JPS6370478A - Manufacture of precise diffraction grating - Google Patents
Manufacture of precise diffraction gratingInfo
- Publication number
- JPS6370478A JPS6370478A JP61213804A JP21380486A JPS6370478A JP S6370478 A JPS6370478 A JP S6370478A JP 61213804 A JP61213804 A JP 61213804A JP 21380486 A JP21380486 A JP 21380486A JP S6370478 A JPS6370478 A JP S6370478A
- Authority
- JP
- Japan
- Prior art keywords
- diffraction grating
- resist
- mask
- thin film
- shifted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 26
- 239000004065 semiconductor Substances 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 239000010409 thin film Substances 0.000 claims abstract description 10
- 238000005530 etching Methods 0.000 claims abstract description 5
- 238000012546 transfer Methods 0.000 claims description 7
- 230000000737 periodic effect Effects 0.000 claims description 2
- 239000010408 film Substances 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 8
- 229910052681 coesite Inorganic materials 0.000 abstract 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract 4
- 239000000377 silicon dioxide Substances 0.000 abstract 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract 4
- 229910052682 stishovite Inorganic materials 0.000 abstract 4
- 229910052905 tridymite Inorganic materials 0.000 abstract 4
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/11—Comprising a photonic bandgap structure
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
（産業上の利用分野）
この発明は半導体結晶基板上に半導体レーザの共振器長
に対応した長さごとにπだけシフトした精密回折格子を
製造する方法に関するっ（従来の技術）
ＩｎＰ、 ＩｎＧａＡｓＰ 等の半導体結晶基板表面
に形成した周期的凹凸すなわち回折格子は、最近注目を
集めている分布帰還型半導体レーザにとって必須のもの
である。この回折格子を内蔵した分布帰還型半導体レー
ザは端面反射がない場合、２本の縦モードが発振するこ
とは理論的、実験的に明らかにされている。そこで端面
反射率に非対称性を与えることなどを施してやるとある
確率をもって単−縦モードで発振する。これは、レーザ
端面における回折格子の位相が縦モード特性に著しく影
響を与えるためである。そこで１１近単−縦モードで確
実に発振させるために半導体レーザの中央付近に回折格
子をπだけシフト（回折格子周期の半分）した分布帰還
型半導体レーザの研究が盛んになっできた。このπだけ
シフトした回折格子を作成する方法としては、ポジ型ホ
トレジストとネガ型ホトレジストを用いて二光束干渉露
光法で作成する方法があり、例えばＥｌｅｃｔｒｏｎｉ
ｃｓ Ｌｅｆｆｅｒｓ（Ｖｏｌ ２０．Ｎ１２４，１９
８４ ＰＰ１００８〜１０１０）アルイｉ：！昭和６１
年春季応用物理学会（講演番号ＩＰ−に−１）で作成方
法について発表されている。Ｅｌｅｃｔｒ−ｏｎｉｃｓ
Ｌｅｆｆｅｒｓ で発表された方法の概略を第２図
に示す。この方法では半導体基板上へ回折格子を転写す
る時に、まずポジ型レジストをマスクとして半導体基板
上へ回折格子を転写し１次にネガ型レジストをマスクと
して半導体基板上へ回折格子を転写するため最終的にポ
ジ型部とネガ型部で断差が住じるという欠点があった。[Detailed Description of the Invention] [Objective of the Invention] (Industrial Application Field) This invention manufactures a precision diffraction grating shifted by π for each length corresponding to the cavity length of a semiconductor laser on a semiconductor crystal substrate. Related to Method (Prior Art) Periodic unevenness, that is, a diffraction grating, formed on the surface of a semiconductor crystal substrate such as InP or InGaAsP is essential for distributed feedback semiconductor lasers, which have been attracting attention recently. It has been theoretically and experimentally clarified that a distributed feedback semiconductor laser with a built-in diffraction grating oscillates in two longitudinal modes when there is no end face reflection. Therefore, by making the end face reflectance asymmetry, etc., it will oscillate in a single longitudinal mode with a certain probability. This is because the phase of the diffraction grating at the laser end face significantly affects the longitudinal mode characteristics. Therefore, research has become active on distributed feedback semiconductor lasers in which the diffraction grating is shifted by π (half the period of the diffraction grating) near the center of the semiconductor laser in order to reliably oscillate in the 11-near single-longitudinal mode. A method for creating a diffraction grating shifted by π is to use a two-beam interference exposure method using a positive photoresist and a negative photoresist.
cs Leffers (Vol 20.N124, 19
84 PP1008-1010) Alui i:! Showa 61
The creation method was presented at the 2015 Spring Society of Applied Physics (lecture number IP-ni-1). Electr-onics
Figure 2 shows an outline of the method announced in Leffers. In this method, when transferring a diffraction grating onto a semiconductor substrate, first, a positive resist is used as a mask to transfer the diffraction grating onto the semiconductor substrate, and then a negative resist is used as a mask to transfer the diffraction grating onto the semiconductor substrate. However, there was a drawback that there was a difference between the positive mold part and the negative mold part.
