JPS6362129A - Manufacture of shadow mask body structure - Google Patents
Manufacture of shadow mask body structureInfo
- Publication number
- JPS6362129A JPS6362129A JP20590886A JP20590886A JPS6362129A JP S6362129 A JPS6362129 A JP S6362129A JP 20590886 A JP20590886 A JP 20590886A JP 20590886 A JP20590886 A JP 20590886A JP S6362129 A JPS6362129 A JP S6362129A
- Authority
- JP
- Japan
- Prior art keywords
- shadow mask
- transfer
- insulation layer
- insulating layer
- pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000010408 film Substances 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 239000010409 thin film Substances 0.000 claims abstract description 7
- 238000010894 electron beam technology Methods 0.000 claims abstract description 5
- 239000000853 adhesive Substances 0.000 claims description 13
- 230000001070 adhesive effect Effects 0.000 claims description 13
- 239000006082 mold release agent Substances 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 2
- 238000003825 pressing Methods 0.000 claims description 2
- 238000009413 insulation Methods 0.000 abstract description 8
- 239000011230 binding agent Substances 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 4
- 230000015556 catabolic process Effects 0.000 abstract description 3
- 239000003795 chemical substances by application Substances 0.000 abstract description 2
- 238000007606 doctor blade method Methods 0.000 abstract description 2
- 239000007788 liquid Substances 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 238000000576 coating method Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 229920001169 thermoplastic Polymers 0.000 description 2
- 239000004416 thermosoftening plastic Substances 0.000 description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- 239000000020 Nitrocellulose Substances 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000009503 electrostatic coating Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229920001220 nitrocellulos Polymers 0.000 description 1
- -1 polyimide Chemical compound 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 235000019353 potassium silicate Nutrition 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000007761 roller coating Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（発明の目的〕
（産業上の利用分野）
本発明はカラー受像管用シャドウマスク構体、特にフォ
ーカスマスク型シャドウマスク構体の製造法に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION (Objective of the Invention) (Industrial Field of Application) The present invention relates to a method for manufacturing a shadow mask structure for a color picture tube, particularly a focus mask type shadow mask structure.
（従来の技術）
従来のフォーカスマスク型シャドウマスク構体の一例が
、米国特許明細書筒４，４２７，９１８号には第２図に
示すようなシャドウマスク構体が提案されている。即ち
シャドウマスクの矩形穴の短辺部方向を長辺部方向に比
べ段差をつけ厚くしたシャドウマスク基板（３５）をま
ず形成そしてその上に絶縁層（３７）、更にその上に導
電層（３９）を形成した構造をもつことを特徴としたも
のである。(Prior Art) As an example of a conventional focus mask type shadow mask structure, a shadow mask structure as shown in FIG. 2 is proposed in US Pat. No. 4,427,918. That is, first, a shadow mask substrate (35) is formed in which the short side of the rectangular hole of the shadow mask is stepped and thickened compared to the long side. ).
そして導電＠（３９）の製造法としてローラーコート、
ドクターブレード、真空蒸着等の方法が提案されている
。And roller coating as a manufacturing method of conductive@(39).
Methods such as doctor blade and vacuum evaporation have been proposed.
（発明が解決しようとする問題点）
上記従来の方法は絶縁層（３７）、導電層（３９）の形
成方法に問題があり、容易に実用化するのは難しい。(Problems to be Solved by the Invention) The conventional method described above has a problem in the method of forming the insulating layer (37) and the conductive layer (39), and is difficult to put into practical use easily.
即ち、ローラーコート、ドクターブレード等ではエツジ
におけるはみだしが、タレ等がさけられずシャ２プなエ
ツジを形成するのは難しく、これが絶縁破壊につながり
、方法の実用化を阻害している。That is, with roller coats, doctor blades, etc., it is difficult to form sharp edges because protrusion and sag cannot be avoided at the edges, which leads to dielectric breakdown and impedes the practical application of the method.
そこで本発明は、従来の欠点を解消するためになされた
もので、導電層の形成を容易にする方法を提供すること
を目的とする。SUMMARY OF THE INVENTION The present invention has been made in order to eliminate the conventional drawbacks, and an object of the present invention is to provide a method that facilitates the formation of a conductive layer.
