JPH03159978A - Method for forming metallic film onto ceramic surface by ion mixing method - Google Patents
Method for forming metallic film onto ceramic surface by ion mixing methodInfo
- Publication number
- JPH03159978A JPH03159978A JP29609189A JP29609189A JPH03159978A JP H03159978 A JPH03159978 A JP H03159978A JP 29609189 A JP29609189 A JP 29609189A JP 29609189 A JP29609189 A JP 29609189A JP H03159978 A JPH03159978 A JP H03159978A
- Authority
- JP
- Japan
- Prior art keywords
- metal
- ion beam
- ceramic substrate
- substrate
- ceramic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 77
- 238000000034 method Methods 0.000 title claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 85
- 229910052751 metal Inorganic materials 0.000 claims abstract description 65
- 239000002184 metal Substances 0.000 claims abstract description 64
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 53
- 239000010409 thin film Substances 0.000 claims abstract description 23
- 150000001875 compounds Chemical class 0.000 claims abstract description 11
- 239000010408 film Substances 0.000 claims description 36
- 238000001883 metal evaporation Methods 0.000 claims description 13
- 239000000470 constituent Substances 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 abstract description 9
- 238000001704 evaporation Methods 0.000 abstract description 4
- 230000008020 evaporation Effects 0.000 abstract description 3
- 239000004615 ingredient Substances 0.000 abstract 2
- 239000010949 copper Substances 0.000 description 43
- 229910052802 copper Inorganic materials 0.000 description 35
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 33
- 150000002500 ions Chemical class 0.000 description 24
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 10
- 239000010936 titanium Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 238000005259 measurement Methods 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 229910021645 metal ion Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 239000004005 microsphere Substances 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 229910052755 nonmetal Inorganic materials 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- JAWMENYCRQKKJY-UHFFFAOYSA-N [3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-ylmethyl)-1-oxa-2,8-diazaspiro[4.5]dec-2-en-8-yl]-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]methanone Chemical compound N1N=NC=2CN(CCC=21)CC1=NOC2(C1)CCN(CC2)C(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F JAWMENYCRQKKJY-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000002925 chemical effect Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Non-Insulated Conductors (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、イオンミキシング法によるセラミックス表面
への金属膜形成法に関し、更に詳細には、金属、セラミ
ックス産業、機械、装置産業や電子半導体産業等で使用
する各種セラミックス材料等の表面にイオンビームを利
用して金属薄膜を形成し、セラミックスの表面性能「導
電性、他の材料（バルク、膜）との接合下地膜、電磁波
反射吸収膜等」を改善させるイオンミキシング法による
セラミックス表面への金属膜形成法に関するものである
。Detailed Description of the Invention (Industrial Application Field) The present invention relates to a method for forming a metal film on a ceramic surface by an ion mixing method, and more specifically, to the metal and ceramics industry, machinery and equipment industry, and electronic semiconductor industry. By using ion beams to form metal thin films on the surfaces of various ceramic materials, etc. used in The present invention relates to a method for forming metal films on ceramic surfaces using an ion mixing method that improves the
（従来の技術）
従来、この種のイオンミキシング法によるセラミックス
表面への金属膜形成法としては、外部の真空ポンプ等に
接続された或膜室内の一方に表面処理すべきセラミック
ス基板を保持する基板ホルダーを配置し、また他方にイ
オンを発生させるイオン源と、該イオンを加速させる加
速器を備えたイオンビーム源と、金属を蒸発させる金属
蒸発源を配置した装置を用い、威膜室内を所定の真空度
に設定し、金属蒸発源で加熱された蒸発金属例えば銅（
Ｃｕ）およびイオンビーム源のイオン源で不活性非金属
元素例えばアルゴン（Ａｒ）のイオンを発生させ、該イ
オンを加速器で例えば数ＩＱｋｅＶ〜数１００ｋｅＶの
高エネルギーに加速し、加速された高速イオンビームを
例えば窒化アミミニウム（ＩＮ）から成るセラミックス
基板の表面に同時に照射することにより、セラミックス
基板の基板界面層で蒸着金属（銅）とセラミックス構成
成分元素のミキシングを行わせて、セラミックス基板上
に銅薄膜を形成する方法が知られている。(Prior art) Conventionally, in the method of forming a metal film on a ceramic surface using this type of ion mixing method, a substrate holding a ceramic substrate to be surface-treated is placed in one side of a film chamber connected to an external vacuum pump, etc. A holder is placed on the other side, and an ion beam source equipped with an ion source that generates ions, an accelerator that accelerates the ions, and a metal evaporation source that evaporates metal are used. The evaporated metal, e.g. copper (
Ions of an inert non-metal element such as argon (Ar) are generated in the ion source of the Cu) and ion beam source, and the ions are accelerated to a high energy of, for example, several IQ keV to several 100 keV in an accelerator to create an accelerated high-speed ion beam. For example, by simultaneously irradiating the surface of a ceramic substrate made of aluminum nitride (IN), the vapor deposited metal (copper) and the ceramic constituent elements are mixed at the substrate interface layer of the ceramic substrate, and a copper thin film is formed on the ceramic substrate. There are known methods of forming .
