JPS6351918A - Gas purifier for semi-conductor manufacturing device - Google Patents
Gas purifier for semi-conductor manufacturing deviceInfo
- Publication number
- JPS6351918A JPS6351918A JP61196621A JP19662186A JPS6351918A JP S6351918 A JPS6351918 A JP S6351918A JP 61196621 A JP61196621 A JP 61196621A JP 19662186 A JP19662186 A JP 19662186A JP S6351918 A JPS6351918 A JP S6351918A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- filter
- adsorbent
- housing
- gas purifier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 239000003463 adsorbent Substances 0.000 claims abstract description 46
- 238000006243 chemical reaction Methods 0.000 claims abstract description 22
- 239000002184 metal Substances 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 239000000919 ceramic Substances 0.000 claims abstract description 7
- 239000012535 impurity Substances 0.000 claims description 3
- 239000000428 dust Substances 0.000 abstract description 8
- 239000010419 fine particle Substances 0.000 abstract description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 4
- 229910021536 Zeolite Inorganic materials 0.000 abstract description 3
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 abstract description 3
- 239000010457 zeolite Substances 0.000 abstract description 3
- 229910002092 carbon dioxide Inorganic materials 0.000 abstract description 2
- 239000001569 carbon dioxide Substances 0.000 abstract description 2
- 239000002245 particle Substances 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 93
- 239000010408 film Substances 0.000 description 9
- 238000010926 purge Methods 0.000 description 8
- 238000000746 purification Methods 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 230000003749 cleanliness Effects 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 230000008929 regeneration Effects 0.000 description 3
- 238000011069 regeneration method Methods 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 238000011144 upstream manufacturing Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Filtering Of Dispersed Particles In Gases (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Separation Of Gases By Adsorption (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体の製造プロセスにおいて超高純度ガス
を反応室に送るための半導体製造装置用ガス精製器に関
する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a gas purifier for semiconductor manufacturing equipment for sending ultra-high purity gas to a reaction chamber in a semiconductor manufacturing process.
一般に半導体製造装置に用いられる高純度ガスラインで
は、ガス精製Ｖ装置を通過した高純度ガスを、流量や圧
力を制御するためのガスコントロールシステムを通して
から、反応室に流し込むようにしている。周知のように
不純ガスの存在は、反応室で生成される半導体ディバイ
スに欠陥を生じる原因となるため、上記ガス精製装置ば
かりでなくガスコントロールシステムについても相当な
高純度化が図られている。In a high-purity gas line generally used in semiconductor manufacturing equipment, the high-purity gas that has passed through the gas purification V device passes through a gas control system to control the flow rate and pressure before flowing into the reaction chamber. As is well known, the presence of impure gases causes defects in semiconductor devices produced in the reaction chamber, so not only the gas purification equipment but also the gas control system has been significantly purified.
しかしながら、ガスｌ製ｖ装置の下流側にガスコントロ
ールシステムが配置されている以上、このガスコントロ
ールシステム内でガスが汚染されることを完全に無くす
ことは不可能であった。それにもかかわらず近時は半導
体ディバイス等の超精密化に伴って、反応室に送り込む
ガスの超高純度化を望む声がますます強まる傾向にあり
、従来の高純度ガスラインではこうした要求に対応しき
れていないのが現状である。ガスの高純度化には、通常
吸着剤を用いるが、吸着剤はガス供給系において大量の
塵埃を発生するという決定的な欠点を有している。However, since the gas control system is disposed downstream of the gas equipment, it has been impossible to completely eliminate gas contamination within the gas control system. Despite this, in recent years, with the ultra-precision of semiconductor devices, there has been an increasing demand for ultra-high purity gas sent into the reaction chamber, and conventional high-purity gas lines cannot meet these demands. The current situation is that it is not enough. Adsorbents are usually used to purify gases, but adsorbents have the decisive drawback of generating a large amount of dust in the gas supply system.
本発明は、半導体製造プロセスにおける反応室のガス取
入れ口側に接続されるガス精製器であって、ガスの流入
口および流出口を備えたハウジングと、このハウジング
内に収容された不純ガス除去用の吸着剤と、上記ハウジ
ング内おいて上記流入口と上記吸着剤との間に設けられ
た第１フィルタと、上記ハウジング内において上記吸着
剤と上記流出口との間に設けられた微粒子捕集用の高密
度第２フィルタとを具備したことを特徴とする。The present invention relates to a gas purifier connected to the gas intake side of a reaction chamber in a semiconductor manufacturing process, which includes a housing having a gas inlet and an outlet, and a gas purifier for removing impurity gas housed within the housing. an adsorbent, a first filter provided within the housing between the inlet and the adsorbent, and a particulate collector provided between the adsorbent and the outlet within the housing. It is characterized by comprising a high-density second filter.
