JPS6365069A - Sputtering device - Google Patents
Sputtering deviceInfo
- Publication number
- JPS6365069A JPS6365069A JP20951686A JP20951686A JPS6365069A JP S6365069 A JPS6365069 A JP S6365069A JP 20951686 A JP20951686 A JP 20951686A JP 20951686 A JP20951686 A JP 20951686A JP S6365069 A JPS6365069 A JP S6365069A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- substrates
- target
- magnetic material
- magnetic field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004544 sputter deposition Methods 0.000 title claims description 7
- 239000000758 substrate Substances 0.000 claims abstract description 85
- 239000010408 film Substances 0.000 abstract description 33
- 238000009826 distribution Methods 0.000 abstract description 8
- 239000000696 magnetic material Substances 0.000 abstract description 5
- 239000010409 thin film Substances 0.000 abstract description 5
- 239000002245 particle Substances 0.000 abstract description 2
- 239000013077 target material Substances 0.000 abstract 1
- 230000033001 locomotion Effects 0.000 description 15
- 230000007246 mechanism Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000011162 core material Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はスパッタ装置に係り、特に、膜厚分布の均一な
磁性体膜を成膜できる構成に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a sputtering apparatus, and particularly to a configuration capable of forming a magnetic film with a uniform thickness distribution.
磁気記録方式の高密度化を目的とし、磁気ヘッドの小型
化を図るため、薄膜プロセスを用いて作成した薄膜磁気
ヘッドがある。この中で、コア材料である磁性体膜では
膜の磁気特性を満たすため、−軸異方性をつける必要が
あり、成膜には特別の工夫を要する。１［の材料はパー
マロイ（鉄、ニッケルの合金）をはじめ、合金材料、成
分比等で種々のものが用いられるが、いずれも基本的な
考え方は以下に述べるものと同じである。薄膜の製法に
ついても、スパッタ法、メッキ法等が一般的に用いられ
るが、ここではスパッタ法について述べる。For the purpose of increasing the density of magnetic recording systems and miniaturizing magnetic heads, there are thin-film magnetic heads manufactured using a thin-film process. Among these, the magnetic film that is the core material needs to have -axis anisotropy in order to satisfy the magnetic properties of the film, and special measures are required to form the film. Various materials are used for the material 1, including permalloy (an alloy of iron and nickel), alloy materials, component ratios, etc., but the basic idea is the same as described below. Sputtering methods, plating methods, and the like are generally used for manufacturing thin films, and the sputtering method will be described here.
磁性体膜を成膜する際に求められる特性は、先に述べた
一軸異方性を付与することにより得られる磁気特性と、
基板面内での膜厚分布の均一性。The properties required when forming a magnetic film are the magnetic properties obtained by imparting uniaxial anisotropy as described above, and
Uniformity of film thickness distribution within the substrate plane.
及び段差部での膜厚を確保する点にある。and securing the film thickness at the step portion.
−軸異方性の付与は成膜時に基板に平行磁界を印加する
ことによりなされる６通常は外部に空芯コイルを置き、
これに通電することにより磁界を発生している。このと
き基板と磁界の向きを相対的に固定して成膜することが
重要である。すなわち、例えば、基板を回転させるとき
、印加磁界も同一の角速度で同一方向に回転させなけれ
ばならない、従って、以下に述べる自転、もしくは自公
転運動、もしくは、基板傾斜等の基板の運動を考えると
きの大きな障害となっていた。-Axis anisotropy is imparted by applying a parallel magnetic field to the substrate during film formation.6 Usually, an air-core coil is placed externally.
By energizing this, a magnetic field is generated. At this time, it is important to form a film while fixing the direction of the magnetic field relative to the substrate. That is, for example, when the substrate is rotated, the applied magnetic field must also be rotated in the same direction at the same angular velocity.Therefore, when considering the movement of the substrate such as rotation, rotational movement, or substrate tilt as described below. This was a major obstacle.
