JPS6348502A - Reflecting mirror - Google Patents
Reflecting mirrorInfo
- Publication number
- JPS6348502A JPS6348502A JP61192241A JP19224186A JPS6348502A JP S6348502 A JPS6348502 A JP S6348502A JP 61192241 A JP61192241 A JP 61192241A JP 19224186 A JP19224186 A JP 19224186A JP S6348502 A JPS6348502 A JP S6348502A
- Authority
- JP
- Japan
- Prior art keywords
- film
- reflecting mirror
- substrate
- thin
- same manner
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 12
- 239000010408 film Substances 0.000 claims description 40
- 239000002184 metal Substances 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000010409 thin film Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 abstract description 16
- 239000000919 ceramic Substances 0.000 abstract description 9
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 abstract description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 4
- 238000000151 deposition Methods 0.000 abstract description 3
- 230000008020 evaporation Effects 0.000 abstract description 3
- 238000001704 evaporation Methods 0.000 abstract description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract description 3
- 229910010271 silicon carbide Inorganic materials 0.000 abstract description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 abstract description 2
- 239000001301 oxygen Substances 0.000 abstract description 2
- 229910052760 oxygen Inorganic materials 0.000 abstract description 2
- 239000000843 powder Substances 0.000 abstract description 2
- 238000007740 vapor deposition Methods 0.000 abstract description 2
- 238000002310 reflectometry Methods 0.000 abstract 2
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000006731 degradation reaction Methods 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 9
- 239000007789 gas Substances 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 6
- 239000011521 glass Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 2
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
Landscapes
- Optical Elements Other Than Lenses (AREA)
- Optical Filters (AREA)
- Surface Treatment Of Optical Elements (AREA)
Abstract
Description
【発明の詳細な説明】 (産業上の利用分野) 本発明は、反射鏡に関するものである。[Detailed description of the invention] (Industrial application field) The present invention relates to a reflecting mirror.
(従来の技術)
従来、反射鏡例えばHe−Neレーザ用反射鏡はガラス
質基板上に、金属反射膜として、lの真空茎着膜を形成
し、その上に保護膜としてS io、 、S ios
TiO2等を形成したものである。(Prior Art) Conventionally, in a reflecting mirror, for example, a reflecting mirror for a He-Ne laser, a vacuum-stacked film of 1 is formed as a metal reflective film on a glass substrate, and a protective film of S io , , S is formed on the glass substrate. ios
It is made of TiO2 or the like.
(発明が解決しようとする問題点)
しかしながら、この反射鏡は、湿度70%RH以上の環
境下で長期間使用すると、保護膜に微細なりラックが生
じ、そのため金属反射膜が腐食して反射率が低下してし
まうという問題点があった。(Problems to be Solved by the Invention) However, when this reflective mirror is used for a long period of time in an environment with humidity of 70% RH or higher, fine cracks occur in the protective film, which corrodes the metal reflective film and reduces the reflectance. There was a problem in that the value decreased.
(問題点を解決するだめの手段)
本発明者らは鋭意研究した結果、偶然にも保護膜として
SiOx薄膜(ただしl<x<2)を使用すると上記問
題点が解決されることを見い出し、本発明をなすに至っ
た。(Unfortunate Means to Solve the Problem) As a result of intensive research, the present inventors happened to discover that the above problem could be solved by using a SiOx thin film (where l<x<2) as a protective film. The present invention has been accomplished.
従って、本発明は、「基板の上に金属反射膜とS io
x薄膜(ただしl<x<2)を順に形成したことを特徴
とする反射鏡」を提供する。Therefore, the present invention provides ``a metal reflective film on a substrate and an Sio
A reflecting mirror characterized in that x thin films (where l<x<2) are sequentially formed.
(作用)
基板としては、ガラス質基板の他に、ファインセラミッ
ク715F2例えばアルミナ、炭化けい素、窒化けい素
、ジルコニアなどの粉末焼結体又は鎖結晶又は多結晶を
使用することができる。後者は前者に比べ、剛性、耐熱
性、耐湿性などに優れている。基板は予め鏡面に仕上げ
ておく。(Function) In addition to the glass substrate, a powder sintered body, chain crystal, or polycrystal of fine ceramic 715F2 such as alumina, silicon carbide, silicon nitride, and zirconia can be used as the substrate. The latter has better rigidity, heat resistance, moisture resistance, etc. than the former. The board is finished to a mirror surface in advance.
