JP2754516B2 - Silicon dioxide thin film - Google Patents
Silicon dioxide thin filmInfo
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- JP2754516B2 JP2754516B2 JP3251466A JP25146691A JP2754516B2 JP 2754516 B2 JP2754516 B2 JP 2754516B2 JP 3251466 A JP3251466 A JP 3251466A JP 25146691 A JP25146691 A JP 25146691A JP 2754516 B2 JP2754516 B2 JP 2754516B2
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- Prior art keywords
- thin film
- sio
- film
- silicon dioxide
- refractive index
- Prior art date
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Description
【０００１】[0001]
【産業上の利用分野】本発明は、反射鏡などの基板を被
覆する二酸化珪素薄膜に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a silicon dioxide thin film for covering a substrate such as a reflector.
【０００２】[0002]
【従来の技術】一般に、二酸化珪素（ＳｉＯ2 ）薄膜
は、アルミニウムを反射面とした基板の保護膜や光学的
多層膜における低屈折率物質として幅広く使用されてい
る。そして、このＳｉＯ2 薄膜を、例えばアルミ鏡の保
護膜として被着させる場合、主として真空蒸着法が採用
され、その蒸着手段として電子ビーム加熱による直接蒸
着、または酸素雰囲気中における抵抗加熱による反応蒸
着などがある。 2. Description of the Related Art In general, a silicon dioxide (SiO 2 ) thin film is widely used as a low refractive index material in a protective film of a substrate having aluminum as a reflection surface or an optical multilayer film. When this SiO 2 thin film is applied as, for example, a protective film of an aluminum mirror, a vacuum evaporation method is mainly employed, and as the evaporation means, direct evaporation by electron beam heating, or reactive evaporation by resistance heating in an oxygen atmosphere is used. There is.
【０００３】ところが、上記手段によって成膜されるＳ
ｉＯ2 薄膜は、いずれも以下に示す欠点を有している。[0003] However, the S
Each of the iO 2 thin films has the following disadvantages.
【０００４】すなわち、図１０に示すように、アルミ鏡
面上に０．２μｍのＳｉＯ2 の保護膜を被着させたもの
と、同じく０．２μｍの酸化アルミニウム（Ａｌ
2 Ｏ3 ）薄膜の保護膜を被着させたものとを高温・高湿
（温度５０℃、湿度９０％）の雰囲気中に放置した場
合、両薄膜の最高反射率の変化から明らかなようにＳｉ
Ｏ2 薄膜はＡｌ2 Ｏ3 薄膜に比較して耐湿性に極めて劣
ることが判る。したがって、単なる保護膜としてはＳｉ
Ｏ2 薄膜の代りにＡｌ2 Ｏ3 薄膜を使用することが一応
の改善策として考えられる。That is, as shown in FIG. 10, a 0.2 μm SiO 2 protective film is deposited on an aluminum mirror surface, and a 0.2 μm aluminum oxide (Al
2 O 3) and those of the protective film of the thin film was deposited a high temperature and high humidity (temperature 50 ° C., when left to stand in an atmosphere of 90% humidity), as it is clear from the change in the best reflectivity of both films Si
It can be seen that the O 2 thin film is extremely inferior in moisture resistance to the Al 2 O 3 thin film. Therefore, as a mere protective film, Si
The use of an Al 2 O 3 thin film instead of the O 2 thin film can be considered as a temporary improvement measure.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、上記Ａ
ｌ2 Ｏ3薄膜を低屈折率物質として光学薄膜（特に、コ
ールドミラーやバンドパスフィルタなど）に使用する場
合、Ａｌ2 Ｏ3 の屈折率が１．６３とＳｉＯ2 の１．４
６に比べてかなり高いため、同じ層数の多層膜であって
もＳｉＯ2 を含む多層膜と比較して反射域の幅・反射率
の低下を招く欠点を有している。However, the above A
When an l 2 O 3 thin film is used as a low refractive index material for an optical thin film (particularly, a cold mirror or a bandpass filter), the refractive index of Al 2 O 3 is 1.63 and that of SiO 2 is 1.4.
Since it is considerably higher than that of 6, even a multilayer film having the same number of layers has a drawback that the width and reflectance of the reflection region are reduced as compared with a multilayer film containing SiO 2 .