一方、膜厚分布の均一化の問題では、一枚の基板内での
膜厚不均一を改善するため自転運動が、又、同時に処理
される複数枚の基板変動を少なくするために公転運動が
なされる。特開昭５８−１７４５５７７号公報の様に、
両者を同時に実現した自公転運動を可能にするものもあ
る。On the other hand, in the problem of uniformity of film thickness distribution, rotational motion is used to improve the unevenness of film thickness within a single substrate, and orbital motion is used to reduce fluctuations in multiple substrates that are processed at the same time. It will be done. As in Japanese Patent Application Laid-open No. 58-1745577,
There are some that achieve both at the same time and enable rotation and revolution.
次に、基板面内に作成された段差部で膜厚確保の問題が
ある。これに対しては、例えば、特開昭５６−１５６７
６５号公報に述べられている様に、基板設置台をターゲ
ットに対し傾斜させるのが良い。Next, there is the problem of ensuring film thickness at the stepped portion created within the plane of the substrate. In contrast, for example, JP-A-56-1567
As described in Japanese Patent No. 65, it is preferable to tilt the substrate mounting table with respect to the target.
このように、膜厚分布の均−化及び段差部での膜厚確保
の観点から、基板の自公転運動及び基板傾斜保持が有効
であるが、基板に磁界を印加する方式では印加磁界を基
板と共に自公転及び傾斜させることが必要となり、不可
能か、又は、出来ても装置が非常に大がかりになる。In this way, from the perspective of equalizing the film thickness distribution and ensuring film thickness at stepped portions, it is effective to rotate the substrate and maintain the substrate tilt.However, in the method of applying a magnetic field to the substrate, the applied magnetic field is At the same time, it is necessary to rotate and tilt the device, which is either impossible or would require a very large-scale device.
［発明が解決しようとする問題点〕
このように従来技術では、磁性体膜に一軸異方性を付与
するため、成膜時基板に平行磁界を印加する方法がとら
れていたが、これによると膜厚の均一性を確保するため
の基板の運動について配慮されておらず、非常に大がか
りになる問題があった。[Problems to be solved by the invention] As described above, in the conventional technology, in order to impart uniaxial anisotropy to a magnetic film, a method was used in which a parallel magnetic field was applied to the substrate during film formation. The problem was that no consideration was given to the movement of the substrate to ensure uniformity of film thickness, resulting in a very large-scale problem.
を得ることにある。It's about getting.
本発明の要点は、基板毎に永久磁石で磁界を印加するこ
とにより、磁界印加系と基板を組にして独立した系とし
、この系を単位として自公転運動、又、基板を傾斜させ
るようにしたことである。The main point of the present invention is that by applying a magnetic field to each substrate using a permanent magnet, the magnetic field application system and the substrate are combined into an independent system, and this system can be used as a unit to perform rotation-revolution motion or to tilt the substrate. That's what I did.
その結果、基板の回転・傾斜等の動作に伴って一体に構
成された永久磁石も同時に回転・傾斜するため、基板に
印加される平行磁界も基板との相対位置関係を失なうこ
となく追従動作する。さらに基板毎に永久磁石を設ける
ことができ、この結果、多数の基板を同時に処理する場
合でも、基板間の規制がなく、全く独立した運動が可能
である。As a result, as the board rotates and tilts, the integrated permanent magnet also rotates and tilts at the same time, so the parallel magnetic field applied to the board also follows without losing its relative positional relationship with the board. Operate. Furthermore, a permanent magnet can be provided for each substrate, and as a result, even when a large number of substrates are processed at the same time, there is no regulation between the substrates and completely independent movements are possible.
以下、本発明の一実施例を第１図により説明する０図で
は、真空容器１内にターゲット電極２及び基板側電極３
が配置されている。Hereinafter, one embodiment of the present invention will be explained with reference to FIG. 1. In FIG.
is located.