第２フィルタの目のあらさは、吸着剤等から生じる微小
粒子を充分捕集できる大きさとする。上記吸着剤として
は例えばゼオライト等が使用されるが、これ以外の吸着
剤を用いることも勿論有り得る。The roughness of the second filter is set to be large enough to sufficiently collect microparticles generated from the adsorbent and the like. For example, zeolite is used as the adsorbent, but it is of course possible to use other adsorbents.
（作用）
上記ガス精製器は、ガスコントロールシステムの下流側
で反応室の直前に設けるのが効果的である。このガス精
製器は、ハウジング内に吸着剤とフィルタとを内蔵しコ
ンパクトに構成できるものであるから、既設の高純度ガ
スラインにおける反応室の直前に容易に追加できる。(Function) It is effective to provide the above gas purifier immediately before the reaction chamber on the downstream side of the gas control system. Since this gas purifier has an adsorbent and a filter built into the housing and can be configured compactly, it can be easily added to an existing high-purity gas line immediately before the reaction chamber.
ガスコントロールシステムの上流側には別途に周知のガ
ス精製装置が設置され、所望の高純度ガスが作られる。A well-known gas purification device is separately installed upstream of the gas control system to produce desired high-purity gas.
ガスコントロールシステムを通過して所定の流量と圧力
に制御された高純度ガスは、本発明のガス精製器を通っ
て反応室に送られるため、ガスの純度を更に上げること
ができるばかりでなく、仮にガスコントロールシステム
内での汚染があっても、この精製器を通過することで超
高純度のガスを反応室に供給することができる。The high-purity gas that passes through the gas control system and is controlled to a predetermined flow rate and pressure is sent to the reaction chamber through the gas purifier of the present invention, which not only makes it possible to further increase the purity of the gas, but also Even if there is contamination within the gas control system, ultra-high purity gas can be supplied to the reaction chamber by passing through this purifier.
吸着剤の再生を行なうには、上記ガス精製器を高温に熱
した状態で、パージガスを上記流出口側から流入口側に
逆流させることによって行なえる。The adsorbent can be regenerated by heating the gas purifier to a high temperature and causing the purge gas to flow back from the outlet side to the inlet side.
パージガスが流れる吸着剤の下流側すなわちハウジング
の流入口側には第１フィルタが配置されているから、パ
ージガスに伴う吸着剤からの微小か埃が流入口側に流れ
出て配管系等を汚染することを防止できる。Since the first filter is placed on the downstream side of the adsorbent through which the purge gas flows, that is, on the inlet side of the housing, minute dust from the adsorbent accompanying the purge gas will flow out to the inlet side and contaminate the piping system, etc. can be prevented.
第１図に示されたガス精製器１は、略円筒形の金属製ハ
ウジング２を備えている。このハウジング２は、図示上
端側が開口する有底のハウジング本体２ａと、このハウ
ジング本体２ａの開口を塞ぐハウジング蓋２ｂとを備え
て構成されている。The gas purifier 1 shown in FIG. 1 includes a substantially cylindrical metal housing 2. The gas purifier 1 shown in FIG. The housing 2 includes a bottomed housing body 2a that is open at the upper end in the figure, and a housing lid 2b that closes the opening of the housing body 2a.
上記ハウジング蓋２ｂは、ねじ部３ａを備えたねじ込み
式のキャップ３によってハウジング本体２ａに固定され
ている。ハウジング本体２ａとハウジング１２ｂとの間
には、メタルガスケット４が設けられていて両者間の気
密を維持している。The housing lid 2b is fixed to the housing body 2a by a screw-in cap 3 having a threaded portion 3a. A metal gasket 4 is provided between the housing body 2a and the housing 12b to maintain airtightness between them.
そしてハウジング蓋２ｂの中央部にガスの流入口６が開
設されている。またハウジング本体２ａの底壁部分の中
央にガスの流出ロアが開設されている。半導体の製造プ
ロセスに使われるガスは上記流入口６からハウジング２
内に導入されたのち流出ロアから流出するのであり、ハ
ウジング２の内部は上記ガスの滞留が生じないような形
状に形成されている。A gas inlet 6 is provided in the center of the housing lid 2b. Further, a gas outflow lower is provided in the center of the bottom wall portion of the housing body 2a. Gas used in the semiconductor manufacturing process flows from the inlet 6 to the housing 2.
After being introduced into the interior of the housing 2, the gas flows out from the outflow lower part, and the interior of the housing 2 is formed in a shape that prevents the above-mentioned gas from stagnation.
