JPS63317675A - Plasma vapor growth device - Google Patents
Plasma vapor growth deviceInfo
- Publication number
- JPS63317675A JPS63317675A JP15218387A JP15218387A JPS63317675A JP S63317675 A JPS63317675 A JP S63317675A JP 15218387 A JP15218387 A JP 15218387A JP 15218387 A JP15218387 A JP 15218387A JP S63317675 A JPS63317675 A JP S63317675A
- Authority
- JP
- Japan
- Prior art keywords
- film
- semiconductor substrate
- plasma vapor
- silicon nitride
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000010409 thin film Substances 0.000 claims abstract description 10
- 230000001678 irradiating effect Effects 0.000 claims abstract description 6
- 238000001947 vapour-phase growth Methods 0.000 claims description 7
- 238000007599 discharging Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 abstract description 27
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 19
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 17
- 239000001257 hydrogen Substances 0.000 abstract description 17
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 12
- 239000007789 gas Substances 0.000 abstract description 6
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000000927 vapour-phase epitaxy Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010494 dissociation reaction Methods 0.000 description 2
- 230000005593 dissociations Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- XMIJDTGORVPYLW-UHFFFAOYSA-N [SiH2] Chemical compound [SiH2] XMIJDTGORVPYLW-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はプラズマ気相成長装置に関し、特に堆積膜中に
おける水素含有量の最適化を図り、高品質の膜を提供で
きるプラズマ気相成長装置に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a plasma vapor phase epitaxy apparatus, and particularly to a plasma vapor phase epitaxy apparatus that can optimize the hydrogen content in a deposited film and provide a high quality film. Regarding.
（従来の技術〕
従来、一般的には真空状態の反応炉中へＳｉＨ４とＮＨ
，を導入し、高周波電力を投入することによりＳｉＨ，
とＮＨ，が分解・励起して解離生成物となる。そしてこ
れら解離生成物は半導体基板上で互いに反応しシリコン
窒化膜を形成していた。(Prior art) Conventionally, SiH4 and NH were generally introduced into a vacuum reactor.
, and by inputting high frequency power, SiH,
and NH, are decomposed and excited to become dissociation products. These dissociation products react with each other on the semiconductor substrate to form a silicon nitride film.
上述した従来のプラズマ気相成長装置を用いてシリコン
窒化膜の堆積を行う場合、堆積した膜中に多量の水素を
含んでいる。シリコン窒化膜はパッシベーション膜、層
間膜として耐水性、汚染に対するバリア性に非常に優れ
ているが、堆積膜中に含有される水素は半導体装置の電
気的安定性、膜のストレス、耐クラツク性と関係がある
ため、薄膜中での水素含有量の最適化が不可欠である。When a silicon nitride film is deposited using the above-described conventional plasma vapor phase growth apparatus, the deposited film contains a large amount of hydrogen. Silicon nitride film has excellent water resistance and contamination barrier properties as a passivation film and interlayer film, but the hydrogen contained in the deposited film affects the electrical stability of semiconductor devices, film stress, and crack resistance. Because of this relationship, optimization of hydrogen content in thin films is essential.
ところが、薄膜中の水素含有量はプラズマ条件により異
なり、かつプラズマ中での反応機・構が解明されていな
いこともあり、水素含有量の制御はできないという欠点
がある。However, the hydrogen content in the thin film varies depending on the plasma conditions, and the reaction mechanism in the plasma has not been elucidated, so there is a drawback that the hydrogen content cannot be controlled.
本発明の目的は前記問題点を解決するプラズマ気相成長
装置を提供することにある。An object of the present invention is to provide a plasma vapor phase growth apparatus that solves the above problems.
上述した従来のプラズマ気相成長装置に対し、本発明は
シリコン窒化膜を堆積させている半導体基板表面に紫外
光線を照射してシリコン窒化膜を形成するＮＨの結合を
切断し水素を解離、放出することにより堆積膜中の水素
含有量を最適化するという独創的内容を有する。In contrast to the conventional plasma vapor phase growth apparatus described above, the present invention irradiates the surface of a semiconductor substrate on which a silicon nitride film is deposited with ultraviolet light to break the NH bonds that form the silicon nitride film and dissociate and release hydrogen. This method has the original content of optimizing the hydrogen content in the deposited film.