真空容器１内は排気口５より図示しない排気装置により
、通常１０−’ＴｏｒｒＴｏｒｒ台真空に排気した後、
給気口４より図示しないガス供給系により所望の、例え
ば、アルゴンガスを流量制御しながら供給し、真空容器
１の中を、例えば、１０−２〜ｌ Ｏ−’ Ｔｏｒｒ台
の一定の雰囲気ガス圧に保つ。After the inside of the vacuum container 1 is evacuated to a vacuum level of usually 10-'Torr by an exhaust device (not shown) through the exhaust port 5,
A desired amount of, for example, argon gas is supplied from the air supply port 4 through a gas supply system (not shown) while controlling the flow rate, and the inside of the vacuum container 1 is kept at a constant atmospheric gas of, for example, 10-2 to 1 O-' Torr. Keep it under pressure.
ターゲット電極２は、絶縁物６により真空容器１により
絶縁保持されたターゲット７、永久磁石８、永久磁石８
から出る磁束の帰路を与える鉄心９、及び、それらを収
納する容１６１０と、真空容器１と同電位のアースシー
ルド１１からなる。The target electrode 2 includes a target 7 , a permanent magnet 8 , and a permanent magnet 8 that are insulated and held in the vacuum container 1 by an insulator 6 .
It consists of an iron core 9 that provides a return path for the magnetic flux emitted from the core, a container 1610 that houses them, and an earth shield 11 that has the same potential as the vacuum container 1.
基板電極３は絶縁物１２により真空容器１から絶縁保持
さた基板ホルダ１３と、基板ホルダ１３に保持された基
板１４と、基板１４に平行磁場を印加する永久磁石１５
からなる。The substrate electrode 3 includes a substrate holder 13 that is insulated from the vacuum container 1 by an insulator 12, a substrate 14 held by the substrate holder 13, and a permanent magnet 15 that applies a parallel magnetic field to the substrate 14.
Consisting of
電気的には、真空容器１は通常接地電位とし、ターゲッ
トにはグロー放電を維持する負の電源を接続する。目的
によっては主に１３．５６ＭＨｚの高周波電源も多用さ
れる。基板電極３はここでは接地電位としているが、バ
イアススパッタの目ターゲット電極２と基板電極３の間
にグロー放電が生じ、プラズマが形成される。このとき
、ターゲット７の前面には、ここで永久磁石８によりマ
グネトロン磁場が発生しており、局部的に高密度のプラ
ズマが生じる。これによりスパッタされた粒子は基板１
４上に付着して薄膜を形成する。ここで、基板１４には
永久磁石１５により平行磁場が印加されており、基板１
４上に生成された膜には永久磁石１５で印加された磁界
の向きに磁化容易軸をもつ一軸異方性が付与される。Electrically, the vacuum vessel 1 is normally at ground potential, and the target is connected to a negative power source that maintains glow discharge. Depending on the purpose, a high frequency power source of 13.56 MHz is often used. Although the substrate electrode 3 is at ground potential here, glow discharge occurs between the target electrode 2 and the substrate electrode 3 during bias sputtering, and plasma is formed. At this time, a magnetron magnetic field is generated by the permanent magnet 8 in front of the target 7, and high-density plasma is generated locally. As a result, the sputtered particles are transferred to the substrate 1.
4 to form a thin film. Here, a parallel magnetic field is applied to the substrate 14 by a permanent magnet 15, and the substrate 14 is
The film formed on the film is given uniaxial anisotropy with an axis of easy magnetization in the direction of the magnetic field applied by the permanent magnet 15.
さられ、基板側電極３は回転駆動機構１７に接続され、
基板１４は自身の中心を回転軸とする、いわゆる、自転
運動１８が可能となっているこれにより、成膜中、自転
運動を続ける結果、基板１４面上に生成された膜の膜厚
分布を均一化することができる。ここで、基板１４は永
久磁石１５と一体に回転駆動されるため、印加される磁
場との相対位置関係は自転動作中不変のため、作成した
膜に良好な磁気特性が付与できる。The substrate side electrode 3 is connected to the rotational drive mechanism 17,
The substrate 14 is capable of rotational movement 18 with its own center as the rotation axis.As a result of this continuous rotational movement during film formation, the film thickness distribution of the film formed on the surface of the substrate 14 can be controlled. It can be made uniform. Here, since the substrate 14 is rotationally driven together with the permanent magnet 15, the relative positional relationship with the applied magnetic field remains unchanged during the rotation operation, so that good magnetic properties can be imparted to the produced film.