【０００６】本発明は、上記事情に鑑みてなされたもの
で、ＳｉＯ2 薄膜の屈折率に変化を与えることなく、し
かもＡｌ2 Ｏ3 薄膜と同程度以上の高温・高湿に対する
耐久性を備えている二酸化珪素薄膜を提供することを目
的とする。The present invention has been made in view of the above circumstances, and has a durability to a high temperature and high humidity which is not less than that of the Al 2 O 3 thin film without changing the refractive index of the SiO 2 thin film. It is an object of the present invention to provide a silicon dioxide thin film.
【０００７】[0007]
【課題を解決するための手段】本発明は、上記目的を達
成するために、基板を被覆する低屈折率物質として金属
スズ０．５〜１０重量％含有の二酸化珪素を使用したこ
とを特徴とする。In order to achieve the above object, the present invention is characterized in that silicon dioxide containing 0.5 to 10% by weight of metal tin is used as a low refractive index material for coating a substrate. I do.
【０００８】[0008]
【作用】本発明は上記のように構成したので、二酸化珪
素薄膜の屈折率に変化を与えることなく、二酸化珪素薄
膜の耐久性が格段に向上される。According to the present invention, the durability of the silicon dioxide thin film is remarkably improved without changing the refractive index of the silicon dioxide thin film.
【０００９】[0009]
【実施例】以下、図面を参照して本発明の実施例を説明
する。Embodiments of the present invention will be described below with reference to the drawings.
【００１０】まず、図１に示すように、アルミ鏡面から
なる基板1 に低屈折率物質としての二酸化珪素（ＳｉＯ
2 ）に金属スズ（Ｓｎ）を混合して被着し、その薄膜2
の屈折率について調べた。図２は、ＳｉＯ2とＳｎとの
混合重量比と、それに対応するＳｉＯ2 薄膜2 の屈折率
を示しており、薄膜2 は真空蒸着法により以下に示す蒸
着条件で成膜した。First, as shown in FIG. 1, silicon dioxide (SiO 2) as a low refractive index
2 ) mixed with metallic tin (Sn) and deposited,
Was examined for the refractive index. FIG. 2 shows the mixture weight ratio of SiO 2 and Sn and the corresponding refractive index of the SiO 2 thin film 2. The thin film 2 was formed by a vacuum evaporation method under the following evaporation conditions.
【００１１】(1) 真空度 １×１０-4〜５×１０-4To
rr（1.3 〜 6.7×１０-2Ｐａ） (2) 基板温度 ２５０〜３００℃ (3) 蒸発源 電子ビーム (4) 蒸発剤 ＳｉＯ2 とＳｎの混合物。(1) Degree of vacuum 1 × 10 -4 to 5 × 10 -4 To
rr (1.3 to 6.7 × 10 -2 Pa) (2) Substrate temperature 250 to 300 ° C. (3) Evaporation source Electron beam (4) Evaporant A mixture of SiO 2 and Sn.
【００１２】また、上記蒸着法とは異なる２元蒸着法に
よっても容易に同様のＳｉＯ2 の薄膜2 の被着が行なわ
れる。The same deposition of the SiO 2 thin film 2 can be easily performed by a binary vapor deposition method different from the above vapor deposition method.
【００１３】図２に示すように、Ｓｎを含有するＳｉＯ
2 の薄膜2は、添加物であるＳｎの添加量がＳｉＯ2 に
対し１０重量％以下においてはＳｉＯ2 の屈折率１．４
６にほぼ等しい値を示し、屈折率に変化を与えないこと
が判明した。[0013] As shown in FIG.
The thin film 2 of Example 2 has a refractive index of 1.4 for SiO 2 when the additive amount of Sn as an additive is 10% by weight or less based on SiO 2.
It showed a value almost equal to 6, indicating that the refractive index was not changed.
【００１４】続いて、Ｓｎの添加量が１０重量％以下に
おけるＳｉＯ2 薄膜2 の高温・高湿の環境下の耐久性に
ついて評価し、図３に示す評価結果が得られた。すなわ
ち、図３は、アルミ鏡面からなる基板1 に０．２μｍの
ＳｉＯ2 薄膜2 （添加されるＳｎの量がそれぞれ０．
３、０．５、１、３、７、および１０各重量％）の各保
護膜を成膜したアルミ鏡を高温・高湿（温度５０℃、湿
度９０％）の雰囲気中に放置した場合の膜の最高反射率
の変化を示すものである。Subsequently, the durability of the SiO 2 thin film 2 in a high-temperature and high-humidity environment when the amount of Sn added was 10% by weight or less was evaluated, and the evaluation results shown in FIG. 3 were obtained. That is, FIG. 3 shows that a 0.2 μm SiO 2 thin film 2 (the amount of added Sn was 0.1 μm) was formed on a substrate 1 having an aluminum mirror surface.