（発明が解決しようしする課題）
しかしながら、前記従来のイオンミキシング法によるセ
ラミックス表面への金属膜形成法は、アルゴン、ネオン
等の不活性非金属元素をセラミックス基板に照射させる
高エネルギーのイオンとして用いるため、セラミックス
基板上に形成された金属膜とセラミックス基板界面層で
は高エネルギーによる双方の構成元素間での単純なミキ
シングしか生かせず、セラミックス基板上に形成された
金属膜の該セラミックス基板に対する接合強度（付着力
或いは密着性ともいう）３
が比較的小さく、また接合強度の値が大きくバラックと
いう現象が起こるという問題がある。(Problem to be solved by the invention) However, the conventional ion mixing method for forming a metal film on a ceramic surface uses inert nonmetallic elements such as argon and neon as high-energy ions to irradiate the ceramic substrate. Therefore, in the interface layer between the metal film formed on the ceramic substrate and the ceramic substrate, only simple mixing between the two constituent elements due to high energy can be achieved, and the bonding strength of the metal film formed on the ceramic substrate to the ceramic substrate is limited. (Also referred to as adhesion or adhesion) is relatively small, and the bonding strength is large, resulting in the phenomenon of bulk.
そこで接合強度を向上させるために加速された高エネル
ギーのイオンビームのエネルギー即ちビーム電流値を十
分大きくする必要があった。Therefore, in order to improve the bonding strength, it was necessary to sufficiently increase the energy of the accelerated high-energy ion beam, that is, the beam current value.
しかしこの場合も、あまり多量の不活性非金属元素を照
射するとブリスタリング（気泡）の形成や照射損傷によ
り、界面が．変質して逆に接合部の強度が低下するとい
う問題がある。However, even in this case, if too much of the inert nonmetallic element is irradiated, the interface will be damaged due to the formation of blistering (bubbles) and radiation damage. There is a problem that the strength of the joint decreases due to deterioration in quality.
まｋ１前記従来法による界面での接合が不十分な場合に
は基板上に形成された金属膜の高温での振る舞いにも端
的に現れる。例えばセラミックス基板に窒化アルミニウ
ム（ｉ Ｎ） を、蒸発させる金属に銅（Ｃｕ）を、加
速された高エネルギーにアルゴン（Ａｒ）を夫が用い、
従来のイオンミキシング法により銅膜を窒化アルミニウ
ム上に形成させたものを、真空中で銅の融点１０８３℃
以上に加熱した場合、銅は窒化アルミニウム上で溶けて
、窒化アルミニウム上に微小球状に凝縮してしまう。本
来、窒化アル４
ミニウムと銅は、ぬれ性が悪く、窒化アルミニウム上に
少量の銅を置き、銅の融点１０８３℃以上に加熱した場
合は、銅は溶けて丸い球状になる事実より、不活性非金
属元素を高エネルギーのイオンとして用いる従来のイオ
ンミキシング法による単純なイオンミキシングでは、基
板と基板上に形成された金属膜の界面の接合が弱く熱的
安定性が不十分であることを示している。1. If the bonding at the interface by the conventional method is insufficient, this will clearly appear in the behavior of the metal film formed on the substrate at high temperatures. For example, my husband used aluminum nitride (iN) for the ceramic substrate, copper (Cu) for the metal to be evaporated, and argon (Ar) for the accelerated high energy.
A copper film was formed on aluminum nitride using the conventional ion mixing method, and the melting point of copper was 1083°C in a vacuum.
