JPS6373682A - Semiconductor laser - Google Patents
Semiconductor laserInfo
- Publication number
- JPS6373682A JPS6373682A JP21845786A JP21845786A JPS6373682A JP S6373682 A JPS6373682 A JP S6373682A JP 21845786 A JP21845786 A JP 21845786A JP 21845786 A JP21845786 A JP 21845786A JP S6373682 A JPS6373682 A JP S6373682A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- groove
- active layer
- current blocking
- active
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 230000000903 blocking effect Effects 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 238000005253 cladding Methods 0.000 claims description 16
- 239000013078 crystal Substances 0.000 abstract description 10
- 230000012010 growth Effects 0.000 abstract description 6
- 238000009751 slip forming Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2237—Buried stripe structure with a non-planar active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
- H01S5/32391—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers based on In(Ga)(As)P
Landscapes
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野コ
本発明は、ＶＳＢ （Ｖ−ｇｒｏｏｖｅｄ ５ｕｂｓｔ
ｒａｔｅ ＢｕｒｉｅｄＨ＠ｔ＊ｒｏｓｔｒｕｅｔｕｒ
＠）半導体レーデに係シ、特に所定の活性層構造を有す
る半導体レーザに関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention is directed to VSB (V-grooved 5ubst
rate BuriedH@t*rostruetur
@) Related to semiconductor lasers, particularly to semiconductor lasers having a predetermined active layer structure.
［従来の技術］
光７アイパ通信用光源としては、低しきい値電流かつ基
本横モードで動作する半導体レーザが必要である。この
ような半導体レーデの１つとして第２図に示すようなＶ
８Ｂ半導体レーザがある。図中１は、ｎ型のＩｎＰ基板
である。ＩｎＰ基板１上には、ｐ型のＩｎＰからなる電
流阻止層２、ｎ型のＩｎＰからなる電流阻止層３が順次
積層されている。[Prior Art] As a light source for optical 7-eye communication, a semiconductor laser that has a low threshold current and operates in a fundamental transverse mode is required. One such semiconductor radar is the VV shown in Figure 2.
There is an 8B semiconductor laser. In the figure, 1 is an n-type InP substrate. On the InP substrate 1, a current blocking layer 2 made of p-type InP and a current blocking layer 3 made of n-type InP are sequentially laminated.
これらの電流阻止層２，３の所定領域には、ＩｎＰ基板
１に僅に入９込んだ断面略Ｖ字型の溝４が形成されてい
る。電流阻止層３の主面上及び溝４内の所定深さ部分に
は、ｎ型ＩｎＰからなるクラッド層５及びノンドーグＧ
ａＩｎＡｍＰ （λｇ ＝ １．３ Ｊｉｍ ）からな
る活性層６が順次積層されている。また、活性Ｎ１３上
にはこれを覆うと共に溝４を塞ぐようにしてＰ型ＩｎＰ
からなるクラッド層７が形成されている。クラッド層７
上には、Ｐ型ＧａＩｎＡｓＰ （λ＝１．３μｍ）から
なるキャップ層８が形成されている。In predetermined regions of these current blocking layers 2 and 3, grooves 4 having a substantially V-shaped cross section are formed slightly into the InP substrate 1. On the main surface of the current blocking layer 3 and at a predetermined depth within the groove 4, a cladding layer 5 made of n-type InP and a non-doped G
Active layers 6 made of aInAmP (λg = 1.3 Jim) are sequentially laminated. In addition, P-type InP is placed on the active N13 so as to cover it and close the groove 4.
A cladding layer 7 consisting of the following is formed. Cladding layer 7
A cap layer 8 made of P-type GaInAsP (λ=1.3 μm) is formed thereon.
而して、活性層６は、第２回目の液相成長時に形成され
熱的なダメージを受けない構造になっており、しかも、
活性層６０幅は溝４の幅によって自己整合的に決定され
ている。Thus, the active layer 6 is formed during the second liquid phase growth and has a structure that is not subject to thermal damage.