本発明はプラズマ気相成長装置の真空槽内に薄膜を堆積
すべき半導体基板を設置する手段と、前記真空槽内に薄
膜を形成する元素を含むガスを導入する手段と、前記基
板を加熱する手段と、前記ガスを放電させる手段と、前
記基板上に薄膜を堆積させるときに基板表面をおよそ３
５００Å以下の波長を有する紫外光線で照射せしめる手
段とを含むことを特徴とするプラズマ気相成長装置であ
る。The present invention provides means for installing a semiconductor substrate on which a thin film is to be deposited in a vacuum chamber of a plasma vapor deposition apparatus, means for introducing a gas containing an element for forming a thin film into the vacuum chamber, and heating the substrate. means for discharging said gas; and a means for discharging said gas;
A plasma vapor phase epitaxy apparatus characterized in that it includes means for irradiating with ultraviolet light having a wavelength of 500 Å or less.
以下、本発明の実施例を図により説明する。 Embodiments of the present invention will be described below with reference to the drawings.
（実施例１）
第１図は本発明の第１の実施例を示す断面図である。第
１図において、１は反応炉、２は半導体基板、３は半導
体基板加熱用のヒーター、４はプラズマ発生用のコイル
、５は光反射用のミラー、６は波長分光用の光学素子、
７は光源、８は窓である。真空状態にある反応炉１中へ
ガス導入口よりＳｉＨ，及びＮＨ３を導入し、およそ１
ｔｏｒｒに保つ。(Example 1) FIG. 1 is a sectional view showing a first example of the present invention. In FIG. 1, 1 is a reactor, 2 is a semiconductor substrate, 3 is a heater for heating the semiconductor substrate, 4 is a coil for plasma generation, 5 is a mirror for light reflection, 6 is an optical element for wavelength spectroscopy,
7 is a light source, and 8 is a window. SiH and NH3 are introduced from the gas inlet into the reactor 1 in a vacuum state, and approximately 1
Keep torr.
そして、プラズマ発生用のコイル４を通して高周波電力
を投入してプラズマを発生させる。このときに半導体基
板２の表面には、プラズマ窒化膜が堆積しているわけで
あるが、同時に紫外光線の照射を行う。まず光源７とし
てはアルゴンランプ、キセノンランプ、水銀ランプ等が
あり紫外光源としておよそ２２００人までの光を得るこ
とができる。Then, high frequency power is applied through the plasma generation coil 4 to generate plasma. At this time, a plasma nitride film is deposited on the surface of the semiconductor substrate 2, and at the same time, ultraviolet light is irradiated. First, the light source 7 includes an argon lamp, a xenon lamp, a mercury lamp, etc., and can provide light for up to about 2,200 people as an ultraviolet light source.
次にＮＨを選択的に効率良くＮとＨに分解させる波長に
紫外光線を光学素子６を用いて分光させる。Next, an optical element 6 is used to disperse ultraviolet light into wavelengths that selectively and efficiently decompose NH into N and H.
この分光された紫外光線はミラー５により光路を変更さ
れ、反応炉１の上部に設けられた窓８を通して半導体基
板２の表面に照射される。ここで窓８としてＬｉＦ又は
ＣａＦ２を使用することにより、紫外光線は反応炉１中
へ入射でき、半導体基板２の表面を照射できる。The optical path of the separated ultraviolet light is changed by a mirror 5, and the surface of the semiconductor substrate 2 is irradiated through a window 8 provided in the upper part of the reactor 1. By using LiF or CaF2 as the window 8, ultraviolet light can enter the reactor 1 and illuminate the surface of the semiconductor substrate 2.
解離するＮＨの量は紫外光線の光量、即ち、ランプの明
るさに比例するから、光量を制御することにより解離す
るＮＨの量を変化させることができ、結果的に堆積して
いるプラズマ窒化膜中の水素量を制御し、最適化するこ
とができる。Since the amount of NH dissociated is proportional to the amount of ultraviolet light, that is, the brightness of the lamp, the amount of NH dissociated can be changed by controlling the amount of light, and as a result, the plasma nitride film deposited can be changed. The amount of hydrogen inside can be controlled and optimized.