第２図に基板面の正面図を示す０本例では図示のようバ
捧状の永久磁石１５を対にして用いることにより、簡単
な磁石形状で基板１４の範囲内に平行性の良い磁界１９
を印加することが出来る。FIG. 2 shows a front view of the substrate surface. In this example, by using a pair of bar-like permanent magnets 15 as shown in the figure, a magnetic field 19 with good parallelism is generated within the range of the substrate 14 with a simple magnet shape.
can be applied.
第３図は、さらに、磁界１９が周辺でふくらむのを防止
するため、永久磁石１５の端部に磁性体でできた突起２
０を設けたものである。これにより磁界１９の平行性が
さらに改善される。FIG. 3 further shows a protrusion 2 made of magnetic material at the end of the permanent magnet 15 in order to prevent the magnetic field 19 from expanding around the periphery.
0 is set. This further improves the parallelism of the magnetic field 19.
第４図は永久磁石１５の周辺に磁界の帰路を構成する鉄
心２１を設けたものである。これにより同一の磁石の大
きさで磁界の強さを約二倍以上に強める。又は、磁石サ
イズを小型化できる。In FIG. 4, an iron core 21 is provided around the permanent magnet 15 to form a return path for the magnetic field. This more than doubles the strength of the magnetic field with the same magnet size. Alternatively, the magnet size can be reduced.
第５図は板状磁石２２と基板１４を重ね合わせた構成で
あり、基板の取付は密度を上げる場合に有効となる。FIG. 5 shows a structure in which a plate magnet 22 and a substrate 14 are stacked on top of each other, and mounting of the substrate is effective when increasing the density.
第６図と第７図に多数枚の基板を同時に処理する場合の
基板ホルダの構成例を示す、第６図は断面図、第７図は
正面図である。これは第１図の構−成に加え、真空容器
１に取付けた大径歯車と、基し騰ホルダ２３の外周部に
設けた歯車部２７をかみ合わせ、さらに回転摺動支持部
２８を介して公転部２４に取付けたものである。こうす
ることにより、回転駆動機［１７で公転部２４を矢印２
９の方向に回転させると、基板ホルダ２３は歯車部２７
により矢印３０の回転駆動を実現することができる。基
板１４と永久磁石１５の配置は第１図のものと同一のま
ま、その組数を増すだけで本実施例の機構を用いること
により多数枚の基板を同時に処理できる。自公転機構を
実現することが可能となる。ここで、自転運動により基
板面内の膜厚分布均一性の改善が、公転運動により基板
間の変動幅の改善がなされる。FIGS. 6 and 7 show an example of the configuration of a substrate holder for processing a large number of substrates at the same time. FIG. 6 is a sectional view, and FIG. 7 is a front view. In addition to the configuration shown in FIG. It is attached to the revolution part 24. By doing this, the rotational drive machine [17 moves the revolution part 24 in the direction indicated by the arrow 2].
When rotated in the direction 9, the substrate holder 23 rotates into the gear portion 27.
The rotational drive of the arrow 30 can be realized by this. The arrangement of the substrates 14 and permanent magnets 15 remains the same as in FIG. 1, and by simply increasing the number of sets, a large number of substrates can be processed simultaneously by using the mechanism of this embodiment. It becomes possible to realize a rotation-revolution mechanism. Here, the rotational motion improves the uniformity of the film thickness distribution within the substrate plane, and the orbital motion improves the variation width between the substrates.