When heated to a higher temperature, the copper melts on the aluminum nitride and condenses into microspheres on the aluminum nitride. Originally, aluminum nitride and copper have poor wettability, and when a small amount of copper is placed on aluminum nitride and heated above copper's melting point of 1083°C, the copper melts into a round spherical shape. Simple ion mixing using conventional ion mixing methods that use nonmetallic elements as high-energy ions has shown that the bond between the substrate and the metal film formed on the substrate is weak and thermal stability is insufficient. ing.
本発明は、前記問題点を解消し、少量のイオンビームの
照射で、付着力が大きく、高温でも十分安定な金属膜を
セラミックス基板上に形成する方法を提供することを目
的とする。SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems and provide a method for forming a metal film on a ceramic substrate that has strong adhesion and is sufficiently stable even at high temperatures by irradiating a small amount of ion beam.
（課題を解決するための手段）
本発明のイオンミキシング法によるセラミックス表面へ
の金属膜形成法は、金属蒸発源からの蒸発金属およびイ
オンビーム源からの高速イオンビームをセラミックス基
板に照射して、該セラミックス基板上に金属薄膜を形成
させるイオンミキシング法による金属膜の形成法におい
て、前記セラミックス基板を構成する複数の元素のうち
少なくとも１つの戊分元素と化合物を形成することが出
来る金属元素を高速イオンビームにして前記セラミック
ス基板に照射させるようにしたことを特徴とする。(Means for Solving the Problems) The method of forming a metal film on a ceramic surface by the ion mixing method of the present invention involves irradiating a ceramic substrate with evaporated metal from a metal evaporation source and a high-speed ion beam from an ion beam source. In the method for forming a metal film by ion mixing method of forming a metal thin film on the ceramic substrate, a metal element capable of forming a compound with at least one of the plurality of elements constituting the ceramic substrate is mixed at high speed. The present invention is characterized in that the ceramic substrate is irradiated with an ion beam.
本発明で用いるセラミックス基板としては、窒化アルミ
ニウム（ｉ Ｎ） 、窒化ケイ素（Ｓｉ３Ｎ４）、炭化
ケイ素（Ｓ ｉ Ｃ） 、ジルコニア（ｚｒＯ２）、ア
ルミナ（Ａｇ２０３）等が挙げられるが、これに限定さ
れるものではない。Ceramic substrates used in the present invention include, but are not limited to, aluminum nitride (iN), silicon nitride (Si3N4), silicon carbide (S i C), zirconia (zrO2), alumina (Ag203), etc. It's not a thing.
また、活性な金属イオンビームとしては、チタン（Ｔｌ
”）、アルミニウム（Ａｇ＋）、ベリリウム（Ｂｅ＋）
、マグネシウム（Ｍｇ”）、ケイ素（Ｓｉ＋）、バナジ
ウム（■＋）、クロム （Ｃｒ”）、マンガン（Ｍｎ”
）、ジルコニム（Ｚｒ＋）、ニオブ（Ｎｂ＋）、ハフニ
ウム （Ｈｆ”）、タンタル（Ｔａ＋）、夕・ングステ
ン（Ｗ＋）等が挙げられるが、これに限定されるもので
はなく、前記セラミックス基板の種類に応じて適宜選択
する。In addition, as an active metal ion beam, titanium (Tl
”), aluminum (Ag+), beryllium (Be+)
, magnesium (Mg”), silicon (Si+), vanadium (■+), chromium (Cr”), manganese (Mn”)
), zirconium (Zr+), niobium (Nb+), hafnium (Hf''), tantalum (Ta+), yungsten (W+), etc., but are not limited to these. Select accordingly.
また、蒸発させる金属としては、銅（Ｃｕ）、アルミニ
ウム（Ａ，Ｉ；ｌ ’Ｉ 、チタン（Ｔｉ）等が挙げら
れるが、これに限定されるものではなく、前記セラミッ
クス基板および前記活性な金属イオンビームの種類に応
じて適宜選択する。Further, examples of the metal to be evaporated include copper (Cu), aluminum (A,I;l'I), titanium (Ti), etc., but are not limited thereto. Select as appropriate depending on the type of ion beam.