これは昭和６１年春季応用物理学会での発表においても
同様であった。このような断差があると単−縦モードで
発振することができなくなり、大きな問題点であった。This was also the case in the presentation at the 1986 spring meeting of the Japan Society of Applied Physics. Such a difference makes it impossible to oscillate in a single longitudinal mode, which is a big problem.
（発明が解決しようとする問題点）
πだけシフトした回折格子を作成する際、従来技術では
ポジ部分とネガ部分を別々にエツチングして半導体基板
に回折格子を転写するため、断差を生じるという問題点
があった。そこで本発明の目的はポジ部分とネガ部分を
同時にエツチングすることにより断差のない回折格子周
期の半分のπだけシフトした回折格子を製造することで
ある。(Problem to be solved by the invention) When creating a diffraction grating shifted by π, the conventional technology etches the positive and negative parts separately and transfers the diffraction grating to the semiconductor substrate, resulting in a difference. There was a problem. Therefore, an object of the present invention is to manufacture a diffraction grating shifted by π, which is half the period of the diffraction grating, without any deviation by etching the positive portion and the negative portion simultaneously.
（問題点を解決するための手段と作用）ポジ部分とネガ
部分で断差を生じさせないために半導体基板上にＳｉｎ
、あるいはＳｉＮなどの薄膜をつけ、その上にπだけシ
フトした回折格子を作成した後、この薄膜をマスクとし
てポジ部およびネガ部を同時にエツチングすることによ
り半導体基板上へ回折格子を転写するものである。この
時Ｓ ｉｏ＊ 、 Ｓ ｉＮ などの薄膜にはホトレ
ジストを塗布する前に半導体レーザの共振器長の周期で
凹凸を設けておく必要がある。(Means and actions for solving the problem) In order to prevent a difference between the positive part and the negative part,
Alternatively, a thin film such as SiN is attached, a diffraction grating shifted by π is created on it, and then the positive and negative parts are simultaneously etched using this thin film as a mask to transfer the diffraction grating onto the semiconductor substrate. be. At this time, it is necessary to provide a thin film such as S io * or S iN with irregularities at a period of the resonator length of the semiconductor laser before applying photoresist.
（実施例） 以下この発明の実施例第１図を参照して説明−・４る。(Example) An embodiment of the present invention will be described below with reference to FIG. 1.
まず第１図（ａ）に示したようにＩｎＰ基板上Ｕ；ζ−
８ｉｎ！Ｑ３膜を例えばプラズマＣＶＤ法などで約１０
０ＯＡの厚さにつける。次にホトプロセスとエツチング
により半導体レーザの共振器長の周期で凹凸を設け、そ
の深さは約５０ＯＡとした。次に第１図（ｂ）に示した
ように凹の部分にネガ型ホトレジスト（１９を約５０Ｏ
Ａの厚さに塗布する。この時日の部分のみにネガ型ホト
レジストα３を塗布するためには、まず全面にネガ型ホ
トレジスト（１３１を塗布した後、ポジ型ホトレジスト
α蜀を全面に塗布し、ホトプロセスにより凹部のみにポ
ジ型ホトレジストα４を残す。この後、ポジ型ホトレジ
ストＵをマスクとして凸部のネガ型ホトレジ２８０階を
除去し。First, as shown in FIG. 1(a), on an InP substrate U;
8in! Q3 film is made by plasma CVD method etc.
Apply to a thickness of 0OA. Next, by photoprocessing and etching, irregularities were formed at a period equal to the resonator length of the semiconductor laser, and the depth thereof was approximately 50 OA. Next, as shown in FIG. 1(b), apply negative photoresist (19 to about 500O
Apply to the thickness of A. In order to apply negative photoresist α3 only to this area, first apply negative photoresist (131) to the entire surface, then apply positive photoresist α3 to the entire surface, and use a photo process to apply positive photoresist only to the concave areas. Photoresist α4 is left behind.After this, using positive photoresist U as a mask, the negative photoresist layer 280 on the convex portion is removed.