また、ガスが接触する金属表面は、その表面積が極力小
さくなるように加工変質層を伴わない鏡面仕上げをして
あり、こうすることにより金属表面への不純ガスの取込
みと金属表面からのガスの放出を少なくしている。なお
流入口６の外周部と流出ロアの外周部には、それぞれ配
管系に接続するためのねじ部８ａ、８ｂが設けられてい
る。In addition, the metal surface that comes into contact with the gas has a mirror finish with no process-altered layer so that the surface area is as small as possible. Reduces emissions. Incidentally, threaded portions 8a and 8b for connection to a piping system are provided on the outer periphery of the inlet 6 and the outer periphery of the outflow lower, respectively.
そしてハウジング２内に不純ガス吸収用の吸着剤９〈一
部のみ図示）が収容されている。この吸着剤９は一例と
してゼオライトであるが、ゼオライトは水分子あるいは
炭酸ガスを吸着するものである。上記吸着剤９にニッケ
ル（Ｎ ｉ ）の微粉末を混合したものは、酸素ガスの
除去能力を有している。この場合、吸着剤に混合した金
ａ（例えばＮｉ）と同じ材質をハウジング２に用いると
一層有効である。The housing 2 houses an adsorbent 9 (only a portion of which is shown) for absorbing impure gas. This adsorbent 9 is, for example, zeolite, which adsorbs water molecules or carbon dioxide gas. The adsorbent 9 mixed with fine powder of nickel (N i ) has the ability to remove oxygen gas. In this case, it is more effective to use the same material as the gold a (for example, Ni) mixed in the adsorbent for the housing 2.
また、上記ハウジング２内において上記流入口６と吸着
剤９との間に板状の第１フィルタ１１が設けられている
。この第１フィルタ１１は、吸着剤９に生じた微小膿埃
が流入口６側に逆流することを防ぐためには後述する第
２フィルタ１２と同様に目の細かいものが望ましいが、
いわゆる金属メツシュフィルタのように比較約０の粗い
フィルタを用いることも可能である。Furthermore, a plate-shaped first filter 11 is provided within the housing 2 between the inlet 6 and the adsorbent 9. The first filter 11 is desirably fine-mesh like the second filter 12 described later, in order to prevent the minute dust generated on the adsorbent 9 from flowing back to the inlet 6 side.
It is also possible to use a coarse filter with a comparison of about 0, such as a so-called metal mesh filter.
一方、ハウジング２内において吸着剤９と流出ロアとの
間に位置して、第２フィルタ１２が設けられている。こ
の第２フィルタ１２は、ガスの通過する濾過面積を大き
くとれるように先端が閉じた略円筒形に形成されている
。この第２フィルタ１２はハウジング２と同心状に配さ
れ、第２フィルタ１２の外周側に吸着剤９が充填されて
いる。On the other hand, a second filter 12 is provided within the housing 2 between the adsorbent 9 and the outflow lower. The second filter 12 is formed into a substantially cylindrical shape with a closed tip so as to have a large filtration area through which gas passes. This second filter 12 is arranged concentrically with the housing 2, and the outer circumferential side of the second filter 12 is filled with adsorbent 9.
第２フィルタ１２の内部は流出ロアに通過している。The inside of the second filter 12 passes through the outflow lower.
上記第２フィルタ１２は、吸着剤９から発生した微小塵
埃や水粒子、異物等の微粒子を捕集する機能をもち、目
のあらさは一例として０．１μと充分小さなものを使用
する。第２フィルタ１２の素材としては、機械的な強度
が高くかつ吸着剤９の再生時の高温（例えば約３５０℃
）にも耐えることが必要であるから、例えばステンレス
鋼等の焼結金属やアルミナ（Ａｆｆ２０３ ）セラミッ
ク類のものが採用できるが、特に耐腐食性を有する導電
性セラミック（Ｓ ｉ Ｃのようなもの）が望ましい。The second filter 12 has a function of collecting fine particles such as fine dust, water particles, and foreign substances generated from the adsorbent 9, and has a sufficiently small mesh roughness of, for example, 0.1 μ. The second filter 12 is made of a material that has high mechanical strength and high temperature during regeneration of the adsorbent 9 (for example, about 350°C).
), for example, sintered metals such as stainless steel and alumina (Aff203) ceramics can be used, but especially conductive ceramics (such as SiC) with corrosion resistance can be used. ) is desirable.
すなわち、フィルタ１２が電気絶縁性であると、ガスが
フィルタ１２の小孔部分を高速で流れる際に数１０万ボ
ルト以上の静電気が帯電されることがある。この静電気
が放電を起こすと、周囲の物質をガス化させて不純ガス
の発生原因となるばかりか、この時に酸素ガスが流れて
いると強い酸化反応を引起こして、燃焼することが考え
られる。このためフィルタ１２をＳｉＣ等のような導電
材料で形成して静電気を逃がすようにすれば、上述の問
題は解決できる。That is, if the filter 12 is electrically insulating, when gas flows through the small pores of the filter 12 at high speed, it may be charged with static electricity of several hundred thousand volts or more. When this static electricity causes a discharge, it not only gasifies surrounding substances and causes the generation of impure gas, but also causes a strong oxidation reaction if oxygen gas is flowing at this time, which may lead to combustion. Therefore, the above-mentioned problem can be solved by forming the filter 12 from a conductive material such as SiC to allow static electricity to escape.