これまでにシリコン窒化膜は５ｉ）１．からの５ｉｔ（
、ＳｉＨ２のどちらか、もしくは両方とＮＨ３からのＮ
Ｈが反応し、堆積することが知られているが、シリコン
窒化膜中の水素のうち、特にＮＨとして含有される水素
が半導体特性に悪影響を及ぼしているといわれている。So far, silicon nitride films have been developed using 5i) 1. 5it from (
, SiH2, or both and NH3
Although it is known that H reacts and is deposited, it is said that hydrogen contained in the silicon nitride film, especially hydrogen contained as NH, has an adverse effect on semiconductor characteristics.
そこで本発明ではこのＮＨ結合を光照射を行うことによ
り選択的に切断して、膜中に含有される水素量を最適化
することを特徴としている。ＮＨ結合の結合エネルギー
は３ 、５４ｅＶであるから、約３５００Å以下の波長
を有する光であれば切断可能である。従って、本発明で
はおよそ３５００Å以下の波長を有する紫外光線を照射
する手段を有している。また、シリコン窒化膜成長反応
は表面反応が主反応であることから、シリコン窒化膜の
堆積時に、半導体基板表面に紫外光線を照射し、ＮＨ結
合を効率的に切断することにより、シリコン窒化膜中に
含有される水素量を最適化できる。Therefore, the present invention is characterized in that this NH bond is selectively cut by light irradiation to optimize the amount of hydrogen contained in the film. Since the bond energy of the NH bond is 3.54 eV, it can be cut by light having a wavelength of about 3500 Å or less. Therefore, the present invention includes means for irradiating ultraviolet light having a wavelength of about 3500 Å or less. In addition, since the silicon nitride film growth reaction is mainly a surface reaction, it is possible to irradiate the surface of the semiconductor substrate with ultraviolet light during the deposition of the silicon nitride film to efficiently break the NH bonds. The amount of hydrogen contained in the fuel can be optimized.
（実施例２）
第１の実施例は誘導結合型のプラズマ気相成長装置に本
発明のおよそ３５００Å以下の波長を有する紫外光線を
照射する手段を適用した場合であるのに対し、第２の実
施例は容量結合型のプラズマ気相成長装置に適用した場
合である。第２図は第２の実施例のプラズマ気相成長装
置を示す断面図である。２１は反応炉、２２は半導体基
板、２３はヒーター、２４は電極、２５はミラー、２６
は光学素子、２７は光源、２８は窓である。この実施例
では平行平板型であるために広域にわたって均一な薄膜
が堆積可能である。したがって、大口径の半導体基板を
枚葉で処理するときに有利になるという利点がある。(Example 2) The first example is a case in which the means for irradiating ultraviolet light having a wavelength of about 3500 Å or less of the present invention is applied to an inductively coupled plasma vapor deposition apparatus, whereas the second example The embodiment is a case where the present invention is applied to a capacitively coupled plasma vapor phase growth apparatus. FIG. 2 is a sectional view showing a plasma vapor phase growth apparatus of a second embodiment. 21 is a reactor, 22 is a semiconductor substrate, 23 is a heater, 24 is an electrode, 25 is a mirror, 26
27 is an optical element, 27 is a light source, and 28 is a window. In this embodiment, since it is a parallel plate type, a uniform thin film can be deposited over a wide area. Therefore, there is an advantage that it is advantageous when processing large-diameter semiconductor substrates one by one.
以上説明したように本発明は半導体基板上に薄膜製堆積
させるときに半導体基板表面を光照射せしめる手段を有
することにより、高品質の薄膜を提供できる効果がある
。即ち、シリコン窒化膜においては膜に含有される水素
量を紫外光線照射量により制御できるため、水素含有量
の最適化を図ることができ、高品質の膜を提供でき、そ
のために半導体装置の電気的特性の安定性を向上するこ
とができる。さらに半導体製造プロセスの管理の定量化
ができるために製品の歩留りの向上、製造プロセスの安
定化を実現できるという効果を有するものである。As explained above, the present invention has the effect of providing a high quality thin film by having means for irradiating the surface of the semiconductor substrate with light when depositing the thin film on the semiconductor substrate. In other words, in silicon nitride films, the amount of hydrogen contained in the film can be controlled by the amount of ultraviolet light irradiation, so it is possible to optimize the hydrogen content and provide a high-quality film. The stability of physical properties can be improved. Furthermore, since the management of the semiconductor manufacturing process can be quantified, it has the effect of improving product yield and stabilizing the manufacturing process.
