JPS63281451A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS63281451A JPS63281451A JP11466887A JP11466887A JPS63281451A JP S63281451 A JPS63281451 A JP S63281451A JP 11466887 A JP11466887 A JP 11466887A JP 11466887 A JP11466887 A JP 11466887A JP S63281451 A JPS63281451 A JP S63281451A
- Authority
- JP
- Japan
- Prior art keywords
- pellet
- shaped
- band
- electrodes
- molding material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 16
- 239000008188 pellet Substances 0.000 claims abstract description 53
- 229910000679 solder Inorganic materials 0.000 claims abstract description 21
- 239000012778 molding material Substances 0.000 claims abstract description 15
- 229920002379 silicone rubber Polymers 0.000 claims abstract description 13
- 239000004945 silicone rubber Substances 0.000 claims abstract description 13
- 229920005989 resin Polymers 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 abstract description 14
- 239000003822 epoxy resin Substances 0.000 abstract description 6
- 229920000647 polyepoxide Polymers 0.000 abstract description 6
- 230000008602 contraction Effects 0.000 abstract description 4
- 238000005336 cracking Methods 0.000 abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 5
- 229910052710 silicon Inorganic materials 0.000 abstract 5
- 239000010703 silicon Substances 0.000 abstract 5
- 229920001296 polysiloxane Polymers 0.000 description 22
- 238000002844 melting Methods 0.000 description 8
- 230000008018 melting Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- 230000001595 contractor effect Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000010008 shearing Methods 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 230000001351 cycling effect Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000012756 surface treatment agent Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は面付形レジンモールドダイオードの内部電極構
造に係り、特に熱ストレスによりペレットに加わる力を
緩和する構造に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to an internal electrode structure of a surface-mounted resin molded diode, and particularly to a structure that alleviates the force exerted on a pellet due to thermal stress.
従来のレジンモールドダイオードは第２図に示すような
アキシャルリード形が広く知られている（例えば特開昭
５９−１１３６４８）。図において、１１はシリコーン
ペレット、１２は半田層、１６はヘッダ部を有する１対
のリード、１４はシリコーンゴム、１５はモールド材で
ある。これに対し、プリント基板の実装技術の進歩によ
り、最近面実装技術に対応する第３図に示すような面付
形ダイオ−ド構造に移行する傾向にある。面付形ダイオ
ードは、２個の帯状電極１３間にシリコーンペレット１
１を接着し、これを電極端を残してモールド材１５でモ
ールドし、電極端をモールド材１５の外周に沿って折り
曲げた構造となっている。１２は半田層、１４はシリコ
ーンゴムである。As a conventional resin mold diode, an axial lead type as shown in FIG. 2 is widely known (for example, Japanese Patent Laid-Open No. 113648/1983). In the figure, 11 is a silicone pellet, 12 is a solder layer, 16 is a pair of leads having a header portion, 14 is silicone rubber, and 15 is a molding material. On the other hand, with advances in printed circuit board mounting technology, there has been a recent trend toward a surface-mounted diode structure as shown in FIG. 3, which corresponds to surface-mounting technology. The surface-mounted diode has a silicone pellet 1 between two strip electrodes 13.
1 is glued together, this is molded with a molding material 15 leaving the electrode end, and the electrode end is bent along the outer periphery of the molding material 15. 12 is a solder layer, and 14 is silicone rubber.
面付形ダイオードで使用される材料のうち、電極に使用
される材料は銅でこの線膨張係数は１６．５ｘｌＯ−６
／’Ｃ程度である。モールドに使用される材料はエポキ
シ樹脂でこの線膨張係数は２５〜３０Ｘ１０−６／℃程
度である。この線膨張係数の差により、ストレスフリー
の温度に対しく通常はエポキシ樹脂をモールド硬化した
温度）高い温度になるとシリコーンペレットに引張りの
せん断力が加わり、低い温度になると圧縮のせん断力が
加わることになる。Among the materials used in surface-mounted diodes, the material used for the electrodes is copper, whose coefficient of linear expansion is 16.5xlO-6.