（作 用）
セラミックス基板の構成元素にとり化学的に活性な金属
元素からなる高速イオンビームをセラミックス基板に照
射することにより、セラミックス基板と金属膜の界面に
セラミックスの構或元素とイオンビームとして基板に注
入される金属元素および金属蒸発源より蒸着した金属か
らなる混合層を形成する。(Function) By irradiating the ceramic substrate with a high-speed ion beam consisting of a metal element that is chemically active for the constituent elements of the ceramic substrate, the constituent elements of the ceramic and the ion beam are delivered to the interface between the ceramic substrate and the metal film. A mixed layer is formed of the implanted metal element and the metal evaporated from the metal evaporation source.
（実施例）
以下添付図面に従って本発明の実施例について説明する
。(Example) Examples of the present invention will be described below with reference to the accompanying drawings.
第１図は本発明金属膜形成法を実施するための膜形成装
置の１例を示すもので、図中、１は戊膜室を示す。該或
膜室１内を外部の真空ポンプその他の真空排気系２に接
続すると共に、該７
成膜室１内の一方に表面に金属膜を形成すべきセラミッ
クス基板３を保持する基板ホルダー４を配置した。また
、該或膜室１内の他方に前記基板ホルダー４に保持され
たセラミックス裁板３に対向させて金属５の金属蒸発源
６と、イオンを発生させるイオン源と、該イオンを加速
させる加速器を備えたイオンビーム源７を配置した。そ
して真空排気系２を作動させて成膜室１内を所定の真空
度に設定し、セラミックス基板３に蒸着させる金属５を
金属蒸発源６で加熱して成膜室１内に蒸発（矢印８）さ
せると共に、セラミックス基板３に照射すべき金属元素
をイオンビーム源７で数ｋｅｖ〜数１ ０ ０ ｋ ｅ
Ｖの高エネルギーに加速された高速イオンビーム（矢
印９）とし、該高速イオンビームをセラミックス基板３
に照射出来るようにした。FIG. 1 shows an example of a film forming apparatus for carrying out the metal film forming method of the present invention, and in the figure, 1 indicates a film chamber. The interior of the film forming chamber 1 is connected to an external vacuum pump or other evacuation system 2, and a substrate holder 4 for holding a ceramic substrate 3 on the surface of which a metal film is to be formed is provided on one side of the film forming chamber 1. Placed. Further, in the other side of the certain film chamber 1, a metal evaporation source 6 of the metal 5 is provided facing the ceramic cutting plate 3 held by the substrate holder 4, an ion source for generating ions, and an accelerator for accelerating the ions. An ion beam source 7 equipped with the following was arranged. Then, the vacuum evacuation system 2 is activated to set the inside of the film forming chamber 1 to a predetermined degree of vacuum, and the metal 5 to be deposited on the ceramic substrate 3 is heated by the metal evaporation source 6 and evaporated into the film forming chamber 1 (arrow 8 ), and at the same time, the metal element to be irradiated onto the ceramic substrate 3 is irradiated with an ion beam source 7 of several keV to several 100 ke.
A high-speed ion beam (arrow 9) is accelerated to a high energy of V, and the high-speed ion beam is placed on a ceramic substrate 3.
It is now possible to irradiate.
次に、前記装置を用いてセラミックス表面への金属膜形
成法の具体的実施例を比較例と共に説明する。Next, a specific example of a method for forming a metal film on a ceramic surface using the above-mentioned apparatus will be described together with a comparative example.
実施例１
８
先ず、成膜室１内の基板ホルダー４に厚さ０．６＋ｎｎ
＋の材質窒化アルミニウム（ＡρＮ）から成るセラミッ
クス基板３を保持すると共に、金属蒸発源６内に蒸発金
属５としての銅（Ｃ ｕ）を充Ｅｆ４ Ｌた状態で該成
膜室１内の圧力を真空排気系２を介してＩ Ｘ １ ０
−６Ｔｏｒｒに設定し、該或膜室１内を該圧力に保った
状態とする。Example 1 8 First, the substrate holder 4 in the film forming chamber 1 was coated with a thickness of 0.6+nn.
While holding the ceramic substrate 3 made of aluminum nitride (AρN) and filling the metal evaporation source 6 with copper (Cu) as the evaporation metal 5, the pressure inside the film forming chamber 1 is reduced. IX10 via vacuum evacuation system 2
-6 Torr, and the inside of the membrane chamber 1 is maintained at the pressure.
