JPS6329938A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6329938A
JPS6329938A JP61171912A JP17191286A JPS6329938A JP S6329938 A JPS6329938 A JP S6329938A JP 61171912 A JP61171912 A JP 61171912A JP 17191286 A JP17191286 A JP 17191286A JP S6329938 A JPS6329938 A JP S6329938A
Authority
JP
Japan
Prior art keywords
wire
bonding
copper
elements
ball
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61171912A
Other languages
Japanese (ja)
Other versions
JPH0785485B2 (en
Inventor
Michio Sato
道雄 佐藤
Isao Suzuki
功 鈴木
Kazuhiro Yamamori
山森　和弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP61171912A priority Critical patent/JPH0785485B2/en
Publication of JPS6329938A publication Critical patent/JPS6329938A/en
Publication of JPH0785485B2 publication Critical patent/JPH0785485B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
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    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
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    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/85439—Silver (Ag) as principal constituent
    • H—ELECTRICITY
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    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
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    • H01L2924/01029—Copper [Cu]
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To lengthen the lifetime of creep rupture due to the load of tensile stress generated by a temperature cycle by using a specific copper alloy inhibiting recrystallization as a bonding wire for a semiconductor element. CONSTITUTION:In a semiconductor device in which wire bondings 4 are used for connection with a semiconductor chip, a wire material, which contains one kind or two kinds or more of elements of 20-440ppm selected from Sc, Y, La and Ce or contains one kind or two kinds or more of elements of 25-250ppm selected from Sb, P, Li, Sn, Pb and Cd or one kind or two kinds or more of elements of 25-250ppm selected from Sb, P, Li, Sn, Pb and Cd and the remainder of which consists of Cu, is employed as a wire bonding raw material. Accordingly, performance stable for a prolonged term to a temperature change is displayed by using a copper wire having excellent creep strength and superior bonding properties.

Description

【発明の詳細な説明】 〔発明の目的〕 （産業上の利用分野） 本発明は、半導体のチップ電極と外部引出し用リードフ
レー２１のインナーリード部とをワイヤボンディングし
た半導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a semiconductor device in which a semiconductor chip electrode and an inner lead portion of an external lead frame 21 are wire-bonded.

（従来の技術） 一般に、トランジスタ、ＩＣ（集積回路）　ＬＳＩ（大
規模集積回路）の如き半導体装置としては、例えば第２
図に示す構造のものが知られている。(Prior Art) In general, semiconductor devices such as transistors, ICs (integrated circuits), and LSIs (large-scale integrated circuits) are
The structure shown in the figure is known.

ダイフレームの上に半導体チップであるペレット２をダ
イボンディングし、このペレット２の電極とリードフレ
ーム３とをボンディングワイヤ４で電気的に接続した後
、これらを樹脂５でモールディングすることにより形成
される。It is formed by die-bonding a pellet 2, which is a semiconductor chip, onto a die frame, electrically connecting the electrode of this pellet 2 and a lead frame 3 with a bonding wire 4, and then molding them with a resin 5. .

前記ボンディングワイヤとしては、熱圧着法あるいは超
音波併用熱圧着法によりボンディングするφ２０〜１０
０μｍの金、超音波法によりボンディングするφ２５〜
５０−のアルミニウム合金（例えばＡＱ−１％ＳＬ、Ａ
Ω−１％Ｍｇ）とφ１００〜５００μ〜の高純度アルミ
ニウム（９９，９Ｑ％以上）が用いられている。The bonding wire has a diameter of 20 to 10 mm and is bonded by thermocompression bonding or ultrasonic thermocompression bonding.
0μm gold, φ25~ bonded by ultrasonic method
50- aluminum alloy (e.g. AQ-1%SL, A
Ω-1%Mg) and high purity aluminum (99.9Q% or more) with a diameter of 100 to 500μ.

現在、金ワイヤは普及タイプのＩＣやＬＳＩに用い、ア
ルミニウムワイヤはサーディプ型またはパワートランジ
スタ用にと使いわけられている。Currently, gold wire is used for popular type ICs and LSIs, and aluminum wire is used for cerdip type or power transistors.

