JPS634075A - 無電解メツキ用シ−ドの形成方法 - Google Patents

無電解メツキ用シ−ドの形成方法

Info

Publication number
JPS634075A
JPS634075A JP62110909A JP11090987A JPS634075A JP S634075 A JPS634075 A JP S634075A JP 62110909 A JP62110909 A JP 62110909A JP 11090987 A JP11090987 A JP 11090987A JP S634075 A JPS634075 A JP S634075A
Authority
JP
Japan
Prior art keywords
substrate
palladium
noble metal
polymer
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62110909A
Other languages
English (en)
Other versions
JPH022949B2 (ja
Inventor
ロバート・ロイド・ジヤクソン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS634075A publication Critical patent/JPS634075A/ja
Publication of JPH022949B2 publication Critical patent/JPH022949B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1603—Process or apparatus coating on selected surface areas
    • C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
    • C23C18/1608—Process or apparatus coating on selected surface areas by direct patterning from pretreatment step, i.e. selective pre-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1603—Process or apparatus coating on selected surface areas
    • C23C18/1605—Process or apparatus coating on selected surface areas by masking
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
    • C23C18/1862—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by radiant energy
    • C23C18/1865—Heat
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
    • C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
    • C23C18/1875—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment only one step pretreatment
    • C23C18/1879—Use of metal, e.g. activation, sensitisation with noble metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
    • C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
    • C23C18/1886—Multistep pretreatment
    • C23C18/1893—Multistep pretreatment with use of organic or inorganic compounds other than metals, first
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • C23C18/2006—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • C23C18/2006—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30
    • C23C18/2026—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30 by radiant energy
    • C23C18/2033—Heat
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • C23C18/2006—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30
    • C23C18/2046—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30 by chemical pretreatment
    • C23C18/2053—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30 by chemical pretreatment only one step pretreatment
    • C23C18/206—Use of metal other than noble metals and tin, e.g. activation, sensitisation with metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • C23C18/2006—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30
    • C23C18/2046—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30 by chemical pretreatment
