JPS634841A - Plasma treatment device - Google Patents
Plasma treatment deviceInfo
- Publication number
- JPS634841A JPS634841A JP14688286A JP14688286A JPS634841A JP S634841 A JPS634841 A JP S634841A JP 14688286 A JP14688286 A JP 14688286A JP 14688286 A JP14688286 A JP 14688286A JP S634841 A JPS634841 A JP S634841A
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- plasma
- electrode
- sputtering
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009832 plasma treatment Methods 0.000 title abstract 2
- 230000001678 irradiating effect Effects 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 abstract description 23
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052786 argon Inorganic materials 0.000 abstract description 3
- 239000002245 particle Substances 0.000 abstract description 3
- 230000005855 radiation Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 9
- 238000000034 method Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000005684 electric field Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J19/087—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、プラズマ処理技術、特に、プラズマを形成す
るための高周波電圧の印加技術に関し、例えば、半導体
装置の製造工程において、ウェハ上に金ｔｉｌ！形成等
の成膜処理を施すスパッタリング装置に利用して有効な
技術に関する。Detailed Description of the Invention [Field of Industrial Application] The present invention relates to plasma processing technology, particularly to technology for applying high frequency voltage to form plasma. Till! The present invention relates to a technique that is effective when used in a sputtering apparatus that performs film formation processing such as formation.
半導体装置の製造工程において、ウェハ上に金属膜を形
成するスパッタリング装置として、一対の電極間に高周
波電圧を印加してプラズマを形成するように構成されて
いるものがある。2. Description of the Related Art In the manufacturing process of semiconductor devices, some sputtering apparatuses for forming metal films on wafers are configured to apply a high frequency voltage between a pair of electrodes to form plasma.
なお、スパッタリング技術を述べである例としては、株
式会社工業調査会発行「ＩＣ実装化・技術」昭和５５年
１月１０日発行 Ｐ３７〜Ｐ４６、がある。An example of sputtering technology that describes the sputtering technology is "IC Mounting/Technology" published by Kogyo Research Association Co., Ltd., January 10, 1980, pages 37 to 46.
このような高ｍ波スパッタリング装置においては、電極
に印加する電力供給方式が有接点方式であるため、印加
周波数が低く抑えられ、ターゲット部に蓄積される自己
バイアス電荷密度に限界があり、スパッタリング効率の
向上に限界があるという問題点があることが、本発明者
によって明らかにされた。In such high m-wave sputtering equipment, the power supply method applied to the electrodes is a contact method, so the applied frequency is kept low, and there is a limit to the self-bias charge density accumulated in the target part, which reduces the sputtering efficiency. The inventor of the present invention has revealed that there is a problem in that there is a limit to the improvement of the performance.
本発明の目的は、処理効率を向上することができるプラ
ズマ処理技術を提供することにある。An object of the present invention is to provide a plasma processing technique that can improve processing efficiency.
本発明の前記ならびにその他の目的と新規な特徴は、本
明細書の記述および添付図面から明らかになるであろう
。The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.
本願において開示される発明のうち代表的なものの概要
を説明すれば、次の通りである。An overview of typical inventions disclosed in this application is as follows.
すなわち、少なくとも一方の電極にマイクロ波電磁波を
照射して電極に高周波電圧を印加することにより、一対
の電極間にプラズマを形成させるように構成したもので
ある。That is, the configuration is such that plasma is formed between a pair of electrodes by irradiating microwave electromagnetic waves to at least one electrode and applying a high frequency voltage to the electrode.
前記手段によれば、高周波電圧を無接点方式により電極
間に印加させることができるため、印加周波数をきわめ
て高く設定することかできる。According to the above means, since the high frequency voltage can be applied between the electrodes in a non-contact manner, the applied frequency can be set extremely high.
その結果、電極に発生する自己バイアス電荷密度が高め
られ、スパッタリング効率が向上されることになる。As a result, the self-bias charge density generated in the electrode is increased, and sputtering efficiency is improved.