(3, 0.5, 1, 3, 7, and 10% by weight each) when the aluminum mirror on which each protective film is formed is left in an atmosphere of high temperature and high humidity (temperature 50 ° C., humidity 90%). It shows the change in the maximum reflectance of the film.
【００１５】図３に示すように、Ａｌ2 Ｏ3 保護膜と比
較し、添加されるＳｎの量が０．３重量％のＳｉＯ2 薄
膜2 の保護膜は、Ａｌ2 Ｏ3 保護膜の２５０時間に対し
て、２４０時間で反射率が８５％に低下して使用不可と
なり、また、Ｓｎの添加量が０．５〜１０重量％のＳｉ
Ｏ2 保護膜は、０．５重量％でＡｌ2 Ｏ3 保護膜と同程
度の耐久性が得られ、かつ添加量の増量とともに耐久性
が増大することが判明した。As shown in FIG. 3, as compared with the Al 2 O 3 protective film, the protective film of the SiO 2 thin film 2 containing 0.3% by weight of added Sn is 250% of the Al 2 O 3 protective film. In 240 hours, the reflectance was reduced to 85% in 240 hours, and it became unusable. In addition, the amount of Sn added was 0.5 to 10% by weight of Si.
It was found that 0.5% by weight of the O 2 protective film provided the same level of durability as the Al 2 O 3 protective film, and that the durability increased as the amount of addition increased.
【００１６】したがって、Ｓｎの添加量が０．５重量％
未満の場合には、Ａｌ2 Ｏ3 保護膜と対比して、上記し
たように耐久性の低下が著しくなり、また１０重量％を
上回る場合には屈折率が高くなり、光学的薄膜に使用す
る場合、反射域の幅・反射率の低下を招くこととなる。
このように、ＳｉＯ2 薄膜2 へのＳｎの添加量として
は、０．５〜１０重量％の添加量が好ましい。Therefore, the amount of Sn added is 0.5% by weight.
If it is less than 10% by weight, the refractive index becomes high as compared with the Al 2 O 3 protective film, and if it exceeds 10% by weight, it is used as an optical thin film. In this case, the width of the reflection area and the reflectance are reduced.
Thus, the amount of Sn added to the SiO 2 thin film 2 is preferably 0.5 to 10% by weight.
【００１７】また、アルミ鏡面からなる基板1 に０．２
μｍのＳｉＯ2 薄膜2 に二酸化スズ（ＳｎＯ2 ）を添加
（添加されるＳｎＯ2 の量がそれぞれ１、５、１０、お
よび１５各重量％）した各保護膜を有するアルミ鏡を高
温・高湿（温度５０℃、湿度９０％）の雰囲気中に放置
した場合の膜の最高反射率の変化を図４に示す。ここ
で、ＳｉＯ2 薄膜2 にＳｎＯ2 を添加した保護膜は真空
蒸着法により以下に示す蒸着条件で成膜した。The substrate 1 made of an aluminum mirror surface has a thickness of 0.2
An aluminum mirror having each protective film in which tin dioxide (SnO 2 ) was added to the μm SiO 2 thin film 2 (the amount of SnO 2 added was 1, 5, 10 and 15% by weight, respectively) was heated and humidified. FIG. 4 shows the change in the maximum reflectance of the film when left in an atmosphere (temperature: 50 ° C., humidity: 90%). Here, a protective film in which SnO 2 was added to the SiO 2 thin film 2 was formed by a vacuum evaporation method under the following evaporation conditions.
【００１８】(1) 真空度 １×１０-4〜５×１０-4To
rr（1.3 〜 6.7×１０-2Ｐａ） (2) 基板温度 ２５０〜３００℃ (3) 蒸発源 電子ビーム (4) 蒸発剤 ＳｉＯ2 とＳｎＯ2 の混合物。(1) Degree of vacuum 1 × 10 -4 to 5 × 10 -4 To
rr (1.3 to 6.7 × 10 -2 Pa) (2) Substrate temperature 250 to 300 ° C. (3) Evaporation source Electron beam (4) Evaporant A mixture of SiO 2 and SnO 2 .