    • C23C18/2053—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30 by chemical pretreatment only one step pretreatment
    • C23C18/2066—Use of organic or inorganic compounds other than metals, e.g. activation, sensitisation with polymers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • C23C18/2006—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30
    • C23C18/2046—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30 by chemical pretreatment
    • C23C18/2073—Multistep pretreatment
    • C23C18/2086—Multistep pretreatment with use of organic or inorganic compounds other than metals, first
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • C23C18/28—Sensitising or activating
    • C23C18/30—Activating or accelerating or sensitising with palladium or other noble metal
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/38—Coating with copper
    • C23C18/40—Coating with copper using reducing agents
    • C23C18/405—Formaldehyde
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
    • H05K3/182—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
    • H05K3/184—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method using masks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemically Coating (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 Ａ、産業上の利用分野 この発明は、基板に無電解メッキ法により金属メッキが
できるように、基板上に貴金属のシートを付着させる方
法に関するものである。
Ｂ、従来技術 米国特許第４５１．７２５４号明細書には、ポリイミド
の接着メタライゼーションの方法が開示されている。こ
れには、ポリエチレンイミンは、ポリイミドの前処理の
ために、水酸化アルカリの水溶液として用いられる多数
の窒素化合物のうちの１つであることが示されている。
Ｃ１発明が解決しようとする問題点 この発明の目的は、基板上に貴金属シートを付着させ、
強固に結合させる方法を提供することにある。
Ｄ４問題点を解決するための手段 この発明によれば、貴金属化合物と錯体を生成する能力
のある重合体の薄Ｍで基板をコーティングする。この薄
層は厚みが１ミクロン未満であることが好ましい。適当
な重合体には、ポリアミン、ポリ酸、およびポリ酸の塩
が含まれる。錯体を生成する重合体層は、好ましくは、
溶液によるデイツプ・コーティング、スプレィ・コーテ
ィング、またはスピン・コーティング、もしくはプラズ
マ付着等の非溶液法によりコーティングする。シーディ
ングは、重合体と、無電解メッキの触媒作用を有する、
またはこのような触媒に変換されることのできる貴金属
化合物との錯体を形成することにより行う。重合体は、
貴金属化合物を基板に強固に結合させる作用を有する。
好ましい貴金属化合物には、塩化パラジウム（■）、硫
酸パラジウム（ＩＩ）等の水溶性の塩、酢酸パラジウム
（ＩＩ）等の有機溶媒溶性の化合物、パラジウムアセチ
ルアセトネート等の揮発性錯体が含まれる。銅、ニッケ
ル、金、プラチナ、銀等の他の金属も使用できる。貴金
属化合物と、錯体生成重合体との錯体は、貴金属化合物
を重合体の溶液に添加して、この溶液を基板に塗布する
か、重合体を基板表面に塗布した後、別工程として貴金
属化合物を塗布するかの方法により形成させることがで
きる。貴金属化合物を別に塗布するには、好ましくは貴
金属化合物の溶液を、デイツプ・コーティング、スプレ
ィ・コーティング、またはスピン・コーティングにより
、もしくは化合物の蒸気に基板を露出させることにより
行う、過剰の貴金属化合物は、水または溶剤で洗浄する
ことにより、または揮発性貴金属化合物の場合は排気に
より除去することができる。次に、必要があれば、貴金
属化合物は、露光、加熱、プラズマへの露出、または還
元剤処理等、多くの方法で活性化させることができる。
場合により、活性化は不必要である。基板のメタライゼ
ーションは、基板を銅およびニッケル・メッキに用いる
コモン・バス等の無電解メッキ浴中に浸漬して行う。
基板の選択的メタライゼーションは、フォトレジストを
使用して行う、これは、薄い錯体生成重合体の層で基板
をコーティングした後、フォトレジストで基板をコーテ
ィングし、これをパターンに従って露光し、現像して、
メタライズされる区域を画定する。錯体生成重合体は、
露光および現像により露出されるが、侵食されることは
ない。
次に基板全体を貴金属化合物でコーティングする。
化合物はレジストの現像により露出された錯体生成重合
体と結合するが、フォトレジストとは結合しない。した
がって化合物は水または溶剤で洗浄することにより、ま
たは揮発性貴金属化合物の場合は排気により、レジスト
から除去することができる。代替方法として、貴金属化
合物と、錯体生成重合体との錯体を、フォトレジストの
塗布の前に、貴金属化合物と錯体生成重合体との単一溶
液を塗布するか、これらを別個に塗布するかにより形成
させることができる。このように、錯体生成重合体層は
、貴金属化合物と基板を結合させるだけでなく、電気解
メッキによりメタライズする基板の選択した区域を画定
する作用を有する。次に、必要があれば貴金属化合物を
活性化させ、基板を無電解メッキ浴中でメタライズする
。