/'C level. The material used for the mold is epoxy resin, and its coefficient of linear expansion is approximately 25 to 30 x 10-6/°C. Due to this difference in coefficient of linear expansion, when the temperature is high (usually the temperature at which the epoxy resin is molded and cured), tensile shear force is applied to the silicone pellet, and when the temperature is low, compressive shear force is applied to the silicone pellet. become.
温度変化の回数が多い場合、温度変化が急激な場合シリ
−コンペレットのワレヤ、ろう材の疲労の問題が発生す
る。When the number of temperature changes is large or the temperature change is rapid, problems such as cracking of the silicone pellets and fatigue of the brazing material occur.
本発明の目的は、温度変化によりペレットに加わるせん
断力を緩和し、温度サイクル、熱衝撃等の信頼性を向上
した面付形の半導体装置を提供することにある。An object of the present invention is to provide a surface-mounted semiconductor device that alleviates the shearing force applied to the pellet due to temperature changes and improves reliability against temperature cycles, thermal shock, etc.
上記目的を達成する本発明半導体装置の特徴とするとこ
ろは、シリコーンペレットの両側にろう材で接続される
電極のうち少なくとも片方にＳ字形状の曲折部を設け、
この曲折部とシリコーンペレットをシリコーンペレット
の表面処理材であるシリコーンゴムにより包み込む構造
にした点にある。The semiconductor device of the present invention that achieves the above object is characterized by providing an S-shaped bent portion on at least one of the electrodes connected to both sides of the silicone pellet with a brazing material;
The structure is such that the bent portion and the silicone pellet are wrapped in silicone rubber, which is a surface treatment material for the silicone pellet.
本発明の構造では、電極の銅とモールド材のエポキシ樹
脂の膨張係数の差によって生じるペレットに加わるぜん
断力は次のようにして緩和される。In the structure of the present invention, the shearing force applied to the pellet caused by the difference in expansion coefficient between the copper of the electrode and the epoxy resin of the molding material is alleviated in the following manner.
すなわち、電極の少なくとも片方に設けたＳ字形状の曲
折部は電極に引張り力が加わると伸び、圧縮力が加わる
と縮むことが出来る。この伸縮の作用によりペレット部
に加わるカを大幅に緩和することか出来る。このＳ字形
状の曲折部を持つ電極の場合にシリコーンペレットに加
わる力は、Ｓ字形状の曲折部の変形により発生する力だ
けで、この力は電極とモールド材の線膨張係数により発
生する力に比べ非常に小さくなり、従来構造のような不
都合は生じない。That is, the S-shaped bent portion provided on at least one side of the electrode can expand when a tensile force is applied to the electrode, and can contract when a compressive force is applied to the electrode. This expansion/contraction action can significantly reduce the force applied to the pellet portion. In the case of an electrode with an S-shaped bent part, the only force that is applied to the silicone pellet is the force generated by the deformation of the S-shaped bent part, and this force is generated by the linear expansion coefficient of the electrode and molding material. It is very small compared to , and does not cause the disadvantages of the conventional structure.
一方、このＳ字形状の曲折部をモールド材の中に設置す
ると、モールド材のエポキシ樹脂は容易に変形するもの
ではないから、Ｓ字形状の曲折部の伸縮作用は殆ど期待
出来ない。そこで、Ｓ字形状の曲折部を柔いシリコーン
ゴムで包む構造とすめ
ると、伸縮作用を防げることがなくなる。シリコーンゴ
ムはシリコーンペレットの表面処理剤であるから、Ｓ字
形状の曲折部はペレットと隣接するような位置に設ける
ことが望ましい。さらに、帯状電極の曲折部によりペレ
ットと電極端部間の熱抵抗を調整する事が可能である。On the other hand, when this S-shaped bent part is installed in a mold material, the epoxy resin of the mold material does not easily deform, so the expansion and contraction effect of the S-shaped bent part can hardly be expected. Therefore, if the S-shaped bent portion is wrapped in soft silicone rubber, the expansion and contraction effect cannot be prevented. Since silicone rubber is a surface treatment agent for silicone pellets, it is desirable that the S-shaped bent portion be provided at a position adjacent to the pellets. Furthermore, it is possible to adjust the thermal resistance between the pellet and the end of the electrode by the bent portion of the strip electrode.