次に、セラミックス基板３の表面に予めイオンビーム源
７でイオンビーム電流密度を４００Ｉｔ Ａ ／ ２
０ ｃＪとし、５０ｋｅＶの高エネルギーに加速された
アルミニウム（Ａｊ！ ” ）の高速イオンビームを５
分間照射した後、金属蒸発源６で１３２０±５０℃に加
熱された銅５を蒸発させてセラミックス基板３の表面に
銅５をＩＯＪ／秒の蒸着速度での蒸着と、イオンビーム
源７でイオンビーム電流密度を１００μＡ ／ ２ ０
ａｔと４００μＡ／２０ｃ一とし、、５ｏｋｅＶの高
エネルギーに加速されたアルミニウム（Ａ［ ” ）の
高速イオンビームをイオンｆｎ ５ Ｘ １ ０ ”ｔ
ｏｎｓ／ ｃｄでセラミックス基板３上に同時に照射し
てセラミックス基板３の表面に銅薄膜の形成を行った。Next, the ion beam source 7 applies an ion beam current density of 400 It A/2 to the surface of the ceramic substrate 3 in advance.
0 cJ and a high-speed ion beam of aluminum (Aj!'') accelerated to a high energy of 50 keV.
After irradiating for minutes, the copper 5 heated to 1320±50°C is evaporated with the metal evaporation source 6 to deposit copper 5 on the surface of the ceramic substrate 3 at a deposition rate of IOJ/sec, and the ion beam source 7 evaporates the copper 5 with ion beams. Beam current density 100μA/20
At and 400μA/20c, a high-speed ion beam of aluminum (A['') accelerated to a high energy of 5okeV is ion fn 5 x 10''t.
Ons/cd was simultaneously irradiated onto the ceramic substrate 3 to form a copper thin film on the surface of the ceramic substrate 3.
そして前記方法で形成された銅薄膜とセラミックス基板
３の接合強度を測定し、その測定結果を第２図に○印と
して示す。Then, the bonding strength between the copper thin film formed by the above method and the ceramic substrate 3 was measured, and the measurement results are shown as circles in FIG.
実施例２
セラミックス基板３に照射する高速イオンビームにチタ
ン（Ｔｉ”）を用い、イオンビーム源７でのイオンビー
ム電流密度を４００μＡ／２０ｃ−とし、また予めセラ
ミックス基板に対して行う高速イオンビームの照射にチ
タン（Ｔｉ＋）を用いた以外は実施例１と同様の方法で
セラミックス基板３の表面に銅薄膜の形成を行った。Example 2 Titanium (Ti'') was used for the high-speed ion beam irradiated onto the ceramic substrate 3, the ion beam current density at the ion beam source 7 was set to 400 μA/20c-, and the high-speed ion beam applied to the ceramic substrate 3 was A copper thin film was formed on the surface of the ceramic substrate 3 in the same manner as in Example 1 except that titanium (Ti+) was used for irradiation.
そして前記方法で形成された銅薄膜とセラミックス基板
３の接合強度を測定し、その測定桔果を第２図に▲印と
して示す。Then, the bonding strength between the copper thin film formed by the above method and the ceramic substrate 3 was measured, and the measurement results are shown as ▲ in FIG. 2.
実施例３
セラミックス基板３に照射する高速イオンにチタン（Ｔ
ｉ”）を用い、イオンビーム源７でのイオンビーム電流
密度を４００μＡ ／ ２ ０ （！Ｊとし、予めセラ
ミックス基板３の表面への高速イオンビームの照射を行
わずに、直ちにセラミックス基板３の表面に対して金属
蒸発および高速イオンビームの照射を行った以外は実施
例１と同様の方法でセラミックス基板３の表面に銅薄膜
の形成を行った。Example 3 Titanium (T
i"), the ion beam current density in the ion beam source 7 was set to 400 μA / 20 (!J), and the surface of the ceramic substrate 3 was immediately irradiated without irradiating the surface of the ceramic substrate 3 with a high-speed ion beam in advance. A copper thin film was formed on the surface of the ceramic substrate 3 in the same manner as in Example 1, except that metal evaporation and high-speed ion beam irradiation were performed.
そして前記方法で形成された銅薄膜とセラミックス基板
３の接合強度を測定し、その測定結果を第２図にΔ印と
して示す。Then, the bonding strength between the copper thin film formed by the above method and the ceramic substrate 3 was measured, and the measurement results are shown as Δ in FIG. 2.