この発明の方法は特に電子パッケージング基板、特に永
久レジスト、すなわち回路ラインを画定するだけでなく
、誘電体の一部として基板上に残るレジストをコーティ
ングした回路板に適用される。
現在、永久レジストを用いて製造した印刷回路板の、パ
ターン化した無電解メッキは、通常の方法では行うこと
ができない。通常、パラジウム等の貴金属の粒子からな
るシーブをレジストの下に付着させる。レジストを露出
して回路のチャネルを画定し、基板を無電解メッキに浸
漬して回路を形成する。メッキおよびレジストはく難役
、浴から過剰のシーブを除去する。レジストが回路板の
一部として残ると、これらの金属粒子も回路板中に残り
、短絡の通路の作用をする。この発明は、レジストを露
出、現像した後、回路チャネルの下面のみにシートを付
着させる事により、永久レジストを使用して基板に回路
を形成する方法を与える。
下記の例は、この発明を実施するための好ましい方法を
説明するものである。
Ｅ、実施例 ■上 清浄な回路板の基板を、分子量が１０００００Ｏのポリ
アクリル酸の０．０５重合％溶液でデイツプ・コーティ
ングした。基板を室温および最終的に１００℃で乾燥し
た後、永久レジストでコーティングし、露出して、１．
１．１−トリクロロエタンでスプレィ現像を行った。こ
の後、基板を水酸化ナトリウムの１重量％水溶液に浸漬
し、脱イオン水で清浄し、硫酸パラジウム（ＩＩ）　％
２重量％水溶液に浸漬した後、再び脱イオン水で洗浄し
た。次にパラジウム（ＩＩ）を金属パラジウムに予め還
元せずに、銅の無電解メッキを行った。メッキは、銅２
．５ｇ／Ｑ、ＥＤＴＡ４０ｇ／Ｑ、ホルムアルデヒド０
．５ｇ／ｕを含む（定常状態の）無電解銅メッキ浴で、
ｐＨ１１，７、温度７０〜７５℃で操作して行った。銅
が所要の部分に、選択的に均一に付着した。
匠ｌ 清浄な回路板の基板を、分子量が３２５０００のポリア
クリル酸ナトリウムの２．６重量％溶液でデイツプ・コ
ーティングした。この基板を室温および量的的に１００
℃で乾燥した後、重版の乾燥皮膜回路板レジストでコー
ティングし、露出して、１．１．１−トリクロロエタン
でスプレィ現像した。次に基板をＰｄＣＱ２２重量％、
ＮａＣＱｌ、３重量％を含有する水溶液に浸漬した。過
剰のＰｄ（１２□／　Ｎ　ａ　ＣＱをすすぎ流した後、
パラジウム（ＩＩ）を金属パラジウムに予め還元せずに
、例１で述べた無電解銅メッキ浴で、無電解メッキを行
った。銅は所要の部分に、選択的に均一に付着した。銅
の付着が完了した後、レジストをジクロロメタンで除去
し、基板を高温の脱イオン水で洗浄し、過剰のポリアク
リル酸ナトリウムを除去した。
亘ユ 清浄なセラミックのパッケージング基板を、分子量が３
２５０００のポリアクリル酸ナトリウムを２．０重量％
、Ｐｄ５Ｏ，を２重量％含有する水溶液でスピン・コー
ティングした。この基板を１００℃で乾燥した。乾燥し
た基板にレジストをコーティングし、露出、現像した。
次にパラジウム（ＩＩ）を金属パラジウムに予め還元せ
ずに、例１で述べた無電解銅メッキ浴で、基板に銅の無
電解メッキを行った。付着の選択性および均一性は良好
であった。銅の付着が完了した後、レジストを除去し、
基板を高温の脱イオン水で洗浄し、過剰のポリアクリル
酸ナトリウムとＰｄＳＯ４を除去した。
■± 清浄な回路板の基板を、分子量１２．００のポリエチレ
ンイミンの２重量％水溶液でデイツプ・コーティングし
た。次にこの基板を、永久レジストでコーティング、露
出した後、１．１．１−トリクロロエタンでスプレィ現
像した。次に、塩化パラジウム（ＩＩ）およびＨＣＱを
含有する水溶液に基板を浸漬した。これには液化パラジ
ウム（ＩＩ）の２．５重量％溶液を使用した。活性の強
い無電解銅メッキ浴を使用した場合は、わずか０．３重
量％の塩化パラジウム（ＩＩ）溶液で十分であった。
いずれの場合も、水溶液中のＨＣＱのモル濃度は、塩化
パラジウム（ＩＩ）のモル濃度の約２倍とした。
水洗により結合しない塩化パラジウｌ、（ｌを除去した
後、基板をｐＨ１２，８で、０．２Ｍのホルムアルデヒ
ド水溶液に浸漬して、パラジウム（ＩＩ）を金属パラジ
ウムに還元した。次に基板に無電解鋼メッキを行った。
高濃度の塩化パラジウム（ＩＩ）浴でシーディングした
基板は、例１で述べた無電解銅メッキ浴でメッキした。
低濃度の塩化パラジウム（ＩＩ）浴でシーディングした
基板は、銅２．５ｇ／Ｑおよびホルムアルデヒド５．５
ｇ／２を含有する水性無電解銅メッキ浴で、ｐＨ１２，
８、温度２３℃でメッキを行った。いずれの無電解銅付
着浴でも、この方法により良好な選択性が得られた。銅
は、レジストを除去した部分に均一に付着したが、レジ
ストの表面には付着しなかった。
例１〜３で示したように、場合によっては還元工程は不
要である。これは、はとんどのメッキ浴で、　Ｐｄ　（
ＩＩ）が無電解銅付着の活性開始剤であるためである。
これは、これらの浴に含有される塩基性のホルムアルデ
ヒドが、パラジウム（ＩＩ）を急速に還元して金属パラ
ジウムとするためである。
Ｆ０発明の効果 この方法は、特に永久レジストを用いて製造する回路板
の場合、通常のシーディング法に比較して多くの利点を
有する。この方法によれば、金属も電解質も誘電体内に
取り込まれることはない。
これは、レジストの下には重合体材料しかないためであ
る。重合体は、誘合体層どうし、および誘電体層と銅の
ラインとの接着を高めるためのものを選択することがで
き、これにより、回路板全体の品質が改善される。この
方法はアスペクト比の高い孔のメッキにも応用すること
ができる。これは、重合体のコーティングが、孔の表面
にも基板の表面にも行うことができるためである。
この発明は、従来の貴金属粒子のシーズと比較しても利
点を有する。従来のシーズはコロイドとして付着させ、
したがって粒子の大きな固まりを形成することがあり、
これが量的のメッキされたコーティングに欠陥を生ずる
原因となった。また、コロイド状のシーズは、再現が困
難であることがある。この明細書に述べる方法では、貴
金属シープは、単相溶液、または蒸気として付着させる
ため、コロイド状シーダの塗布または調製に固有の問題
が除かれる。従来のシーズはまた、無電解金属メッキの
直前に、金属粒子の表面から酸化物を除去する促進工程
を必要とする。促進の後、酸化物が再び形成する前に、
基板をメッキしなければならない。この明細書に述べる
方法では、シーズは酸化物のコーティングで覆われるこ
とがないため、促進剤は不要である。この結果、シーデ
ィングした基板は、再活性化、または促進させることな
く、メッキ前にいつまでも放置することができる。
出願人　　インターナショナル・ビジネス・マシーンズ
・コーポレーション 代理人　　弁理士　　山　　本　　仁　　朗（外１名）