【００１９】図３および図４から明らかなように、Ｓｉ
Ｏ2 薄膜2に金属スズ（Ｓｎ）を添加した保護膜が酸化
スズ（ＳｎＯ2 ）を添加した保護膜より耐久性に優れて
いることが判明した。これは酸化珪素（ＳｉＯ2 ）中に
残存する非架橋酸素の数を金属スズ（Ｓｎ）の方が酸化
スズ（ＳｎＯ2 ）より減少させることができ、化学的に
安定性を向上させるためと推測される。As is apparent from FIGS. 3 and 4, Si
It was found that the protective film in which metal tin (Sn) was added to the O 2 thin film 2 was more durable than the protective film in which tin oxide (SnO 2 ) was added. This is presumed to be because metal tin (Sn) can reduce the number of non-bridging oxygen remaining in silicon oxide (SiO 2 ) more than tin oxide (SnO 2 ), thereby chemically improving the stability. Is done.
【００２０】次に、Ｓｎ含有のＳｉＯ2 薄膜2 を低屈折
率物質として光学的薄膜、例えばコールドミラーにおけ
る多層膜に適用した例について、図５乃至図９を参照し
説明する。Next, an example in which the Sn-containing SiO 2 thin film 2 is applied as a low refractive index material to an optical thin film, for example, a multilayer film in a cold mirror will be described with reference to FIGS.
【００２１】図５において、反射基板3 は、例えば硬質
ガラスからなるハロゲンランプ用反射鏡であり、その一
面を拡開させた回転放物状の凹部4 を有している。この
凹部4 の中心には光源となるハロゲンランプ5 が装着さ
れ、さらに凹部4 の内面上には可視光反射赤外線透過膜
である多層膜6 が被着されている。In FIG. 5, a reflecting substrate 3 is a reflecting mirror for a halogen lamp made of, for example, hard glass, and has a parabolic concave portion 4 having one surface thereof expanded. A halogen lamp 5 serving as a light source is mounted at the center of the concave portion 4, and a multilayer film 6 which is a visible light reflecting infrared transmitting film is attached on an inner surface of the concave portion 4.
【００２２】上記多層膜6 は、Ｓｎ含有のＳｉＯ2 薄膜
2 を低屈折率物質とし、また二酸化チタン（ＴｉＯ2 ：
屈折率２．３１）を高屈折率物質として、これらを交互
に１７層積層して成膜したＴｉＯ2 ／ＳｉＯ2 交互層か
らなっている。この多層膜6は、真空蒸着法により以下
に示す蒸着条件で成膜した。The multilayer film 6 is a Sn-containing SiO 2 thin film.
2 is a low refractive index material, and titanium dioxide (TiO 2 :
A high refractive index material having a refractive index of 2.31) is formed of alternating TiO 2 / SiO 2 layers formed by alternately stacking 17 layers of these materials. This multilayer film 6 was formed by a vacuum evaporation method under the following evaporation conditions.
【００２３】(1) 真空度 １×１０-4〜５×１０-4To
rr（1.3 〜 6.7×１０-2Ｐａ） (2) 基板温度 ２５０〜３００℃ (3) 蒸発源 電子ビーム。(1) Degree of vacuum 1 × 10 -4 to 5 × 10 -4 To
rr (1.3 to 6.7 × 10 -2 Pa) (2) Substrate temperature 250 to 300 ° C. (3) Evaporation source Electron beam.
【００２４】表１にＳｎを３重量％含有したＳｉＯ2 に
よるＴｉＯ2 ／ＳｉＯ2 交互層、表２にＳｎを含まない
ＳｉＯ2 によるＴｉＯ2 ／ＳｉＯ2 交互層、および表３
に比較例としてＡｌ2 Ｏ3 を低屈折率物質としたＴｉＯ
2 ／Ａｌ2 Ｏ3 交互層の膜構成をそれぞれ示す。これら
の交互膜は上記蒸着条件で成膜されており、これらの交
互膜の分光透過率特性を図６乃至図８に示す。[0024] Table TiO 2 / SiO 2 alternating layer by SiO 2 which contains Sn 3% by weight 1, TiO 2 / SiO 2 alternating layer by SiO 2 containing no Sn in Table 2, and Table 3
As a comparative example, TiO using Al 2 O 3 as a low refractive index material
The film configuration of the 2 / Al 2 O 3 alternating layer is shown respectively. These alternate films are formed under the above evaporation conditions, and the spectral transmittance characteristics of these alternate films are shown in FIGS.