上記構成のガス精製器１は、その−例を第２図に示した
ように、ガスの流出ロアに切換え弁機構１４を介して反
応室１５のガス取入れ口側が接続される。また、ガスの
流入口６側は、切換え弁機構１７を介してガスコントロ
ールシステム１８に接続される。ガスコントロールシス
テム１８の上流側には、周知のガス精製装置１１９が設
けられる。As an example of the gas purifier 1 having the above configuration is shown in FIG. 2, the gas intake side of the reaction chamber 15 is connected to the gas outflow lower via the switching valve mechanism 14. Further, the gas inlet 6 side is connected to a gas control system 18 via a switching valve mechanism 17 . A well-known gas purification device 119 is provided upstream of the gas control system 18 .
上記切換え弁機構１４．１７はそれぞれハウジング２と
別体に設けてもよいが、装置のコンパクト化を図る上で
ハウジング２と一体化させるのがよい。Although the switching valve mechanisms 14 and 17 may be provided separately from the housing 2, they are preferably integrated with the housing 2 in order to make the device more compact.
上記一実施例装置において、ガス精製装置１９で精製さ
れた高純度ガスは、ガスコントロールシステム１８に送
られることにより、所定の流思と圧力に制御されてガス
精製器１に送り込まれる。In the device of the above embodiment, the high purity gas purified by the gas purification device 19 is sent to the gas control system 18, where it is controlled to a predetermined flow rate and pressure and sent to the gas purifier 1.
この場合、第２図に示されるように一方の弁１４ａ、１
７ａを開弁させ、他方の弁１４ｂ。In this case, as shown in FIG.
7a and the other valve 14b.
１７ｂは閉弁しておく。上記精製器１においては、高純
度ガスに含まれる僅かな不純ガスが吸着剤９に吸収され
るとともに、例えば吸着剤９から発生する微小塵埃や異
物等の微粒子は、第２フィルタ１２によって確実に捕集
される。こうして超高純度化されたガスは反応室１５に
送られる。従って、ガスの純度を更に上げることができ
るばかりでなく、仮にガスコントロールシステム１８内
で汚染が生じたとしても、最も純度の＾い超高純度ガス
を反応ｖ１５に供給することができる。このため反応室
１５内における成膜あるいはエツチングの品質が向上す
るとともに、再現性、信頼性が確保され歩留りが大幅に
向上する。なお、吸着剤９の性能を上げるためにハウジ
ング２に電子式冷凍手段あるいは液化ガスによる冷却手
段を付加するのも効果的である。また、ハニカム構造の
フィルタを使用してもよい。Valve 17b is kept closed. In the purifier 1, a small amount of impurity gas contained in the high-purity gas is absorbed by the adsorbent 9, and the second filter 12 reliably removes fine particles such as minute dust and foreign matter generated from the adsorbent 9. be captured. The ultra-purified gas is sent to the reaction chamber 15. Therefore, not only can the purity of the gas be further increased, but even if contamination occurs within the gas control system 18, the most pure ultra-high purity gas can be supplied to the reaction v15. Therefore, the quality of film formation or etching in the reaction chamber 15 is improved, reproducibility and reliability are ensured, and the yield is significantly improved. In addition, in order to improve the performance of the adsorbent 9, it is also effective to add an electronic refrigeration means or a cooling means using liquefied gas to the housing 2. Alternatively, a filter with a honeycomb structure may be used.
吸着剤９の再生を行なうには、第３図に例示されるよう
に一方の弁１４ａ、１７ａを閉弁し、他方の弁１４ｂ、
１７ｂを開弁させた状態で、ガスｆＪ製器１を高温（例
えば３５０℃）に熱するとともにパージガスを流出ロア
から流入口６に逆流させる。この時、パージガスが流れ
る吸着剤９の下流側すなわち流入口６側には第１フィル
タ１１が配置されているから、パージガスの流動に伴な
って吸着剤９から微小塵埃が流入口６側に流れ出ること
が防止される。吸着剤９の加熱を行なうには、ハウジン
グ２の外部からヒータあるいは炉によって加熱すればよ
いが、場合によってはハウジング２に再生加熱用のヒー
タを内蔵させてもよい。パージガスとしては例えば窒素
やアルゴン、ヘリウム等の不活性ガスが使用されるが、
吸着剤９に酸素除去用Ｎｉ微粉末を混合させている場合
には、水素ガスを流すことで活性化を行なう。To regenerate the adsorbent 9, as illustrated in FIG. 3, one valve 14a, 17a is closed, and the other valve 14b,
With the valve 17b opened, the gas fJ making device 1 is heated to a high temperature (for example, 350° C.), and the purge gas is caused to flow back from the outflow lower to the inflow port 6. At this time, since the first filter 11 is disposed downstream of the adsorbent 9 through which the purge gas flows, that is, on the inlet 6 side, fine dust flows from the adsorbent 9 toward the inlet 6 as the purge gas flows. This will be prevented. In order to heat the adsorbent 9, it may be heated from outside the housing 2 using a heater or a furnace, but depending on the case, a heater for regenerative heating may be built into the housing 2. For example, an inert gas such as nitrogen, argon, or helium is used as the purge gas.