（問題点を解決するための手段）
本発明は規則的に穿設された複数の電子ビーム透過孔を
有するシャドウマスク基板の電子ビーム透過孔のまわり
に絶縁層を形成する工程と、ベースフィルム、離形剤、
導電薄膜、接着剤の順に積層された転写フィルムの接着
剤側を前記絶縁層上に接着させる工程と、
転写フィルムを絶縁層から除去することにより導電薄膜
を絶縁層上にのみ残す工程を有することを特徴とするシ
ャドウマスク構体の製造方法である。(Means for Solving the Problems) The present invention includes a step of forming an insulating layer around an electron beam transmission hole of a shadow mask substrate having a plurality of regularly drilled electron beam transmission holes, a base film, mold release agent,
A step of adhering the adhesive side of a transfer film in which a conductive thin film and an adhesive are laminated in this order onto the insulating layer, and a step of removing the transfer film from the insulating layer to leave the conductive thin film only on the insulating layer. A method of manufacturing a shadow mask structure is characterized in that:
また転写フィルムは絶縁層上に加圧し、又は加圧と加熱
を併用して接着させることを特徴とする。Further, the transfer film is characterized by being bonded onto the insulating layer by applying pressure or using a combination of pressure and heating.
また転写フィルムはベースフィルム、離形剤、導電粒子
と接着剤の混合物の順に積層されたものであることを特
徴とする。Further, the transfer film is characterized in that a base film, a mold release agent, a mixture of conductive particles and an adhesive are laminated in this order.
（作 用）
本発明においては、導電層をいわゆる転写法により絶縁
層上に形成するので、作業がきわめて容易になる。(Function) In the present invention, since the conductive layer is formed on the insulating layer by a so-called transfer method, the work is extremely easy.
第１図に本発明の方法により１ｑられたシャドウマスク
構体の概略図を示す。シャドウマスク基板■の片面全面
には絶縁層■を設け、その上に導電層■を設けである。FIG. 1 shows a schematic diagram of a shadow mask structure 1q formed by the method of the present invention. An insulating layer (2) is provided on the entire surface of one side of the shadow mask substrate (2), and a conductive layer (2) is provided thereon.
導電層■は全面又はシャドウマスク構体のブリッジ部（
Ａ）を除く全面である。The conductive layer ■ may be applied to the entire surface or the bridge portion of the shadow mask structure (
This is the entire surface except for A).
第３図に従い本発明の製造法の特徴を説明する。The features of the manufacturing method of the present invention will be explained with reference to FIG.
■ シャドウマスク基板ωの断面図である。■ It is a cross-sectional view of the shadow mask substrate ω.
υ 上記片面全面にわたり絶縁層■を形成する。υ An insulating layer ■ is formed over the entire surface of the above one side.
絶縁物質としては、フリットガラス、アルミナ、シリカ
、ベンガラ等の無機物質、ポリイミド等の耐熱性樹脂等
を用いることができる。As the insulating material, inorganic materials such as frit glass, alumina, silica, and red iron, heat-resistant resins such as polyimide, etc. can be used.
必要に応じてバインダー、水ガラス等無機接着剤を用い
る。If necessary, use a binder, water glass, or other inorganic adhesive.
塗布法は片面全面に塗布するのであるから、静電塗装法
、スプレー法、ローラー法、フィルム転写法、シルクス
クリーン法等種々の方法を用いることができる。しかし
、成形後のマスクの場合には、スプレー法、フィルム転
写法等が好ましい。Since the coating method involves coating the entire surface on one side, various methods such as electrostatic coating, spraying, roller method, film transfer method, and silk screen method can be used. However, in the case of a mask after molding, a spray method, a film transfer method, etc. are preferred.
孔づまり、穴のエツジ部へのキレ悪化防止等の点よりス
プレー法が好ましい。The spray method is preferable from the viewpoint of preventing hole clogging and sharpening of the edges of the holes.
塗布後各々にあった硬化条件にて硬化をはかり絶縁層■
を完成する。After coating, cure the insulating layer using the curing conditions that suit each individual.
complete.
あまり絶縁性を上げすぎると耐電圧向上には好ましいが
、側面、ブリッジ部等の導電層未塗布域においてチャー
ジｕｐがおき好ましくない場合がある。If the insulating properties are increased too much, this is preferable for improving the withstand voltage, but it may be undesirable because charges may increase in areas where the conductive layer is not applied, such as side surfaces and bridge portions.