第１図は本発明の一実施例であるスパッタリング装置を
示す縦断面図である。FIG. 1 is a longitudinal sectional view showing a sputtering apparatus which is an embodiment of the present invention.
本実施例において、このスパッタリング装置は処理室ｌ
を備えており、処理室１にはクライオポンプや油拡散ポ
ンプのような真空ポンプ等を備えている真空排気装置２
と、アルゴンガス等のような不活性ガスを供給するガス
供給装置３とがそれぞれ接続されている。また、処理室
ｌの外部にはプラズマモニタ４が窓部５を透視してプラ
ズマを監視し得るように設けられている。In this embodiment, this sputtering apparatus has a processing chamber l.
The processing chamber 1 is equipped with a vacuum exhaust device 2 equipped with a vacuum pump such as a cryopump or an oil diffusion pump.
and a gas supply device 3 that supplies an inert gas such as argon gas are connected to each other. Further, a plasma monitor 4 is provided outside the processing chamber 1 so as to be able to see through the window 5 and monitor the plasma.
処理室ｌ内には一対の電極６および７が上部および下部
にそれぞれ配されて絶縁体支持具８および９を介して支
持されており、画電極６．７は冷却部１０および１１に
よってそれぞれ冷却されるように構成されている。上側
の電極（以下、上電極という、）６は被処理物としての
ウェハ１２を主面を下に向けて保持し得るように構成さ
れている。下側の電極（以下、下電極という、）７はウ
ェハ１２上に被着させるべき金属膜等と同質の材料から
なるターゲット１３を保持し得るように構成されており
、下電極７の下にはマグネフト１４が磁界によって電子
を拘束するように設けられている。Inside the processing chamber l, a pair of electrodes 6 and 7 are arranged at the upper and lower parts, respectively, and are supported via insulator supports 8 and 9, and the picture electrodes 6 and 7 are cooled by cooling units 10 and 11, respectively. is configured to be The upper electrode (hereinafter referred to as upper electrode) 6 is configured to be able to hold a wafer 12 as an object to be processed with its main surface facing downward. The lower electrode (hereinafter referred to as the lower electrode) 7 is configured to hold a target 13 made of the same material as the metal film or the like to be deposited on the wafer 12. A magnetoft 14 is provided so that electrons are restrained by a magnetic field.
処理室１外には各導波路１５．１６がそれぞれ上下に配
されて開設されており、両溝波路１５．１６には上電極
６および下電極７がその一端部をそれぞれ突出されてい
る。上下の導波路１５．１６には各マイクロ波発生器（
以下、マグネトロンという、）１７．１８がマイクロ波
帯域の電磁波（以下、マイクロ波という、）を各電極６
．７にそれぞれ照射し得るように設けられており、両溝
波路１５．１６の途中には各絞り部１９．２０がマイク
ロ波を電極６．７に集中して照射させるようにそれぞれ
突設されている。Waveguides 15, 16 are provided outside the processing chamber 1, arranged one above the other, and an upper electrode 6 and a lower electrode 7 each protrude from one end of the two-groove waveguide 15, 16. Each microwave generator (
(hereinafter referred to as magnetron) 17 and 18 transmit electromagnetic waves in the microwave band (hereinafter referred to as microwave) to each electrode 6.
．． Each of the aperture parts 19.20 is provided in the middle of both groove wave paths 15.16 so as to irradiate the microwaves to the electrodes 6.7 in a concentrated manner. There is.
このスパッタリング装置はコンピュータ等からなるコン
トローラ２１を備えており、このコントローラ２１は与
えられる処理条件情報２２に基づいて真空排気装置２、
ガス供給装置３、マグネトロン１７．１８等を制御する
ように構成されている。This sputtering apparatus is equipped with a controller 21 consisting of a computer or the like, and this controller 21 controls the evacuation device 2, the evacuation device 2,
It is configured to control the gas supply device 3, magnetrons 17, 18, etc.