最近、集積度の増加に伴う多ピン化の傾向によって、金
ワイヤのコストを無視することが出来なくなっている。Recently, the cost of gold wire cannot be ignored due to the trend toward increasing the number of pins as the degree of integration increases.

そのため、ボンディングワイヤを高価な金から比較的安
価な銅に変更することが検ス 討されている。また銅は金に比べ材料コントが大幅に低
減する他に、導電率が高く細線化が可能で、さらにアル
ミニウム電極との金属間化合物が生成しにくく、接合部
の高温強度が優れている等の特徴を有している。Therefore, consideration is being given to changing the bonding wire from expensive gold to relatively inexpensive copper. In addition, copper has significantly lower material resistance than gold, has high conductivity, can be made into thin wires, is less likely to form intermetallic compounds with aluminum electrodes, and has excellent high-temperature strength at joints. It has characteristics.

銅ワイヤを用いたボンディングは、アルゴン、窒素、水
素等の還元ガス雰囲気中で、電気トーチによる放電ある
いは酸水素炎による加熱により銅ワイヤを溶融してボー
ルを形成し、このボールをアルミニウム電極にキャピラ
リで超音波を印加しながら接合する。この時、銅ボール
の表面が侵入空気によって酸化し、さらに形成されたボ
ールが金あるいはアルミニウムのボールに比べて硬すぎ
るため、半導体チップの損傷あるいはボンディング強度
不足によるワイヤの剥離など発生する場合がある。そこ
で、銅を硬くしているＳ、Ｏ，Ｓｅ。Bonding using copper wire involves melting the copper wire into a ball by discharging it with an electric torch or heating it with an oxyhydrogen flame in a reducing gas atmosphere such as argon, nitrogen, or hydrogen, and then attaching this ball to an aluminum electrode using a capillary. Weld while applying ultrasonic waves. At this time, the surface of the copper ball is oxidized by the invading air, and the formed ball is too hard compared to gold or aluminum balls, which may cause damage to the semiconductor chip or peeling of the wire due to insufficient bonding strength. . Therefore, S, O, and Se make copper hard.

Ｔｅ等の不純物元素を低減した高純度の銅ワイヤ（９９
，９９％以上）を用いて上述の欠点を解消する試みがな
されているが、良好な結果は得られていない。High purity copper wire with reduced impurity elements such as Te (99%)
.

また銅ワイヤによって配線されたトランジスタ。Also transistors wired by copper wire.

ＩＣ及びＬＳＩは、一般に経済性や量産性の点で優れて
いる樹脂封止（例えばエポキシ樹脂、シリコン樹脂）し
て使用される。しかしながら、樹脂封止型索子はボンデ
ィングワイヤが直接樹脂に包まれた状態になっているた
め、ａ作中の発熱によってボンディングワイヤには引張
応力が加わる。ICs and LSIs are generally used after being encapsulated with resin (for example, epoxy resin or silicone resin), which is superior in terms of economy and mass production. However, in the resin-sealed cord, the bonding wire is directly wrapped in resin, so tensile stress is applied to the bonding wire due to the heat generated during operation a.

これはモールド樹脂（エポキシ樹脂：２２〜３０Ｘ１０
−’　／　’Ｃ）とボンディングワイヤ（銅：　１７　
ｘ　１０−’／℃）及びリードフレーム（４２合金：　
４．５Ｘ　１ｏ”７℃）の熱膨張係数が大きく異なるた
めで、高温雰囲気になると相互間の熱膨張差によってボ
ンディングワイヤには引張応力が作用する。このような
動作中の発熱冷却により生ずる繰返し引張応力が長時間
し；わたってボンディングワイヤである高純度銅に作用
すると、アルミニウム電極上に接合した銅ボール直上部
の結晶粒界からクラックが発生してクリープ破断する。This is mold resin (epoxy resin: 22~30X10
-'/'C) and bonding wire (copper: 17
x 10-'/℃) and lead frame (42 alloy:
This is because the thermal expansion coefficients of 4.5X 1o" (7℃) are significantly different, and in a high-temperature atmosphere, tensile stress is applied to the bonding wire due to the difference in thermal expansion between them. This is due to the repetitive stress caused by heat generation and cooling during operation. When tensile stress acts on the high-purity copper bonding wire for a long period of time, cracks occur at the grain boundaries directly above the copper ball bonded to the aluminum electrode, resulting in creep rupture.