このような場合、Ｓ電物質例えば黒鉛、金属粉等を少量
、混合してコントロールしてもよいし、又、二層構造に
して一層目の下地となる部分にはできるだけ高抵抗物質
とし二層目をチャージｕｐが生じない程度の抵抗物質と
することも可能である。厚さは１〜１０００μ好ましく
は２０〜５００μである。博すざると耐圧不足であり、
厚すぎるとコストｕｐ等の問題がある。In such a case, it may be possible to control this by mixing a small amount of S-electrical material, such as graphite or metal powder, or by creating a two-layer structure and using a high-resistance material as much as possible for the base of the first layer. It is also possible to use a resistive material that does not cause charge up. The thickness is 1-1000μ, preferably 20-500μ. If you do not use it, it will not be able to withstand pressure,
If it is too thick, there will be problems such as increased costs.
（Ｃ）〜ゆ 接着剤（イ）、金属薄膜■、離形剤付きベ
ータフィルム■からなる転写フィルムを絶縁層■上に加
圧又は加圧子加熱の効果により転写を行う。(C) - Yu A transfer film consisting of the adhesive (A), the metal thin film (2), and the beta film (2) with a mold release agent is transferred onto the insulating layer (2) by pressure or the effect of heating with a presser.
圧力のかかりにくい凹部には付着しにくいため凸部に選
択的に転写される。Since it is difficult to adhere to concave portions where pressure is not easily applied, it is selectively transferred to convex portions.
υの工程に於いて形成された絶縁層■のブリッジ部（Ａ
）における厚さは、他の部分に比べ少しうすくなってし
まう（図４）。これは図１におけるＣ及びＢの寸法がＢ
＞Ｃとなっているため絶縁物質の付着量に差が生じてし
まうためと思われる。The bridge part (A) of the insulating layer ■ formed in the step υ
) is slightly thinner than other parts (Figure 4). This means that the dimensions of C and B in Figure 1 are B
>C, which may cause a difference in the amount of insulating material deposited.
この少しの厚さの差を利用して適切な加圧とを組み合わ
せればブリッジ部（Ａ）への転写をさけることができる
。より確実には基板でのブリッジ部を少しへこませてつ
くっておくことがペターでは必るが、より強い加圧を行
えばブリッジ部（Ａ）にも転写できる。By utilizing this slight difference in thickness and combining it with appropriate pressure, transfer to the bridge portion (A) can be avoided. To be more reliable, it is necessary to create a slight depression in the bridge part on the substrate, but if stronger pressure is applied, it can also be transferred to the bridge part (A).
本転写法は一定の加圧又は加圧＋加熱がかかったところ
以外には付着しないため、従来のローラー法やドクター
ブレード法等の液状態で塗布する方式に比べ、にじみ出
しがないため極めてシャープにエツジがきれ、これが絶
縁破壊防止のメリットを生む。This transfer method does not adhere to areas other than where a certain amount of pressure or pressure + heat is applied, so compared to conventional roller methods or doctor blade methods that apply in a liquid state, there is no oozing and the edges are extremely sharp. This has the advantage of preventing dielectric breakdown.
より厚い導電層を必要とする場合、金属薄膜の代りに導
電物質の粒子と無機接着剤との混合物としても良いし、
有機接着剤とも混合した形にすることも可能である。If a thicker conductive layer is required, a mixture of conductive material particles and an inorganic adhesive may be used instead of the metal thin film.
It is also possible to mix it with an organic adhesive.
（ｅ） 接着剤をベータアウトして完成する。このベ
ークアウトはもちろん従来カラー管製造工程であるスタ
ビ炉、封看炉等にて兼用すれば良い。(e) Beta out the adhesive and complete. Of course, this bakeout may be performed in a stabilizer furnace, a sealing furnace, etc., which are conventionally used in the collar tube manufacturing process.
第４図は第３図と同様であるが、これはブリッジ部を含
んだ場合である。FIG. 4 is similar to FIG. 3, but includes a bridge section.
以下に本発明の実施例を示す。Examples of the present invention are shown below.
（実施例１）
フリットガラス２重量部、酢酸ブチル１重量部、ニトロ
セルロース０．０１１重部からなる懸濁液を調合、成形
後のシャドウマスクの電子銃側からスプレーし、次いで
、約４５０℃の炉の中に入れ焼結し絶縁層を形成した。(Example 1) A suspension consisting of 2 parts by weight of frit glass, 1 part by weight of butyl acetate, and 0.011 parts by weight of nitrocellulose was prepared, sprayed from the electron gun side of the shadow mask after molding, and then heated at about 450°C. The material was placed in a furnace and sintered to form an insulating layer.