【００２５】[0025]
【表１】 [Table 1]
【００２６】[0026]
【表２】 [Table 2]
【００２７】[0027]
【表３】 [Table 3]
【００２８】図６乃至図８に示す分光透過率特性から明
らかなように、Ｓｎを３重量％含有したＳｉＯ2 による
ＴｉＯ2 ／ＳｉＯ2 交互層の分光透過率特性は、Ｓｎを
含まないＳｉＯ2 によるＴｉＯ2 ／ＳｉＯ2 交互層やＴ
ｉＯ2 ／Ａｌ2Ｏ3 交互層の分光透過率特性とほとんど
光学特性上は差異が認められない。したがって、Ｓｎを
含有したＳｉＯ2 薄膜を光学的薄膜として使用可能なこ
とが判明した。[0028] FIG. 6 to As is clear from the spectral transmittance characteristic shown in FIG. 8, the spectral transmittance characteristics of the TiO 2 / SiO 2 alternating layer by SiO 2 which contains Sn 3% by weight, SiO 2 containing no Sn TiO 2 / SiO 2 alternate layer and T
There is almost no difference between the spectral transmittance characteristic of the iO 2 / Al 2 O 3 alternate layer and the optical characteristic. Therefore, it was found that a SiO 2 thin film containing Sn can be used as an optical thin film.
【００２９】また、上記膜構成の各交互層について、以
下の条件でサンシャインウェザーメータテストにより耐
久性の評価を行なった。The durability of each alternate layer having the above-mentioned film configuration was evaluated by a sunshine weather meter test under the following conditions.
【００３０】(1) 温度 ６３±３℃ (2) 水噴射条件 １２０分照射中に１８分間。(1) Temperature 63 ± 3 ° C. (2) Water injection condition 18 minutes during irradiation for 120 minutes.
【００３１】上記サンシャインウェザーメータテストに
よる評価結果を図９に示すが、図９から明らかなよう
に、Ｓｎを含有させたＳｉＯ2 薄膜は、ＳｉＯ2 単体の
薄膜やＡｌ2 Ｏ3 薄膜に比べ高温・高湿に対する耐久性
が格段に向上することが認められた。FIG. 9 shows the results of the sunshine weather meter test. As is clear from FIG. 9, the SiO 2 thin film containing Sn has a higher temperature than the thin film of SiO 2 alone or the Al 2 O 3 thin film. -It was recognized that the durability against high humidity was significantly improved.
【００３２】なお、上記実施例では、多層膜の形成方法
を真空蒸着法としたが、これに限らず、イオンプレーテ
ィング法、イオンアシスト法など他の形成方法でもよ
い。In the above embodiment, the method of forming the multilayer film is a vacuum deposition method. However, the present invention is not limited to this, and another method such as an ion plating method or an ion assist method may be used.
【００３３】また、上記適用例では、多層膜をコールド
ミラーにおける可視光反射赤外線透過膜に適用した例に
ついて説明したが、これに限らず、例えばハロゲン電球
バルブの外面に形成され可視光を透過し赤外線をフィラ
メントに帰還させる可視光透過赤外線反射膜や特定波長
域の光を選択的に透過または反射させる干渉フィルタ膜
に適用してもよい。Further, in the above application example, an example in which the multilayer film is applied to a visible light reflecting infrared transmitting film in a cold mirror has been described. However, the present invention is not limited to this. The present invention may be applied to a visible light transmitting infrared reflecting film for returning infrared light to the filament or an interference filter film for selectively transmitting or reflecting light in a specific wavelength range.
【００３４】また、本発明は上記実施例に限定されるこ
となく、本発明の要旨を逸脱しない範囲において、種々
変形可能なことは勿論である。The present invention is not limited to the above-described embodiment, but can be variously modified without departing from the gist of the present invention.
【００３５】[0035]
【発明の効果】以上詳述したように、本発明の二酸化珪
素薄膜によれば、基板を被覆する低屈折率物質として金
属スズ０．５〜１０重量％含有の二酸化珪素を使用した
構成としたことにより、二酸化珪素自体の屈折率に変化
を与えることなく、耐久性を格段に向上することができ
る。As described in detail above, according to the silicon dioxide thin film of the present invention, a silicon dioxide containing 0.5 to 10% by weight of metal tin is used as a low refractive index substance for coating a substrate. Thereby, the durability can be significantly improved without changing the refractive index of silicon dioxide itself.
