JPS63303068A - Substrate heating device - Google Patents
Substrate heating deviceInfo
- Publication number
- JPS63303068A JPS63303068A JP13940787A JP13940787A JPS63303068A JP S63303068 A JPS63303068 A JP S63303068A JP 13940787 A JP13940787 A JP 13940787A JP 13940787 A JP13940787 A JP 13940787A JP S63303068 A JPS63303068 A JP S63303068A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- heater
- heat
- holder
- substrate holder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 51
- 238000010438 heat treatment Methods 0.000 title claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 6
- 230000005855 radiation Effects 0.000 claims abstract description 4
- 239000010409 thin film Substances 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000005240 physical vapour deposition Methods 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000012423 maintenance Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
及」Ｌ貝狗 ”L Kaigu
本発明は、ＰＶＤ法により薄膜を形成させる基板を加熱
する装置の改良に関する。
（従来の技術］
真空蒸着、スパッタリング、イオンブレーティングなど
、ＰＶＤのカテゴリーに入る技術により種々の物質の機
能性薄膜を形成する場合、とくに単結晶薄膜をエピタキ
シャル成長させるためには、基板を加熱しつつＰＶＤを
実施しなければならない。 この目的に使用する基板加
熱装置は、一般に、真空室内にターゲットに対向して設
けた窓を有する７ノード板の背後に、回転可能な基板ホ
ルダー、基板ホルダーの回転駆動手段およびヒーターを
配置した構成をもっている。
基板を加熱する温度は、最近の研究の進虐につれて次第
に高くなっており、たとえば９００℃またはそれ以上に
加熱できることが要望されているが、現在市販されてい
るＰＶＤ装置では、最高４００℃程度までしか加熱でき
ず、この要望に沿うことができない。
そこで発明者らは、既製の装置のヒーター容量を増大し
てみたが、基板の温度上昇が不均一で良質の薄膜は得ら
れないことを経験した。 また、多量の熱の発生で装置
全体の温度が上昇してしまい、真空室の気密の確保に不
安が生じた。
［発明が解決しようとする問題点］
本発明の目的は、上記の経験にかんがみ、機能性薄膜形
成用の基板を加熱する装置を改良し、所望の高い温度ま
で支障なく基板を加熱することができ、かつ基板の温度
の均一性が高く得られる装置を提供することにある。
及更ＯＳ式
［問題点を解決するための手段］
本発明の基板加熱装置は、第１図に示すように、ＰＶＤ
法により薄膜を形成させる基板を加熱する装置であって
、真空室９１内にターゲット３１に対向して設けた窓２
１を有するアノード板２の背（変に配置した、回転可能
な基板ホルダー４、基板ホルダー４の回転駆動手段５お
よびヒーター６から本質的になる装置において、第２図
に主要部を示すように、ヒーター６を固定的かつ基板ホ
ルダー４に対して非接触的に設けて主として輻射熱によ
り基板１を加熱するとともに、ヒーターの背後に少なく
とも１枚の熱反射板７を設けたことを特徴とする。
第２図において、３２はターゲットをとりつけるカソー
ド、９２はスパッタ電源、９３は真空装置、９４はスパ
ッタガス源である。 ８はアノード板の支柱であり、８
１はヒーターおよび熱反射板を電気的に絶縁する絶縁材
料である。
熱反射板７の周縁は、図にみるように筒状に形成し、ヒ
ーター６からの半径方向の輻射熱をも反射するように構
成するとよい。 反射効果を確実にするため、熱反射板
は多数（図示した例では面方向に４枚、半径方向に２枚
）重ねることが好ましい。
［作 用］
従来の基板加熱装置は、第３図に主要部を示すように、
ヒーター６Ａを基板ホルダー４Ａに密着固定し、それと
一体に回転するように構成してあった。
この構造は、熱効率は高く得られるが、ヒーターの温度
ムラがそのまま基板の温度ムラとなってしまう。 温度
ムラの解消は、発明者らの経験によれば、加熱温度を高
くするほど困難である。
本発明に従って、ヒーターを基板ホルダーから離して輻
射熱により加熱し、ヒーターは固定して基板ホルダーが
移動するように構成すれば、加熱は均一に行なわれ、基
板の温度ムラは実質上はとんど解消する。
ヒーターの構造は、被加熱物体である基板ホルダー側に
熱の多くが向い、背後へはなるべく出ないように配慮す
べきことはもちろんであるが、それでも背後にも輻射が
あることは避けられないから、熱反射板でこれを反射す
る。 周縁にも熱反射板を設けて、半径方向の熱輻射を
少なくすれば、熱はヒーターと基板ホルダーのあたりに
閉じ込められる。 このようにして、熱がＤＶＰ装置全
体に拡散する度合を低くすることによって、真空保持に
支障を生じることなく基板を高温に加熱することができ
る。
■ユ辺盈】
本発明の基板加熱装置を使用すれば、ＰＶＤ法により薄
膜を形成させる装置の基板の加熱を、従来の装置では実
現していなかった９００℃以上、最高１２００℃程度の
温度まで、しかも温度ムラが実質上ないほど均一に行な
うことができる。
熱反射板の使用は、真空室内での熱の拡散を最少限に抑
え、高温になる部分を限定するから、熱効率が低下する
ことなく、かつ装置全体の真空保持その他の運転上の問
題が避けられる。
ヒーターは固定されているから、電源の配線は支柱を通
して真空室の筐体に導くことができ、従来の基板ホルダ
ーとともに回転するヒーターの電源を摺動部分を通して
とるという必要がなくなった。The present invention relates to an improvement in an apparatus for heating a substrate on which a thin film is formed by a PVD method. (Prior art) When forming functional thin films of various substances using techniques that fall into the category of PVD, such as vacuum evaporation, sputtering, and ion blating, it is necessary to heat the substrate while epitaxially growing a single crystal thin film. PVD must be carried out. The substrate heating equipment used for this purpose generally consists of a rotatable substrate holder, a rotatable substrate holder behind a seven-node plate with a window facing the target in the vacuum chamber, and a It has a configuration in which a driving means and a heater are arranged.The temperature at which the substrate is heated has gradually become higher as research progresses in recent years, and it is desired to be able to heat the substrate to 900°C or higher, for example, but there are currently no commercially available devices. The current PVD equipment can only heat up to a maximum of 400°C and cannot meet this demand.The inventors therefore tried increasing the heater capacity of the existing equipment, but the temperature rise of the substrate was uneven. In addition, the generation of a large amount of heat caused the temperature of the entire device to rise, causing concerns about ensuring the airtightness of the vacuum chamber. Problems] In view of the above experience, an object of the present invention is to improve an apparatus for heating a substrate for forming a functional thin film, to be able to heat the substrate to a desired high temperature without any trouble, and to reduce the temperature of the substrate. It is an object of the present invention to provide an apparatus that can obtain high uniformity.Additionally, OS type [Means for solving the problem] The substrate heating apparatus of the present invention is a PVD heating apparatus as shown in FIG.