厚さは約１００μであったがブリッジ部は約９０μと少
し薄かった。The thickness was approximately 100μ, but the bridge portion was slightly thinner at approximately 90μ.
ベースフィルムの上に、離形剤、アルミはく、熱可塑性
接着剤の順で積層した転写フィルムをつくり、上記絶縁
層に転写を行なった。転写はマスク球面と同じ曲率をも
つ耐熱ゴム型を用いて、約１８０℃、約０．３Ｋｒｊ／
ｃｍの加熱加圧プレスにて転写を行なうとブリッジ部を
除いてストライプ状に従来法に比べはるかにエツジがシ
ャープなアルミ導電層が形成された。蛍光面形成後、マ
スク両サイドの有効面外に導通用のワイヤをつけ、ファ
ンネル部に設けた二ヶのアノードボタンと接続し製品化
した。A transfer film was prepared by laminating a mold release agent, aluminum foil, and thermoplastic adhesive in this order on a base film, and the transfer film was transferred to the above-mentioned insulating layer. The transfer was performed using a heat-resistant rubber mold with the same curvature as the mask spherical surface at approximately 180°C and approximately 0.3Krj/
When the transfer was carried out using a 1.5 cm heating and pressure press, an aluminum conductive layer was formed in a stripe shape with far sharper edges than in the conventional method, except for the bridge portions. After forming the phosphor screen, conductive wires were attached to the outside of the effective surface on both sides of the mask and connected to the two anode buttons provided in the funnel section to commercialize the product.
片面に２５Ｋｖ、もう一方に２８Ｋ ｖと３ＫＶ（７）
電位を与えたが絶縁不良の発生は認められなかった。25Kv on one side, 28Kv and 3KV on the other side (7)
Although a potential was applied, no insulation failure was observed.
ビームの収束率は１，４倍になり、輝度４０％向上を得
た。The beam convergence rate was increased by 1.4 times, and the brightness was improved by 40%.
（実施例２）
実施例１に於いて軽写圧力を２０ＫｔＪ／ｃｍに増して
軽写しだところブリッジ部分にも導電層が形成された。(Example 2) When light copying was carried out in Example 1 by increasing the copying pressure to 20 KtJ/cm, a conductive layer was also formed in the bridge portion.
又他の部分もより広い面積にわたって導電層が形成され
たがエツジはシャープであった。２ＫＶの電位差まで耐
えられた。ビーム収束率は１．３倍であり輝度３０％向
上を得た。In other parts, a conductive layer was formed over a wider area, but the edges were sharp. It can withstand up to a potential difference of 2KV. The beam convergence rate was 1.3 times higher, and the brightness was improved by 30%.
（実施例３）
シャドウマスク基板をブリッジ部にて約３０μ低くした
構造にして実施例２と同一条件で転写したところブリッ
ジ部分には転写されず実施例１に近い構造及び特性が得
られた。ただし、導電層と絶縁層との接着力はより強固
であった。(Example 3) When a shadow mask substrate had a structure in which the bridge portion was lowered by about 30 μm and was transferred under the same conditions as Example 2, no transfer was made to the bridge portion, and a structure and characteristics similar to those of Example 1 were obtained. However, the adhesive force between the conductive layer and the insulating layer was stronger.
（実施例４）
シャドウマスク基板を成形前のフラットの状態で実施例
３と同様、導電層、絶縁層とを形成、しかる後、プレス
成形を行なった。導電層、絶縁層とも微少なひび割れが
できたが性能には影響なかった。(Example 4) A conductive layer and an insulating layer were formed on a shadow mask substrate in a flat state before molding in the same manner as in Example 3, and then press molding was performed. There were slight cracks in both the conductive layer and the insulating layer, but this did not affect performance.
（実施例５）
黒鉛５重量部、フリットガラス１重量部、熱可塑性接着
剤５重量部からなる混合層をベースフィルム上に塗布し
た転写フィルムを用いて、実施例１と同様に転写した。(Example 5) Transfer was performed in the same manner as in Example 1 using a transfer film in which a mixed layer consisting of 5 parts by weight of graphite, 1 part by weight of frit glass, and 5 parts by weight of thermoplastic adhesive was applied onto a base film.