次に基板上に金属反射膜を形成する。使用される金属と
してはA1、Agなどが挙げられる。形成法としては一
船には真空ブと着、イオンブレーティング、スパッタリ
ングなどの薄膜堆積技術が使用される。Next, a metal reflective film is formed on the substrate. Examples of metals used include A1 and Ag. As for the formation method, thin film deposition techniques such as vacuum deposition, ion blasting, and sputtering are used.
次いで、本発明の特徴であるSiOx薄膜t膜を形成す
る。この膜自身は既知であり、一般には蒸着源としてS
iOを用い、少量の酸素ガスを導入した低真空中で茎着
することにより形成される。これによりx=l〜2 (
但し、両端を含まず)、好ましくはX= 1.3〜1.
9特に好ましくはX=1.4〜1.9の店開な薄膜が得
られる。この膜は、Xの値に応してn 、 = 1.4
5〜1.90の屈折率を示す。Next, a SiOx thin film, which is a feature of the present invention, is formed. This film itself is known, and generally S is used as a deposition source.
It is formed by attaching iO in a low vacuum with a small amount of oxygen gas introduced. This allows x=l~2 (
However, both ends are not included), preferably X = 1.3 to 1.
9 Particularly preferably, an open thin film with X=1.4 to 1.9 is obtained. This film has n, = 1.4 depending on the value of
It exhibits a refractive index of 5 to 1.90.
蒸着に代えて高周波マグネトロン・スパッタリングを用
いてもよい。High frequency magnetron sputtering may be used instead of vapor deposition.
SiOx薄膜の膜厚としては、単に保護のためだけなら
ば、一般に0.1〜1.0 mμ好ましくは0.2〜0
.5mμ程度でよい。5iOxi膜は他の機能膜例えば
隼層又は多層反射増加膜の全部又は一部の層を兼用して
いてもよい、その場合、SiOx薄膜は金属反射膜と直
接に接触していることが好ましい。The thickness of the SiOx thin film is generally 0.1 to 1.0 mμ, preferably 0.2 to 0 mμ, if it is just for protection.
.. Approximately 5 mμ is sufficient. The 5iOxi film may also serve as all or part of another functional film, such as a falcon layer or a multilayer reflection-enhancing film. In that case, it is preferable that the SiOx thin film is in direct contact with the metal reflective film.
また、5ioXi膜の上に他の保護膜、機能膜などを形
成してもよい。Further, other protective films, functional films, etc. may be formed on the 5ioXi film.
以下、実施例により本発明を具体的に説明するが、本発
明はこれに限定されるものではない。EXAMPLES Hereinafter, the present invention will be specifically explained with reference to Examples, but the present invention is not limited thereto.
(実施例1)
鏡面研磨したアルミナ・ファインセラミック基板上に、
真空度I X 10−’〜5 X 10−’Torrで
Alを0.2μm蒸着することにより金属反射膜を形成
した。(Example 1) On a mirror-polished alumina fine ceramic substrate,
A metal reflective film was formed by depositing Al to a thickness of 0.2 μm at a vacuum degree of I x 10-' to 5 x 10-' Torr.
次にチャンバー内を一旦真空度5 Xl0−6Torr
まで排気したあと、酸素を導入して真空度を3 X 1
0−’〜6 X 10−’Torrにした後、蒸着源に
SiOをセントして蒸着を行ない、膜厚:A波長(基準
波長λ。−632,8nm)のSiOx膜(na=1.
50)を形成することにより反射鏡を作成した。Next, the chamber was once vacuumed to 5 Xl0-6 Torr.
After evacuating to
After adjusting the pressure to 0-' to 6 x 10-' Torr, SiO was placed in the evaporation source and evaporation was performed to form a SiOx film (na=1.
A reflecting mirror was created by forming 50).