次に作用を説明する。Next, the effect will be explained.
下電極７に所定のターゲット１３が装着され、上電極６
に処理すべきウェハ１２がセットされた後、処理室ｌが
真空排気装置２により高真空に排気されると、ガス供給
装置３からアルゴンガス等が処理室１に供給される。A predetermined target 13 is attached to the lower electrode 7, and the upper electrode 6
After the wafer 12 to be processed is set, the processing chamber 1 is evacuated to a high vacuum by the evacuation device 2, and argon gas or the like is supplied to the processing chamber 1 from the gas supply device 3.
上下の電極６．７にはマグネトロン１７．１８により発
射されたマイクロ波が絞り部１９．２０により絞られて
導波路１５．１６を通じて集中的にそれぞれ照射される
。このマイクロ波の照射により上下電橋６．７間には高
周波電圧が高真空下で印加されるため、プラズマ２３が
形成されることになる。このとき、印加電力周波数は数
十ＭＨ２から数ＧＨｚと高く設定されている。The microwaves emitted by the magnetron 17.18 are condensed by the aperture section 19.20 and are intensively irradiated to the upper and lower electrodes 6.7 through the waveguide 15.16. Due to this microwave irradiation, a high frequency voltage is applied between the upper and lower electric bridges 6.7 under high vacuum, so that plasma 23 is formed. At this time, the applied power frequency is set to be as high as several tens of MHz to several GHz.
このプラズマ２３の励起によってターゲット１３がＸバ
ッタリングされ、被スパツタリング粒子がウェハ１２上
に被着される。その結果、ウェハ１２上には所望の金属
膜等が形成されることになる。The target 13 is X-buttered by the excitation of the plasma 23, and particles to be sputtered are deposited on the wafer 12. As a result, a desired metal film or the like is formed on the wafer 12.
この処理中、プラズマ２３の形成状況がモニタ４によっ
て監視され、この状況に基づいてコントローラ２１はウ
ェハ１２上に適正に成膜処理されるように、マグネトロ
ン１７．１８等を自動制御する。During this process, the formation status of the plasma 23 is monitored by the monitor 4, and based on this status, the controller 21 automatically controls the magnetrons 17, 18, etc. so that the film is properly formed on the wafer 12.
ところで、周波数が高くなると、質量が大きいアルゴン
原子は高周波電界の変化に追随することができなくなり
、ターゲット表面に電子が過剰に蓄積されるため、負に
直流自己バイアスされる。By the way, as the frequency increases, argon atoms with large mass cannot follow changes in the high-frequency electric field, and excessive electrons accumulate on the target surface, resulting in a negative DC self-bias.
そして、この自己バイアス電圧は周波数に比例して大き
くなる。This self-bias voltage increases in proportion to the frequency.
そこで、本発明はこの点に着目し、電極にマイクロ波を
印加することにより、印加周波数を数十ＭＨｚ〜数ＧＨ
ｚと高め、電極６．７に発生する自己バイアス電圧を向
上させ、もって、電荷密度を高めることにより、電子で
被スパツタリング粒子を効果的に飛び出させ、スパッタ
リング効率を高めるものとした。Therefore, the present invention focuses on this point, and by applying microwaves to the electrode, the applied frequency can be increased from several tens of MHz to several GHz.
By increasing the self-bias voltage generated in the electrodes 6 and 7, thereby increasing the charge density, particles to be sputtered are effectively ejected by electrons, and the sputtering efficiency is increased.