比較例１
セラミックス基板３に照射する高速イオンビームに不活
性非金属のアルゴン（Ａｒ”）を用い、イオンビーム源
７でのイオンビーム電流密度を１ ０ ０ ｕ Ａ ／
２ ０ ｃ＋ｉｔ、４ ０ ０ ｔｔ Ａ ／ ２
０ ｃｄ、８ ０ ０ ｕ Ａ ／ ２ ０ ｃｄ、１
６ ０ ０ ｐ Ａ ／ ２ ０ ｃＪとした以外は
実施例１と同様の方法でセラミックス基板３′の表面に
銅薄膜の形成を行った。Comparative Example 1 An inert nonmetallic argon (Ar) was used for the high-speed ion beam irradiated onto the ceramic substrate 3, and the ion beam current density at the ion beam source 7 was set to 100 uA/
2 0 c+it, 4 0 0 tt A/2
0 cd, 8 0 0 u A / 2 0 cd, 1
A copper thin film was formed on the surface of the ceramic substrate 3' in the same manner as in Example 1 except that the current was 600 pA/20 cJ.
そして前記方法で形成された銅薄膜とセラミックス基板
３の接合強度を測定し、その測定結１１
果を第３図にＯ印或いは●印として示す。尚、第３図中
の○印は接合強度測定中にＣｕ膜の剥離が、また●印は
基板の破壊が生じた場合を表わす。Then, the bonding strength between the copper thin film formed by the above method and the ceramic substrate 3 was measured, and the measurement results are shown in FIG. 3 as O marks or ● marks. In FIG. 3, the ◯ mark indicates that the Cu film was peeled off during the measurement of the bonding strength, and the ● mark indicates that the substrate was destroyed.
比較例２
セラミックス基板３の表面への高速イオンビームの照射
を行わずに金属蒸発源６による蒸発金属５の蒸着のみを
行った以外は実施例１と同様の方法でセラミックス基板
３の表面に銅薄膜の形成を行った。Comparative Example 2 Copper was deposited on the surface of the ceramic substrate 3 in the same manner as in Example 1, except that the evaporated metal 5 was only evaporated using the metal evaporation source 6 without irradiating the surface of the ceramic substrate 3 with a high-speed ion beam. A thin film was formed.
そして前記方法で形成された銅薄膜とセラミックス基板
３の接合強度を測定し、その測定結果を第３図に口印と
して示す。Then, the bonding strength between the copper thin film formed by the above method and the ceramic substrate 3 was measured, and the measurement results are shown as a seal in FIG.
第２図および第３図から明らかなように、セラミックス
基板に照射する高エネルギーのイオンに活性な金属Ａρ
”を用いた本発明法の実施例１、高エネルギーのイオン
に活性な金属Ｔｉ１を用いた実施例２および３は、照射
する高エネルギーのイオンに不活性な非金属Ａｒ＋を用
いた従来法の比較例１に比して１７１０〜１／１ ２
２０程度のイオンビームの照射量（イオンビーム電流密
度）で接合強度が大きく、しかもその接合強度にバラツ
キの少ない銅薄膜をセラミックス基板上に形成出来るこ
とが確認された。As is clear from Figures 2 and 3, the metal Aρ is active in high-energy ions irradiated onto the ceramic substrate.
``Example 1 of the present invention method using ``, and Examples 2 and 3 using Ti1, a metal active for high-energy ions, are different from the conventional method using non-metal Ar+, which is inactive for high-energy ions to be irradiated. Compared to Comparative Example 1, a copper thin film with high bonding strength and less variation in bonding strength can be formed on a ceramic substrate with an ion beam irradiation dose (ion beam current density) of about 1710 to 1/1220. This was confirmed.
このように基板界面層で蒸着金属Ｃｕとセラミックス構
成元素Ａｊ７とＮが照射された高エネルギーの活性金属
イオンビームＴｉ＋またはＡＩ＋によりミキシング（物
理的作用）され、更にＴｉ，ＡＩ？，Ｃｕ，Ｎ或いはＡ
ＩＩ，Ｃｕ，Ｎより構成される化合物層（化学的作用）
が容易に形成されることにより、基板Ａ［Ｎ上に極めて
密着性の優れたＣｕの薄膜を形戊することが出来る。In this way, at the substrate interface layer, the vapor deposited metal Cu and the ceramic constituent elements Aj7 and N are mixed (physically) by the irradiated high-energy active metal ion beam Ti+ or AI+, and further Ti, AI? , Cu, N or A
Compound layer composed of II, Cu, and N (chemical action)
By easily forming Cu, a thin film of Cu with extremely excellent adhesion can be formed on the substrate A[N.
