JPS6335083B2 - - Google Patents

Info

Publication number: JPS6335083B2
Authority: JP; Japan
Prior art keywords: electrode; semiconductor ceramic; barium titanate; alloy; resistance
Prior art date: 1981-11-13
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

JP56182849A

Other languages

English (en)

Japanese (ja)

Other versions

JPS5884402A (ja

Inventor

Takashi Kobayashi

Motoi Nishii

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Murata Manufacturing Co Ltd

Original Assignee

Murata Manufacturing Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1981-11-13

Filing date

1981-11-13

Publication date

1988-07-13

1981-11-13 Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd

1981-11-13 Priority to JP18284981A priority Critical patent/JPS5884402A/ja

1983-05-20 Publication of JPS5884402A publication Critical patent/JPS5884402A/ja

1988-07-13 Publication of JPS6335083B2 publication Critical patent/JPS6335083B2/ja

Status Granted legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 claims description 18
239000000919 ceramic Substances 0.000 claims description 15
JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 12
229910002113 barium titanate Inorganic materials 0.000 claims description 12
229910000881 Cu alloy Inorganic materials 0.000 claims description 7
YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 claims description 6
229910000807 Ga alloy Inorganic materials 0.000 description 8
PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
238000010586 diagram Methods 0.000 description 4
229910052759 nickel Inorganic materials 0.000 description 3
229910052573 porcelain Inorganic materials 0.000 description 3
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
239000002390 adhesive tape Substances 0.000 description 2
229910045601 alloy Inorganic materials 0.000 description 2
239000000956 alloy Substances 0.000 description 2
229910052802 copper Inorganic materials 0.000 description 2
239000010949 copper Substances 0.000 description 2
238000010438 heat treatment Methods 0.000 description 2
239000000203 mixture Substances 0.000 description 2
238000004544 sputter deposition Methods 0.000 description 2
229910052786 argon Inorganic materials 0.000 description 1
230000015572 biosynthetic process Effects 0.000 description 1
230000000052 comparative effect Effects 0.000 description 1
230000000694 effects Effects 0.000 description 1
238000007772 electroless plating Methods 0.000 description 1
238000005530 etching Methods 0.000 description 1
230000001747 exhibiting effect Effects 0.000 description 1
239000007789 gas Substances 0.000 description 1
229910052745 lead Inorganic materials 0.000 description 1
238000007747 plating Methods 0.000 description 1
229910052709 silver Inorganic materials 0.000 description 1
239000004332 silver Substances 0.000 description 1
229910052725 zinc Inorganic materials 0.000 description 1

Landscapes

Conductive Materials (AREA)
Details Of Resistors (AREA)
Thermistors And Varistors (AREA)

JP18284981A 1981-11-13 1981-11-13 チタン酸バリウム系半導体磁器素子 Granted JPS5884402A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP18284981A JPS5884402A (ja)	1981-11-13	1981-11-13	チタン酸バリウム系半導体磁器素子

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP18284981A JPS5884402A (ja)	1981-11-13	1981-11-13	チタン酸バリウム系半導体磁器素子

Publications (2)

Publication Number	Publication Date
JPS5884402A JPS5884402A (ja)	1983-05-20
JPS6335083B2 true JPS6335083B2 (zh)	1988-07-13

Family

ID=16125530

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP18284981A Granted JPS5884402A (ja)	1981-11-13	1981-11-13	チタン酸バリウム系半導体磁器素子

Country Status (1)

Country	Link
JP (1)	JPS5884402A (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH023085A (ja) *	1988-06-17	1990-01-08	Hitachi Ltd	液晶投写装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS55122380A (en) *	1979-03-15	1980-09-20	Matsushita Electric Ind Co Ltd	Barium titanate heater

1981
- 1981-11-13 JP JP18284981A patent/JPS5884402A/ja active Granted

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS55122380A (en) *	1979-03-15	1980-09-20	Matsushita Electric Ind Co Ltd	Barium titanate heater

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH023085A (ja) *	1988-06-17	1990-01-08	Hitachi Ltd	液晶投写装置

Also Published As

Publication number	Publication date
JPS5884402A (ja)	1983-05-20

Similar Documents

Publication	Publication Date	Title
US4016061A (en)	1977-04-05	Method of making resistive films
US5289155A (en)	1994-02-22	Positive temperature characteristic thermistor and manufacturing method therefor
US4276535A (en)	1981-06-30	Thermistor
US3188594A (en)	1965-06-08	Thermally sensitive resistances
US3474305A (en)	1969-10-21	Discontinuous thin film multistable state resistors
JPS6335083B2 (zh)	1988-07-13
US4895812A (en)	1990-01-23	Method of making ohmic contact to ferroelectric semiconductors
US3809627A (en)	1974-05-07	Anodized cermet film components and their manufacture
US3738919A (en)	1973-06-12	Technique for adjusting temperature coefficient of resistance of tantalum aluminum alloy films
US3644188A (en)	1972-02-22	Anodizable cermet film components and their manufacture
JP2562588B2 (ja)	1996-12-11	タンタル金属薄膜回路
JP2504309B2 (ja)	1996-06-05	磁器半導体素子の電極形成方法
JPH07272904A (ja)	1995-10-20	正特性サーミスタ
JP3596266B2 (ja)	2004-12-02	非線形誘電体素子
JPS6033793B2 (ja)	1985-08-05	銅被膜を有するセラミツク体
JPH07123082B2 (ja)	1995-12-25	磁器半導体素子の電極形成方法
JPS6243324B2 (zh)	1987-09-12
JPH0992430A (ja)	1997-04-04	サージ吸収素子
JPH0587164B2 (zh)	1993-12-15
JPH03239302A (ja)	1991-10-24	磁器半導体素子及び磁器半導体素子の製造方法
EP0749132A1 (en)	1996-12-18	Positive temperature coefficient thermistor and thermistor device using it
Chandra Shekar et al.	1984	Dielectric properties of vacuum deposited Samarium Oxide sandwich structures
JPS5951722B2 (ja)	1984-12-15	正特性サ−ミスタ等の電極形成法
JP2001274535A (ja)	2001-10-05	銀マイグレーション防止方法
JPS6161245B2 (zh)	1986-12-24