy) or a high melting point metal compound film. Reduction method. 5. The method according to claim 4, wherein the film is made of tungsten, tungsten nitride, tantalum, tantalum nitride, or an alloy thereof. 6. A method according to claim 1, which reduces internal stress in a film deposited by plasma CVD. 7. A method for reducing internal stress in a film according to claim 6, wherein the film is a silicon nitride film or a boron nitride film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21791486A JPS6376872A (en) | 1986-09-18 | 1986-09-18 | Method for relieving internal stress of film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21791486A JPS6376872A (en) | 1986-09-18 | 1986-09-18 | Method for relieving internal stress of film |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62162670A Division JPS6376325A (en) | 1987-06-30 | 1987-06-30 | X-ray absorber film of mask for x-ray lithography |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6376872A true JPS6376872A (en) | 1988-04-07 |
| JPH049866B2 JPH049866B2 (en) | 1992-02-21 |
Family
ID=16711721
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21791486A Granted JPS6376872A (en) | 1986-09-18 | 1986-09-18 | Method for relieving internal stress of film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6376872A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0386786A2 (en) * | 1989-03-09 | 1990-09-12 | Canon Kabushiki Kaisha | X-ray mask structure, and x-ray exposure process |
| JPH0757739A (en) * | 1993-08-09 | 1995-03-03 | Agency Of Ind Science & Technol | Manufacture of fuel electrode for high temperature type fuel cell |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5466767A (en) * | 1977-11-08 | 1979-05-29 | Fujitsu Ltd | Manufacture for sos construction |
-
1986
- 1986-09-18 JP JP21791486A patent/JPS6376872A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5466767A (en) * | 1977-11-08 | 1979-05-29 | Fujitsu Ltd | Manufacture for sos construction |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0386786A2 (en) * | 1989-03-09 | 1990-09-12 | Canon Kabushiki Kaisha | X-ray mask structure, and x-ray exposure process |
| US5196283A (en) * | 1989-03-09 | 1993-03-23 | Canon Kabushiki Kaisha | X-ray mask structure, and x-ray exposure process |
| US5773177A (en) * | 1989-03-09 | 1998-06-30 | Canon Kabushiki Kaisha | X-ray mask structure, and X-ray exposure process |
| JPH0757739A (en) * | 1993-08-09 | 1995-03-03 | Agency Of Ind Science & Technol | Manufacture of fuel electrode for high temperature type fuel cell |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH049866B2 (en) | 1992-02-21 |
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