The width of the active layer 60 is determined by the width of the groove 4 in a self-aligned manner.
［発明が解決しようとする問題点コ
このような半導体レーデでは、製造時に５ｉｏ２膜をエ
ツチングマスクとして塩酸とリン酸の混合液によシ溝４
を形成する。このため８１０□膜と電流阻止層３の密着
度合によシ、サイドエッチが起こシｎ４の幅が広がる。[Problems to be solved by the invention] In such a semiconductor radar, the grooves 4 are etched with a mixture of hydrochloric acid and phosphoric acid using the 5io2 film as an etching mask during manufacturing.
form. Therefore, depending on the degree of adhesion between the 810□ film and the current blocking layer 3, side etching occurs and the width of n4 increases.
すなわち、活性層６０幅が広くなシ、基本横モード動作
範囲を満足することが困難であった（ ＯＯＭＵＲＡ
ｅｔａｌ ＩＥＩＪ Ｊ、 Ｑｕａｎｔｕｍ 。In other words, if the width of the active layer 60 is wide, it is difficult to satisfy the basic transverse mode operating range (OOMURA
etal IEIJ J, Quantum.
Ｅｌ＠ｃｔｒｏｎ 、 ｖｏｌ、 ＱＥ−２０ｓ Ｐ８
６６ｓ １９８４）。El@ctron, vol, QE-20s P8
66s 1984).
本発明は、かかる点に鑑みてなされたものであシ、低し
きい値電流及び基本横モード動作が可能であると共に、
良好な再現性の下に活性層の幅を狭く制御することがで
きる半導体レーザを提供するものである。The present invention has been made in view of these points, and is capable of low threshold current and basic transverse mode operation.
The present invention provides a semiconductor laser in which the width of the active layer can be narrowly controlled with good reproducibility.
［問題点を解決するための手段］
本発明は、第１導電型の半導体基板上に少なくとも活性
層よシ禁制帯幅の大きなＧａｘ Ｉ ｎ １− ｘＡ
ｍｙＰ、−ア（ｏ ＜ ｘ ＊ ｙ ＜ ＞ ）を含ん
で形成された電流阻止層と、該電流阻止層の所定領域な
貫挿して前記半導体基板の表面に達する深さで形成され
たストライプ状の溝と、該溝の底部及び前記電流阻止層
上に形成された第１導電型のクラッド層と、前記溝内の
該クラッド層上に主面を凹ませて形成され、かつ、前記
１！流阻止層の上方の前記クラッド層上に積層された前
記活性層と、前記活性層を覆うと共に前記溝を塞ぐよう
にして前記活性層上に形成された第２導電型のクラッド
層とを具備する半導体レーザである。[Means for Solving the Problems] The present invention provides a structure in which Gax I n 1-
myP, -a (o < x * y <>), and a stripe-like stripe penetrating through a predetermined region of the current blocking layer to a depth reaching the surface of the semiconductor substrate. a groove, a cladding layer of a first conductivity type formed on the bottom of the groove and the current blocking layer, and a main surface recessed on the cladding layer in the groove, and the 1! The active layer is laminated on the cladding layer above the flow blocking layer, and the cladding layer of a second conductivity type is formed on the active layer so as to cover the active layer and close the groove. It is a semiconductor laser that
［作用コ
本発明に係る半導体レーザによれば、活性層の幅はスト
ライプ状の溝の幅及び電流阻止層の厚さによって決定さ
れるため、１μｍ程度の狭い幅に容易に設定することが
できる。また、電流阻止層を内在した構造である丸め、
基本横モード及び低しきい値電流での動作を実現する。[Function] According to the semiconductor laser according to the present invention, the width of the active layer is determined by the width of the striped groove and the thickness of the current blocking layer, so it can be easily set to a narrow width of about 1 μm. . In addition, rounded, which has a structure that includes a current blocking layer,
Achieves operation in fundamental transverse mode and low threshold current.