次にポジ型ホトレジストａ初を除去すればよい。第１図
（ｂ）に示したように全面にポジ型ホトレジスト０荀を
約５００λの厚さに塗布し、二光束干渉露光法により露
光する。次に第１図（Ｃ）に示したように現俄してこの
ポジ型ホトレジストαＪをマスクとしてＳ ｉ Ｏ２Ｕ
上へ１次の回折格子をエツチングにより転写する。さら
に第１図（ｄ）に示すようにネガ型ホトレジストｑツを
現像して、このネガ型ホトレジストα３をマスクとして
Ｓｉｎ、αつ上へ回折格子を転写する。この時ポジ部の
５ｉｎ２もエツチングされるが、あらかじめポジ部のＳ
ｉｎ、は約ｓ ｏ ｏ Ａ玉ｒ；ｉくなっているため、
なくなってしまうことはなく最終的にπだけシフトした
５ｉｎ２の回折格子が作成できる。最後に第１図（ｅｌ
に示したように５ｉｎ２をマスクとして回折格子をＩｎ
Ｐ基板υυ上へ転写してπシフト回折格子ができあがる
。これより笥２図に見られたような断差を生じることな
く周期が１９００〜２５０ＯＡのπシフト回折格子を再
現性よく作成でき、深さも５００Ａ程度であった。Next, the positive type photoresist a must be removed. As shown in FIG. 1(b), a positive type photoresist is coated on the entire surface to a thickness of about 500λ, and exposed by a two-beam interference exposure method. Next, as shown in FIG. 1(C), using this positive photoresist αJ as a mask, S i O2U
A first order diffraction grating is transferred onto it by etching. Further, as shown in FIG. 1(d), the negative photoresist q is developed, and the diffraction grating is transferred onto Sin, α using this negative photoresist α3 as a mask. At this time, the positive part 5in2 is also etched, but the positive part S
In becomes approximately so o A ball r;i, so
In the end, a 5in2 diffraction grating shifted by π can be created. Finally, Figure 1 (el
As shown in Figure 2, the diffraction grating is
A π-shift diffraction grating is completed by transferring it onto a P substrate υυ. As a result, a π-shifted diffraction grating with a period of 1900 to 250 OA could be produced with good reproducibility without producing the difference seen in Figure 2, and the depth was also about 500 Å.
他の実施例としては用いる半導体基板はＩｎＰに限るも
のではな（Ｉｎ０ａＡｓＰ、Ｏａｔ’ｘＬＡｓ 、Ｇａ
Ａｓ等なんでもよい。要するに本発明の決旨を逸脱しな
い範囲で種々変形して実施するこさができる。In other embodiments, the semiconductor substrate used is not limited to InP (In0aAsP, Oat'xLAs, Ga
Anything such as As is fine. In short, various modifications can be made without departing from the spirit of the present invention.
本発明によれば、断差の全くないπシフト回折格子の作
成が可能であり１分布帰還型半導体レーザの単−縦モー
ド発振確率が著しく増加するなど将来の光Ａ信分野に及
ぼす影響は多大であるっAccording to the present invention, it is possible to create a π-shifted diffraction grating with no difference at all, and the probability of single-longitudinal mode oscillation of a monodistribution feedback semiconductor laser increases significantly, which will have a great impact on the future field of optical A/C communications. It is
第１図はこの発明の一実施例を示す図であり、第２図は
従来の例を示す図である。
１１・・・ＩｎＰ基版
１２・・・Ｓｉｎ。
１３・・・ネガ型ホトレジスト
１４・・・ポジ型ホトレジスト
代理人 弁理士 則 近 憲 佑
同 竹 花 喜久男
（ｂ）
（Ｃ）
第２図
９ ′：Ｓ 寸η０４ ミ η・＋
＋（（＼FIG. 1 is a diagram showing an embodiment of the present invention, and FIG. 2 is a diagram showing a conventional example. 11...InP base plate 12...Sin. 13...Negative photoresist 14...Positive photoresist Agent Patent attorney Nori Chika Ken Yudo Kikuo Takehana (b) (C) Figure 2 9': S dimension η04 Mi η・+
+((＼
Claims (1)
に周期構造を形成するにあたり、基板表面にＳｉＯ＿２
もしくはＳｉＮなどの薄膜をつける工程と前記薄膜上に
半導体レーザの共振器長の周期で凹凸を設ける工程と、
凹部にネガ型ホトレジストを設け、その上全面にポジ型
ホトレジストを設ける工程と、二光束干渉露光法により
ポジ型ホトレジスト上に回折格子を作成し、これをマス
クとして薄膜上に回折格子を転写する工程と、ネガ型ホ
トレジスト上に回折格子を作成し、これをマスクとして
薄膜上に回折格子を転写する工程と、薄膜をマスクとし
て基板上に回折格子を転写し、半導体レーザの共振器長
に対応する長さごとに回折格子周期の半分のπだけシフ
トした精密回折格子を得ることを特徴とする精密回折格
子の製造方法。When forming a periodic structure on a substrate using two-beam interference exposure method and etching method, SiO_2 is applied to the surface of the substrate.