また、スパッタリング中に画電極６．７に作用する電界
をプラズマ２３をモニタリングして自動制御することに
より、ウェハ１２に作用するアルゴン原子のスパッタリ
ング方向（入射角度）を制御することができるため、ス
パッタリング処理量（エツチング量またはデボジシラン
量）を制御することができ、処理状態を均一化すること
ができ前記実施例によれば次の効果が得られる。Furthermore, by automatically controlling the electric field acting on the picture electrode 6.7 during sputtering by monitoring the plasma 23, the sputtering direction (incident angle) of argon atoms acting on the wafer 12 can be controlled. The processing amount (etching amount or devodisilane amount) can be controlled and the processing state can be made uniform, and the following effects can be obtained according to the above-mentioned embodiments.
＋１１ プラズマを形成するための電極にマイクロ波
を照射してきわめて高い高周波電圧を印加することによ
り、電極の自己バイアス電圧を高めることができるため
、電荷密度が高められることにより、スパッタリング効
率を高めることができる。+11 By irradiating the electrode for plasma formation with microwaves and applying an extremely high radio frequency voltage, the self-bias voltage of the electrode can be increased, which increases the charge density and thereby increases the sputtering efficiency. Can be done.
（２） スパッタリング効率を高めることにより、ス
パッタリング速度を向上させることができるため、生産
性を向上させることができる。(2) By increasing the sputtering efficiency, the sputtering speed can be improved, so productivity can be improved.
（３）スパッタリング中に画電極に作用する電界をプラ
ズマをモニタリングして自動制御することにより、スパ
ッタリング処理量を制御することができるため、処理厚
さ精度およびその均一性を高めることができる。(3) By monitoring the plasma and automatically controlling the electric field acting on the picture electrode during sputtering, it is possible to control the amount of sputtering processing, thereby improving the accuracy and uniformity of the processing thickness.
以上本発明者によってなされた発明を実施例に基づき具
体的に説明したが、本発明は前記実施例に限定されるも
のではなく、その要旨を逸脱しない範囲で種々変更可能
であることはいうまでもない。Although the invention made by the present inventor has been specifically explained above based on Examples, it goes without saying that the present invention is not limited to the Examples and can be modified in various ways without departing from the gist thereof. Nor.
例えば、マイクロ波は両方の電極に照射するように構成
するに限らず、−方の電極のみに照射するように構成し
てもよい。For example, the configuration is not limited to irradiating both electrodes with microwaves, but may be configured to irradiate only the negative electrode.
以上の説明では主として本発明者によってなされた発明
をその背景となった利用分野であるスパッタリングの成
膜処理に通用した場合について説明したが、それに限定
されるものではなく、スソタエッチング処理は勿論、プ
ラズマＣＶＤ処理やドライエツチング処理等にも通用す
ることができる。本発明は少なくとも、高周波電圧の印
加によりプラズマを形成せしめて処理を行うプラズマ処
理装置全般に通用することができるゆ
〔発明の効果〕
本願において開示される発明のうち代表的なものによっ
て得られる効果を簡単に説明すれば、次の通りである。In the above explanation, the invention made by the present inventor was mainly explained in the case where it was applied to the film forming process of sputtering, which is the background application field, but it is not limited to this, and of course it can be applied to the sputtering process , plasma CVD treatment, dry etching treatment, etc. The present invention can be applied at least to all plasma processing apparatuses that perform processing by forming plasma by applying a high-frequency voltage. [Effects of the Invention] Effects obtained by typical inventions disclosed in this application. A brief explanation is as follows.
プラズマを形成するための電極にマイクロ波を照射して
きわめて高い高周波電圧を印加することにより、電極の
自己バイアス電圧を高めて電荷密度を高めることができ
るため、プラズマ処理効率を高めることができる。By irradiating the electrode for plasma formation with microwaves and applying an extremely high radio frequency voltage, it is possible to increase the self-bias voltage of the electrode and increase the charge density, thereby increasing plasma processing efficiency.