特に面実装による半田付けの場合、半導体装置をプリン
１〜基板に接続する際の熱が帯状電極を通して、ペレッ
トと帯状電極を接着した半田層に影響し、再び溶融する
事の無い様、ペレットと帯状電極端部は規定の熱抵抗を
確保する必要がある。Particularly in the case of surface-mount soldering, the heat generated when connecting the semiconductor device to the printed circuit board 1 passes through the strip electrode and affects the solder layer that adheres the pellet and strip electrode, and the pellet and strip electrode are bonded together to prevent them from melting again. The end of the strip electrode must have a specified thermal resistance.
そのための第１の具体的構成は、ペレットの両面に接着
される電極のペレット側から端部に至る熱抵抗をほぼ等
しくするものである。この構成は、ペレットの両面での
使用半田層の融点が等しくプリント基板実装時の熱によ
り半田層が溶融しないようにするに適している。第２の
具体的構成は、ペレットの両面に接着される電極のペレ
ット側から端部に至る熱抵抗を異ならしめるものである
。A first specific configuration for this purpose is to make the thermal resistance of the electrodes bonded to both surfaces of the pellet approximately equal from the pellet side to the end portion. This configuration is suitable for ensuring that the melting points of the solder layers used on both sides of the pellet are equal and that the solder layers do not melt due to heat during mounting on a printed circuit board. The second specific configuration is such that the electrodes bonded to both surfaces of the pellet have different thermal resistances from the pellet side to the end portions.
この構成は、製造プロセス上、ペレットの両面に同一融
点（同一成分）の半田層を使用出来ない場合に適してい
る。ペレットの半田付工程が同時に不可能な製造プロセ
スを採用する場合、一般的には下側の帯状電極にペレッ
トをセットして半田付けをし、しかる後に、融点の低い
第２の半田で、ペレット上側の帯状電極を半田付けする
ことが多い。このような場合には融点の高い半田側の帯
状電極を短くし、ペレットによる発熱を放出する効果を
確保することが出来る。This configuration is suitable when it is not possible to use solder layers with the same melting point (same components) on both sides of the pellet due to the manufacturing process. When using a manufacturing process that does not allow pellet soldering at the same time, generally the pellet is set on the lower strip-shaped electrode and soldered, and then a second solder with a lower melting point is used to solder the pellet. The upper strip electrode is often soldered. In such a case, the strip electrode on the side of the solder having a higher melting point can be shortened to ensure the effect of releasing heat generated by the pellet.
以下、本発明の一実施例を第１図により説明する。図に
おいて、１はｐｎ接合を有するシリコーンペレット、２
及び３はシリコーンペレット１の両面に半田層４，５を
介して接着された帯状電極で、シリコーンペレット１の
上面に接着された帯状電極２にはシリコーンゴムツ１−
１の極く近傍にＳ字形状の曲折部２１が形成されている
。An embodiment of the present invention will be described below with reference to FIG. In the figure, 1 is a silicone pellet with a pn junction, 2
and 3 are band-shaped electrodes bonded to both sides of the silicone pellet 1 via solder layers 4 and 5, and the band-shaped electrode 2 bonded to the top surface of the silicone pellet 1 has a silicone rubber band 1-
An S-shaped bent portion 21 is formed very close to 1.