ことができる。更に、活性層を２回目の結晶成長により
形成できる構造であるため、活性層に熱による損傷が発
生するのを防止することができる。また、結晶層の成長
にＬＰＥ （Ｌｌｑｕｉｄ Ｐｈａｓｅ Ｅｐｉｔｍｘ
ｙ ）法を採用して平坦な表面の結晶層を設定すること
ができる。be able to. Furthermore, since the structure allows the active layer to be formed by a second crystal growth, it is possible to prevent damage to the active layer due to heat. In addition, LPE (Lquid Phase Epitmx) is used to grow the crystal layer.
y) method can be used to set a crystal layer with a flat surface.
［実施例］
以下、本発明の実施例について図面を参照して説明する
。第１図は、本発明の一実施例である波長１．３ Ｊｉ
ＩｎＧａＩｎＡ＠Ｐ／ＩｎＰ半導体レーザの概略構成を
示す説明図である。図中１０は、（１００） ＩｎＰか
らなるｎ型の半導体基板である。半導体基板ＪＯ上には
、５１１回目結晶成長によシ順次形成されたｐ型のＧａ
ＩｎＡｓＰ （λ、 ＝ １．１μｍ）からなる電流阻
止層１１、ｒｓ型のＩｎＰｎＰ２Ｏ５けられている。こ
れらの電流阻止層１１．１２の所定領域には、電流阻止
層１１．１２を貫挿して半導体基板１０の表面に達する
ストライプ状の溝Ｉ３が形成されている。この溝１３の
形成には、先ず例えば半導体基板１０を構成するエビタ
キンヤルウエハ上に幅２〜５μｍの窓を持つＳ１０□ス
トライプマスクを＜０１１＞方向に形成する。、次いで
−３ＨＣＬ： Ｈ，ＰＯ。[Examples] Examples of the present invention will be described below with reference to the drawings. FIG. 1 shows a wavelength of 1.3 Ji, which is an embodiment of the present invention.
FIG. 1 is an explanatory diagram showing a schematic configuration of an InGaInA@P/InP semiconductor laser. In the figure, 10 is an n-type semiconductor substrate made of (100) InP. On the semiconductor substrate JO, p-type Ga is formed sequentially by the 511th crystal growth.
A current blocking layer 11 made of InAsP (λ, = 1.1 μm) is made of rs-type InPnP2O5. Striped grooves I3 penetrating through the current blocking layers 11.12 and reaching the surface of the semiconductor substrate 10 are formed in predetermined regions of these current blocking layers 11.12. To form this groove 13, first, for example, an S10□ stripe mask having a window with a width of 2 to 5 μm is formed in the <011> direction on an Evita core wafer constituting the semiconductor substrate 10. , then -3HCL: H,PO.
のエツチング液を用いてＩｎＰｎＰ２Ｏ５ツチングし、
ストライプ状のチャネル部を設ける。この時のエツチン
グは、選択エツチングであり自動的にＧａＩｎ人ＩＰか
らなる電流阻止層１１上で停止する。InPnP2O5 was etched using an etching solution of
A striped channel portion is provided. The etching at this time is selective etching and automatically stops on the current blocking layer 11 made of GaIn IP.