また、前記実施例１および比較例１で得られた銅薄膜を
有するセラミックス基板を真空（１Ｘ １ ０−６Ｔｏ
ｒｒ）中で銅の融点１０３８℃以上で２分間加熱した後
、常温まで冷やし、セラミックス基板上での銅の挙動を
走査型電子顕微鏡（倍率１０００倍）で観察したところ
、本発明法の実施例１は高温度で加熱されてもセラミッ
クス基板上に銅が薄膜状に広がった状態を保っていたの
に対し、従来法の比較例１ではセラミックス基板上で銅
が溶けて凝縮し、径が１０〜４０μの銅の微小球状が多
数形成されていた。Further, the ceramic substrates having the copper thin films obtained in Example 1 and Comparative Example 1 were placed in a vacuum (1X 10-6To
rr) for 2 minutes above the melting point of copper, 1038°C, and then cooled to room temperature, and the behavior of copper on the ceramic substrate was observed using a scanning electron microscope (1000x magnification). In Comparative Example 1 of the conventional method, the copper melted and condensed on the ceramic substrate, and the diameter became 10 mm. A large number of copper microspheres of ~40μ were formed.
これらのことは、従来法では、主にミギシング（物理的
作用）により銅膜がセラミックス基板に付着しているの
に対して、本発明法では、更に基板／金属膜界面層で化
合物層が形成（化学的作用）され、セラミックス基板表
面の銅とのぬれ性が大幅に改善されていることを示して
いる。The reason for this is that in the conventional method, the copper film adheres to the ceramic substrate mainly by migrating (physical action), whereas in the method of the present invention, a compound layer is further formed at the substrate/metal film interface layer. (chemical effect), indicating that the wettability of the ceramic substrate surface with copper has been significantly improved.
前述のように本発明では金属蒸発源より蒸発した金属と
セラミックス成分元素が容易に化合物を形成しない場合
であっても、基板に照射される化学的に活性な金属元素
から成る高速イオンビームの物理的、化学的作用により
容易に化合物層を基板と金属膜の界面に形成することが
出来る。As mentioned above, in the present invention, even if the metal evaporated from the metal evaporation source and the ceramic component elements do not easily form a compound, the physics of the high-speed ion beam consisting of chemically active metal elements that is irradiated onto the substrate can be improved. A compound layer can be easily formed at the interface between the substrate and the metal film by chemical action.
（発明の効果）
このように本発明によるときは、セラミックス基板を構
或する複数の元素のうち少なくとも１つの構成元素と化
合物を形成することが出来る化学的に活性な金属元素を
高速イオンビームにして、金属蒸発源からの蒸発金属と
共にセラミックス基板上に照射することにより、基板界
面層で蒸着金属と、セラミックスの構或元素が照射され
た高エネルギーの金属イオンビームによりミキシングさ
れ、更にこれらの化合物層が形成されるので、セラミッ
クス基板上に極めて密着性の優れた蒸発金属の薄膜を容
易に形成することが出来、また、従来法のような不活性
非金属元素の高エネルギーイオンビーを多量に照射する
ことを要しないから、照射損傷やブリスタリング（気泡
）の形成による接合強度の低下が生じることなく、かつ
従来法に比して少ないイオンビーム照射量でも基板に対
してより接合強度の高い金属薄膜を形戊することが出来
るから、蒸発金属とセラミックス基板の成分元素が容易
に化合物を形成しない金属膜の形戊において特に有用で
ある等の効果を有する。(Effects of the Invention) As described above, according to the present invention, a chemically active metal element capable of forming a compound with at least one of the plurality of elements constituting the ceramic substrate is used with a high-speed ion beam. By irradiating the ceramic substrate with the evaporated metal from the metal evaporation source, the evaporated metal and the constituent elements of the ceramic are mixed at the substrate interface layer by the irradiated high-energy metal ion beam, and these compounds are further mixed. Since a layer is formed, it is possible to easily form a thin film of evaporated metal with extremely good adhesion on a ceramic substrate, and it is also possible to easily form a thin film of evaporated metal with excellent adhesion on a ceramic substrate. Since no irradiation is required, there is no reduction in bonding strength due to radiation damage or blistering (bubbles) formation, and the bonding strength to the substrate is higher even with a lower ion beam irradiation dose than conventional methods. Since it is possible to form a metal thin film, it has effects such as being particularly useful in forming metal films in which the evaporated metal and the constituent elements of the ceramic substrate do not easily form a compound.