このときのターゲット形状は、はぼ、基板設置範囲に対
応する大面積ターゲットとすることも可能であるが、第
８図のように、小面積のターゲット電極２を複数個配置
する、又は、第９図のように、ターゲット電極２と基板
加熱ヒータ３１を交互に並べることも可能である。真空
中では１ａＪ当たり９．８ Ｎの力が加わるため、ター
ゲットの大泗積化はその強度設計上不必要に厚くするこ
とが必要となり、小面積のターゲットを複数測置いた方
が有利となる場合が多い、又１作成する膜の材料により
適正温度が変るが、一般には、ある程度の温度管理が必
要となる場合が多い。The target shape at this time can be a large-area target corresponding to the substrate installation range, but it is also possible to arrange a plurality of small-area target electrodes 2 as shown in FIG. As shown in FIG. 9, it is also possible to alternately arrange the target electrodes 2 and substrate heaters 31. In a vacuum, a force of 9.8 N per 1aJ is applied, so if the target is made large, it is necessary to make it unnecessarily thick due to its strength design, and it is more advantageous to place multiple small-area targets. In many cases, the appropriate temperature varies depending on the material of the film to be produced, but in general, a certain degree of temperature control is often required.
以上、基板とターゲットが平行平板状に対向している例
を示したが、第１０図に同軸円筒状に対向している例を
示す１図ではターゲット７がターゲット支持台３２に絶
縁支持され、基板１４が永久磁石１５と共に一体に固定
されている基板ホルダ２３が回転環３３に円筒状に回転
摺動可能に等間隔に配置されている０回転環３３を図示
しない外部駆動系により、矢印２９の方向に回転させる
と、基板ホルダ２３は歯車部２７の効果により図示しな
い大径歯車との作用で矢印３０の回転運動を実現できる
。ここでは外周に基板、内周側にターゲットを配置した
が、逆に外周側にターゲット、内周側に基板を配置する
ことも可能である。Above, an example has been shown in which the substrate and the target face each other in a parallel plate shape, but in FIG. The substrate holder 23 to which the substrate 14 is integrally fixed together with the permanent magnet 15 rotates and slides around the rotation ring 33 in a cylindrical shape and is arranged at equal intervals so as to be rotatable and slidable. When the substrate holder 23 is rotated in the direction indicated by the arrow 30, the effect of the gear portion 27 allows the substrate holder 23 to realize the rotational movement indicated by the arrow 30 through the action of the large-diameter gear (not shown). Here, the substrate is arranged on the outer periphery and the target is arranged on the inner periphery, but it is also possible to arrange the target on the outer periphery and the substrate on the inner periphery.
第１１図、第１２図に基板傾斜機構を備えた例を示す、
第１１図は断面図、第１２図は正面図である０図におい
て、真空容器１内に大径歯車２６が部材３４を介して固
着されている。公転部２４は摺動可能に真空容器１に支
持され、部材３５の歯車部３６を介して回転駆動機構１
７に接続されている。基板及び永久磁石を挿着する基板
ホルダ１３は傾斜ガイド３７に摺動可能に支持され、歯
車部２７で大径歯車２６に接続されている自転駆動部材
３８に球形接合部３９を介して接合される。FIGS. 11 and 12 show an example equipped with a substrate tilting mechanism,
11 is a sectional view, and FIG. 12 is a front view. In FIG. 0, a large-diameter gear 26 is fixed in the vacuum container 1 via a member 34. The revolution part 24 is slidably supported by the vacuum container 1 and is connected to the rotational drive mechanism 1 via a gear part 36 of a member 35.
7 is connected. A substrate holder 13 into which a substrate and a permanent magnet are inserted is slidably supported by an inclined guide 37, and is joined via a spherical joint 39 to a rotation drive member 38 connected to a large-diameter gear 26 at a gear portion 27. Ru.