次に、３Ｈ２ＳＯ４：Ｈ２Ｏ：Ｈ２Ｏ２のエツチング液
を用いてＩｎＰ ’ｆ＠ １２の露出部にエツチングを
施してストライプ状の溝１３を得る。このエツチングも
選択エツチングであるので、半導体基板ＪＯ上で自動的
に停止する。つまり、溝１３はマスクの窓形状及びＩｎ
ＰｎＰ２Ｏ５さによって所望の微細形状に設定されてい
る。溝１３によって露出した半導体基板１０上及びＩｎ
Ｐ層１層上２上、ｎ型のＩｎＰからなるクラッド層１４
が形成されている。クラッド層１４上には、ノンドーグ
ＧａＩｎＡｓＰ （λ、 ＝ １．３μｍ）からなる活
性層１５が形成されている。溝１３内の活性層１５の表
面は凹部を形成している。活性層１５上には、溝１３部
分を埋めるようにしてｐ型のＩｎＰからなるクラッド層
１６が形成されている。クラッド層１６上には、ｐ型の
ＧａＩｎＡｓＰ（λ、 ＝ １．３μｍ）からなるキャ
ップ層１７が形成されている。これらのキャップ層１７
、クラッド層１６，１４、活性Ｎ１５は、２回目の結晶
成長にて連続的に形成されたものである。なお、半導体
基板１０を１００μｍ程度の厚さに研摩した後、電極形
成を行ってレーザチップに切り出される。Next, the exposed portions of the InP'f@ 12 are etched using an etching solution of 3H2SO4:H2O:H2O2 to obtain striped grooves 13. Since this etching is also selective etching, it automatically stops on the semiconductor substrate JO. In other words, the groove 13 is formed by the window shape of the mask and the In
A desired fine shape is set by PnP2O5. The surface of the semiconductor substrate 10 exposed by the groove 13 and the In
Cladding layer 14 made of n-type InP on P layer 1 and layer 2
is formed. An active layer 15 made of non-doped GaInAsP (λ, = 1.3 μm) is formed on the cladding layer 14. The surface of the active layer 15 within the groove 13 forms a recess. A cladding layer 16 made of p-type InP is formed on the active layer 15 so as to fill the trench 13 portion. A cap layer 17 made of p-type GaInAsP (λ, = 1.3 μm) is formed on the cladding layer 16. These cap layers 17
, cladding layers 16, 14, and active N15 are formed continuously in the second crystal growth. Note that after polishing the semiconductor substrate 10 to a thickness of about 100 μm, electrodes are formed and cut into laser chips.
このように構成された半導体レーデ２０によれば、溝１
３の形状に基づいて活性層１５の幅を所定の狭い幅に容
易に設定することができる。また、電流阻止層１１を内
在した構造であり、基本横モード及び低しきい値電流で
の動作が可能である。According to the semiconductor radar 20 configured in this way, the groove 1
Based on the shape of No. 3, the width of the active layer 15 can be easily set to a predetermined narrow width. Furthermore, it has a structure that includes a current blocking layer 11, and can operate in a fundamental transverse mode and at a low threshold current.
また、活性層１５は２回目の一連の結晶成長で形成でき
るので、熱による損傷を防止して高品質のものとするこ
とができる。また、ＬＰｇ法による結晶層の形成によっ
て表面の平坦化を実現することができる。Furthermore, since the active layer 15 can be formed by a second series of crystal growth, it can be made of high quality by preventing damage due to heat. Furthermore, the surface can be flattened by forming a crystal layer using the LPg method.
なお、実施例では、波長１．３μｍ組成のＧａＩｎＡｓ
Ｐ／ＩｎＰ半導体レーデについて説明したが、１．１〜
１．６μｍの波長範囲で所望の発光波長を選択しても良
い。また、結晶材料としては、ＧａＡｔＡｓ／ＧａＡ−
等の他の結晶系のものを採用しても良いことは勿論であ
る。In the example, GaInAs with a wavelength of 1.3 μm composition is used.
Although I explained P/InP semiconductor radar, 1.1~
A desired emission wavelength may be selected within the wavelength range of 1.6 μm. In addition, as a crystal material, GaAtAs/GaA-
It is of course possible to use other crystal systems such as.