Alternatively, a step of applying a thin film such as SiN, and a step of providing unevenness on the thin film at a period equal to the resonator length of the semiconductor laser;
A process of providing a negative photoresist in the recess and a positive photoresist on the entire surface, and a process of creating a diffraction grating on the positive photoresist using a two-beam interference exposure method and using this as a mask to transfer the diffraction grating onto a thin film. The first step is to create a diffraction grating on a negative photoresist and use this as a mask to transfer the diffraction grating onto a thin film.The second step is to use the thin film as a mask to transfer the diffraction grating onto a substrate to correspond to the resonator length of the semiconductor laser. A method for manufacturing a precision diffraction grating, characterized by obtaining a precision diffraction grating whose length is shifted by π, which is half the diffraction grating period.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61213804A JPS6370478A (en) | 1986-09-12 | 1986-09-12 | Manufacture of precise diffraction grating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61213804A JPS6370478A (en) | 1986-09-12 | 1986-09-12 | Manufacture of precise diffraction grating |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6370478A true JPS6370478A (en) | 1988-03-30 |
Family
ID=16645319
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61213804A Pending JPS6370478A (en) | 1986-09-12 | 1986-09-12 | Manufacture of precise diffraction grating |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6370478A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2006025315A1 (en) * | 2004-08-31 | 2008-05-08 | 東レ株式会社 | Automotive bonnet |
| KR100925091B1 (en) * | 2006-03-15 | 2009-11-05 | 가부시키가이샤 고베 세이코쇼 | Automobile hood |
| US8053146B2 (en) * | 2005-02-10 | 2011-11-08 | Ovd Kinegram Ag | Multi-layer body including a diffractive relief structure and method for producing the same |
-
1986
- 1986-09-12 JP JP61213804A patent/JPS6370478A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2006025315A1 (en) * | 2004-08-31 | 2008-05-08 | 東レ株式会社 | Automotive bonnet |
| US8075048B2 (en) | 2004-08-31 | 2011-12-13 | Toray Industries, Inc. | Bonnet for automobile having automobiles that protects the heads of pedestrians |
| JP4873309B2 (en) * | 2004-08-31 | 2012-02-08 | 東レ株式会社 | Automotive bonnet |
| US8053146B2 (en) * | 2005-02-10 | 2011-11-08 | Ovd Kinegram Ag | Multi-layer body including a diffractive relief structure and method for producing the same |
| US8450029B2 (en) | 2005-02-10 | 2013-05-28 | Ovd Kinegram Ag | Multi-layer body and process for the production of a multi-layer body |
| KR100925091B1 (en) * | 2006-03-15 | 2009-11-05 | 가부시키가이샤 고베 세이코쇼 | Automobile hood |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS61156003A (en) | Production of diffraction grating | |
| JPH0553289A (en) | Production of phase shift reticle | |
| JPH02224386A (en) | Manufacture of lambda/4 shift type diffraction grating | |
| JPS61190368A (en) | Formation of fine pattern | |
| JPS6370478A (en) | Manufacture of precise diffraction grating | |
| JP2738623B2 (en) | Method of forming diffraction grating | |
| US5221429A (en) | Method of manufacturing phase-shifted diffraction grating | |
| JPS60235426A (en) | Manufacture of semiconductor integrated circuit device | |
| JPS6370477A (en) | Manufacture of phase shift type diffraction grating | |
| JP2003075619A (en) | Method for forming diffraction grating | |
| EP0490320A2 (en) | A method for producing a diffraction grating | |
| JPH02213182A (en) | Manufacture of diffraction grating | |
| JPS6381885A (en) | Manufacture of phase shift type deflection lattice | |
| JPS62245204A (en) | Production of diffraction grating | |
| JPS61289688A (en) | Manufacture of diffraction grating | |
| JP3112153B2 (en) | Grating fabrication method | |
| JPS62165392A (en) | Manufacture of diffraction grating | |
| JP2739793B2 (en) | Manufacturing method of three-phase type phase shift reticle | |
| JPH0473650A (en) | Mask for fine working | |
| JPS6081829A (en) | Etching process of semiconductor | |
| JPS6370476A (en) | Manufacture of phase shift type diffraction grating | |
| JPS6370475A (en) | Manufacture of phase shift type diffraction grating | |
| JPH03284703A (en) | Optical glass member for generating prescribed phase difference and production thereof | |
| JPS63150984A (en) | Forming method for diffraction grating | |
| JP2786229B2 (en) | Manufacturing method of diffraction grating |