When the adsorbent 9 is mixed with Ni fine powder for oxygen removal, activation is performed by flowing hydrogen gas.
なお第４図に示されるように、複数のガス精製器１．１
′を並列に接続することによって、ガスの精製と吸着剤
９の再生を同時に行なえるようにすれば、システムの稼
働効率が向上する。すなわち、一方のガスｙｌＩｌｌ器
１に接続された弁１４ａ。In addition, as shown in FIG. 4, a plurality of gas purifiers 1.1
If the gas purification and the regeneration of the adsorbent 9 can be performed simultaneously by connecting them in parallel, the operating efficiency of the system will be improved. That is, the valve 14a connected to one gas vessel 1.
１７ａを開弁させるとともに弁１４ｂ、１７ｂを閉じる
ことにより、この精製器１ではガスの［４を行なう。ま
た、他方の精製器１′では、弁１４ａ’ 、１７ａ’を
開弁させるとともに弁１４ｂ’ 、１７ｂ’ を閉じて
パージガスを流出ロアから流入口６側に流すことにより
、このＩ製器１′では吸着剤９の再生を行なうことがで
きる。By opening the valve 17a and closing the valves 14b and 17b, the purifier 1 performs [4] of the gas. In addition, in the other purifier 1', the valves 14a' and 17a' are opened and the valves 14b' and 17b' are closed to flow the purge gas from the outflow lower to the inlet 6 side. Then, the adsorbent 9 can be regenerated.
第５図に示されるガス精製器１は本発明の他の実施例を
示すものである。この実施例では、円筒形の第１フィル
タ１１の内側に、径の小さな円筒形の第２フィルタ１２
を同心状に配置している。The gas purifier 1 shown in FIG. 5 shows another embodiment of the present invention. In this embodiment, a cylindrical second filter 12 with a small diameter is placed inside a cylindrical first filter 11.
are arranged concentrically.
そしてフィルタ１１．１２間に吸着剤９（一部のみ図示
）を充填する。フィルタ１１．１２は例えばＡｎ２０３
やＳｉＣなどのセラミック製であって、目のあらさは吸
着剤９で発塵した微粒子を捕集できる大きさとする。吸
着剤９は前述した実施例と同様のものであってよい。ハ
ウジング蓋２ｂはハウジング本体２ａに溶接される。Then, an adsorbent 9 (only a portion of which is shown) is filled between the filters 11 and 12. Filters 11.12 are for example An203
It is made of ceramic such as or SiC, and its roughness is large enough to collect fine particles generated by the adsorbent 9. The adsorbent 9 may be similar to the embodiments described above. The housing lid 2b is welded to the housing body 2a.
上記フィルタ１１．１２は、ハウジング本体２ａの底型
部分とフィルタホルダ２１との間に挟持されており、フ
ィルタホルダ２１は圧縮コイルばね２２によって押え付
けられている。このような構造にすれば、吸着剤９を再
生する際の高温下において、金属とセラミックおよび吸
着剤９の熱膨張差に起因する軸方向の寸法差を吸収する
ことができる。The filters 11, 12 are held between the bottom part of the housing body 2a and the filter holder 21, and the filter holder 21 is held down by a compression coil spring 22. With such a structure, it is possible to absorb the dimensional difference in the axial direction caused by the difference in thermal expansion between the metal, the ceramic, and the adsorbent 9 at high temperatures when the adsorbent 9 is regenerated.
また本実施例においては、フィルタ１１．１２の両端部
のシール性を良好にするために、フィルタ１１．１２の
一端部とハウジング本体２ａおよびフィルタ４１．１２
の他端部とフィルタホルダ２１とが互いに嵌合する構造
にするとともに、双方の嵌合箇所を互いに鏡面仕上げと
する。また、この部位にニッケル箔等を介在させること
によってシール性を確保するようにしてもよい。なお、
吸着剤９をハウジング２内に充填する際の発塵を防止す
るために、予め吸着剤９の外周面および内周面そして両
端面等を焼結等の手段によって固めておくことも考えら
れる。Further, in this embodiment, in order to improve the sealing performance at both ends of the filter 11.12, one end of the filter 11.12, the housing main body 2a, and the filter 41.12 are connected to each other.