(実施例2)
実施例1と同様にS iox膜(n、 =1.50)を
形成した後、更にその上に真空度lXl0−’〜5 X
10− ’Torrで膜厚:一り波長(基準波長λ。(Example 2) After forming a Siox film (n, = 1.50) in the same manner as in Example 1, a vacuum degree of 1X10-' to 5X was further applied thereon.
Film thickness at 10-'Torr: one wavelength (reference wavelength λ.
−632,8nm)のCe 02(ni =2.10)
膜を形成した。-632,8 nm) Ce 02 (ni = 2.10)
A film was formed.
ここでは、SiOxとCe O2の2層膜は、反射増加
膜を構成し、SiOxは保護膜と反射増加膜の一部を兼
用する。Here, the two-layer film of SiOx and CeO2 constitutes a reflection increasing film, and SiOx serves both as a protective film and a part of the reflection increasing film.
(実施例3)”
実施例2に於いて、Ceo!の代わりにTi 01(n
、 =2.60)を使用した外は、全く同様にして反射
鏡を作成した。(Example 3)” In Example 2, Ti 01(n
, = 2.60) was used, but a reflecting mirror was created in exactly the same manner.
(実施例4)
実施例2に於いて、Ce O,の代わりにZr OH(
n、 =2.15)を使用した外は、全く同様にして反
射鏡を作成した。(Example 4) In Example 2, Zr OH (
A reflecting mirror was produced in exactly the same manner, except that n, = 2.15) was used.
(比較例1)
比較のために、実施例1と同様にして金属反射膜を形成
した後、蒸着源にSin、をセ−/ トし真空度I X
10−’〜5 X 10−’Torrで膜厚:A波長
(基土波長λ。=632.8 nm)のSin、膜(n
4=1.46)を形成することにより反射鏡を作成した
。(Comparative Example 1) For comparison, a metal reflective film was formed in the same manner as in Example 1, and then a vacuum of I
10-' to 5 X 10-' Torr, film thickness: Sin of wavelength A (base wavelength λ. = 632.8 nm), film (n
4=1.46) to create a reflecting mirror.
(試験例1)
実施例および比較例で作成した反射鏡について、波長λ
−632,8nmの測定光を用いて反射率(%)を測定
した後、耐熱性、耐湿性を調べるため、温Y品度す・イ
クルシ式験(温度ニー40〜↓150℃、ン兄度:20
〜95%RH)を30サイクル行ない、その後再び反射
率(%)を同様に測定した。この結果を次の第1表に示
す。(Test Example 1) Regarding the reflecting mirrors created in the examples and comparative examples, the wavelength λ
After measuring the reflectance (%) using a measurement light of -632.8 nm, in order to examine heat resistance and moisture resistance, temperature :20
~95% RH) was performed for 30 cycles, and then the reflectance (%) was measured again in the same manner. The results are shown in Table 1 below.
第 1 表 (真空蒸着法)
*実=実施例 比−比較例
次に金属反射膜及びSi Ox保護膜を高周波マグネト
ロン・スパッタリング法によって形成した反射鏡の実施
例を示す。Table 1 (Vacuum Deposition Method) * Actual = Example Comparison - Comparative Example Next, examples of reflective mirrors in which a metal reflective film and a SiOx protective film were formed by high frequency magnetron sputtering method will be shown.
(実施例5)
スパックリング装置に、鏡面1:1+磨したアルミナ・
ファインセラミック基)反とAβクーゲットをセットし
、チャンバー内布一旦真空度; 5 XIO−6Tor
rまで排気した後、Arガスを導入してArガス圧lX
l0−3〜4 X 10−’Torrに保ってスパック
リングを行ない、基板上に厚さ0.2μmのAff(金
属反射膜)を形成させた。(Example 5) Mirror surface 1:1 + polished alumina was added to the spackling device.
Set the fine ceramic base) cloth and Aβ Kuget, and once vacuum the inside of the chamber; 5 XIO-6Tor
After exhausting to r, Ar gas is introduced and the Ar gas pressure is increased to lX.