This device heats a substrate on which a thin film is to be formed by a method, and includes a window 2 provided in a vacuum chamber 91 facing a target 31.
An apparatus consisting essentially of a rotatable substrate holder 4, a rotary drive means 5 for the substrate holder 4 and a heater 6, the back of an anode plate 2 having an anode plate 1 (oddly arranged), the main parts of which are shown in FIG. , a heater 6 is provided fixedly and in a non-contact manner with respect to the substrate holder 4 to heat the substrate 1 mainly by radiant heat, and at least one heat reflecting plate 7 is provided behind the heater. In Fig. 2, 32 is a cathode for attaching a target, 92 is a sputtering power source, 93 is a vacuum device, and 94 is a sputtering gas source.8 is a support for the anode plate;
1 is an insulating material that electrically insulates the heater and the heat reflecting plate. The periphery of the heat reflecting plate 7 is preferably formed into a cylindrical shape as shown in the figure, so as to also reflect the radiant heat from the heater 6 in the radial direction. In order to ensure the reflection effect, it is preferable to stack a large number of heat reflecting plates (in the illustrated example, four in the planar direction and two in the radial direction). [Function] The conventional substrate heating device has the following main parts as shown in Figure 3.
The heater 6A was tightly fixed to the substrate holder 4A and was configured to rotate together with the heater 6A. Although this structure provides high thermal efficiency, temperature unevenness in the heater directly causes temperature unevenness in the substrate. According to the experience of the inventors, the higher the heating temperature, the more difficult it is to eliminate temperature unevenness. According to the present invention, if the heater is separated from the substrate holder and heated by radiant heat, and if the heater is fixed and the substrate holder is moved, the heating will be uniform and the temperature unevenness of the substrate will be virtually eliminated. Eliminate. The structure of the heater is such that most of the heat is directed toward the substrate holder side, which is the heated object, and care must be taken to prevent it from radiating to the back as much as possible, but it is still unavoidable that there is radiation from behind as well. This is reflected by a heat reflector. If a heat reflector is also provided on the periphery to reduce radial heat radiation, the heat will be trapped around the heater and substrate holder. In this way, by reducing the degree to which heat diffuses throughout the DVP device, it is possible to heat the substrate to a high temperature without interfering with vacuum maintenance. ■Ube Ei] By using the substrate heating device of the present invention, the substrate of a device that forms thin films using the PVD method can be heated to a temperature of over 900°C and a maximum of about 1200°C, which was not possible with conventional equipment. Moreover, it can be carried out so uniformly that there is virtually no temperature unevenness. The use of a heat reflector minimizes the diffusion of heat within the vacuum chamber and limits the areas that become hot, so thermal efficiency does not decrease and problems with vacuum maintenance and other operational issues are avoided. It will be done. Since the heater is fixed, the power supply wiring can be routed through the support to the vacuum chamber housing, eliminating the need for the heater, which rotates with the conventional substrate holder, to be powered through a sliding part.