第１図は本発明の一実施例であるスパッタリング装置を
示す縦断面図である。
１・・・処理室、２・・・真空排気装置、３ガス供給装
置、４・・・プラズマモニタ、５・・・窓部、６．７、
・・・電極、８．９・・・絶縁体支持具、１０．１１・
・・冷却部、１２・・・ウェハ（被処理物）、１３・・
・ターゲット、１４・・・マグネット、Ｉ５．１Ｇ・・
・導波路、１７．１８・・・マグネトロン、１９．２０
・・・絞り部、２１・・・コントローラ、２２・・・処
理条件情報、２３・・・プラズマ。
、−へ
代理人 弁理士 小川勝馬゛１、FIG. 1 is a longitudinal sectional view showing a sputtering apparatus which is an embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Processing chamber, 2... Vacuum exhaust device, 3... Gas supply device, 4... Plasma monitor, 5... Window part, 6.7,
... Electrode, 8.9 ... Insulator support, 10.11.
...Cooling section, 12...Wafer (workpiece), 13...
・Target, 14...Magnet, I5.1G...
・Waveguide, 17.18...Magnetron, 19.20
... Aperture section, 21... Controller, 22... Processing condition information, 23... Plasma. , -Representative Patent Attorney Katsuma Ogawa゛1,
Claims (1)
て電極に高周波電圧を印加することにより、一対の電極
間にプラズマを形成させるように構成されていることを
特徴とするプラズマ処理装置。 ２、マイクロ波電磁波が、一対の電極の両方に照射され
るように構成されていることを特徴とする特許請求の範
囲第１項記載のプラズマ処理装置。[Claims] 1. The device is characterized in that it is configured to form plasma between a pair of electrodes by irradiating microwave electromagnetic waves to at least one electrode and applying a high frequency voltage to the electrodes. Plasma processing equipment. 2. The plasma processing apparatus according to claim 1, wherein the plasma processing apparatus is configured such that the microwave electromagnetic waves are irradiated to both of the pair of electrodes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14688286A JPS634841A (en) | 1986-06-25 | 1986-06-25 | Plasma treatment device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14688286A JPS634841A (en) | 1986-06-25 | 1986-06-25 | Plasma treatment device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS634841A true JPS634841A (en) | 1988-01-09 |
Family
ID=15417704
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14688286A Pending JPS634841A (en) | 1986-06-25 | 1986-06-25 | Plasma treatment device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS634841A (en) |
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| US20070205096A1 (en) * | 2006-03-06 | 2007-09-06 | Makoto Nagashima | Magnetron based wafer processing |
| DE112006002443T5 (en) | 2005-09-14 | 2008-07-10 | Asahi Kasei Chemicals Corporation | Block copolymer and process for producing a shrink film |
| WO2008123240A1 (en) | 2007-03-26 | 2008-10-16 | Asahi Kasei Chemicals Corporation | Thermoplastic composition and molded article produced from the same |
| WO2009128397A1 (en) | 2008-04-14 | 2009-10-22 | 旭化成ケミカルズ株式会社 | Adhesive composition |
| WO2009133930A1 (en) | 2008-04-30 | 2009-11-05 | 旭化成イーマテリアルズ株式会社 | Resin composition and sheet using the same |
| WO2010067564A1 (en) | 2008-12-10 | 2010-06-17 | 旭化成ケミカルズ株式会社 | Thermoplastic elastomer composition |
| WO2010073589A1 (en) | 2008-12-22 | 2010-07-01 | 旭化成ケミカルズ株式会社 | Crosslinkable and foamable composition, crosslinked foamed object, and shoe midsole comprising same |
| US7794807B2 (en) | 2004-09-07 | 2010-09-14 | Denki Kagaku Kogyo Kabushiki Kaisha | Conductive composite sheeting |
| WO2011040312A1 (en) | 2009-10-02 | 2011-04-07 | 旭化成ケミカルズ株式会社 | Production method for modified conjugated diene polymer, modified conjugated diene polymer, and modified conjugated diene polymer composition |
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-
1986
- 1986-06-25 JP JP14688286A patent/JPS634841A/en active Pending
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