またアルミニウム電極との接とがある。There is also contact with an aluminum electrode.

（発明が解決しようとする問題点） 本発明はこのような問題を解決するためになさだもので
、クリープ強さ良好でかつボンディング性の優れた銅ワ
イヤを用いた信頼性の高い半導体装置を提供することを
目的とする。(Problems to be Solved by the Invention) The present invention has been made to solve these problems, and provides a highly reliable semiconductor device using copper wire with good creep strength and excellent bonding properties. The purpose is to provide.

〔発明の構成〕[Structure of the invention]

（問題点を解決するための手段） そこで本発明者等は、上述の問題点に対して鋭意検討を
重ねた結果、銅ワイヤのクリープによる結晶粒界破断は
、鋼ワイヤの再結晶に伴う高温強度の低下が大きな要因
で、また銅ボールの硬化原因の１つは、ボール形成時に
銅ボール中に侵入する空気中の酸素によって酸化銅（Ｃ
ｕ、０）が形成されるためであることを見い出し、本発
明を完成するに敗った・ すなわち、本発明は半導体チップとの接続にワイヤボン
ディングを用いた半導体装置において、前記ワイヤボン
ディング素材として、Ｓｃ、　Ｙ、　Ｌａ及びＣａから
選択された１種または２種以上の元素を２０〜４４０ｐ
ｐｍ（ｗｔ　ＰＰＩ！ｌ、以下間）含有し、かつｓｂ、
ｐ。(Means for Solving the Problems) Therefore, as a result of intensive studies on the above-mentioned problems, the present inventors have found that grain boundary rupture due to creep of copper wires is caused by high temperatures associated with recrystallization of steel wires. The main reason for the decrease in strength, and one of the causes of hardening of copper balls, is that copper oxide (C
U, 0) was formed, and the present invention was unsuccessful.In other words, the present invention provides a semiconductor device using wire bonding for connection with a semiconductor chip, in which the wire bonding material is used as the wire bonding material. , Sc, Y, La and Ca at 20 to 440p of one or more elements selected from
Contains pm (wt PPI!l, below), and sb,
p.

しｉ、　Ｓｎ、　Ｐｂ及びＣｄから選択された１＠また
は２種以上の元素を２５〜２５０ｐｐｍ、又は、Ｓｂ、
　Ｐ、　Ｌｉ、　Ｓｎ。25 to 250 ppm of one or more elements selected from Si, Sn, Pb and Cd, or Sb,
P, Li, Sn.

Ｐｂ及びＣｄから選択された１種または２種以上の元素
を２５〜２５０ｐｐｍ含有し、残部がＣｕからなるワイ
゛ヤ材を用いることを特徴とする半導体装置である。This semiconductor device is characterized by using a wire material containing 25 to 250 ppm of one or more elements selected from Pb and Cd, and the remainder being Cu.

（作　用） 次に本発明で規定する各元素の効果と含有員の限定理由
について説明する。(Function) Next, the effects of each element defined in the present invention and the reason for limiting the number of elements included will be explained.

Ｓｃ、　Ｙ、　Ｌａ及びＣｅは微量の添加で転位の回復
と再結晶時の粒界移動を遅らせて再結温度を高め、銅ワ
イヤの粒界破断を防止する効果を発揮するが、あまり多
いと銅中に固溶あるいは析出して著しく強度が増大し、
銅ボールが硬化して半導体チップに損傷を与え、かつ接
合強度が低下して銅ボールが剥離し易くなる。したがっ
て、添加量は２０〜４４０ｐｐｍとした。When added in small amounts, Sc, Y, La, and Ce have the effect of delaying dislocation recovery and grain boundary movement during recrystallization, increasing the reconsolidation temperature, and preventing grain boundary fracture in copper wire, but if too much is added, It forms a solid solution or precipitates in copper, significantly increasing its strength.
The copper balls harden and damage the semiconductor chip, and the bonding strength decreases, making it easier for the copper balls to peel off. Therefore, the amount added was 20 to 440 ppm.