６はシリコーンペレット１．半田層４，５及び帯状電極
２のＳ字形状の曲折部２１を包囲するシリコーンゴム、
７はシリコーンゴム６を包囲された部分は勿論帯状電極
２，３の端部を残して被覆するモールド材である。モー
ルド材７はほぼ直方体形状を有し、帯状電極２，３は直
方体の一対の対面からモールド材７の外部に引き出され
、外面に沿って折り曲げられ、両方の端部がモールド材
７の底面に位置するようにされている。モールド材７と
してはエポキシ樹脂を用いた。6 is silicone pellet 1. silicone rubber surrounding the solder layers 4 and 5 and the S-shaped bent portion 21 of the strip electrode 2;
Reference numeral 7 denotes a molding material that covers the silicone rubber 6 except for the surrounding portions as well as the ends of the strip electrodes 2 and 3. The mold material 7 has a substantially rectangular parallelepiped shape, and the strip electrodes 2 and 3 are drawn out from the mold material 7 from a pair of opposing faces of the rectangular parallelepiped, are bent along the outer surface, and both ends are attached to the bottom surface of the mold material 7. Being located. As the molding material 7, epoxy resin was used.
本実施例では、温度変化によりシリコーンペレット１に
加わる力は、帯状電極２のＳ字形状の曲折部２１が伸び
縮みすることにより緩和される。In this embodiment, the force applied to the silicone pellet 1 due to temperature changes is alleviated by the expansion and contraction of the S-shaped bent portion 21 of the strip electrode 2.
又シリコーンゴム６はＳ字形状の曲折部２１を包むよう
に塗布されているので、Ｓ字形状の曲折部
部の伸縮作用は何ら防げられることなく効果を発揮出来
る。Furthermore, since the silicone rubber 6 is applied so as to surround the S-shaped bent portion 21, the expansion and contraction action of the S-shaped bent portion is not prevented in any way and the effect can be exhibited.
以上により、温度サイクル、熱衝撃等による、シリコー
ンペレット１の割れや、半田層４，５の熱疲労を防止出
来、信頼性を向上することが出来る。As described above, cracking of the silicone pellet 1 and thermal fatigue of the solder layers 4 and 5 due to temperature cycling, thermal shock, etc. can be prevented, and reliability can be improved.
本発明はこの実施例に限定されることなく本発明の技術
思想の範囲内で種々の変形が可能である。The present invention is not limited to this embodiment, and various modifications can be made within the scope of the technical idea of the present invention.
例えば、一対の帯状電極の双方にＳ字形状の曲折部を形
成した構造、同一融点の半田層で一対の帯状電極をシリ
コーンペレットに接着し、一対の帯状電極のシリコーン
ペレット側からモールド材外の端部までの熱抵抗をほぼ
等しくした構造、融点の異なる半田層で一対の帯状電極
をシリコーンペレットに接着し、融点の高い半田層で接
着された帯状電極のシリコーンペレット側からモールド
材外の端部までの熱抵抗を他の帯状電極のそれより小さ
くした構造が考えられる。For example, a pair of strip-shaped electrodes may have an S-shaped bent portion on both sides, and a pair of strip-shaped electrodes may be bonded to a silicone pellet with a solder layer having the same melting point, and the electrodes may be bonded to the outside of the mold material from the silicone pellet side of the pair of strip-shaped electrodes. A structure with almost equal thermal resistance up to the ends, a pair of strip electrodes are bonded to silicone pellets using solder layers with different melting points, and the strip electrodes are bonded with a solder layer with a high melting point from the silicone pellet side to the edge outside the mold material. A structure with a thermal resistance smaller than that of other strip electrodes is conceivable.
本発明によれば、帯状電極モールド材の熱膨張係数の差
が原因で生ずる温度変化によるシリコーンペレットのせ
ん断応力を小さくすることが可能となり、温度サイクル
、熱衝撃によるシリコーンペレットの割れ、半田層の熱
疲労を防止することが可能で、信頼性を向上した面付形
の半導体装置を得ることができる。According to the present invention, it is possible to reduce the shear stress of the silicone pellet due to temperature changes caused by the difference in the thermal expansion coefficient of the strip electrode molding material. A surface-mounted semiconductor device that can prevent thermal fatigue and has improved reliability can be obtained.