The other end portion and the filter holder 21 are structured to fit into each other, and the fitting portions of both sides are mirror-finished. Further, sealing performance may be ensured by interposing a nickel foil or the like in this region. In addition,
In order to prevent dust from being generated when the adsorbent 9 is filled into the housing 2, it is conceivable to harden the outer circumferential surface, inner circumferential surface, both end surfaces, etc. of the adsorbent 9 in advance by means such as sintering.
また、上記ガス精製器１は反応至１５の直前に設けるだ
けでなく、例えばクリーン度の落ちる配管が上流にある
場合に、この精製器１をクリーン度の落ちる配管の最後
に接続して高クリーン配管につなげば、下流側の清浄配
管を汚すことがなくなり、更に効果的なものとなる。In addition, the gas purifier 1 is not only installed just before the reaction 15, but also, for example, if there is a pipe with a lower level of cleanliness upstream, this purifier 1 can be connected to the end of the pipe with a lower level of cleanliness to achieve a higher level of cleanliness. If it is connected to piping, it will not pollute the downstream clean piping, making it even more effective.
本発明によるフィルタ内蔵型ガス精製器を、ＲＦバイア
ススパッタ装置に適用し、例えばＡ！２の成膜を行なっ
た場合の効果について説明する。The filter built-in gas purifier according to the present invention is applied to an RF bias sputtering apparatus, for example, A! The effect of forming the second film will be explained.
パターンが微細化されたＬＳＩにおいては、細く深いア
スペクト比の大きいスルーホールへの金属穴を埋める成
膜技術が要求されるため、スパッタ空間のＡｒガス圧は
１ Ｘ １０” Ｔ Ｏｒｒ前後の低ガス圧状態が通常
使用される。そのためＡｒガスの流量は、数１０ｃｃ／
ｗｉｎ程度と少なく、ガス供給配管内面から放出される
水分を多く含むようになり、スパッタターゲット材料（
この場合はＡｆｆｉ）表面を酸化してスパッタ効率を低
下させて成膜速度を劣化させる。さらに、半導体ウェハ
上に成膜されるＡ℃が酸化されて抵抗率が高くなるとと
もに、エレクトロマイグレーション耐性が劣化する。微
細パターンＬＳＩにおいては、配線抵抗が可能な限り小
さくかつ流せる′Ｒ流容Ｍが大きい程望ましい。スパッ
タ空間への水分の混入による成膜台Ｅの酸化は可能な限
り少なくしなければならない。In LSIs with finer patterns, a film formation technology is required to fill metal holes in thin and deep through holes with large aspect ratios, so the Ar gas pressure in the sputtering space is low, around 1 x 10" T Orr. The pressure state is usually used.Therefore, the flow rate of Ar gas is several tens of cc/
The sputter target material (
In this case, Affi) oxidizes the surface, lowering the sputtering efficiency and deteriorating the film formation rate. Further, the A.degree. C. film formed on the semiconductor wafer is oxidized, increasing the resistivity and deteriorating the electromigration resistance. In a fine pattern LSI, it is desirable that the wiring resistance be as small as possible and the R current capacity M be as large as possible. Oxidation of the film forming table E due to moisture entering the sputtering space must be minimized as much as possible.
本発明によるフィルタ内蔵型ガスｙＩ製器を反応室直前
に設置したＲＦバイアススパッタａ装においては、Ａｒ
中の水分濃度は例えば１０ｐｌ）ｂ （露点−１００
℃以下）ときわめて少なく、成膜されたへ２薄膜の抵抗
率は２．５Ｘ１０’ΩＵ程度であり、はとんど高純度の
バルク状態のアルミニウムの抵抗率に等しい直が得られ
ている。エレクトロマイグレーションも、１Ｘ１０ｓ人
／ｃｉ程度まで全く現われないなど、サブミクロンＬＳ
Ｉの配線用金属成膜にきわめて適した技術である。こう
した金属成膜だけでなく、Ｓｉのエピタキシャル成長や
薄いゲート酸化膜形成等の高品位を要求されるプロセス
において、本発明のフィルタ内蔵型ガス精製器はきわめ
て有効である。In the RF bias sputtering system in which the filter-equipped gas yI device according to the present invention is installed just before the reaction chamber, Ar
For example, the moisture concentration inside is 10 pl) b (dew point -100
The resistivity of the formed He2 thin film is approximately 2.5×10' ΩU, which is almost equal to the resistivity of bulk aluminum of high purity. Electromigration does not appear at all up to about 1x10s person/ci, and submicron LS
This technology is extremely suitable for forming metal films for wiring. The filter-integrated gas purifier of the present invention is extremely effective not only in metal film formation, but also in processes that require high quality, such as Si epitaxial growth and thin gate oxide film formation.