またＳｂ、　Ｌｉ、　Ｓｎ、　Ｐｂ及びＣｄは銅ボール
形成時の侵入酸素と反応して酸化物を生成し、これが銅
ボール中から蒸発するため、銅ボールを軟化する効果が
ある。その効果を充分に得るためには２５ｐｐｍを超え
る添加が必要となるが、２５０ｐｐｍの添加は銅ボール
中に未反応の元素が残存し、ボール硬度を高め、ボール
変形能が低下するので、２５〜２５０ｐｐｍの範囲とし
た。Further, Sb, Li, Sn, Pb, and Cd react with the oxygen that invades during the formation of the copper ball to produce oxides, which evaporate from the copper ball, thereby having the effect of softening the copper ball. In order to fully obtain the effect, it is necessary to add more than 25 ppm, but adding 250 ppm will leave unreacted elements in the copper ball, increasing the ball hardness and reducing the ball deformability. The range was 250 ppm.

またＡｓ、　Ｚｎ、　Ｋ、　Ｓｒ、　Ｍｇ、　Ｃａ及び
Ｔ】は銅ボール形成時に鋼中から気化してボール中への
酸素混入を阻止し、ボール硬化を防ぐ効果がある。その
効果を充分に得るためには１０ｐｐｍを超える添加が必
要となるが、　６５０ｐｐｍの添加は銅ボール中に未反
応の元素が残存し、ボール硬度を高め、ボール変形能が
低下するので、１０〜６５０Ｐρ駕の範囲とした。Furthermore, As, Zn, K, Sr, Mg, Ca, and T] are vaporized from the steel during the formation of the copper ball, and have the effect of preventing oxygen from entering the ball, thereby preventing the ball from hardening. In order to fully obtain the effect, it is necessary to add more than 10 ppm, but adding 650 ppm will leave unreacted elements in the copper ball, increasing the ball hardness and reducing the ball deformability. The range was set at 650 Pρ.

さらに本発明においてボンディング性を改善するために
は、銅中に不純物として含有しているＳ及びｏ旦を減少
させることが有効である。銅中のＳ及びＱは、第１図に
示すように形成されたボール表面に濃化偏析するため、
ボンディング性の劣化を招く。このためＳ≦ｉｐｐｍ、
Ｏ≦２　ｐｐｍとした。Furthermore, in the present invention, in order to improve bonding properties, it is effective to reduce S and otan contained as impurities in copper. S and Q in copper are concentrated and segregated on the surface of the ball formed as shown in Figure 1.
This leads to deterioration of bonding properties. Therefore, S≦ippm,
O≦2 ppm.

（実施例） 以下、具体的な実施例に基づいて本発明を説明する。(Example) The present invention will be described below based on specific examples.

ゾーンメルティング法によって得た純度９９．９９９ｗ
ｔ、％の高純度銅を素材として、第１表に示すように、
純度９９．９ｗｔ、％以」二の各種元素を添加した試料
を真空溶解により作製した。φ２０鵠の各鋳塊を百円し
、１　ｒｒａまで冷間引抜き後、４００℃でｌｈｒ焼鈍
し。Purity 99.999w obtained by zone melting method
As shown in Table 1, using high purity copper of t,% as the raw material,
Samples with a purity of 99.9 wt% or more and to which various elements were added were prepared by vacuum melting. Each ingot of φ20 was sold at 100 yen, cold drawn to 1 rra, and then annealed at 400°C for 1 hour.

さらに引抜き加工によりφ２５趨の細線とした。次に線
材を３００’（で等温焼鈍を行ない試料とした。Furthermore, it was made into a thin wire with a diameter of 25 mm by drawing processing. Next, the wire rod was subjected to isothermal annealing at 300' and used as a sample.