自転駆動部材３８は公転部２４に摺動可能に支持されて
いる、さらに、傾斜調整機構４０を外部がら回転操作す
ることにより、ねじ部４１を介して接続されている部材
４２を矢印４３の方向に駆動し、その結果、傾斜ガイド
の角度が変わり、基板ホルダ１３の傾斜角度を制御する
ことが可能となっている６以上の構成で回転駆動機構１
７が回転することにより、公転部を経て基板ホルダ１３
の公転運動が得られ、歯車部２７の作用により同時に自
転運動も得られる。この公転速度は比較的ゆっくりした
ものであり、動作中に傾斜調整機構４０を手動操作する
ことにより傾斜角度を変更することが可能である。モー
タ等の駆動機構を備えることにより、これも自動化する
ことは当然可能である。The rotation drive member 38 is slidably supported by the revolution part 24. Furthermore, by rotating the inclination adjustment mechanism 40 from the outside, the member 42 connected via the threaded part 41 is rotated in the direction of the arrow 43. The rotational drive mechanism 1 has six or more configurations, and as a result, the angle of the tilt guide changes, making it possible to control the tilt angle of the substrate holder 13.
7 rotates, the substrate holder 13 passes through the revolution part.
A revolution motion is obtained, and an autorotation motion is also obtained at the same time due to the action of the gear portion 27. This revolution speed is relatively slow, and the inclination angle can be changed by manually operating the inclination adjustment mechanism 40 during operation. Of course, this can also be automated by providing a drive mechanism such as a motor.
本実施例によれば、自公転運動に加えて、基板傾斜角度
も制御可能になることにより、基板表面に作成された段
差部への膜厚を、傾斜角度を適切に制御することにより
、所望の厚さが得られる様になる特徴をもつ。According to this embodiment, in addition to the rotational movement, it is also possible to control the substrate inclination angle, so that the film thickness on the stepped portion created on the substrate surface can be adjusted to the desired thickness by appropriately controlling the inclination angle. It has the characteristic that it is possible to obtain a thickness of .
本発明によれば、一つの基板面内の膜厚分布の均一性を
改善することができ、多数枚の基板を同時に処理する際
に、基板面での膜厚変動も少なくすることができる。According to the present invention, it is possible to improve the uniformity of the film thickness distribution within the plane of one substrate, and when processing a large number of substrates at the same time, it is possible to reduce variations in the film thickness on the substrate plane.
第１図は本発明の一実施例の断面図、第２図はｆ５１図
の要部を示す正面図、第３図ｙｔ第４図。
第５図は第２図の変形例図、第６図は本発明の他の実施
例の断面図、第７図は第６図の正面図、第８図、第９図
は異なる部位を示す正面図、第１０図は異なる実施例を
示す断面図、第１１図は基板傾斜角度を備えた例の断面
図、第１２図は第１１図の正面図である。
１・・・真空容器、７・・・ターゲット、１４・・・裁
板。
１８．３０・・・自転回転、１５・・・永久磁石、２９
・・・乎６１２］
専（Ｏの
塾１］区FIG. 1 is a cross-sectional view of an embodiment of the present invention, FIG. 2 is a front view showing the main parts of FIG. FIG. 5 is a modification of FIG. 2, FIG. 6 is a sectional view of another embodiment of the invention, FIG. 7 is a front view of FIG. 6, and FIGS. 8 and 9 show different parts. 10 is a sectional view showing a different embodiment, FIG. 11 is a sectional view of an example with a substrate tilt angle, and FIG. 12 is a front view of FIG. 11. 1...Vacuum container, 7...Target, 14...Cutting board. 18.30... Rotation, 15... Permanent magnet, 29
...乎612] SEN (O's cram school 1) Ward
Claims (1)
たターゲットと、前記ターゲットと略対向位置に支持さ
れた基板とからなり、前記基板は該基板の略中心を軸に
自転回転駆動されるものにおいて、 前記基板は前記基板面に略平行な磁界を発生するように
配置した一つもしくは一対の永久磁石と組にし、かつ、
相対的位置を固定して配置したことを特徴とするスパッ
タ装置。 ２、特許請求の範囲第１項において、 前記基板は複数枚よりなり、それらの略中心軸に公転回
転運動されることを特徴とするスパッタ装置。[Scope of Claims] 1. Consisting of a vacuum container, a target electrically insulated and supported from the vacuum container, and a substrate supported at a position substantially opposite to the target, the substrate having an axis centered approximately at the center of the substrate. In the device that is driven to rotate on its own axis, the substrate is paired with one or a pair of permanent magnets arranged to generate a magnetic field substantially parallel to the substrate surface, and