本発明によれば、反応室に導入されるガスの純度を更に
高めることができ、最も純度の高い超高純度ガスを反応
室に流すことができるので、反応室内における半導体製
造プロセスを理想的な条件下で行なわせることができる
。According to the present invention, the purity of the gas introduced into the reaction chamber can be further increased, and the ultra-high purity gas with the highest purity can be flowed into the reaction chamber, so that the semiconductor manufacturing process in the reaction chamber can be optimized. It can be done under certain conditions.
第１図は本発明の一実施例を示すガス精製器の断面図、
第２図は第１図のガス精製器を用いた半導体製造装置の
系統図、第３図は再生時の状態を示す系統図、第４図は
ｌ製器を複数用いた場合の系統図、第５図は本発明の他
の実施例を示すガス精製器の断面図である。
１．１′・・・ガス精製器、２・・・ハウジング、６・
・・流入口、７・・・流出口、９・・・吸着剤、１１・
・・第１フィルタ、１２・・・第２フィルタ、１５・・
・反応室。
出願人代理人 弁理士 鈴江武彦
第１図
第２０
第３図
第 ４ 図FIG. 1 is a sectional view of a gas purifier showing an embodiment of the present invention;
Fig. 2 is a system diagram of a semiconductor manufacturing device using the gas purifier shown in Fig. 1, Fig. 3 is a system diagram showing the state during regeneration, and Fig. 4 is a system diagram when a plurality of l-manufacturing devices are used. FIG. 5 is a sectional view of a gas purifier showing another embodiment of the present invention. 1.1'... Gas purifier, 2... Housing, 6...
... Inlet, 7... Outlet, 9... Adsorbent, 11.
...First filter, 12...Second filter, 15...
・Reaction chamber. Applicant's agent Patent attorney Takehiko Suzue Figure 1 Figure 20 Figure 3 Figure 4
Claims (5)
口側に接続されるガス精製器であつて、ガスの流入口お
よび流出口を備えたハウジングと、このハウジング内に
収容された不純ガス除去用の吸着剤と、上記ハウジング
内おいて上記流入口と上記吸着剤との間に設けられた第
１フィルタと、上記ハウジング内において上記吸着剤と
上記流出口との間に設けられた微粒子捕集用の高密度第
２フィルタとを具備したことを特徴とする半導体製造装
置用ガス精製器。(1) A gas purifier connected to the gas intake side of a reaction chamber in a semiconductor manufacturing process, which includes a housing equipped with a gas inlet and an outlet, and a gas purifier for impurity gas removal housed within the housing. an adsorbent; a first filter provided in the housing between the inlet and the adsorbent; and a particulate-collecting filter provided in the housing between the adsorbent and the outlet. 1. A gas purifier for semiconductor manufacturing equipment, comprising: a high-density second filter.
の外周側に上記吸着剤を充填したことを特徴とする特許
請求の範囲第１項記載の半導体製造装置用ガス精製器。(2) The gas purifier for semiconductor manufacturing equipment according to claim 1, wherein the second filter is cylindrical, and the outer periphery of the second filter is filled with the adsorbent.
徴とする特許請求の範囲第１項記載の半導体製造装置用
ガス精製器。(3) The gas purifier for semiconductor manufacturing equipment according to claim 1, wherein the second filter is made of ceramic.
とを特徴とする特許請求の範囲第１項記載の半導体製造
装置用ガス精製器。(4) The gas purifier for semiconductor manufacturing equipment according to claim 1, wherein the second filter is made of conductive ceramic.