Spackling was performed while maintaining the pressure at 10-3 to 4 x 10-' Torr to form an Aff (metal reflective film) with a thickness of 0.2 μm on the substrate.
次にターゲットをSiOに取替え、Ar分圧:I X
10−” 4 X 10−’Torr、酸素分圧: 5
Xl0−’〜2 X 1O−3Torrの混合ガスを
導入してスパッタリングを行ない、基板上に厚さ:′A
波長(基準波長λo ””632.8 nm)のS i
Ox Cn、 =1.48)を形成させることにより
反射鏡を作成した。Next, the target was replaced with SiO, and Ar partial pressure: I
10-” 4 X 10-’Torr, oxygen partial pressure: 5
Sputtering is performed by introducing a mixed gas of
S i of wavelength (reference wavelength λo “”632.8 nm)
A reflecting mirror was created by forming Ox Cn, =1.48).
(実施例6)
実施例5と同様にS i Ox (n a = 1,4
8)を形成させた後、ターゲットをCeO2に取替え、
A、rガス圧: 1 xlo−3〜6 Xl0−3To
rrの条件でスパッタリングを行ない、厚さ:A彼長(
基準波長λ。(Example 6) Similar to Example 5, S i Ox (n a = 1,4
After forming 8), replace the target with CeO2,
A, r gas pressure: 1 xlo-3~6 Xl0-3To
Sputtering was performed under the conditions of rr, thickness: A length (
Reference wavelength λ.
=632.8 nm)のCe Ozを堆積させ、これ↓
こより反射鏡を完成させた。= 632.8 nm) was deposited, and this↓
I completed the reflective mirror.
(実施例7)
実施例6に於いて、CeO,ターゲットの代わりにTi
O□ターゲットを使用した外は全(同様にして反射鏡を
作成した。(Example 7) In Example 6, Ti was used instead of CeO and the target.
All except for using the O□ target (a reflecting mirror was created in the same way.
(実施例8)
実施例6に於いて、Ce Ozターゲットの代わりにZ
r○2ターゲットを使用した外は全く同様にして反射鏡
を作成した。(Example 8) In Example 6, Z
A reflector was created in exactly the same manner except that an r○2 target was used.
(比較例2)
比較のために、実施例5と同様にして金属反射膜を形成
した後、ターゲットにSiO□をセントしArガス圧:
I Xl0−’〜6 Xl0−’Torrでスパッタ
リングを行ない、膜Pi : ’A波長(基準波長λ。(Comparative Example 2) For comparison, after forming a metal reflective film in the same manner as in Example 5, SiO□ was added to the target and Ar gas pressure:
Sputtering is performed at I Xl0-' to 6 Xl0-' Torr, and the film Pi: 'A wavelength (reference wavelength λ.
=632.8 nm)のSin、膜(n、 =1.45
1を形成することにより反射鏡を作成した。= 632.8 nm), film (n, = 1.45
A reflecting mirror was created by forming 1.
(比較例3a)
比較のために、実施例6に於いてSiOの代わりに、タ
ーゲットとしてAltOyを用いArガス圧: 1 x
lo−3〜6 Xl0−’Torrの条件でスバ・ツタ
リングしてA6zOiFjE膜(n、 =1.60)を
形成した外は実施例6と同様にして反射鏡を作成した。(Comparative Example 3a) For comparison, AltOy was used as a target instead of SiO in Example 6, and Ar gas pressure: 1 x
A reflecting mirror was produced in the same manner as in Example 6, except that an A6zOiFjE film (n, = 1.60) was formed by swaying under the conditions of lo-3 to 6 Xl0-'Torr.
(比較例3b)
比較のために、実施例6に於いてSiOの代わりに、タ
ーゲットとしてMgFzを用いArガス圧: I X
10−3〜6 X 1O−3Torrの条件でスパッタ
リングしてMgF、薄膜(na =1.38)を形成し
た外は実施例6と同様にして反射鏡を作成した。(Comparative Example 3b) For comparison, MgFz was used as a target instead of SiO in Example 6, and Ar gas pressure: I
A reflecting mirror was produced in the same manner as in Example 6, except that a thin MgF film (na = 1.38) was formed by sputtering under conditions of 10-3 to 6 X 1O-3 Torr.