Claims (5)

    【特許請求の範囲】
  1. （１）（ａ）基板を、貴金属化合物と錯体を形成し得る
    重合体の層で被覆し、 （ｂ）上記重合体の層を、該重合体と形成し得る貴金属
    化合物と接触させる工程を有する、 無電解メッキ用シートの形成方法。
  2. （２）上記重合体の層の厚さが１μｍ以下である特許請
    求の範囲第（１）項記載の方法。
  3. （３）上記重合体がポリアミンである特許請求の範囲第
    （１）項記載の方法。
  4. （４）上記重合体がポリ酸またはポリ酸塩である特許請
    求の範囲第（１）項記載の方法。
  5. （５）上記貴金属化合物が、塩化パラジウム（II）、硫
    酸パラジウム（II）またはパラジウム・アセチルアセト
    ネートである特許請求の範囲第（１）項記載の方法。
JP62110909A 1986-06-16 1987-05-08 無電解メツキ用シ−ドの形成方法 Granted JPS634075A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US874976 1978-02-03
US06/874,976 US4701351A (en) 1986-06-16 1986-06-16 Seeding process for electroless metal deposition

Publications (2)

Publication Number Publication Date
JPS634075A true JPS634075A (ja) 1988-01-09
JPH022949B2 JPH022949B2 (ja) 1990-01-19

Family

ID=25364999

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62110909A Granted JPS634075A (ja) 1986-06-16 1987-05-08 無電解メツキ用シ−ドの形成方法

Country Status (3)