A sputtering device characterized by being arranged with fixed relative positions. 2. The sputtering apparatus according to claim 1, wherein the substrate is made up of a plurality of substrates and is rotated around their central axes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20951686A JPS6365069A (en) | 1986-09-08 | 1986-09-08 | Sputtering device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20951686A JPS6365069A (en) | 1986-09-08 | 1986-09-08 | Sputtering device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6365069A true JPS6365069A (en) | 1988-03-23 |
Family
ID=16574086
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20951686A Pending JPS6365069A (en) | 1986-09-08 | 1986-09-08 | Sputtering device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6365069A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04143274A (en) * | 1990-10-05 | 1992-05-18 | Shinku Kikai Kogyo Kk | Thin film forming device |
| FR2732362A1 (en) * | 1995-03-31 | 1996-10-04 | Balzers Hochvakuum | Planetary cathodic sputter deposition station for optical or opthalmic lenses |
| KR100295551B1 (en) * | 1998-11-14 | 2001-07-12 | 손명호 | Conductive metal coating method and aparatus thereof |
| JP2002194542A (en) * | 2000-12-27 | 2002-07-10 | Anelva Corp | Magnetron sputtering equipment |
| JP2009138277A (en) * | 2009-01-27 | 2009-06-25 | Canon Anelva Corp | Magnetron sputtering apparatus |
| WO2009081953A1 (en) * | 2007-12-26 | 2009-07-02 | Canon Anelva Corporation | Sputtering apparatus, sputter film forming method, and analyzer |
| JP2010248562A (en) * | 2009-04-15 | 2010-11-04 | Showa Shinku:Kk | Magnetron cathode |
-
1986
- 1986-09-08 JP JP20951686A patent/JPS6365069A/en active Pending
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04143274A (en) * | 1990-10-05 | 1992-05-18 | Shinku Kikai Kogyo Kk | Thin film forming device |
| FR2732362A1 (en) * | 1995-03-31 | 1996-10-04 | Balzers Hochvakuum | Planetary cathodic sputter deposition station for optical or opthalmic lenses |
| US5911861A (en) * | 1995-03-31 | 1999-06-15 | Balzers Aktiengesellschaft | Coating station |
| US6123814A (en) * | 1995-03-31 | 2000-09-26 | Balzers Aktiengesellschaft | Coating station |
| KR100295551B1 (en) * | 1998-11-14 | 2001-07-12 | 손명호 | Conductive metal coating method and aparatus thereof |
| JP4592949B2 (en) * | 2000-12-27 | 2010-12-08 | キヤノンアネルバ株式会社 | Magnetron sputtering equipment |
| JP2002194542A (en) * | 2000-12-27 | 2002-07-10 | Anelva Corp | Magnetron sputtering equipment |
| WO2009081953A1 (en) * | 2007-12-26 | 2009-07-02 | Canon Anelva Corporation | Sputtering apparatus, sputter film forming method, and analyzer |
| JP5259626B2 (en) * | 2007-12-26 | 2013-08-07 | キヤノンアネルバ株式会社 | Sputtering apparatus, sputtering film forming method |
| JP2013174020A (en) * | 2007-12-26 | 2013-09-05 | Canon Anelva Corp | Sputtering apparatus |
| US8877019B2 (en) | 2007-12-26 | 2014-11-04 | Canon Anelva Corporation | Sputtering apparatus, sputter deposition method, and analysis apparatus |
| JP2009138277A (en) * | 2009-01-27 | 2009-06-25 | Canon Anelva Corp | Magnetron sputtering apparatus |
| JP2010248562A (en) * | 2009-04-15 | 2010-11-04 | Showa Shinku:Kk | Magnetron cathode |
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