(比較例4)
比1!2のために、実施例7に於いてSiOの代わりに
、ターゲットとしてMgFZを用いArガス圧: I
Xl0−’〜6 Xl0−’Torrの条件でスパック
リングしてMgF、薄膜(na =1.38)を形成し
た外は実施例7と同様にして反射鏡を作成した。(Comparative Example 4) For a ratio of 1:2, MgFZ was used as a target instead of SiO in Example 7, and Ar gas pressure: I
A reflecting mirror was produced in the same manner as in Example 7, except that a thin MgF film (na = 1.38) was formed by sputtering under conditions of Xl0-' to 6 Xl0-' Torr.
(比較例5)
比較のために、実施例8に於いて5iOO代わりに、タ
ーゲットとしてMgF2を用いArガス圧: I X
10−3〜6 X 10−’Torrの条件でスパッタ
リングしてMgF2薄膜(na =1.38)を形成し
た外は実施例8と同様にして反射鏡を作成した。(Comparative Example 5) For comparison, MgF2 was used as a target instead of 5iOO in Example 8, and Ar gas pressure: I
A reflecting mirror was prepared in the same manner as in Example 8, except that a MgF2 thin film (na = 1.38) was formed by sputtering under conditions of 10-3 to 6 x 10-'Torr.
(試験例2)
実施例および比較例で作成した反射鏡について試験例1
と同様に試験に供し、試験前後の反射率を測定した。こ
の結果を次の第2表に示す。(Test Example 2) Test Example 1 for the reflecting mirrors created in Examples and Comparative Examples
It was subjected to a test in the same manner as above, and the reflectance before and after the test was measured. The results are shown in Table 2 below.
第2 表(高周波マクネトロンスバフタリンク ?
去)次に、各種のファインセラミック凸仮に反射膜を形
成した実施例を示す。Table 2 (High Frequency Macnetrons Bafta Link?
Next, examples will be shown in which reflective films are formed on various fine ceramic convexes.
(実施例9)
鏡面研磨したジルコニア・ファインセラミツ’)基冬反
を用い、実、5(例6と同様に反射鏡を作成した。(Example 9) A reflecting mirror was prepared in the same manner as in Example 5 (Example 6) using mirror-polished zirconia/fine ceramics.
この反射鏡の反射率を測定したところ95%(測定波長
λ。−632,8nm)であった。When the reflectance of this reflecting mirror was measured, it was 95% (measured wavelength λ: -632.8 nm).
次に、試験例1に従って試験を行なった後、反射率を測
定したところ933石であった。Next, after conducting a test according to Test Example 1, the reflectance was measured and found to be 933 stones.
(実施例10)
鏡面研磨した炭化けい素・ファインセラミンク基板を用
い、実施例2と同様に反射鏡を作成した。(Example 10) A reflecting mirror was created in the same manner as in Example 2 using a mirror-polished silicon carbide/fine ceramic substrate.
この反射鏡の反射率を測定したところ93%(測定波長
λ。−632,8nm)であった。When the reflectance of this reflecting mirror was measured, it was 93% (measurement wavelength λ: -632.8 nm).
次に、試験例1に従って試験を行なった後、反射ぶを測
定したところ92%であった。Next, after conducting a test according to Test Example 1, the reflection was measured and found to be 92%.
(実施例11)
鏡面研磨したマグネシア・ファインセラミック基板を用
い、実施例3と同様に反射鏡を作成した。(Example 11) A reflecting mirror was created in the same manner as in Example 3 using a mirror-polished magnesia fine ceramic substrate.
この反射鏡の反射率を測定したところ92%(測定波長
λ6”’632.8 nm)であった・次に試験例1に
従って試験を行なったが、反射率は変化しなかった。The reflectance of this mirror was measured and found to be 92% (measured wavelength λ6'''632.8 nm).Next, a test was conducted according to Test Example 1, but the reflectance did not change.