る特許請求の範囲第１項記載の半導体製造装置用ガス精
製器。(5) The gas purifier for semiconductor manufacturing equipment according to claim 1, wherein the second filter is made of metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61196621A JPS6351918A (en) | 1986-08-22 | 1986-08-22 | Gas purifier for semi-conductor manufacturing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61196621A JPS6351918A (en) | 1986-08-22 | 1986-08-22 | Gas purifier for semi-conductor manufacturing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6351918A true JPS6351918A (en) | 1988-03-05 |
| JPH0218894B2 JPH0218894B2 (en) | 1990-04-27 |
Family
ID=16360799
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61196621A Granted JPS6351918A (en) | 1986-08-22 | 1986-08-22 | Gas purifier for semi-conductor manufacturing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6351918A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06196441A (en) * | 1992-09-11 | 1994-07-15 | Nec Corp | Manufacture of semiconductor device |
| US5409526A (en) * | 1992-10-06 | 1995-04-25 | Air Products And Chemicals, Inc. | Apparatus for supplying high purity fluid |
| US5829139A (en) * | 1995-05-03 | 1998-11-03 | Pall Corporation | Method for forming a reactive medium |
| EP0897738A1 (en) * | 1997-01-31 | 1999-02-24 | Takasago Thermal Engineering Co. Ltd. | Cleaning apparatus, filter and method of manufacturing the same |
| WO2006129481A1 (en) * | 2005-05-30 | 2006-12-07 | Entegris, Inc. | Gas purifier having reinforced vessel |
| US7465692B1 (en) | 2000-03-16 | 2008-12-16 | Pall Corporation | Reactive media, methods of use and assemblies for purifying |
| JP2010202453A (en) * | 2009-03-03 | 2010-09-16 | Meidensha Corp | Vessel for accumulating liquid ozone |
| JP2015014235A (en) * | 2013-07-04 | 2015-01-22 | 愛三工業株式会社 | Filter device and pressure controller |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0540384U (en) * | 1991-10-28 | 1993-06-01 | 三機工業株式会社 | Flush toilet |
-
1986
- 1986-08-22 JP JP61196621A patent/JPS6351918A/en active Granted
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06196441A (en) * | 1992-09-11 | 1994-07-15 | Nec Corp | Manufacture of semiconductor device |
| US5409526A (en) * | 1992-10-06 | 1995-04-25 | Air Products And Chemicals, Inc. | Apparatus for supplying high purity fluid |
| US5829139A (en) * | 1995-05-03 | 1998-11-03 | Pall Corporation | Method for forming a reactive medium |
| US6066591A (en) * | 1995-05-03 | 2000-05-23 | Pall Corporation | Reactive medium for purifying fluids |
| EP0897738A1 (en) * | 1997-01-31 | 1999-02-24 | Takasago Thermal Engineering Co. Ltd. | Cleaning apparatus, filter and method of manufacturing the same |
| EP0897738A4 (en) * | 1997-01-31 | 2001-02-28 | Takasago Thermal | Cleaning apparatus, filter and method of manufacturing the same |
| US7465692B1 (en) | 2000-03-16 | 2008-12-16 | Pall Corporation | Reactive media, methods of use and assemblies for purifying |
| WO2006129481A1 (en) * | 2005-05-30 | 2006-12-07 | Entegris, Inc. | Gas purifier having reinforced vessel |
| JP2010202453A (en) * | 2009-03-03 | 2010-09-16 | Meidensha Corp | Vessel for accumulating liquid ozone |
| JP2015014235A (en) * | 2013-07-04 | 2015-01-22 | 愛三工業株式会社 | Filter device and pressure controller |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0218894B2 (en) | 1990-04-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5468384A (en) | Module for filtering, separating, purifying gases or liquids, or for catalytic conversion | |
| US6733571B1 (en) | Gas purification system with an integrated hydrogen sorption and filter assembly | |
| USRE35725E (en) | Method and apparatus for removing residual hydrogen from a purified gas | |
| TWI411462B (en) | Fluid purification system with low temperature purifier | |
| US5119541A (en) | Wafer succeptor apparatus | |
| US7125440B2 (en) | Composite structure for high efficiency hydrogen separation and its associated methods of manufacture and use | |
| US5895519A (en) | Method and apparatus for purifying hydrogen gas | |
| JPS6351918A (en) | Gas purifier for semi-conductor manufacturing device | |
| JP2001501693A (en) | Cryopump / getter pump combination pump and its regeneration method | |
| JP3796754B2 (en) | Apparatus and methods for fluid filtration and / or purification | |
| US9592469B2 (en) | Oxygen separation device for a pressure swing adsorption system | |
| KR100483039B1 (en) | Integrated heated getter purifier system | |
| US5426865A (en) | Vacuum creating method and apparatus | |
| US8002875B1 (en) | System and method for separating hydrogen gas from a mixed gas source using composite structure tubes | |
| KR20020047114A (en) | Rejuvenable ambient temperature purifier | |
| JP4429318B2 (en) | Hydrogen gas separator having a composite structure for separating hydrogen with high efficiency, and method for producing and using the same | |
| TWI668045B (en) | High purity gas purifier | |
| JPH1129301A (en) | Production apparatus of ultrapure hydrogen gas | |
| JP2004344694A (en) | Method for purifying original air in air liquefying/separating apparatus | |
| JPH0635650B2 (en) | Ultra high purity gas supply device | |
| JPS5932167B2 (en) | impurity gas trap | |
| JPH1128302A (en) | Trap apparatus for refining gas at low temperature | |
| JPH04290534A (en) | Particle reduction method of low temp, liquid gas using filter | |
| JP2501080Y2 (en) | Argon gas purification equipment | |
| KR20020018140A (en) | Gas purification system and method for removing impurities from a gas |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| EXPY | Cancellation because of completion of term |