［発明の効果コ
以上説明した如く、本発明に係る半導体レーザによれば
、低しきい値電流及び基本横モード動作が可能であると
共に、良好な再現性の下に活性層の幅を狭く制御するこ
とができるものである。[Effects of the Invention] As explained above, the semiconductor laser according to the present invention enables low threshold current and fundamental transverse mode operation, and also allows the width of the active layer to be narrowly controlled with good reproducibility. It is something that can be done.
第１図は、本発明の一実施例の概略構成を示す説明図、
第２図は、従来の半導体レーデの概略構成を示す説明図
である。
１０・・・半導体基板、１１・・・電流阻止層、１３・
・・溝、１４．１６・・・クラッド層、１５・・・活性
層、１７・・・キャップ層、２０・・・半導体レーザ。FIG. 1 is an explanatory diagram showing a schematic configuration of an embodiment of the present invention,
FIG. 2 is an explanatory diagram showing a schematic configuration of a conventional semiconductor radar. 10... Semiconductor substrate, 11... Current blocking layer, 13.
...Groove, 14.16...Clad layer, 15...Active layer, 17...Cap layer, 20...Semiconductor laser.
Claims (1)
帯幅の大きなＧａ＿ｘＩｎ＿１＿−＿ｘＡｓ＿ｙＰ＿１
＿−＿ｙ（０＜ｘ、ｙ＜１）を含んで形成された電流阻
止層と、該電流阻止層の所定領域を貫挿して前記半導体
基板の表面に達する深さで形成されたストライプ状の溝
と、該溝の底部及び前記電流阻止層上に形成された第１
導電型のクラッド層と、前記溝内の該クラッド層上に主
面を凹ませて形成され、かつ前記電流阻止層の上方の前
記クラッド層上に積層された前記活性層と、前記活性層
を覆うと共に前記溝を塞ぐようにして前記活性層上に形
成された第２導電型のクラッド層とを具備することを特
徴とする半導体レーザ。Ga_xIn_1_-_xAs_yP_1 having a larger forbidden band width than at least the active layer on the semiconductor substrate of the first conductivity type.
a current blocking layer formed including ____y (0<x, y<1); and a stripe-shaped stripe formed to a depth that penetrates a predetermined region of the current blocking layer and reaches the surface of the semiconductor substrate. a groove, a first layer formed on the bottom of the groove and the current blocking layer;
a conductive type cladding layer, the active layer formed on the cladding layer in the groove with a recessed main surface and laminated on the cladding layer above the current blocking layer; A semiconductor laser comprising: a cladding layer of a second conductivity type formed on the active layer so as to cover and close the groove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21845786A JPS6373682A (en) | 1986-09-17 | 1986-09-17 | Semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21845786A JPS6373682A (en) | 1986-09-17 | 1986-09-17 | Semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6373682A true JPS6373682A (en) | 1988-04-04 |
Family
ID=16720204
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21845786A Pending JPS6373682A (en) | 1986-09-17 | 1986-09-17 | Semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6373682A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0390077A2 (en) * | 1989-03-30 | 1990-10-03 | Oki Electric Industry Co., Ltd. | Laser diode and method for fabricating of the same |
| CN104264147A (en) * | 2014-08-08 | 2015-01-07 | 西安交通大学 | Metal cladding forming device and method restraining layer thickness and layer width of spare part with gap and grooves |
| CN104711507A (en) * | 2015-03-25 | 2015-06-17 | 西安交通大学 | Metal micro-coating forming system and method thereof |
-
1986
- 1986-09-17 JP JP21845786A patent/JPS6373682A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0390077A2 (en) * | 1989-03-30 | 1990-10-03 | Oki Electric Industry Co., Ltd. | Laser diode and method for fabricating of the same |
| CN104264147A (en) * | 2014-08-08 | 2015-01-07 | 西安交通大学 | Metal cladding forming device and method restraining layer thickness and layer width of spare part with gap and grooves |
| CN104711507A (en) * | 2015-03-25 | 2015-06-17 | 西安交通大学 | Metal micro-coating forming system and method thereof |
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