得られた試料を用い、アルゴンと水素の混合還元ガス雰
囲気中で電気アークによりボールを形成し、半導体チッ
プ上のアルミニウム電極と、Ａｇメッキを施した銅リー
ドフレームにボンディングを行なった後、電極部との接
合強度をブツシュ・テストで測定した。またワイヤを剥
離した電極面を塩酸でエツチングし、チップ損傷の有無
を光学顕微鏡で調べた。これらの結果を第２表に示す。Using the obtained sample, a ball was formed by electric arc in a mixed reducing gas atmosphere of argon and hydrogen, and after bonding was performed to an aluminum electrode on a semiconductor chip and a copper lead frame plated with Ag, the electrode part was The bonding strength was measured using the Butsch test. In addition, the electrode surface from which the wire was removed was etched with hydrochloric acid, and the presence or absence of chip damage was examined using an optical microscope. These results are shown in Table 2.

ところで、第１表に示す比較例についても実施例と同様
に試料を作成して、それぞれ本発明例に対応する試験を
行なった。By the way, samples for the comparative examples shown in Table 1 were prepared in the same manner as in the examples, and tests corresponding to the inventive examples were conducted.

第２表の結果から明らかなように、本発明の実施例は比
較例に比べ接合強度が高く、しかもチップ損傷は発生し
ていないことから優れたボンディング性を有しているこ
とが確認された。As is clear from the results in Table 2, the examples of the present invention had higher bonding strength than the comparative examples, and no chip damage occurred, confirming that they had excellent bonding properties. .

次に配線した半導体素子を樹脂封止し、高温放置試験（
２００℃Ｘ　５００ｈｒ）と温度サイクル試験（−６５
’ＣＸ３０ｍ１ｎ→２５℃Ｘ　５ｍ１ｎ→２００℃Ｘ　
３０ｍ１ｎを１００サイクル実施）を行なった。その結
果を第２表に示す。Next, the wired semiconductor elements are sealed with resin, and a high temperature storage test (
200°C x 500hr) and temperature cycle test (-65
'CX30m1n→25℃X 5m1n→200℃X
100 cycles of 30 m1n) were carried out. The results are shown in Table 2.

この表から明らかなように９本発明の実施例にはワイヤ
剥離さらにワイヤ断線は認められず、優れたボンディン
グ性及びクリープ強さを有していることが確認された。As is clear from this table, wire peeling and wire breakage were not observed in the 9 examples of the present invention, and it was confirmed that they had excellent bonding properties and creep strength.

（以下余白ン 第１表■ 第１表■ 以下余白 第２表（１） １）試料５０個の平均値 ２）各試験の試料は１種類当り５０個である以下余白 第２表■ ■）試料５０個の平均値 ２）上記各試験の試料数は１種類当り５０個である。(Margin below) Table 1■ Table 1■ Margin below Table 2 (1) 1) Average value of 50 samples 2) The number of samples for each test is 50 per type. Table 2■ ■) Average value of 50 samples 2) The number of samples for each test above was 50 per type.

以下余白 〔発明の効果〕 以上説明したように本発明は、再結晶を抑制する銅合金
を半導体素子のボンディングワイヤとして用いるので、
温度サイクルによって発生する引張応力の負荷によるク
リープの破断寿命が大幅に向上する。またボール中への
酸化物の混入がなく。Margins below [Effects of the Invention] As explained above, the present invention uses a copper alloy that suppresses recrystallization as a bonding wire for a semiconductor element.
The rupture life of creep due to the loading of tensile stress generated by temperature cycling is greatly improved. Also, there is no oxide mixed into the ball.

軟かいボールが形成できるので、接合強度が向上し、チ
ップ損傷が防止できる。このように、本発明によれば、
温度変化に対して長時間にわたって安定した性能を発揮
し、かつ良好なボンディング性を有する半導体装置を提
供することができる。Since a soft ball can be formed, bonding strength can be improved and chip damage can be prevented. Thus, according to the present invention,
It is possible to provide a semiconductor device that exhibits stable performance over a long period of time against temperature changes and has good bonding properties.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は銅ボール表面からの不純物分布曲線図。 第２図は樹脂封止型ＩＣを示す［略断面図である。 ２・・・ペレット　　　　　３・・・レードフレーム４
・・・ボンディングワイヤ 代理人　弁理士　則　近　憲　佑 同　　　　竹　花　喜久男Figure 1 is an impurity distribution curve diagram from the surface of the copper ball. FIG. 2 is a schematic cross-sectional view showing a resin-sealed IC. 2... Pellet 3... Rad frame 4
...Bonding wire agent Patent attorney Nori Chika Yudo Kikuo Takehana