【００３６】また、コールドミラーやバンドパスフィル
タなどに必要とする光学的特性が得られ、コールドミラ
ーやバンドパスフィルタなどの光学的薄膜としても十分
適合することができる。Further, the optical characteristics required for a cold mirror, a band-pass filter and the like can be obtained, and the film can be adequately applied to an optical thin film such as a cold mirror and a band-pass filter.
【図１】本発明の一実施例のアルミ鏡からなる基板を示
す断面図である。FIG. 1 is a sectional view showing a substrate made of an aluminum mirror according to one embodiment of the present invention.
【図２】ＳｉＯ2 に添加するＳｎ混合比に対するＳｉＯ
2 薄膜の屈折率の変化を示す曲線図である。FIG. 2 shows the relationship between the mixing ratio of Sn added to SiO 2 and SiO
FIG. 4 is a curve diagram showing a change in refractive index of two thin films.
【図３】Ｓｎを添加したＳｉＯ2 薄膜の高温・高湿環境
に放置による最高反射率を示す曲線図である。FIG. 3 is a curve diagram showing the highest reflectance of a SiO 2 thin film to which Sn is added when left in a high-temperature and high-humidity environment.
【図４】ＳｎＯ2 を添加したＳｉＯ2 薄膜の高温・高湿
環境に放置による最高反射率を示す曲線図である。FIG. 4 is a curve diagram showing the maximum reflectance of a SiO 2 thin film to which SnO 2 is added when left in a high-temperature and high-humidity environment.
【図５】本発明を適用したコールドミラーを示す断面図
である。FIG. 5 is a sectional view showing a cold mirror to which the present invention is applied.
【図６】ＴｉＯ2 ／ＳｉＯ2 ＋Ｓｎ（Ｓｎ：３重量％）
交互層の分光透過率特性を示す曲線図である。FIG. 6: TiO 2 / SiO 2 + Sn (Sn: 3% by weight)
It is a curve diagram which shows the spectral transmittance characteristic of an alternating layer.
【図７】ＴｉＯ2 ／ＳｉＯ2 交互層の分光透過率特性を
示す曲線図である。FIG. 7 is a curve diagram showing spectral transmittance characteristics of a TiO 2 / SiO 2 alternate layer.
【図８】ＴｉＯ2 ／Ａｌ2 Ｏ3 交互層の分光透過率特性
を示す曲線図である。FIG. 8 is a curve diagram showing the spectral transmittance characteristics of the TiO 2 / Al 2 O 3 alternating layer.
【図９】表１乃至表３に示す膜構成の交互層に対するサ
ンシャインウェザーメータテストによる最高反射率を示
す曲線図である。FIG. 9 is a curve diagram showing the maximum reflectance of the alternating layers having the film configurations shown in Tables 1 to 3 by a sunshine weather meter test.
【図１０】従来のＳｉＯ2 保護膜とＡｌ2 Ｏ3 保護膜と
の高温・高湿時における最高反射率の変化を示す曲線図
である。FIG. 10 is a curve diagram showing a change in maximum reflectance of a conventional SiO 2 protective film and an Al 2 O 3 protective film at high temperature and high humidity.
1 …基板 2 …ＳｉＯ2 薄膜 3 …反射基板（基板） 6 …多層膜1… substrate 2… SiO 2 thin film 3… reflective substrate (substrate) 6… multilayer film
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.6，ＤＢ名) G02B 1/10 G02B 5/08 G02B 5/10──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 6 , DB name) G02B 1/10 G02B 5/08 G02B 5/10
Claims (1)
スズ０．５〜１０重量％含有の二酸化珪素を使用したこ
とを特徴とする二酸化珪素薄膜。1. A silicon dioxide thin film characterized in that silicon dioxide containing 0.5 to 10% by weight of metal tin is used as a low refractive index substance for coating a substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3251466A JP2754516B2 (en) | 1991-09-30 | 1991-09-30 | Silicon dioxide thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3251466A JP2754516B2 (en) | 1991-09-30 | 1991-09-30 | Silicon dioxide thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0588005A JPH0588005A (en) | 1993-04-09 |
| JP2754516B2 true JP2754516B2 (en) | 1998-05-20 |
Family
ID=17223238
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3251466A Expired - Lifetime JP2754516B2 (en) | 1991-09-30 | 1991-09-30 | Silicon dioxide thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2754516B2 (en) |
-
1991
- 1991-09-30 JP JP3251466A patent/JP2754516B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0588005A (en) | 1993-04-09 |
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