１ ５1 5
第１図は本発明金属膜の形成法を実施するための装置の
１例の截断面図、第２図は本発明実施例におけるイオン
ビーム電流密度と基板」二に形成された金属膜の接合強
度の関係を示す特性値図、第３図は比較例におけるイオ
ンビーム電流密度と基板上に形成された金属膜の接合強
度の関係を示す特性値図である。
３・・・セラミックス基板
６・・・金属蒸発源
７・・・イオンビーム源
８・・・蒸発金属
９・・・高速イオンビーム
１
６FIG. 1 is a cross-sectional view of an example of an apparatus for carrying out the method of forming a metal film of the present invention, and FIG. 2 is a diagram showing the ion beam current density and the bonding of the metal film formed on the substrate in the embodiment of the present invention. FIG. 3 is a characteristic value diagram showing the relationship between the ion beam current density and the bonding strength of the metal film formed on the substrate in a comparative example. 3...Ceramics substrate 6...Metal evaporation source 7...Ion beam source 8...Evaporation metal 9...High speed ion beam 1 6
Claims (1)
高速イオンビームをセラミックス基板に照射して、該セ
ラミックス基板上に金属薄膜を形成させるイオンミキシ
ング法による金属膜形成法において、前記セラミックス
基板を構成する複数の元素のうち少なくとも１つの成分
元素と化合物を形成することが出来る金属元素を高速イ
オンビームにして前記セラミックス基板に照射させるよ
うにしたことを特徴とするイオンミキシング法によるセ
ラミックス表面への金属膜形成法。In a metal film forming method using an ion mixing method in which a ceramic substrate is irradiated with evaporated metal from a metal evaporation source and a high-speed ion beam from an ion beam source to form a metal thin film on the ceramic substrate, the ceramic substrate is formed. A metal film on a ceramic surface by an ion mixing method, characterized in that the ceramic substrate is irradiated with a high-speed ion beam of a metal element capable of forming a compound with at least one constituent element among a plurality of elements. Formation method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29609189A JP2743201B2 (en) | 1989-11-16 | 1989-11-16 | Metal film formation method on ceramics surface by ion mixing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29609189A JP2743201B2 (en) | 1989-11-16 | 1989-11-16 | Metal film formation method on ceramics surface by ion mixing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03159978A true JPH03159978A (en) | 1991-07-09 |
| JP2743201B2 JP2743201B2 (en) | 1998-04-22 |
Family
ID=17829006
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29609189A Expired - Lifetime JP2743201B2 (en) | 1989-11-16 | 1989-11-16 | Metal film formation method on ceramics surface by ion mixing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2743201B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105436643A (en) * | 2016-01-07 | 2016-03-30 | 上海电机学院 | Direct aluminum or aluminum alloy brazing method for aluminum oxide ceramics |
| CN106024124A (en) * | 2016-07-14 | 2016-10-12 | 安徽樵森电气科技股份有限公司 | Anti-oxidation anti-electric leakage aluminum core conductor |
| CN106205763A (en) * | 2016-07-14 | 2016-12-07 | 安徽樵森电气科技股份有限公司 | Corrosion-resistant anticreep copper conductor |
| CN107244900A (en) * | 2017-05-23 | 2017-10-13 | 昆明理工大学 | A kind of copper anode casting die repairing material and its application |
-
1989
- 1989-11-16 JP JP29609189A patent/JP2743201B2/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105436643A (en) * | 2016-01-07 | 2016-03-30 | 上海电机学院 | Direct aluminum or aluminum alloy brazing method for aluminum oxide ceramics |
| CN106024124A (en) * | 2016-07-14 | 2016-10-12 | 安徽樵森电气科技股份有限公司 | Anti-oxidation anti-electric leakage aluminum core conductor |
| CN106205763A (en) * | 2016-07-14 | 2016-12-07 | 安徽樵森电气科技股份有限公司 | Corrosion-resistant anticreep copper conductor |
| CN107244900A (en) * | 2017-05-23 | 2017-10-13 | 昆明理工大学 | A kind of copper anode casting die repairing material and its application |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2743201B2 (en) | 1998-04-22 |
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