Claims (2)

【特許請求の範囲】[Claims] （１）半導体チップとの接続にワイヤボンディングを用
いた半導体装置において、前記ワイヤボンディング素材
として、Ｓｃ、Ｙ、Ｌａ及びＣｅから選択された１種ま
たは２種以上の元素を２０〜４４０ｐｐｍを含有し、か
つＡｓ、Ｚｎ、Ｋ、Ｓｒ、Ｍｇ、Ｃａ及びＴｌから選択
された１種または２種以上の元素を１０〜６５０ｐｐｍ
又はＳｂ、Ｐ、Ｌｉ、Ｓｎ、Ｐｂ及びＣｄから選択され
た１種または２種以上の元素を２５〜２５０ｐｐｍ含有
し、残部がＣｕからなるワイヤ材を用いることを特徴と
する半導体装置。(1) In a semiconductor device using wire bonding for connection with a semiconductor chip, the wire bonding material contains 20 to 440 ppm of one or more elements selected from Sc, Y, La, and Ce. , and 10 to 650 ppm of one or more elements selected from As, Zn, K, Sr, Mg, Ca, and Tl.
Or, a semiconductor device characterized by using a wire material containing 25 to 250 ppm of one or more elements selected from Sb, P, Li, Sn, Pb, and Cd, with the remainder being Cu. （２）前記ワイヤボンディング素材として、ワイヤ材が
さらにＳを１ｐｐｍ以下Ｏを２ｐｐｍ以下含有すること
を特徴とする特許請求の範囲第１項記載の半導体装置。(2) The semiconductor device according to claim 1, wherein the wire material as the wire bonding material further contains S at 1 ppm or less and O at 2 ppm or less.
JP61171912A 1986-07-23 1986-07-23 Semiconductor device Expired - Lifetime JPH0785485B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61171912A JPH0785485B2 (en) 1986-07-23 1986-07-23 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61171912A JPH0785485B2 (en) 1986-07-23 1986-07-23 Semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP5196727A Division JPH0828384B2 (en) 1993-07-15 1993-07-15 Bonding wire

Publications (2)

Publication Number Publication Date
JPS6329938A true JPS6329938A (en) 1988-02-08
JPH0785485B2 JPH0785485B2 (en) 1995-09-13

Family

ID=15932135

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61171912A Expired - Lifetime JPH0785485B2 (en) 1986-07-23 1986-07-23 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH0785485B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104278169B (en) * 2013-07-12 2016-08-31 河南理工大学 A kind of corrosion-resistant bonding brass wire and preparation method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59139662A (en) * 1983-01-31 1984-08-10 Mitsubishi Metal Corp Alloy thin wire for wire bonding of semiconductor device
JPS60124960A (en) * 1983-12-09 1985-07-04 Sumitomo Electric Ind Ltd Wire for connecting semiconductor element
JPS6120693A (en) * 1984-07-06 1986-01-29 Toshiba Corp Bonding wire
JPS62127438A (en) * 1985-11-26 1987-06-09 Nippon Mining Co Ltd Bonding wire for semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59139662A (en) * 1983-01-31 1984-08-10 Mitsubishi Metal Corp Alloy thin wire for wire bonding of semiconductor device
JPS60124960A (en) * 1983-12-09 1985-07-04 Sumitomo Electric Ind Ltd Wire for connecting semiconductor element
JPS6120693A (en) * 1984-07-06 1986-01-29 Toshiba Corp Bonding wire
JPS62127438A (en) * 1985-11-26 1987-06-09 Nippon Mining Co Ltd Bonding wire for semiconductor device

Also Published As

Publication number Publication date
JPH0785485B2 (en) 1995-09-13

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