Country Link
US (1) US4701351A (ja)
EP (1) EP0250867A1 (ja)
JP (1) JPS634075A (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06279602A (ja) * 1993-03-26 1994-10-04 Idemitsu Petrochem Co Ltd 無電解めっき可能なポリオレフィン樹脂成形体
JP2006518103A (ja) * 2003-02-17 2006-08-03 アルシメール・エス・アー 表面被覆方法、及び該方法を使用するマイクロエレクトロニクス相互接続の作製、並びに集積回路
JP2007112112A (ja) * 2005-09-20 2007-05-10 Dainippon Ink & Chem Inc 金属積層板及び金属積層板の製造方法
WO2008012984A1 (fr) * 2006-07-27 2008-01-31 Ebara-Udylite Co., Ltd. Procédé de métallisation de surfaces en plastique
JP2010171045A (ja) * 2009-01-20 2010-08-05 Konica Minolta Ij Technologies Inc インクジェットインク及び金属パターン形成方法
JP2013525606A (ja) * 2010-04-19 2013-06-20 ペガステク 銅層を用いた非金属材料からなる基板の表面を被覆する方法

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8602331D0 (en) * 1986-01-30 1986-03-05 Ici Plc Multilayer systems
US5389496A (en) * 1987-03-06 1995-02-14 Rohm And Haas Company Processes and compositions for electroless metallization
US4948707A (en) * 1988-02-16 1990-08-14 International Business Machines Corporation Conditioning a non-conductive substrate for subsequent selective deposition of a metal thereon
US4868253A (en) * 1988-04-19 1989-09-19 International Business Machines Corporation β-diketone-polymer reaction product
US4994349A (en) * 1988-06-27 1991-02-19 At&T Bell Laboratories Printed wiring board fabrication method
US6210862B1 (en) 1989-03-03 2001-04-03 International Business Machines Corporation Composition for photoimaging
US5192581A (en) * 1989-08-10 1993-03-09 Microelectronics And Computer Technology Corporation Protective layer for preventing electroless deposition on a dielectric
US5084299A (en) * 1989-08-10 1992-01-28 Microelectronics And Computer Technology Corporation Method for patterning electroless plated metal on a polymer substrate
US4981715A (en) * 1989-08-10 1991-01-01 Microelectronics And Computer Technology Corporation Method of patterning electroless plated metal on a polymer substrate
NL8902886A (nl) * 1989-11-22 1991-06-17 Akzo Nv Laminaat ten behoeve van stroomloze metallisering alsmede een daarvan voorziene gedrukte schakeling en een werkwijze ter vervaardiging van een dergelijk laminaat.
US5082734A (en) * 1989-12-21 1992-01-21 Monsanto Company Catalytic, water-soluble polymeric films for metal coatings
ATE172755T1 (de) * 1989-12-21 1998-11-15 Amesbury Group Inc Katalytischer wasserlöslicher polymerer film für metallbeschichtungen
JPH0775789B2 (ja) * 1990-06-14 1995-08-16 インターナショナル・ビジネス・マシーンズ・コーポレイション 化学ハンダおよびそれを用いる結合方法
US5091339A (en) * 1990-07-23 1992-02-25 Microelectronics And Computer Technology Corporation Trenching techniques for forming vias and channels in multilayer electrical interconnects
DE4036591A1 (de) * 1990-11-16 1992-05-21 Bayer Ag Primer zum metallisieren von substratoberflaechen
US5153023A (en) * 1990-12-03 1992-10-06 Xerox Corporation Process for catalysis of electroless metal plating on plastic
US5112434A (en) * 1991-03-20 1992-05-12 Shipley Company Inc. Method for patterning electroless metal on a substrate followed by reactive ion etching
JPH05202483A (ja) * 1991-04-25 1993-08-10 Shipley Co Inc 無電解金属化方法と組成物
US5830533A (en) * 1991-05-28 1998-11-03 Microelectronics And Computer Technology Corporation Selective patterning of metallization on a dielectric substrate
US5310580A (en) * 1992-04-27 1994-05-10 International Business Machines Corporation Electroless metal adhesion to organic dielectric material with phase separated morphology
US5380560A (en) * 1992-07-28 1995-01-10 International Business Machines Corporation Palladium sulfate solution for the selective seeding of the metal interconnections on polyimide dielectrics for electroless metal deposition
US5380546A (en) * 1993-06-09 1995-01-10 Microelectronics And Computer Technology Corporation Multilevel metallization process for electronic components