(発明の効果)
以上のように本発明によれば、耐熱性、耐湿性に優れた
反射鏡が得られる。本発明の反射鏡は、特に基板として
ファインセラミックを用いた場合にはHe−Neレーザ
用反射鏡として有用である。(Effects of the Invention) As described above, according to the present invention, a reflecting mirror with excellent heat resistance and moisture resistance can be obtained. The reflecting mirror of the present invention is useful as a reflecting mirror for a He-Ne laser, especially when fine ceramic is used as the substrate.
Claims (1)
2)を順に形成したことを特徴とする反射鏡。A metal reflective film and a SiOx thin film (1<x<
A reflecting mirror characterized by forming 2) in this order.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61192241A JPS6348502A (en) | 1986-08-18 | 1986-08-18 | Reflecting mirror |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61192241A JPS6348502A (en) | 1986-08-18 | 1986-08-18 | Reflecting mirror |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6348502A true JPS6348502A (en) | 1988-03-01 |
Family
ID=16288004
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61192241A Pending JPS6348502A (en) | 1986-08-18 | 1986-08-18 | Reflecting mirror |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6348502A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6211417A (en) * | 1986-07-16 | 1987-01-20 | 株式会社ヰセキエンジニアリング | Steam rice cooking apparatus |
JPS6211420A (en) * | 1986-07-16 | 1987-01-20 | 株式会社ヰセキエンジニアリング | Steam rice cooking apparatus |
JPS6211416A (en) * | 1986-07-16 | 1987-01-20 | 株式会社ヰセキエンジニアリング | Steam rice cooking apparatus |
JPS6211419A (en) * | 1986-07-16 | 1987-01-20 | アイセック株式会社 | Steam rice cooking apparatus |
JPS6211415A (en) * | 1986-07-16 | 1987-01-20 | 株式会社ヰセキエンジニアリング | Steam rice cooking apparatus |
JPH02185076A (en) * | 1988-12-17 | 1990-07-19 | Samsung Electron Co Ltd | Light-emitting device |
JPH0469603A (en) * | 1990-07-10 | 1992-03-04 | Copal Co Ltd | Reflecting mirror consisting of multilayer film |
JP2007017610A (en) * | 2005-07-06 | 2007-01-25 | Shimadzu Corp | Hydrofluoric acid resistant protective film and optical element |
-
1986
- 1986-08-18 JP JP61192241A patent/JPS6348502A/en active Pending
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0510931B2 (en) * | 1986-07-16 | 1993-02-12 | Iseki Foods Eng Kk | |
JPS6211420A (en) * | 1986-07-16 | 1987-01-20 | 株式会社ヰセキエンジニアリング | Steam rice cooking apparatus |
JPS6211416A (en) * | 1986-07-16 | 1987-01-20 | 株式会社ヰセキエンジニアリング | Steam rice cooking apparatus |
JPS6211419A (en) * | 1986-07-16 | 1987-01-20 | アイセック株式会社 | Steam rice cooking apparatus |
JPS6211415A (en) * | 1986-07-16 | 1987-01-20 | 株式会社ヰセキエンジニアリング | Steam rice cooking apparatus |
JPH055489B2 (en) * | 1986-07-16 | 1993-01-22 | Iseki Foods Eng Kk | |
JPH055490B2 (en) * | 1986-07-16 | 1993-01-22 | Iseki Foods Eng Kk | |
JPS6211417A (en) * | 1986-07-16 | 1987-01-20 | 株式会社ヰセキエンジニアリング | Steam rice cooking apparatus |
JPH0512928B2 (en) * | 1986-07-16 | 1993-02-19 | Iseki Foods Eng Kk | |
JPH0512929B2 (en) * | 1986-07-16 | 1993-02-19 | Iseki Foods Eng Kk | |
JPH02185076A (en) * | 1988-12-17 | 1990-07-19 | Samsung Electron Co Ltd | Light-emitting device |
JPH0469603A (en) * | 1990-07-10 | 1992-03-04 | Copal Co Ltd | Reflecting mirror consisting of multilayer film |
JP2007017610A (en) * | 2005-07-06 | 2007-01-25 | Shimadzu Corp | Hydrofluoric acid resistant protective film and optical element |
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