極めてシャープなエツジの導電層が得られ、同様特性を
達成できた。A conductive layer with extremely sharp edges was obtained, and similar properties were achieved.
以上のように本発明によればエツジ部がシャープなフォ
ーカスマスク用導電層が安定して且つ安価に製造でき、
充分な耐絶縁特性が得られる結果、充分なフォーカス効
果が得られ約４０％前後と大巾に輝度の高いカラー受像
管が得られる。As described above, according to the present invention, a conductive layer for a focus mask with sharp edges can be produced stably and at low cost.
As a result of obtaining sufficient insulation resistance, a color picture tube with a sufficient focusing effect and a significantly high brightness of about 40% can be obtained.
また以上はスリットタイプのシャドウマスクについて述
べてきたが丸孔タイプ、そしてグリルタイプのカラー管
についても同様に適用できる。Further, although the above description has been made regarding a slit type shadow mask, the same applies to round hole type and grill type color tubes.
第１図は本発明により得られたフォーカスマスク型シャ
ドウマスク構体の斜視図、
第２図は従来のフォーカスマスク型シャドウマスク構体
の斜視図、
第３図および第４図は本発明のシャドウマスク構体の製
造工程を説明する図でおる。
１・・・シャドウマスク基板 ２・・・絶縁層３・・・
導電層
代理人 弁理士 則 近 憲 佑
同 大胡典夫
第１図
第２図
第８図FIG. 1 is a perspective view of a focus mask type shadow mask structure obtained by the present invention, FIG. 2 is a perspective view of a conventional focus mask type shadow mask structure, and FIGS. 3 and 4 are shadow mask structures of the present invention. This is a diagram explaining the manufacturing process. 1...Shadow mask substrate 2...Insulating layer 3...
Conductive layer agent Patent attorney Nori Ken Chika Yudo Norio Ogo Figure 1 Figure 2 Figure 8
Claims (3)
するシャドウマスク基板の電子ビーム透過孔のまわりに
絶縁層を形成する工程と、 ベースフィルム、離形剤、導電薄膜、接着剤の順に積層
された転写フィルムの接着剤側を前記絶縁層上に接着さ
せる工程と、 転写フィルムを絶縁層から除去することにより導電薄膜
を絶縁層上にのみ残す工程を有することを特徴とするシ
ャドウマスク構体の製造方法。(1) Forming an insulating layer around the electron beam transmission holes of a shadow mask substrate having a plurality of regularly drilled electron beam transmission holes; A shadow mask characterized by comprising the steps of: adhering the adhesive side of the transfer films laminated in sequence onto the insulating layer; and removing the transfer film from the insulating layer to leave the conductive thin film only on the insulating layer. Method of manufacturing the structure.
熱を併用して接着させることを特徴とする特許請求の範
囲第１項記載のシャドウマスク構体の製造方法。(2) The method for manufacturing a shadow mask structure according to claim 1, wherein the transfer film is bonded onto the insulating layer by applying pressure or using a combination of pressure and heating.
子と接着剤の混合物の順に積層されたものであることを
特徴とする特許請求の範囲第１項記載のシャドウマスク
構体の製造方法。(3) The method for manufacturing a shadow mask structure according to claim 1, characterized in that the transfer film is formed by laminating a base film, a mold release agent, a mixture of conductive particles and an adhesive in this order.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20590886A JPS6362129A (en) | 1986-09-03 | 1986-09-03 | Manufacture of shadow mask body structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20590886A JPS6362129A (en) | 1986-09-03 | 1986-09-03 | Manufacture of shadow mask body structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6362129A true JPS6362129A (en) | 1988-03-18 |
Family
ID=16514744
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20590886A Pending JPS6362129A (en) | 1986-09-03 | 1986-09-03 | Manufacture of shadow mask body structure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6362129A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6919673B2 (en) | 2001-01-30 | 2005-07-19 | Kabushiki Kaisha Toshiba | Color cathode ray tube and method of manufacturing the same |
-
1986
- 1986-09-03 JP JP20590886A patent/JPS6362129A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6919673B2 (en) | 2001-01-30 | 2005-07-19 | Kabushiki Kaisha Toshiba | Color cathode ray tube and method of manufacturing the same |
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