BE1007879A3 (fr) * 1994-01-05 1995-11-07 Blue Chips Holding Resine polymerique a viscosite ajustable pour le depot de palladium catalytique sur un substrat, son procede de preparation et son utilisation.
US5545510A (en) * 1995-03-28 1996-08-13 Mac Dermid, Inc. Photodefinable dielectric composition useful in the manufacture of printed circuits
US6141870A (en) 1997-08-04 2000-11-07 Peter K. Trzyna Method for making electrical device
US6680440B1 (en) 1998-02-23 2004-01-20 International Business Machines Corporation Circuitized structures produced by the methods of electroless plating
US6066889A (en) 1998-09-22 2000-05-23 International Business Machines Corporation Methods of selectively filling apertures
US6204456B1 (en) 1998-09-24 2001-03-20 International Business Machines Corporation Filling open through holes in a multilayer board
US7862860B2 (en) * 2001-11-29 2011-01-04 International Business Machines Corporation Materials and methods for immobilization of catalysts on surfaces and for selective electroless metallization
DE10164671A1 (de) * 2001-12-27 2003-07-10 Basf Ag Derivate von Polymeren für die Metallbehandlung
US6875691B2 (en) * 2002-06-21 2005-04-05 Mattson Technology, Inc. Temperature control sequence of electroless plating baths
US6900126B2 (en) 2002-11-20 2005-05-31 International Business Machines Corporation Method of forming metallized pattern
US6797312B2 (en) * 2003-01-21 2004-09-28 Mattson Technology, Inc. Electroless plating solution and process
FR2851181B1 (fr) * 2003-02-17 2006-05-26 Commissariat Energie Atomique Procede de revetement d'une surface
KR100953612B1 (ko) * 2003-06-02 2010-04-20 삼성에스디아이 주식회사 생체물질 고정용 기판 및 이의 제조방법
FR2868085B1 (fr) * 2004-03-24 2006-07-14 Alchimer Sa Procede de revetement selectif d'une surface composite, fabrication d'interconnexions en microelectronique utilisant ce procede, et circuits integres
US7820026B2 (en) * 2005-04-13 2010-10-26 Applied Materials, Inc. Method to deposit organic grafted film on barrier layer
TWI361208B (en) * 2007-08-07 2012-04-01 Univ Nat Defense Process for forming a metal pattern on a substrate
US8383243B2 (en) * 2008-12-10 2013-02-26 Xerox Corporation Composite containing polymer, filler and metal plating catalyst, method of making same, and article manufactured therefrom
WO2010116291A2 (en) 2009-04-08 2010-10-14 International Business Machines Corporation Optical waveguide with embedded light-reflecting feature and method for fabricating the same
US8703602B2 (en) * 2010-12-02 2014-04-22 Qualcomm Incorporated Selective seed layer treatment for feature plating
JP6141312B2 (ja) * 2011-12-16 2017-06-07 コモンウェルス サイエンティフィック アンド インダストリアル リサーチ オーガニゼーション 塗装系
US9268223B2 (en) 2013-11-20 2016-02-23 Eastman Kodak Company Forming conductive metal pattern using reactive polymers
US9228039B2 (en) 2013-11-20 2016-01-05 Eastman Kodak Company Crosslinkable reactive polymers
US9329481B2 (en) 2013-11-20 2016-05-03 Eastman Kodak Company Electroless plating method using halide
US9316914B2 (en) 2013-11-20 2016-04-19 Eastman Kodak Company Electroless plating method using non-reducing agent
US9081281B2 (en) 2013-11-20 2015-07-14 Eastman Kodak Company Electroless plating method
US10253414B2 (en) * 2014-09-30 2019-04-09 Tokyo Electron Limited Liquid phase atomic layer deposition
FR3042133B1 (fr) * 2015-10-08 2022-02-11 Aveni Procede de greffage de film mince polymerique sur substrat et procede de metallisation de ce film mince
WO2017214633A1 (en) * 2016-06-10 2017-12-14 University Of Washington Chalcogen copolymers
WO2019206682A1 (en) 2018-04-24 2019-10-31 CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement Method of metal plating of polymer-containing substrates