第１図は、ＰＶＤにより薄膜を形成させる装置の構成を
、真空室内を断面で示した概念的な図である。
第２図は、本発明の基板加熱装置の構造を示す断面図で
ある。
第３図は、従来の基板加熱装置の構造を示す、第２図と
同様な断面図である。
１・・・基 板 ２・・・アノード板３１・
・・ターゲット ３２・・・カソード４・・・基板
ホルダー
５・・・基板ホルダー回転駆動手段
６．６Ａ・・・ヒーター ７・・・熱反射板９１・・
・真 空 室 ９２・・・スパッタ電源９３・・・
真空装＠ ９４・・・スパッタガス源特許出願人
大同特殊鋼株式会社
代理人 弁理士 須 賀 総 夫
第１図FIG. 1 is a conceptual diagram showing a vacuum chamber in cross section, showing the configuration of an apparatus for forming a thin film by PVD. FIG. 2 is a sectional view showing the structure of the substrate heating device of the present invention. FIG. 3 is a sectional view similar to FIG. 2, showing the structure of a conventional substrate heating device. 1... Substrate 2... Anode plate 31.
...Target 32...Cathode 4...Substrate holder 5...Substrate holder rotation drive means 6.6A...Heater 7...Heat reflecting plate 91...
・Vacuum chamber 92...Sputter power supply 93...
Vacuum system @ 94... Sputtering gas source patent applicant
Daido Steel Co., Ltd. Agent Patent Attorney Souo Suga Figure 1
Claims (2)
装置であつて、真空室内にターゲットに対向して設けた
窓を有するアノード板の背後に配置した、回転可能な基
板ホルダー、基板ホルダーの回転駆動手段およびヒータ
ーから本質的になる装置において、ヒーターを固定的か
つ基板ホルダーに対して非接触的に設け、主として熱輻
射により基板を加熱するとともに、ヒーターの背後に少
なくとも１枚の熱反射板を設けたことを特徴とする基板
加熱装置。(1) A device that heats a substrate on which a thin film is to be formed by the PVD method, which is a rotatable substrate holder placed behind an anode plate that has a window facing the target in a vacuum chamber, and rotation of the substrate holder. In an apparatus consisting essentially of a driving means and a heater, the heater is provided fixedly and in a non-contact manner with respect to the substrate holder, and the substrate is heated mainly by thermal radiation, and at least one heat reflecting plate is provided behind the heater. A substrate heating device characterized in that:
半径方向の輻射熱をも反射するように構成した特許請求
の範囲第１項の基板加熱装置。(2) The substrate heating device according to claim 1, wherein the heat reflecting plate has a cylindrical periphery so as to reflect radiant heat from the heater in a radial direction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13940787A JPS63303068A (en) | 1987-06-03 | 1987-06-03 | Substrate heating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13940787A JPS63303068A (en) | 1987-06-03 | 1987-06-03 | Substrate heating device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63303068A true JPS63303068A (en) | 1988-12-09 |
Family
ID=15244534
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13940787A Pending JPS63303068A (en) | 1987-06-03 | 1987-06-03 | Substrate heating device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63303068A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102586752A (en) * | 2011-12-23 | 2012-07-18 | 友达光电股份有限公司 | Substrate fixing device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5435178A (en) * | 1977-08-23 | 1979-03-15 | Matsushita Electric Ind Co Ltd | Ultrafine particle depositing apparatus |
| JPS5992019A (en) * | 1982-10-18 | 1984-05-28 | ウエスタ−ン・エレクトリツク・カムパニ−・インコ−ポレ−テツド | Vacuum vapor deposition of material onto heating plate |
-
1987
- 1987-06-03 JP JP13940787A patent/JPS63303068A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5435178A (en) * | 1977-08-23 | 1979-03-15 | Matsushita Electric Ind Co Ltd | Ultrafine particle depositing apparatus |
| JPS5992019A (en) * | 1982-10-18 | 1984-05-28 | ウエスタ−ン・エレクトリツク・カムパニ−・インコ−ポレ−テツド | Vacuum vapor deposition of material onto heating plate |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102586752A (en) * | 2011-12-23 | 2012-07-18 | 友达光电股份有限公司 | Substrate fixing device |
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