第１図は本発明半導体装置の一実施例を示す断面図及び
側面図、第２図は従来のアキシャルリード形レジンダイ
オードの断面図及び側面図、第３図は面付形ダイオード
の従来の構造を示す断面図及び側面図である。
１・・・シリコーンペレット、２，３・・・帯状電極、
４゜５・・・半田層、６・・・シリコーンゴム、７・・
モールド嶌１図
も７区
筋３凶FIG. 1 is a sectional view and side view showing an embodiment of the semiconductor device of the present invention, FIG. 2 is a sectional view and side view of a conventional axial lead type resin diode, and FIG. 3 is a conventional structure of a surface-mounted diode. FIG. 1... Silicone pellet, 2, 3... Band-shaped electrode,
4゜5...Solder layer, 6...Silicone rubber, 7...
Mold Island 1 map also has 7 kusuji 3 kyo
Claims (1)
くとも一方は半導体ペレットに近接する個所にＳ字形状
の曲折部を有する一対の帯状電極と、 半導体ペレット、半田層及び一方の帯状電極のＳ字形状
の曲折部を被覆するシリコーンゴムと、 シリコーンゴム及び帯状電極の端部を除く個所を被覆す
る樹脂モールド材と、を具備することを特徴とする半導
体装置。 ２、特許請求の範囲第１項において、一対の帯状電極の
半導体ペレット側からモールド材外の端部までの熱抵抗
が、ほぼ等しくなる様に折曲部を設けたことを特徴とす
る半導体装置。 ３、特許請求の範囲第１項において、一対の帯状電極の
半導体ペレットからモールド材外の端部までの熱抵抗が
異なるように折曲部を設けたことを特徴とする半導体装
置。 ４、特許請求の範囲第１項において、一対の帯状電極の
それぞれに折曲部を設けたことを特徴とする半導体装置
。[Claims] 1. A semiconductor pellet having a pn junction, and a pair of strips bonded to both sides of the semiconductor pellet via a solder layer, at least one of which has an S-shaped bent portion near the semiconductor pellet. An electrode, silicone rubber that covers the semiconductor pellet, the solder layer, and the S-shaped bent portion of one of the strip electrodes, and a resin molding material that covers the silicone rubber and the portions of the strip electrode other than the ends. A semiconductor device characterized by: 2. A semiconductor device according to claim 1, characterized in that a bent portion is provided so that the thermal resistances of the pair of band-shaped electrodes from the semiconductor pellet side to the end portion outside the molding material are approximately equal. . 3. A semiconductor device according to claim 1, characterized in that a bent portion is provided so that the thermal resistance of the pair of band-shaped electrodes from the semiconductor pellet to the end portion outside the molding material is different. 4. A semiconductor device according to claim 1, characterized in that each of the pair of band-shaped electrodes is provided with a bent portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11466887A JPS63281451A (en) | 1987-05-13 | 1987-05-13 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11466887A JPS63281451A (en) | 1987-05-13 | 1987-05-13 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63281451A true JPS63281451A (en) | 1988-11-17 |
Family
ID=14643606
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11466887A Pending JPS63281451A (en) | 1987-05-13 | 1987-05-13 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63281451A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03105957A (en) * | 1989-09-20 | 1991-05-02 | Hitachi Ltd | Semiconductor integrated circuit device |
| JPH03194954A (en) * | 1989-12-22 | 1991-08-26 | Hitachi Ltd | Semiconductor device and electronic device mounted with the semiconductor device |
| DE10393769B4 (en) * | 2002-11-22 | 2012-09-27 | International Rectifier Corporation | Semiconductor device with terminals for connection to external elements |
-
1987
- 1987-05-13 JP JP11466887A patent/JPS63281451A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03105957A (en) * | 1989-09-20 | 1991-05-02 | Hitachi Ltd | Semiconductor integrated circuit device |
| JPH03194954A (en) * | 1989-12-22 | 1991-08-26 | Hitachi Ltd | Semiconductor device and electronic device mounted with the semiconductor device |
| DE10393769B4 (en) * | 2002-11-22 | 2012-09-27 | International Rectifier Corporation | Semiconductor device with terminals for connection to external elements |
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