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3560257A (en) * 1967-01-03 1971-02-02 Kollmorgen Photocircuits Metallization of insulating substrates
DE2116389C3 (de) * 1971-03-30 1980-04-03 Schering Ag, 1000 Berlin Und 4619 Bergkamen Lösung zur Aktivierung von Oberflächen für die Metallisierung
CA1053994A (en) * 1974-07-03 1979-05-08 Amp Incorporated Sensitization of polyimide polymer for electroless metal deposition
US4388351A (en) * 1979-08-20 1983-06-14 Western Electric Company, Inc. Methods of forming a patterned metal film on a support
DE3149919A1 (de) * 1981-12-11 1983-06-23 Schering Ag, 1000 Berlin Und 4619 Bergkamen Verfahren zum haftfesten metallisieren von polyimid
DE3150985A1 (de) * 1981-12-23 1983-06-30 Bayer Ag, 5090 Leverkusen Verfahren zur aktivierung von substratoberflaechen fuer die stromlose metallisierung
PH23907A (en) * 1983-09-28 1989-12-18 Rohm & Haas Catalytic process and systems

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06279602A (ja) * 1993-03-26 1994-10-04 Idemitsu Petrochem Co Ltd 無電解めっき可能なポリオレフィン樹脂成形体
JP2006518103A (ja) * 2003-02-17 2006-08-03 アルシメール・エス・アー 表面被覆方法、及び該方法を使用するマイクロエレクトロニクス相互接続の作製、並びに集積回路
JP2007112112A (ja) * 2005-09-20 2007-05-10 Dainippon Ink & Chem Inc 金属積層板及び金属積層板の製造方法
WO2008012984A1 (fr) * 2006-07-27 2008-01-31 Ebara-Udylite Co., Ltd. Procédé de métallisation de surfaces en plastique
JP2010171045A (ja) * 2009-01-20 2010-08-05 Konica Minolta Ij Technologies Inc インクジェットインク及び金属パターン形成方法
JP2013525606A (ja) * 2010-04-19 2013-06-20 ペガステク 銅層を用いた非金属材料からなる基板の表面を被覆する方法

Also Published As

Publication number Publication date
EP0250867A1 (en) 1988-01-07
JPH022949B2 (ja) 1990-01-19
US4701351A (en) 1987-10-20

Similar Documents

Publication Publication Date Title
JPS634075A (ja) 無電解メツキ用シ−ドの形成方法
US4554182A (en) Method for conditioning a surface of a dielectric substrate for electroless plating
JP2768390B2 (ja) 無電解金属付着のために基体をコンディショニングする方法
US6017613A (en) Method for photoselective seeding and metallization of three-dimensional materials
US5380560A (en) Palladium sulfate solution for the selective seeding of the metal interconnections on polyimide dielectrics for electroless metal deposition
US3959547A (en) Process for the formation of real images and products produced thereby
JPS6321752B2 (ja)
US5989653A (en) Process for metallization of a substrate by irradiative curing of a catalyst applied thereto
JP2002252445A (ja) 印刷配線板の製造方法
JP2007017921A (ja) プリント配線基盤とその製造方法
JPH10507229A (ja) 連結された金属構造の層を電気的に非伝導性の表面に形成するための方法
JP2004019003A (ja) プリント回路基板及びそのメッキ方法
US20050238812A1 (en) Method for electroless metalisation of polymer substrate
TW200403290A (en) Method for electroless metalisation of polymer substrate
EP0163089B1 (en) Process for activating a substrate for electroless deposition of a conductive metal
JPH01225390A (ja) 電気伝導性板の製造法
US3839083A (en) Selective metallization process
US6635410B2 (en) Metallizing method for dielectrics
JPS638637B2 (ja)
JPH03173196A (ja) 無電解金属化用のラミネートおよびこれから作られたプリント回路および該ラミネートの製造法
EP0139233B1 (en) Method for conditioning a surface of a dielectric substrate for electroless plating
JP2006526889A (ja) ポリマー支持体材料およびセラミック支持体材料の構造化された金属被覆の方法、および当該方法に用いられる活性化可能な化合物
JPH0677626A (ja) めっき回路形成方法
JPH0480374A (ja) プリント配線板の製造方法
JPH0147910B2 (ja)