第１図は本発明に係るプラズマ気相成長装置の第１の実
施例を示す断面図、第２図は本発明の第２の実施例を示
す断面図である。FIG. 1 is a sectional view showing a first embodiment of a plasma vapor phase growth apparatus according to the present invention, and FIG. 2 is a sectional view showing a second embodiment of the present invention.
Claims (1)
べき半導体基板を設置する手段と、前記真空槽内に薄膜
を形成する元素を含むガスを導入する手段と、前記基板
を加熱する手段と、前記ガスを放電させる手段と、前記
基板上に薄膜を堆積させるときに基板表面をおよそ３５
００Å以下の波長を有する紫外光線で照射せしめる手段
とを含むことを特徴とするプラズマ気相成長装置。(1) means for installing a semiconductor substrate on which a thin film is to be deposited in a vacuum chamber of a plasma vapor deposition apparatus; means for introducing a gas containing an element for forming a thin film into the vacuum chamber; and heating the substrate. means for discharging said gas; and a means for discharging said gas;
1. A plasma vapor phase growth apparatus comprising means for irradiating with ultraviolet light having a wavelength of 00 Å or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15218387A JPS63317675A (en) | 1987-06-18 | 1987-06-18 | Plasma vapor growth device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15218387A JPS63317675A (en) | 1987-06-18 | 1987-06-18 | Plasma vapor growth device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63317675A true JPS63317675A (en) | 1988-12-26 |
Family
ID=15534870
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15218387A Pending JPS63317675A (en) | 1987-06-18 | 1987-06-18 | Plasma vapor growth device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63317675A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5346578A (en) * | 1992-11-04 | 1994-09-13 | Novellus Systems, Inc. | Induction plasma source |
| US6217721B1 (en) | 1995-08-07 | 2001-04-17 | Applied Materials, Inc. | Filling narrow apertures and forming interconnects with a metal utilizing a crystallographically oriented liner layer |
| US6225744B1 (en) | 1992-11-04 | 2001-05-01 | Novellus Systems, Inc. | Plasma process apparatus for integrated circuit fabrication having dome-shaped induction coil |
| JP2008270764A (en) * | 2007-03-29 | 2008-11-06 | Hitachi Kokusai Electric Inc | Substrate processing device and method for manufacturing semiconductor in the substrate processing device |
| JP2010222690A (en) * | 2009-03-25 | 2010-10-07 | Fujifilm Corp | Method for producing gas barrier film |
-
1987
- 1987-06-18 JP JP15218387A patent/JPS63317675A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5346578A (en) * | 1992-11-04 | 1994-09-13 | Novellus Systems, Inc. | Induction plasma source |
| US5405480A (en) * | 1992-11-04 | 1995-04-11 | Novellus Systems, Inc. | Induction plasma source |
| US5605599A (en) * | 1992-11-04 | 1997-02-25 | Novellus Systems, Inc. | Method of generating plasma having high ion density for substrate processing operation |
| US6225744B1 (en) | 1992-11-04 | 2001-05-01 | Novellus Systems, Inc. | Plasma process apparatus for integrated circuit fabrication having dome-shaped induction coil |
| US6217721B1 (en) | 1995-08-07 | 2001-04-17 | Applied Materials, Inc. | Filling narrow apertures and forming interconnects with a metal utilizing a crystallographically oriented liner layer |
| JP2008270764A (en) * | 2007-03-29 | 2008-11-06 | Hitachi Kokusai Electric Inc | Substrate processing device and method for manufacturing semiconductor in the substrate processing device |
| JP2010222690A (en) * | 2009-03-25 | 2010-10-07 | Fujifilm Corp | Method for producing gas barrier film |
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